DE112022004169T5 - Halbleiterbauteil - Google Patents

Halbleiterbauteil Download PDF

Info

Publication number
DE112022004169T5
DE112022004169T5 DE112022004169.2T DE112022004169T DE112022004169T5 DE 112022004169 T5 DE112022004169 T5 DE 112022004169T5 DE 112022004169 T DE112022004169 T DE 112022004169T DE 112022004169 T5 DE112022004169 T5 DE 112022004169T5
Authority
DE
Germany
Prior art keywords
semiconductor
semiconductor elements
conductor
semiconductor device
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE112022004169.2T
Other languages
German (de)
English (en)
Inventor
Hiroto Sakai
Yuta OKAWAUCHI
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
Original Assignee
Rohm Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Publication of DE112022004169T5 publication Critical patent/DE112022004169T5/de
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
    • H02M7/42—Conversion of DC power input into AC power output without possibility of reversal
    • H02M7/44—Conversion of DC power input into AC power output without possibility of reversal by static converters
    • H02M7/48—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/611—Insulating or insulated package substrates; Interposers; Redistribution layers for connecting multiple chips together
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
    • H10W70/65—Shapes or dispositions of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/734—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Physics & Mathematics (AREA)
  • Geometry (AREA)
DE112022004169.2T 2021-09-29 2022-08-30 Halbleiterbauteil Pending DE112022004169T5 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021159368 2021-09-29
JP2021-159368 2021-09-29
PCT/JP2022/032604 WO2023053823A1 (ja) 2021-09-29 2022-08-30 半導体装置

Publications (1)

Publication Number Publication Date
DE112022004169T5 true DE112022004169T5 (de) 2024-06-13

Family

ID=85780595

Family Applications (1)

Application Number Title Priority Date Filing Date
DE112022004169.2T Pending DE112022004169T5 (de) 2021-09-29 2022-08-30 Halbleiterbauteil

Country Status (5)

Country Link
US (1) US20240186256A1 (https=)
JP (1) JPWO2023053823A1 (https=)
CN (1) CN118020155A (https=)
DE (1) DE112022004169T5 (https=)
WO (1) WO2023053823A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP4567881A1 (en) * 2023-12-04 2025-06-11 Hunan San'an Semiconductor Co., Ltd. Power semiconductor module, power semiconductor module heat dissipation packaging structure, and electrode controller
WO2025177812A1 (ja) * 2024-02-20 2025-08-28 ローム株式会社 半導体装置
WO2026023121A1 (ja) * 2024-07-22 2026-01-29 株式会社 東芝 半導体装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104380462B (zh) * 2012-06-01 2017-05-24 松下知识产权经营株式会社 功率半导体装置
DE112017001838T5 (de) * 2016-04-04 2018-12-20 Rohm Co., Ltd. Leistungsmodul und Herstellungsverfahren dafür
CN111418049B (zh) * 2018-06-06 2023-12-08 富士电机株式会社 半导体装置
JP7428018B2 (ja) * 2020-03-06 2024-02-06 富士電機株式会社 半導体モジュール

Also Published As

Publication number Publication date
WO2023053823A1 (ja) 2023-04-06
CN118020155A (zh) 2024-05-10
JPWO2023053823A1 (https=) 2023-04-06
US20240186256A1 (en) 2024-06-06

Similar Documents

Publication Publication Date Title
DE102007006447B4 (de) Elektronisches Modul und Verfahren zur Herstellung des elektronischen Moduls
DE102007025248B4 (de) Elektronisches Bauelement, das mindestens zwei Halbleiterleistungsbauteile aufweist und Verfahren zu dessen Herstellung
DE112022004169T5 (de) Halbleiterbauteil
DE112021001035B4 (de) Halbleiterbauteil
DE102007024413A1 (de) Bonddrahtloses Leistungsmodul mit doppelseitiger Einzelbauelementkühlung und Tauchbadkühlung
DE102022120081A1 (de) Leistungsschaltungsmodul
EP3794641B1 (de) Entwärmungsanordnung für ein halbleiterleistungsmodul
DE102022116833B4 (de) Halbleiterpackage mit niederparasitischer Verbindung zu einer passiven Vorrichtung und Verfahren zum Bestücken einer Halbleiterbaugruppe
DE202017007691U1 (de) Elektronische Komponente
DE112018001927T5 (de) Halbleiterbauelement
DE212020000704U1 (de) Leistungsmodul
DE212021000109U1 (de) Halbleiterbauteil
DE212021000231U1 (de) Halbleiterbauteil
DE112022001871T5 (de) Halbleiterbauelement
DE112022002286B4 (de) Verbindungsstruktur und halbleiterbauteil
DE102015108909A1 (de) Anordnung mehrerer Leistungshalbleiterchips und Verfahren zur Herstellung derselben
EP3619739B1 (de) Halbleitermodul
DE102015103555A1 (de) Elektronisches Bauteil und Leadframe
DE102022211996A1 (de) Leistungsmodul-layout für symmetrisches schalten und temperaturerfassung
DE112022002743T5 (de) Halbleitervorrichtung
DE102020125371B4 (de) Package mit Pad, welches eine offene Aussparung hat
DE112022002551T5 (de) Halbleiterbauteil
DE102015115312B4 (de) Halbleitermodul und Verfahren zum Betrieb eines Halbleitermoduls
EP3399549B1 (de) Halbleitermodul
DE102021128793B4 (de) Halbleitergehäuse

Legal Events

Date Code Title Description
R012 Request for examination validly filed
R079 Amendment of ipc main class

Free format text: PREVIOUS MAIN CLASS: H01L0025070000

Ipc: H10D0080200000