DE1123402B - Halbleiterdiode mit mehreren PN-UEbergaengen - Google Patents

Halbleiterdiode mit mehreren PN-UEbergaengen

Info

Publication number
DE1123402B
DE1123402B DEI17361A DEI0017361A DE1123402B DE 1123402 B DE1123402 B DE 1123402B DE I17361 A DEI17361 A DE I17361A DE I0017361 A DEI0017361 A DE I0017361A DE 1123402 B DE1123402 B DE 1123402B
Authority
DE
Germany
Prior art keywords
semiconductor
zone
zones
electrode
junction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DEI17361A
Other languages
German (de)
English (en)
Inventor
Richard Frederick Rutz
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of DE1123402B publication Critical patent/DE1123402B/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/35—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar semiconductor devices with more than two PN junctions, or more than three electrodes, or more than one electrode connected to the same conductivity region
    • H03K3/352—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar semiconductor devices with more than two PN junctions, or more than three electrodes, or more than one electrode connected to the same conductivity region the devices being thyristors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/313—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of semiconductor devices with two electrodes, one or two potential barriers, and exhibiting a negative resistance characteristic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Thyristors (AREA)
DEI17361A 1958-12-15 1959-12-12 Halbleiterdiode mit mehreren PN-UEbergaengen Pending DE1123402B (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US780300A US3083302A (en) 1958-12-15 1958-12-15 Negative resistance semiconductor device

Publications (1)

Publication Number Publication Date
DE1123402B true DE1123402B (de) 1962-02-08

Family

ID=25119208

Family Applications (1)

Application Number Title Priority Date Filing Date
DEI17361A Pending DE1123402B (de) 1958-12-15 1959-12-12 Halbleiterdiode mit mehreren PN-UEbergaengen

Country Status (5)

Country Link
US (1) US3083302A (en, 2012)
DE (1) DE1123402B (en, 2012)
FR (1) FR1244613A (en, 2012)
GB (1) GB948440A (en, 2012)
NL (1) NL246349A (en, 2012)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1213925B (de) * 1963-02-26 1966-04-07 Siemens Ag Halbleiterbauelement mit teilweise negativer Stromspannungscharakteristik und einem Halbleiterkoerper mit vier Zonen sowie Verfahren zum Herstellen
US5841197A (en) * 1994-11-18 1998-11-24 Adamic, Jr.; Fred W. Inverted dielectric isolation process
US6124179A (en) * 1996-09-05 2000-09-26 Adamic, Jr.; Fred W. Inverted dielectric isolation process

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3189800A (en) * 1959-12-14 1965-06-15 Westinghouse Electric Corp Multi-region two-terminal semiconductor device
US3231793A (en) * 1960-10-19 1966-01-25 Merck & Co Inc High voltage rectifier
NL272752A (en, 2012) * 1960-12-20
US3153731A (en) * 1962-02-26 1964-10-20 Merck & Co Inc Semiconductor solid circuit including at least two transistors and zener diodes formed therein
US3335337A (en) * 1962-03-31 1967-08-08 Auritsu Electronic Works Ltd Negative resistance semiconductor devices
DE1464946A1 (de) * 1963-06-04 1969-02-20 Gen Electric Halbleiterschalter
NL296392A (en, 2012) * 1963-08-07

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE548746A (en, 2012) *
BE548745A (en, 2012) *
DE1021891B (de) * 1955-11-22 1958-01-02 Western Electric Co Halbleiterdiode fuer Schaltstromkreise

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2875505A (en) * 1952-12-11 1959-03-03 Bell Telephone Labor Inc Semiconductor translating device
US2838617A (en) * 1953-01-13 1958-06-10 Philips Corp Circuit-arrangement comprising a four-zone transistor
BE525823A (en, 2012) * 1953-01-21
US2811653A (en) * 1953-05-22 1957-10-29 Rca Corp Semiconductor devices
US2814853A (en) * 1956-06-14 1957-12-03 Power Equipment Company Manufacturing transistors

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE548746A (en, 2012) *
BE548745A (en, 2012) *
DE1021891B (de) * 1955-11-22 1958-01-02 Western Electric Co Halbleiterdiode fuer Schaltstromkreise

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1213925B (de) * 1963-02-26 1966-04-07 Siemens Ag Halbleiterbauelement mit teilweise negativer Stromspannungscharakteristik und einem Halbleiterkoerper mit vier Zonen sowie Verfahren zum Herstellen
US5841197A (en) * 1994-11-18 1998-11-24 Adamic, Jr.; Fred W. Inverted dielectric isolation process
US6124179A (en) * 1996-09-05 2000-09-26 Adamic, Jr.; Fred W. Inverted dielectric isolation process

Also Published As

Publication number Publication date
FR1244613A (fr) 1960-10-28
NL246349A (en, 2012)
GB948440A (en) 1964-02-05
US3083302A (en) 1963-03-26

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