DE112023001619T5 - Halbleitervorrichtung, halbleitermodul und herstellungsverfahren - Google Patents

Halbleitervorrichtung, halbleitermodul und herstellungsverfahren Download PDF

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Publication number
DE112023001619T5
DE112023001619T5 DE112023001619.4T DE112023001619T DE112023001619T5 DE 112023001619 T5 DE112023001619 T5 DE 112023001619T5 DE 112023001619 T DE112023001619 T DE 112023001619T DE 112023001619 T5 DE112023001619 T5 DE 112023001619T5
Authority
DE
Germany
Prior art keywords
electrode plate
semiconductor device
main
main electrode
wiring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE112023001619.4T
Other languages
German (de)
English (en)
Inventor
Kohei YAMAUCHI
Eiji Mochizuki
Tatsuo Nishizawa
Hideki Iwata
Yoshitaka Nishimura
Masakazu Gekinozu
Ryoga Kiguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Publication of DE112023001619T5 publication Critical patent/DE112023001619T5/de
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
    • H02M7/42—Conversion of DC power input into AC power output without possibility of reversal
    • H02M7/44—Conversion of DC power input into AC power output without possibility of reversal by static converters
    • H02M7/48—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/25—Arrangements for cooling characterised by their materials
    • H10W40/255—Arrangements for cooling characterised by their materials having a laminate or multilayered structure, e.g. direct bond copper [DBC] ceramic substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/60—Securing means for detachable heating or cooling arrangements, e.g. clamps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/60—Securing means for detachable heating or cooling arrangements, e.g. clamps
    • H10W40/611—Bolts or screws
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
    • H10W70/65—Shapes or dispositions of interconnections
    • H10W70/658—Shapes or dispositions of interconnections for devices provided for in groups H10D8/00 - H10D48/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/131—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed
    • H10W74/134—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed the encapsulations being in grooves in the semiconductor body
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/141—VDMOS having built-in components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/161—IGBT having built-in components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/231—Arrangements for cooling characterised by their places of attachment or cooling paths

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Inverter Devices (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Die Bonding (AREA)
DE112023001619.4T 2022-12-28 2023-12-28 Halbleitervorrichtung, halbleitermodul und herstellungsverfahren Pending DE112023001619T5 (de)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2022211688 2022-12-28
JP2022-211688 2022-12-28
JP2023102768 2023-06-22
JP2023-102768 2023-06-22
PCT/JP2023/047275 WO2024143541A1 (ja) 2022-12-28 2023-12-28 半導体デバイス、半導体モジュール、および製造方法

Publications (1)

Publication Number Publication Date
DE112023001619T5 true DE112023001619T5 (de) 2025-04-03

Family

ID=91717904

Family Applications (1)

Application Number Title Priority Date Filing Date
DE112023001619.4T Pending DE112023001619T5 (de) 2022-12-28 2023-12-28 Halbleitervorrichtung, halbleitermodul und herstellungsverfahren

Country Status (5)

Country Link
US (1) US20250112143A1 (https=)
JP (1) JPWO2024143541A1 (https=)
CN (1) CN119301761A (https=)
DE (1) DE112023001619T5 (https=)
WO (1) WO2024143541A1 (https=)

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5710748U (https=) * 1980-06-18 1982-01-20
JPH0436230Y2 (https=) * 1985-12-19 1992-08-26
JPH1050926A (ja) * 1996-07-31 1998-02-20 Taiyo Yuden Co Ltd ハイブリッドモジュール
JP2001166032A (ja) * 1999-12-06 2001-06-22 Nec Corp 電波放射制御装置及び電波放射制御方法
JP3923258B2 (ja) * 2001-01-17 2007-05-30 松下電器産業株式会社 電力制御系電子回路装置及びその製造方法
JP2006303006A (ja) * 2005-04-18 2006-11-02 Yaskawa Electric Corp パワーモジュール
DE102007036841B4 (de) * 2007-08-06 2018-05-09 Infineon Technologies Ag Halbleiterbauteil mit Halbleiterchip und Verfahren zu dessen Herstellung
JP2009224534A (ja) * 2008-03-17 2009-10-01 Yaskawa Electric Corp パワーモジュール
US7816784B2 (en) * 2008-12-17 2010-10-19 Fairchild Semiconductor Corporation Power quad flat no-lead semiconductor die packages with isolated heat sink for high-voltage, high-power applications, systems using the same, and methods of making the same
CN102460693A (zh) * 2009-06-19 2012-05-16 株式会社安川电机 电力变换装置
WO2014046058A1 (ja) * 2012-09-20 2014-03-27 ローム株式会社 パワーモジュール半導体装置およびインバータ装置、およびパワーモジュール半導体装置の製造方法、および金型
US9012990B2 (en) * 2012-10-17 2015-04-21 International Rectifier Corporation Surface mountable power components
JP5975856B2 (ja) * 2012-11-27 2016-08-23 三菱電機株式会社 電力用半導体装置
US9214416B1 (en) * 2013-06-22 2015-12-15 Courtney Furnival High speed, low loss and high density power semiconductor packages (μMaxPak) with molded surface mount high speed device(s) and multi-chip architectures
US9508625B2 (en) * 2014-04-01 2016-11-29 Infineon Technologies Ag Semiconductor die package with multiple mounting configurations
SG10201504271YA (en) * 2015-05-29 2016-12-29 Delta Electronics Int’L Singapore Pte Ltd Power module
SG10201508520PA (en) * 2015-10-14 2017-05-30 Delta Electronics Int’L Singapore Pte Ltd Power module
CN110546757B (zh) * 2017-04-24 2023-05-19 罗姆股份有限公司 电子元器件和半导体装置
US11075137B2 (en) * 2018-05-02 2021-07-27 Semiconductor Components Industries, Llc High power module package structures
JP7510764B2 (ja) * 2020-01-30 2024-07-04 ローム株式会社 半導体装置及び半導体装置の製造方法
JP2021174847A (ja) * 2020-04-23 2021-11-01 株式会社デンソー 電子機器
CN112864139A (zh) * 2020-12-31 2021-05-28 华进半导体封装先导技术研发中心有限公司 一种功率器件封装结构及其制造方法、电子装置

Also Published As

Publication number Publication date
CN119301761A (zh) 2025-01-10
WO2024143541A1 (ja) 2024-07-04
JPWO2024143541A1 (https=) 2024-07-04
US20250112143A1 (en) 2025-04-03

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