JPWO2024143541A1 - - Google Patents
Info
- Publication number
- JPWO2024143541A1 JPWO2024143541A1 JP2024567982A JP2024567982A JPWO2024143541A1 JP WO2024143541 A1 JPWO2024143541 A1 JP WO2024143541A1 JP 2024567982 A JP2024567982 A JP 2024567982A JP 2024567982 A JP2024567982 A JP 2024567982A JP WO2024143541 A1 JPWO2024143541 A1 JP WO2024143541A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
- H02M7/42—Conversion of DC power input into AC power output without possibility of reversal
- H02M7/44—Conversion of DC power input into AC power output without possibility of reversal by static converters
- H02M7/48—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
- H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
- H10D62/8325—Silicon carbide
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W40/00—Arrangements for thermal protection or thermal control
- H10W40/20—Arrangements for cooling
- H10W40/25—Arrangements for cooling characterised by their materials
- H10W40/255—Arrangements for cooling characterised by their materials having a laminate or multilayered structure, e.g. direct bond copper [DBC] ceramic substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W40/00—Arrangements for thermal protection or thermal control
- H10W40/60—Securing means for detachable heating or cooling arrangements, e.g. clamps
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W40/00—Arrangements for thermal protection or thermal control
- H10W40/60—Securing means for detachable heating or cooling arrangements, e.g. clamps
- H10W40/611—Bolts or screws
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
- H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
- H10W70/65—Shapes or dispositions of interconnections
- H10W70/658—Shapes or dispositions of interconnections for devices provided for in groups H10D8/00 - H10D48/00
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
- H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
- H10W74/131—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed
- H10W74/134—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed the encapsulations being in grooves in the semiconductor body
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
- H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
- H10D12/411—Insulated-gate bipolar transistors [IGBT]
- H10D12/441—Vertical IGBTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
- H10D30/66—Vertical DMOS [VDMOS] FETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
- H10D84/141—VDMOS having built-in components
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
- H10D84/161—IGBT having built-in components
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W40/00—Arrangements for thermal protection or thermal control
- H10W40/20—Arrangements for cooling
- H10W40/231—Arrangements for cooling characterised by their places of attachment or cooling paths
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Inverter Devices (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Die Bonding (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2022211688 | 2022-12-28 | ||
| JP2023102768 | 2023-06-22 | ||
| PCT/JP2023/047275 WO2024143541A1 (ja) | 2022-12-28 | 2023-12-28 | 半導体デバイス、半導体モジュール、および製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2024143541A1 true JPWO2024143541A1 (https=) | 2024-07-04 |
| JPWO2024143541A5 JPWO2024143541A5 (https=) | 2025-02-17 |
Family
ID=91717904
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024567982A Pending JPWO2024143541A1 (https=) | 2022-12-28 | 2023-12-28 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20250112143A1 (https=) |
| JP (1) | JPWO2024143541A1 (https=) |
| CN (1) | CN119301761A (https=) |
| DE (1) | DE112023001619T5 (https=) |
| WO (1) | WO2024143541A1 (https=) |
Citations (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5710748U (https=) * | 1980-06-18 | 1982-01-20 | ||
| JPS62104592U (https=) * | 1985-12-19 | 1987-07-03 | ||
| JPH1050926A (ja) * | 1996-07-31 | 1998-02-20 | Taiyo Yuden Co Ltd | ハイブリッドモジュール |
| US20010002821A1 (en) * | 1999-12-06 | 2001-06-07 | Nec Corporation | Apparatus and method for controlling radiation of electric waves |
| JP2002217363A (ja) * | 2001-01-17 | 2002-08-02 | Matsushita Electric Ind Co Ltd | 電力制御系電子回路装置及びその製造方法 |
| JP2006303006A (ja) * | 2005-04-18 | 2006-11-02 | Yaskawa Electric Corp | パワーモジュール |
| DE102007036841A1 (de) * | 2007-08-06 | 2009-02-12 | Infineon Technologies Ag | Halbleiterbauteil mit Halbleiterchip und Verfahren zu dessen Herstellung |
| JP2009224534A (ja) * | 2008-03-17 | 2009-10-01 | Yaskawa Electric Corp | パワーモジュール |
