DE1163979B - Verfahren zum Herstellen eines flachen UEbergangs zwischen Zonen unterschiedlichen Leitungstyps - Google Patents
Verfahren zum Herstellen eines flachen UEbergangs zwischen Zonen unterschiedlichen LeitungstypsInfo
- Publication number
- DE1163979B DE1163979B DES64325A DES0064325A DE1163979B DE 1163979 B DE1163979 B DE 1163979B DE S64325 A DES64325 A DE S64325A DE S0064325 A DES0064325 A DE S0064325A DE 1163979 B DE1163979 B DE 1163979B
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor body
- doping metal
- alloy
- semiconductor
- alloyed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000007704 transition Effects 0.000 title claims description 18
- 238000004519 manufacturing process Methods 0.000 title claims description 4
- 239000004065 semiconductor Substances 0.000 claims description 37
- 229910052751 metal Inorganic materials 0.000 claims description 20
- 239000002184 metal Substances 0.000 claims description 20
- 229910045601 alloy Inorganic materials 0.000 claims description 18
- 239000000956 alloy Substances 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 15
- 238000005496 tempering Methods 0.000 claims description 10
- 239000012535 impurity Substances 0.000 claims description 9
- 238000009792 diffusion process Methods 0.000 claims description 8
- 229910052738 indium Inorganic materials 0.000 claims description 8
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 8
- 238000005275 alloying Methods 0.000 claims description 7
- 230000007774 longterm Effects 0.000 claims description 2
- 229910001092 metal group alloy Inorganic materials 0.000 claims description 2
- 230000007547 defect Effects 0.000 claims 2
- RBFDCQDDCJFGIK-UHFFFAOYSA-N arsenic germanium Chemical compound [Ge].[As] RBFDCQDDCJFGIK-UHFFFAOYSA-N 0.000 claims 1
- 230000005923 long-lasting effect Effects 0.000 claims 1
- 239000000463 material Substances 0.000 description 6
- 239000012071 phase Substances 0.000 description 6
- 229910052785 arsenic Inorganic materials 0.000 description 4
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 4
- 229910052732 germanium Inorganic materials 0.000 description 4
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- 239000012190 activator Substances 0.000 description 3
- 239000006187 pill Substances 0.000 description 3
- 229910002065 alloy metal Inorganic materials 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 239000007791 liquid phase Substances 0.000 description 2
- 229910000927 Ge alloy Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000006735 deficit Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- SAZXSKLZZOUTCH-UHFFFAOYSA-N germanium indium Chemical compound [Ge].[In] SAZXSKLZZOUTCH-UHFFFAOYSA-N 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/228—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a liquid phase, e.g. alloy diffusion processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/167—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table further characterised by the doping material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Thyristors (AREA)
- Bipolar Transistors (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL254545D NL254545A (xx) | 1959-08-06 | ||
| DES64325A DE1163979B (de) | 1959-08-06 | 1959-08-06 | Verfahren zum Herstellen eines flachen UEbergangs zwischen Zonen unterschiedlichen Leitungstyps |
| FR834441A FR1266079A (fr) | 1959-08-06 | 1960-07-29 | Procédé pour la préparation d'une jonction entre des zones de conductibilités différentes |
| CH875860A CH393541A (de) | 1959-08-06 | 1960-08-02 | Verfahren zum Herstellen eines Übergangs zwischen Zonen unterschiedlicher Leitfähigkeit |
| GB2720360A GB950467A (en) | 1959-08-06 | 1960-08-05 | Improvements in or relating to the production of semi-conductor devices |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES64325A DE1163979B (de) | 1959-08-06 | 1959-08-06 | Verfahren zum Herstellen eines flachen UEbergangs zwischen Zonen unterschiedlichen Leitungstyps |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE1163979B true DE1163979B (de) | 1964-02-27 |
Family
ID=7497098
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DES64325A Pending DE1163979B (de) | 1959-08-06 | 1959-08-06 | Verfahren zum Herstellen eines flachen UEbergangs zwischen Zonen unterschiedlichen Leitungstyps |
Country Status (4)
| Country | Link |
|---|---|
| CH (1) | CH393541A (xx) |
| DE (1) | DE1163979B (xx) |
| GB (1) | GB950467A (xx) |
| NL (1) | NL254545A (xx) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1000115B (de) * | 1954-03-03 | 1957-01-03 | Standard Elektrik Ag | Verfahren zur Herstellung von Halbleiterschichtkristallen mit PN-UEbergang |
| DE1012696B (de) * | 1954-07-06 | 1957-07-25 | Siemens Ag | Halbleiteruebergang zwischen Zonen verschiedenen Leitungstypus und Verfahren zur Herstellung des UEberganges |
-
0
- NL NL254545D patent/NL254545A/xx unknown
-
1959
- 1959-08-06 DE DES64325A patent/DE1163979B/de active Pending
-
1960
- 1960-08-02 CH CH875860A patent/CH393541A/de unknown
- 1960-08-05 GB GB2720360A patent/GB950467A/en not_active Expired
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1000115B (de) * | 1954-03-03 | 1957-01-03 | Standard Elektrik Ag | Verfahren zur Herstellung von Halbleiterschichtkristallen mit PN-UEbergang |
| DE1012696B (de) * | 1954-07-06 | 1957-07-25 | Siemens Ag | Halbleiteruebergang zwischen Zonen verschiedenen Leitungstypus und Verfahren zur Herstellung des UEberganges |
Also Published As
| Publication number | Publication date |
|---|---|
| CH393541A (de) | 1965-06-15 |
| GB950467A (en) | 1964-02-26 |
| NL254545A (xx) |
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