DE1185294C2 - Schaltungsanordnung mit unipolartransistoren auf einer einkristallinen halbleiterplatte - Google Patents
Schaltungsanordnung mit unipolartransistoren auf einer einkristallinen halbleiterplatteInfo
- Publication number
- DE1185294C2 DE1185294C2 DE19611185294 DE1185294A DE1185294C2 DE 1185294 C2 DE1185294 C2 DE 1185294C2 DE 19611185294 DE19611185294 DE 19611185294 DE 1185294 A DE1185294 A DE 1185294A DE 1185294 C2 DE1185294 C2 DE 1185294C2
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor plate
- layer
- control
- thinner layer
- zones
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title claims description 30
- 230000003334 potential effect Effects 0.000 claims 1
- 239000004020 conductor Substances 0.000 description 8
- 238000010586 diagram Methods 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G04—HOROLOGY
- G04G—ELECTRONIC TIME-PIECES
- G04G99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/87—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of PN-junction gate FETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Integrated Circuits (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Junction Field-Effect Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CH366260A CH372105A (fr) | 1960-04-01 | 1960-04-01 | Dispositif électronique constituant un circuit intégré |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE1185294B DE1185294B (de) | 1974-02-14 |
| DE1185294C2 true DE1185294C2 (de) | 1974-02-14 |
Family
ID=4260812
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19611185294 Expired DE1185294C2 (de) | 1960-04-01 | 1961-03-29 | Schaltungsanordnung mit unipolartransistoren auf einer einkristallinen halbleiterplatte |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US3137796A (h) |
| BE (1) | BE602108A (h) |
| CH (1) | CH372105A (h) |
| DE (1) | DE1185294C2 (h) |
| GB (1) | GB948011A (h) |
| NL (2) | NL262767A (h) |
| SE (1) | SE304334B (h) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1514818A1 (de) * | 1951-01-28 | 1969-05-08 | Telefunken Patent | Festkoerperschaltung,bestehend aus einem Halbleiterkoerper mit eingebrachten aktiven Bauelementen und einer Isolierschicht mit aufgebrachten passiven Bauelementen und Leitungsbahnen |
| GB1054514A (h) * | 1963-04-05 | 1900-01-01 | ||
| GB1050417A (h) * | 1963-07-09 | |||
| US3363152A (en) * | 1964-01-24 | 1968-01-09 | Westinghouse Electric Corp | Semiconductor devices with low leakage current across junction |
| US3266127A (en) * | 1964-01-27 | 1966-08-16 | Ibm | Method of forming contacts on semiconductors |
| US3383569A (en) * | 1964-03-26 | 1968-05-14 | Suisse Horlogerie | Transistor-capacitor integrated circuit structure |
| US3489953A (en) * | 1964-09-18 | 1970-01-13 | Texas Instruments Inc | Stabilized integrated circuit and process for fabricating same |
| GB1095413A (h) * | 1964-12-24 | |||
| JPS4982257A (h) * | 1972-12-12 | 1974-08-08 | ||
| GB2174540B (en) * | 1985-05-02 | 1989-02-15 | Texas Instruments Ltd | Intergrated circuits |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR1163241A (fr) * | 1957-11-30 | 1958-09-23 | Forges Et Ateliers De Constructions Electriques De Jeumont | Dispositif à semi-conducteur dit transistron unipolaire de puissance |
| FR1210880A (fr) * | 1958-08-29 | 1960-03-11 | Perfectionnements aux transistors à effet de champ |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2922898A (en) * | 1956-03-27 | 1960-01-26 | Sylvania Electric Prod | Electronic counter |
| NL233303A (h) * | 1957-11-30 | |||
| US3010033A (en) * | 1958-01-02 | 1961-11-21 | Clevite Corp | Field effect transistor |
| US3070762A (en) * | 1960-05-02 | 1962-12-25 | Texas Instruments Inc | Voltage tuned resistance-capacitance filter, consisting of integrated semiconductor elements usable in phase shift oscillator |
-
0
- NL NL123575D patent/NL123575C/xx active
- NL NL262767D patent/NL262767A/xx unknown
-
1960
- 1960-04-01 CH CH366260A patent/CH372105A/fr unknown
-
1961
- 1961-03-24 GB GB10781/61A patent/GB948011A/en not_active Expired
- 1961-03-29 SE SE3390/61A patent/SE304334B/xx unknown
- 1961-03-29 DE DE19611185294 patent/DE1185294C2/de not_active Expired
- 1961-03-31 BE BE602108A patent/BE602108A/fr unknown
- 1961-03-31 US US99879A patent/US3137796A/en not_active Expired - Lifetime
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR1163241A (fr) * | 1957-11-30 | 1958-09-23 | Forges Et Ateliers De Constructions Electriques De Jeumont | Dispositif à semi-conducteur dit transistron unipolaire de puissance |
| FR1210880A (fr) * | 1958-08-29 | 1960-03-11 | Perfectionnements aux transistors à effet de champ |
Also Published As
| Publication number | Publication date |
|---|---|
| SE304334B (h) | 1968-09-23 |
| CH372105A (fr) | 1963-09-30 |
| NL123575C (h) | |
| GB948011A (en) | 1964-01-29 |
| US3137796A (en) | 1964-06-16 |
| BE602108A (fr) | 1961-10-02 |
| NL262767A (h) | |
| DE1185294B (de) | 1974-02-14 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| E77 | Valid patent as to the heymanns-index 1977 | ||
| EHJ | Ceased/non-payment of the annual fee |