| US20100148328A1 (en) * | 2008-12-17 | 2010-06-17 | Fairchild Semiconductor Corporation | Power quad flat no-lead semiconductor die packages with isolated heat sink for high-voltage, high-power applications, systems using the same, and methods of making the same |
| WO2010147202A1 (ja) * | 2009-06-19 | 2010-12-23 | 株式会社安川電機 | 電力変換装置 |
| JP2014107378A (ja) * | 2012-11-27 | 2014-06-09 | Mitsubishi Electric Corp | 電力用半導体装置 |
| US20150221588A1 (en) * | 2012-10-17 | 2015-08-06 | International Rectifier Corporation | Surface Mountable Power Components |
| US20150279757A1 (en) * | 2014-04-01 | 2015-10-01 | Infineon Technologies Ag | Semiconductor die package with multiple mounting configurations |
| US9214416B1 (en) * | 2013-06-22 | 2015-12-15 | Courtney Furnival | High speed, low loss and high density power semiconductor packages (μMaxPak) with molded surface mount high speed device(s) and multi-chip architectures |
| US20160352246A1 (en) * | 2015-05-29 | 2016-12-01 | Delta Electronics Int'l (Singapore) Pte Ltd | Power module |
| US20170110978A1 (en) * | 2015-10-14 | 2017-04-20 | Delta Electronics Int'l (Singapore) Pte Ltd | Power module |
| JP2018160699A (ja) * | 2012-09-20 | 2018-10-11 | ローム株式会社 | 半導体装置 |
| WO2018198990A1 (ja) * | 2017-04-24 | 2018-11-01 | ローム株式会社 | 電子部品および半導体装置 |
| US20190341332A1 (en) * | 2018-05-02 | 2019-11-07 | Semiconductor Components Industries, Llc | High power module package structures |
| CN112864139A (zh) * | 2020-12-31 | 2021-05-28 | 华进半导体封装先导技术研发中心有限公司 | 一种功率器件封装结构及其制造方法、电子装置 |
| JP2021120975A (ja) * | 2020-01-30 | 2021-08-19 | ローム株式会社 | 半導体装置及び半導体装置の製造方法 |
| JP2021174847A (ja) * | 2020-04-23 | 2021-11-01 | 株式会社デンソー | 電子機器 |
-
2023
- 2023-12-28 JP JP2024567982A patent/JPWO2024143541A1/ja active Pending
- 2023-12-28 WO PCT/JP2023/047275 patent/WO2024143541A1/ja not_active Ceased
- 2023-12-28 CN CN202380042617.7A patent/CN119301761A/zh active Pending
- 2023-12-28 DE DE112023001619.4T patent/DE112023001619T5/de active Pending
-
2024
- 2024-11-24 US US18/957,825 patent/US20250112143A1/en active Pending
Patent Citations (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5710748U (https=) * | 1980-06-18 | 1982-01-20 | ||
| JPS62104592U (https=) * | 1985-12-19 | 1987-07-03 | ||
| JPH1050926A (ja) * | 1996-07-31 | 1998-02-20 | Taiyo Yuden Co Ltd | ハイブリッドモジュール |
| US20010002821A1 (en) * | 1999-12-06 | 2001-06-07 | Nec Corporation | Apparatus and method for controlling radiation of electric waves |
| JP2002217363A (ja) * | 2001-01-17 | 2002-08-02 | Matsushita Electric Ind Co Ltd | 電力制御系電子回路装置及びその製造方法 |
| JP2006303006A (ja) * | 2005-04-18 | 2006-11-02 | Yaskawa Electric Corp | パワーモジュール |
| DE102007036841A1 (de) * | 2007-08-06 | 2009-02-12 | Infineon Technologies Ag | Halbleiterbauteil mit Halbleiterchip und Verfahren zu dessen Herstellung |
| JP2009224534A (ja) * | 2008-03-17 | 2009-10-01 | Yaskawa Electric Corp | パワーモジュール |
| US20100148328A1 (en) * | 2008-12-17 | 2010-06-17 | Fairchild Semiconductor Corporation | Power quad flat no-lead semiconductor die packages with isolated heat sink for high-voltage, high-power applications, systems using the same, and methods of making the same |
| WO2010147202A1 (ja) * | 2009-06-19 | 2010-12-23 | 株式会社安川電機 | 電力変換装置 |
| JP2018160699A (ja) * | 2012-09-20 | 2018-10-11 | ローム株式会社 | 半導体装置 |
| US20150221588A1 (en) * | 2012-10-17 | 2015-08-06 | International Rectifier Corporation | Surface Mountable Power Components |
| JP2014107378A (ja) * | 2012-11-27 | 2014-06-09 | Mitsubishi Electric Corp | 電力用半導体装置 |
| US9214416B1 (en) * | 2013-06-22 | 2015-12-15 | Courtney Furnival | High speed, low loss and high density power semiconductor packages (μMaxPak) with molded surface mount high speed device(s) and multi-chip architectures |
| US20150279757A1 (en) * | 2014-04-01 | 2015-10-01 | Infineon Technologies Ag | Semiconductor die package with multiple mounting configurations |
| US20160352246A1 (en) * | 2015-05-29 | 2016-12-01 | Delta Electronics Int'l (Singapore) Pte Ltd | Power module |
| US20170110978A1 (en) * | 2015-10-14 | 2017-04-20 | Delta Electronics Int'l (Singapore) Pte Ltd | Power module |
| WO2018198990A1 (ja) * | 2017-04-24 | 2018-11-01 | ローム株式会社 | 電子部品および半導体装置 |
| US20190341332A1 (en) * | 2018-05-02 | 2019-11-07 | Semiconductor Components Industries, Llc | High power module package structures |
| JP2021120975A (ja) * | 2020-01-30 | 2021-08-19 | ローム株式会社 | 半導体装置及び半導体装置の製造方法 |
| JP2021174847A (ja) * | 2020-04-23 | 2021-11-01 | 株式会社デンソー | 電子機器 |
| CN112864139A (zh) * | 2020-12-31 | 2021-05-28 | 华进半导体封装先导技术研发中心有限公司 | 一种功率器件封装结构及其制造方法、电子装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| US20250112143A1 (en) | 2025-04-03 |
| WO2024143541A1 (ja) | 2024-07-04 |
| CN119301761A (zh) | 2025-01-10 |
| DE112023001619T5 (de) | 2025-04-03 |
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