DE1211339B - Steuerbares Halbleiterbauelement mit vier Zonen - Google Patents

Steuerbares Halbleiterbauelement mit vier Zonen

Info

Publication number
DE1211339B
DE1211339B DEW32884A DEW0032884A DE1211339B DE 1211339 B DE1211339 B DE 1211339B DE W32884 A DEW32884 A DE W32884A DE W0032884 A DEW0032884 A DE W0032884A DE 1211339 B DE1211339 B DE 1211339B
Authority
DE
Germany
Prior art keywords
zone
current
emitter
semiconductor component
zones
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DEW32884A
Other languages
German (de)
English (en)
Inventor
Thorndike C T
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Westinghouse Electric Corp
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Publication of DE1211339B publication Critical patent/DE1211339B/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/60—Gate-turn-off devices 

Landscapes

  • Thyristors (AREA)
  • Bipolar Transistors (AREA)
DEW32884A 1961-10-06 1962-09-01 Steuerbares Halbleiterbauelement mit vier Zonen Pending DE1211339B (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US143354A US3210563A (en) 1961-10-06 1961-10-06 Four-layer semiconductor switch with particular configuration exhibiting relatively high turn-off gain

Publications (1)

Publication Number Publication Date
DE1211339B true DE1211339B (de) 1966-02-24

Family

ID=22503701

Family Applications (1)

Application Number Title Priority Date Filing Date
DEW32884A Pending DE1211339B (de) 1961-10-06 1962-09-01 Steuerbares Halbleiterbauelement mit vier Zonen

Country Status (5)

Country Link
US (1) US3210563A (en, 2012)
BE (1) BE623187A (en, 2012)
CH (1) CH394402A (en, 2012)
DE (1) DE1211339B (en, 2012)
GB (1) GB983266A (en, 2012)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL290680A (en, 2012) * 1962-06-19
US3271587A (en) * 1962-11-13 1966-09-06 Texas Instruments Inc Four-terminal semiconductor switch circuit
DE1464946A1 (de) * 1963-06-04 1969-02-20 Gen Electric Halbleiterschalter
US3331000A (en) * 1963-10-18 1967-07-11 Gen Electric Gate turn off semiconductor switch having a composite gate region with different impurity concentrations
US3356862A (en) * 1964-12-02 1967-12-05 Int Rectifier Corp High speed controlled rectifier
US3465214A (en) * 1967-03-23 1969-09-02 Mallory & Co Inc P R High-current integrated-circuit power transistor
US3577042A (en) * 1967-06-19 1971-05-04 Int Rectifier Corp Gate connection for controlled rectifiers
SE318654B (en, 2012) * 1967-06-30 1969-12-15 Asea Ab
US3628106A (en) * 1969-05-05 1971-12-14 Gen Electric Passivated semiconductor device with protective peripheral junction portion
US4364073A (en) * 1980-03-25 1982-12-14 Rca Corporation Power MOSFET with an anode region
US5262336A (en) * 1986-03-21 1993-11-16 Advanced Power Technology, Inc. IGBT process to produce platinum lifetime control

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1107710B (de) * 1959-11-18 1961-05-31 Siemens Ag Schaltanordnung mit einer Vierschicht-halbleiteranordnung
US2993154A (en) * 1960-06-10 1961-07-18 Bell Telephone Labor Inc Semiconductor switch
FR1267417A (fr) * 1959-09-08 1961-07-21 Thomson Houston Comp Francaise Dispositif à semi-conducteur et méthode de fabrication

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2877359A (en) * 1956-04-20 1959-03-10 Bell Telephone Labor Inc Semiconductor signal storage device
US2998534A (en) * 1958-09-04 1961-08-29 Clevite Corp Symmetrical junction transistor device and circuit
US2980832A (en) * 1959-06-10 1961-04-18 Westinghouse Electric Corp High current npnp switch
US3040270A (en) * 1959-09-01 1962-06-19 Gen Electric Silicon controlled rectifier circuit including a variable frequency oscillator
DE1103389B (de) * 1959-10-14 1961-03-30 Siemens Ag Schaltanordnung mit einer Vierschichthalbleiteranordnung

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1267417A (fr) * 1959-09-08 1961-07-21 Thomson Houston Comp Francaise Dispositif à semi-conducteur et méthode de fabrication
DE1107710B (de) * 1959-11-18 1961-05-31 Siemens Ag Schaltanordnung mit einer Vierschicht-halbleiteranordnung
US2993154A (en) * 1960-06-10 1961-07-18 Bell Telephone Labor Inc Semiconductor switch

Also Published As

Publication number Publication date
GB983266A (en) 1965-02-17
CH394402A (de) 1965-06-30
US3210563A (en) 1965-10-05
BE623187A (en, 2012)

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