JPWO2024143541A1 - - Google Patents

Info

Publication number
JPWO2024143541A1
JPWO2024143541A1 JP2024567982A JP2024567982A JPWO2024143541A1 JP WO2024143541 A1 JPWO2024143541 A1 JP WO2024143541A1 JP 2024567982 A JP2024567982 A JP 2024567982A JP 2024567982 A JP2024567982 A JP 2024567982A JP WO2024143541 A1 JPWO2024143541 A1 JP WO2024143541A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2024567982A
Other languages
Japanese (ja)
Other versions
JPWO2024143541A5 (https=
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2024143541A1 publication Critical patent/JPWO2024143541A1/ja
Publication of JPWO2024143541A5 publication Critical patent/JPWO2024143541A5/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
    • H02M7/42Conversion of DC power input into AC power output without possibility of reversal
    • H02M7/44Conversion of DC power input into AC power output without possibility of reversal by static converters
    • H02M7/48Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325Silicon carbide
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00Arrangements for thermal protection or thermal control
    • H10W40/20Arrangements for cooling
    • H10W40/25Arrangements for cooling characterised by their materials
    • H10W40/255Arrangements for cooling characterised by their materials having a laminate or multilayered structure, e.g. direct bond copper [DBC] ceramic substrates
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00Arrangements for thermal protection or thermal control
    • H10W40/60Securing means for detachable heating or cooling arrangements, e.g. clamps
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00Arrangements for thermal protection or thermal control
    • H10W40/60Securing means for detachable heating or cooling arrangements, e.g. clamps
    • H10W40/611Bolts or screws
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/62Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
    • H10W70/65Shapes or dispositions of interconnections
    • H10W70/658Shapes or dispositions of interconnections for devices provided for in groups H10D8/00 - H10D48/00
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/10Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/131Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed
    • H10W74/134Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed the encapsulations being in grooves in the semiconductor body
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/40Encapsulations, e.g. protective coatings characterised by their materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411Insulated-gate bipolar transistors [IGBT]
    • H10D12/441Vertical IGBTs
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/60Insulated-gate field-effect transistors [IGFET]
    • H10D30/64Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66Vertical DMOS [VDMOS] FETs
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/141VDMOS having built-in components
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/161IGBT having built-in components
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00Arrangements for thermal protection or thermal control
    • H10W40/20Arrangements for cooling
    • H10W40/231Arrangements for cooling characterised by their places of attachment or cooling paths

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Inverter Devices (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Die Bonding (AREA)
JP2024567982A 2022-12-28 2023-12-28 Pending JPWO2024143541A1 (https=)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2022211688 2022-12-28
JP2023102768 2023-06-22
PCT/JP2023/047275 WO2024143541A1 (ja) 2022-12-28 2023-12-28 半導体デバイス、半導体モジュール、および製造方法

Publications (2)

Publication Number Publication Date
JPWO2024143541A1 true JPWO2024143541A1 (https=) 2024-07-04
JPWO2024143541A5 JPWO2024143541A5 (https=) 2025-02-17

Family

ID=91717904

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2024567982A Pending JPWO2024143541A1 (https=) 2022-12-28 2023-12-28

Country Status (5)

Country Link
US (1) US20250112143A1 (https=)
JP (1) JPWO2024143541A1 (https=)
CN (1) CN119301761A (https=)
DE (1) DE112023001619T5 (https=)
WO (1) WO2024143541A1 (https=)

Citations (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5710748U (https=) * 1980-06-18 1982-01-20
JPS62104592U (https=) * 1985-12-19 1987-07-03
JPH1050926A (ja) * 1996-07-31 1998-02-20 Taiyo Yuden Co Ltd ハイブリッドモジュール
US20010002821A1 (en) * 1999-12-06 2001-06-07 Nec Corporation Apparatus and method for controlling radiation of electric waves
JP2002217363A (ja) * 2001-01-17 2002-08-02 Matsushita Electric Ind Co Ltd 電力制御系電子回路装置及びその製造方法
JP2006303006A (ja) * 2005-04-18 2006-11-02 Yaskawa Electric Corp パワーモジュール
DE102007036841A1 (de) * 2007-08-06 2009-02-12 Infineon Technologies Ag Halbleiterbauteil mit Halbleiterchip und Verfahren zu dessen Herstellung
JP2009224534A (ja) * 2008-03-17 2009-10-01 Yaskawa Electric Corp パワーモジュール
US20100148328A1 (en) * 2008-12-17 2010-06-17 Fairchild Semiconductor Corporation Power quad flat no-lead semiconductor die packages with isolated heat sink for high-voltage, high-power applications, systems using the same, and methods of making the same
WO2010147202A1 (ja) * 2009-06-19 2010-12-23 株式会社安川電機 電力変換装置
JP2014107378A (ja) * 2012-11-27 2014-06-09 Mitsubishi Electric Corp 電力用半導体装置
US20150221588A1 (en) * 2012-10-17 2015-08-06 International Rectifier Corporation Surface Mountable Power Components
US20150279757A1 (en) * 2014-04-01 2015-10-01 Infineon Technologies Ag Semiconductor die package with multiple mounting configurations
US9214416B1 (en) * 2013-06-22 2015-12-15 Courtney Furnival High speed, low loss and high density power semiconductor packages (μMaxPak) with molded surface mount high speed device(s) and multi-chip architectures
US20160352246A1 (en) * 2015-05-29 2016-12-01 Delta Electronics Int'l (Singapore) Pte Ltd Power module
US20170110978A1 (en) * 2015-10-14 2017-04-20 Delta Electronics Int'l (Singapore) Pte Ltd Power module
JP2018160699A (ja) * 2012-09-20 2018-10-11 ローム株式会社 半導体装置
WO2018198990A1 (ja) * 2017-04-24 2018-11-01 ローム株式会社 電子部品および半導体装置
US20190341332A1 (en) * 2018-05-02 2019-11-07 Semiconductor Components Industries, Llc High power module package structures
CN112864139A (zh) * 2020-12-31 2021-05-28 华进半导体封装先导技术研发中心有限公司 一种功率器件封装结构及其制造方法、电子装置
JP2021120975A (ja) * 2020-01-30 2021-08-19 ローム株式会社 半導体装置及び半導体装置の製造方法
JP2021174847A (ja) * 2020-04-23 2021-11-01 株式会社デンソー 電子機器

Patent Citations (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5710748U (https=) * 1980-06-18 1982-01-20
JPS62104592U (https=) * 1985-12-19 1987-07-03
JPH1050926A (ja) * 1996-07-31 1998-02-20 Taiyo Yuden Co Ltd ハイブリッドモジュール
US20010002821A1 (en) * 1999-12-06 2001-06-07 Nec Corporation Apparatus and method for controlling radiation of electric waves
JP2002217363A (ja) * 2001-01-17 2002-08-02 Matsushita Electric Ind Co Ltd 電力制御系電子回路装置及びその製造方法
JP2006303006A (ja) * 2005-04-18 2006-11-02 Yaskawa Electric Corp パワーモジュール
DE102007036841A1 (de) * 2007-08-06 2009-02-12 Infineon Technologies Ag Halbleiterbauteil mit Halbleiterchip und Verfahren zu dessen Herstellung
JP2009224534A (ja) * 2008-03-17 2009-10-01 Yaskawa Electric Corp パワーモジュール
US20100148328A1 (en) * 2008-12-17 2010-06-17 Fairchild Semiconductor Corporation Power quad flat no-lead semiconductor die packages with isolated heat sink for high-voltage, high-power applications, systems using the same, and methods of making the same
WO2010147202A1 (ja) * 2009-06-19 2010-12-23 株式会社安川電機 電力変換装置
JP2018160699A (ja) * 2012-09-20 2018-10-11 ローム株式会社 半導体装置
US20150221588A1 (en) * 2012-10-17 2015-08-06 International Rectifier Corporation Surface Mountable Power Components
JP2014107378A (ja) * 2012-11-27 2014-06-09 Mitsubishi Electric Corp 電力用半導体装置
US9214416B1 (en) * 2013-06-22 2015-12-15 Courtney Furnival High speed, low loss and high density power semiconductor packages (μMaxPak) with molded surface mount high speed device(s) and multi-chip architectures
US20150279757A1 (en) * 2014-04-01 2015-10-01 Infineon Technologies Ag Semiconductor die package with multiple mounting configurations
US20160352246A1 (en) * 2015-05-29 2016-12-01 Delta Electronics Int'l (Singapore) Pte Ltd Power module
US20170110978A1 (en) * 2015-10-14 2017-04-20 Delta Electronics Int'l (Singapore) Pte Ltd Power module
WO2018198990A1 (ja) * 2017-04-24 2018-11-01 ローム株式会社 電子部品および半導体装置
US20190341332A1 (en) * 2018-05-02 2019-11-07 Semiconductor Components Industries, Llc High power module package structures
JP2021120975A (ja) * 2020-01-30 2021-08-19 ローム株式会社 半導体装置及び半導体装置の製造方法
JP2021174847A (ja) * 2020-04-23 2021-11-01 株式会社デンソー 電子機器
CN112864139A (zh) * 2020-12-31 2021-05-28 华进半导体封装先导技术研发中心有限公司 一种功率器件封装结构及其制造方法、电子装置

Also Published As

Publication number Publication date
US20250112143A1 (en) 2025-04-03
WO2024143541A1 (ja) 2024-07-04
CN119301761A (zh) 2025-01-10
DE112023001619T5 (de) 2025-04-03

Similar Documents

Publication Publication Date Title
CL2025003768A1 (es) Sistema y métodos de cribado estático
JPWO2024143541A1 (https=)
BR202022009269U2 (https=)
BR202022005961U2 (https=)
BY23963C1 (https=)
BY13140U (https=)
CN307049818S (https=)
CN307049217S (https=)
CN307048236S (https=)
CN307047959S (https=)
CN307047880S (https=)
CN307047862S (https=)
CN307045891S (https=)
CN307045476S (https=)
CN307045184S (https=)
CN307045161S (https=)
CN307045090S (https=)
CN307044831S (https=)
BY23965C1 (https=)
BY13176U (https=)
BY13175U (https=)
BY13174U (https=)
BY13172U (https=)
BY13170U (https=)
BY13169U (https=)

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20241128

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20241128

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20250902

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20251030

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20251217

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20260120

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20260309