CN121014273A - 碳化硅衬底、碳化硅半导体装置及碳化硅衬底的制造方法 - Google Patents
碳化硅衬底、碳化硅半导体装置及碳化硅衬底的制造方法Info
- Publication number
- CN121014273A CN121014273A CN202480025712.0A CN202480025712A CN121014273A CN 121014273 A CN121014273 A CN 121014273A CN 202480025712 A CN202480025712 A CN 202480025712A CN 121014273 A CN121014273 A CN 121014273A
- Authority
- CN
- China
- Prior art keywords
- silicon carbide
- region
- substrate
- single crystal
- crystal substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P30/00—Ion implantation into wafers, substrates or parts of devices
- H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P36/00—Gettering within semiconductor bodies
Landscapes
- Recrystallisation Techniques (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2023-094793 | 2023-06-08 | ||
| JP2023094793 | 2023-06-08 | ||
| PCT/JP2024/015148 WO2024252795A1 (ja) | 2023-06-08 | 2024-04-16 | 炭化珪素基板、炭化珪素半導体装置および炭化珪素基板の製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN121014273A true CN121014273A (zh) | 2025-11-25 |
Family
ID=93795382
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202480025712.0A Pending CN121014273A (zh) | 2023-06-08 | 2024-04-16 | 碳化硅衬底、碳化硅半导体装置及碳化硅衬底的制造方法 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPWO2024252795A1 (https=) |
| CN (1) | CN121014273A (https=) |
| DE (1) | DE112024002456T5 (https=) |
| WO (1) | WO2024252795A1 (https=) |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108292686B (zh) | 2015-12-02 | 2021-02-12 | 三菱电机株式会社 | 碳化硅外延基板及碳化硅半导体装置 |
| CN110301034B (zh) * | 2017-02-20 | 2023-07-11 | 株式会社博迈立铖 | 碳化硅层叠基板及其制造方法 |
| US20200273970A1 (en) * | 2017-05-10 | 2020-08-27 | Mitsubishi Electric Corporation | Semiconductor device |
| JP7046026B2 (ja) * | 2019-03-01 | 2022-04-01 | 三菱電機株式会社 | ＳｉＣエピタキシャルウエハ、半導体装置、電力変換装置 |
| JP2023094793A (ja) | 2021-12-24 | 2023-07-06 | 帝人ファーマ株式会社 | 睡眠時無呼吸症候群の診断を補助する方法、睡眠時無呼吸症候群の診断を補助するための装置、及び睡眠時無呼吸症候群の診断を補助するためのキット |
-
2024
- 2024-04-16 DE DE112024002456.4T patent/DE112024002456T5/de active Pending
- 2024-04-16 CN CN202480025712.0A patent/CN121014273A/zh active Pending
- 2024-04-16 JP JP2025525972A patent/JPWO2024252795A1/ja active Pending
- 2024-04-16 WO PCT/JP2024/015148 patent/WO2024252795A1/ja not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| WO2024252795A1 (ja) | 2024-12-12 |
| DE112024002456T5 (de) | 2026-03-26 |
| JPWO2024252795A1 (https=) | 2024-12-12 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |