DE1163979B - Verfahren zum Herstellen eines flachen UEbergangs zwischen Zonen unterschiedlichen Leitungstyps - Google Patents
Verfahren zum Herstellen eines flachen UEbergangs zwischen Zonen unterschiedlichen LeitungstypsInfo
- Publication number
- DE1163979B DE1163979B DES64325A DES0064325A DE1163979B DE 1163979 B DE1163979 B DE 1163979B DE S64325 A DES64325 A DE S64325A DE S0064325 A DES0064325 A DE S0064325A DE 1163979 B DE1163979 B DE 1163979B
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor body
- doping metal
- alloy
- semiconductor
- alloyed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000007704 transition Effects 0.000 title claims description 18
- 238000004519 manufacturing process Methods 0.000 title claims description 4
- 239000004065 semiconductor Substances 0.000 claims description 37
- 229910052751 metal Inorganic materials 0.000 claims description 20
- 239000002184 metal Substances 0.000 claims description 20
- 229910045601 alloy Inorganic materials 0.000 claims description 18
- 239000000956 alloy Substances 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 15
- 238000005496 tempering Methods 0.000 claims description 10
- 239000012535 impurity Substances 0.000 claims description 9
- 238000009792 diffusion process Methods 0.000 claims description 8
- 229910052738 indium Inorganic materials 0.000 claims description 8
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 8
- 238000005275 alloying Methods 0.000 claims description 7
- 230000007774 longterm Effects 0.000 claims description 2
- 229910001092 metal group alloy Inorganic materials 0.000 claims description 2
- 230000007547 defect Effects 0.000 claims 2
- RBFDCQDDCJFGIK-UHFFFAOYSA-N arsenic germanium Chemical compound [Ge].[As] RBFDCQDDCJFGIK-UHFFFAOYSA-N 0.000 claims 1
- 230000005923 long-lasting effect Effects 0.000 claims 1
- 239000000463 material Substances 0.000 description 6
- 239000012071 phase Substances 0.000 description 6
- 229910052785 arsenic Inorganic materials 0.000 description 4
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 4
- 229910052732 germanium Inorganic materials 0.000 description 4
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- 239000012190 activator Substances 0.000 description 3
- 239000006187 pill Substances 0.000 description 3
- 229910002065 alloy metal Inorganic materials 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 239000007791 liquid phase Substances 0.000 description 2
- 229910000927 Ge alloy Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000006735 deficit Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- SAZXSKLZZOUTCH-UHFFFAOYSA-N germanium indium Chemical compound [Ge].[In] SAZXSKLZZOUTCH-UHFFFAOYSA-N 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/60—Impurity distributions or concentrations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/228—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a liquid phase, e.g. alloy diffusion processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
- H10D62/834—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge further characterised by the dopants
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Thyristors (AREA)
- Bipolar Transistors (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL254545D NL254545A (en:Method) | 1959-08-06 | ||
| DES64325A DE1163979B (de) | 1959-08-06 | 1959-08-06 | Verfahren zum Herstellen eines flachen UEbergangs zwischen Zonen unterschiedlichen Leitungstyps |
| FR834441A FR1266079A (fr) | 1959-08-06 | 1960-07-29 | Procédé pour la préparation d'une jonction entre des zones de conductibilités différentes |
| CH875860A CH393541A (de) | 1959-08-06 | 1960-08-02 | Verfahren zum Herstellen eines Übergangs zwischen Zonen unterschiedlicher Leitfähigkeit |
| GB27203/60A GB950467A (en) | 1959-08-06 | 1960-08-05 | Improvements in or relating to the production of semi-conductor devices |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES64325A DE1163979B (de) | 1959-08-06 | 1959-08-06 | Verfahren zum Herstellen eines flachen UEbergangs zwischen Zonen unterschiedlichen Leitungstyps |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE1163979B true DE1163979B (de) | 1964-02-27 |
Family
ID=7497098
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DES64325A Pending DE1163979B (de) | 1959-08-06 | 1959-08-06 | Verfahren zum Herstellen eines flachen UEbergangs zwischen Zonen unterschiedlichen Leitungstyps |
Country Status (4)
| Country | Link |
|---|---|
| CH (1) | CH393541A (en:Method) |
| DE (1) | DE1163979B (en:Method) |
| GB (1) | GB950467A (en:Method) |
| NL (1) | NL254545A (en:Method) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1000115B (de) * | 1954-03-03 | 1957-01-03 | Standard Elektrik Ag | Verfahren zur Herstellung von Halbleiterschichtkristallen mit PN-UEbergang |
| DE1012696B (de) * | 1954-07-06 | 1957-07-25 | Siemens Ag | Halbleiteruebergang zwischen Zonen verschiedenen Leitungstypus und Verfahren zur Herstellung des UEberganges |
-
0
- NL NL254545D patent/NL254545A/xx unknown
-
1959
- 1959-08-06 DE DES64325A patent/DE1163979B/de active Pending
-
1960
- 1960-08-02 CH CH875860A patent/CH393541A/de unknown
- 1960-08-05 GB GB27203/60A patent/GB950467A/en not_active Expired
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1000115B (de) * | 1954-03-03 | 1957-01-03 | Standard Elektrik Ag | Verfahren zur Herstellung von Halbleiterschichtkristallen mit PN-UEbergang |
| DE1012696B (de) * | 1954-07-06 | 1957-07-25 | Siemens Ag | Halbleiteruebergang zwischen Zonen verschiedenen Leitungstypus und Verfahren zur Herstellung des UEberganges |
Also Published As
| Publication number | Publication date |
|---|---|
| GB950467A (en) | 1964-02-26 |
| NL254545A (en:Method) | |
| CH393541A (de) | 1965-06-15 |
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