DE112024002456T5 - Siliziumkarbidsubstrat, Siliziumkarbid-Halbleiterelement und Verfahren zur Herstellung eines Siliziumkarbidsubstrats - Google Patents

Siliziumkarbidsubstrat, Siliziumkarbid-Halbleiterelement und Verfahren zur Herstellung eines Siliziumkarbidsubstrats

Info

Publication number
DE112024002456T5
DE112024002456T5 DE112024002456.4T DE112024002456T DE112024002456T5 DE 112024002456 T5 DE112024002456 T5 DE 112024002456T5 DE 112024002456 T DE112024002456 T DE 112024002456T DE 112024002456 T5 DE112024002456 T5 DE 112024002456T5
Authority
DE
Germany
Prior art keywords
silicon carbide
region
impurity concentration
substrate
crystal substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE112024002456.4T
Other languages
German (de)
English (en)
Inventor
Kosuke Uchida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsumi Electric Co Ltd Tama-Shi Jp
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Publication of DE112024002456T5 publication Critical patent/DE112024002456T5/de
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/01Manufacture or treatment
    • H10D30/021Manufacture or treatment of FETs having insulated gates [IGFET]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/60Insulated-gate field-effect transistors [IGFET]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00Ion implantation into wafers, substrates or parts of devices
    • H10P30/20Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P36/00Gettering within semiconductor bodies
DE112024002456.4T 2023-06-08 2024-04-16 Siliziumkarbidsubstrat, Siliziumkarbid-Halbleiterelement und Verfahren zur Herstellung eines Siliziumkarbidsubstrats Pending DE112024002456T5 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2023-094793 2023-06-08
JP2023094793 2023-06-08
PCT/JP2024/015148 WO2024252795A1 (ja) 2023-06-08 2024-04-16 炭化珪素基板、炭化珪素半導体装置および炭化珪素基板の製造方法

Publications (1)

Publication Number Publication Date
DE112024002456T5 true DE112024002456T5 (de) 2026-03-26

Family

ID=93795382

Family Applications (1)

Application Number Title Priority Date Filing Date
DE112024002456.4T Pending DE112024002456T5 (de) 2023-06-08 2024-04-16 Siliziumkarbidsubstrat, Siliziumkarbid-Halbleiterelement und Verfahren zur Herstellung eines Siliziumkarbidsubstrats

Country Status (4)

Country Link
JP (1) JPWO2024252795A1 (https=)
CN (1) CN121014273A (https=)
DE (1) DE112024002456T5 (https=)
WO (1) WO2024252795A1 (https=)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017094764A1 (ja) 2015-12-02 2017-06-08 三菱電機株式会社 炭化珪素エピタキシャル基板および炭化珪素半導体装置
JP2023094793A (ja) 2021-12-24 2023-07-06 帝人ファーマ株式会社 睡眠時無呼吸症候群の診断を補助する方法、睡眠時無呼吸症候群の診断を補助するための装置、及び睡眠時無呼吸症候群の診断を補助するためのキット

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110301034B (zh) * 2017-02-20 2023-07-11 株式会社博迈立铖 碳化硅层叠基板及其制造方法
US20200273970A1 (en) * 2017-05-10 2020-08-27 Mitsubishi Electric Corporation Semiconductor device
JP7046026B2 (ja) * 2019-03-01 2022-04-01 三菱電機株式会社 SiCエピタキシャルウエハ、半導体装置、電力変換装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017094764A1 (ja) 2015-12-02 2017-06-08 三菱電機株式会社 炭化珪素エピタキシャル基板および炭化珪素半導体装置
JP2023094793A (ja) 2021-12-24 2023-07-06 帝人ファーマ株式会社 睡眠時無呼吸症候群の診断を補助する方法、睡眠時無呼吸症候群の診断を補助するための装置、及び睡眠時無呼吸症候群の診断を補助するためのキット

Also Published As

Publication number Publication date
WO2024252795A1 (ja) 2024-12-12
CN121014273A (zh) 2025-11-25
JPWO2024252795A1 (https=) 2024-12-12

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Legal Events

Date Code Title Description
R081 Change of applicant/patentee

Owner name: MITSUMI ELECTRIC CO., LTD., TAMA-SHI, JP

Free format text: FORMER OWNER: SUMITOMO ELECTRIC INDUSTRIES, LTD., OSAKA, JP