DE112019003882B4 - Lasersystem mit treppenförmig angeordneten slow-axis-kollimatoren - Google Patents

Lasersystem mit treppenförmig angeordneten slow-axis-kollimatoren Download PDF

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Publication number
DE112019003882B4
DE112019003882B4 DE112019003882.6T DE112019003882T DE112019003882B4 DE 112019003882 B4 DE112019003882 B4 DE 112019003882B4 DE 112019003882 T DE112019003882 T DE 112019003882T DE 112019003882 B4 DE112019003882 B4 DE 112019003882B4
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Prior art keywords
dispersive element
beams
wbc
laser system
wavelength
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DE112019003882.6T
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German (de)
English (en)
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DE112019003882T5 (de
Inventor
Bryan Lochman
Bien Chann
Matthew SAUTER
Wang-Long Zhou
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Panasonic Intellectual Property Management Co Ltd
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Panasonic Intellectual Property Management Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4062—Edge-emitting structures with an external cavity or using internal filters, e.g. Talbot filters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4012—Beam combining, e.g. by the use of fibres, gratings, polarisers, prisms
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/09—Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
    • G02B27/0916—Adapting the beam shape of a semiconductor light source such as a laser diode or an LED, e.g. for efficiently coupling into optical fibers
    • G02B27/0922—Adapting the beam shape of a semiconductor light source such as a laser diode or an LED, e.g. for efficiently coupling into optical fibers the semiconductor light source comprising an array of light emitters
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/10—Beam splitting or combining systems
    • G02B27/1006—Beam splitting or combining systems for splitting or combining different wavelengths
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/10—Beam splitting or combining systems
    • G02B27/1073—Beam splitting or combining systems characterized by manufacturing or alignment methods
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/10—Beam splitting or combining systems
    • G02B27/1086—Beam splitting or combining systems operating by diffraction only
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/30—Collimators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02255—Out-coupling of light using beam deflecting elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4043—Edge-emitting structures with vertically stacked active layers
    • H01S5/405—Two-dimensional arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Elements Other Than Lenses (AREA)
  • Lasers (AREA)
DE112019003882.6T 2018-10-15 2019-10-10 Lasersystem mit treppenförmig angeordneten slow-axis-kollimatoren Active DE112019003882B4 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201862745623P 2018-10-15 2018-10-15
US62/745,623 2018-10-15
PCT/US2019/055509 WO2020081335A1 (en) 2018-10-15 2019-10-10 Laser system with staircased slow-axis collimators

Publications (2)

Publication Number Publication Date
DE112019003882T5 DE112019003882T5 (de) 2021-04-22
DE112019003882B4 true DE112019003882B4 (de) 2022-12-01

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DE112019003882.6T Active DE112019003882B4 (de) 2018-10-15 2019-10-10 Lasersystem mit treppenförmig angeordneten slow-axis-kollimatoren

Country Status (5)

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US (3) US11183816B2 (https=)
JP (1) JP7153862B2 (https=)
CN (1) CN112868150B (https=)
DE (1) DE112019003882B4 (https=)
WO (1) WO2020081335A1 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7153862B2 (ja) * 2018-10-15 2022-10-17 パナソニックＩｐマネジメント株式会社 階段状スロー軸コリメータを有するレーザシステム
US11095084B1 (en) * 2019-02-07 2021-08-17 Panasonic Intellectual Property Management Co., Ltd. Laser system with isolated optical cavity
WO2023287954A1 (en) * 2021-07-16 2023-01-19 Panasonic Intellectual Property Management Co, Ltd Single emitter stacking for wavelength-beam-combining laser systems
CN115902832B (zh) * 2023-01-05 2026-02-24 北京小兀科技有限公司 一种解决单线激光雷达拖尾的方法
JP7412662B1 (ja) * 2023-07-12 2024-01-12 三菱電機株式会社 レーザ装置およびレーザ加工装置

Citations (2)

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US20110216417A1 (en) 2010-03-05 2011-09-08 TeraDiode, Inc. Selective Repositioning and Rotation Wavelength Beam Combining System and Method

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US6894846B1 (en) * 2003-10-30 2005-05-17 Alliance Fiber Optic Products Optical add/drop apparatus and the method for making the same
DK1756922T3 (da) * 2004-06-16 2008-11-10 Univ Danmarks Tekniske Segmenteret diode lasersystem
JP5905723B2 (ja) 2008-11-04 2016-04-20 マサチューセッツ インスティテュート オブ テクノロジー ２次元レーザ素子の外部キャビティ１次元多波長ビーム結合
US8488245B1 (en) 2011-03-07 2013-07-16 TeraDiode, Inc. Kilowatt-class diode laser system
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US20110216417A1 (en) 2010-03-05 2011-09-08 TeraDiode, Inc. Selective Repositioning and Rotation Wavelength Beam Combining System and Method

Also Published As

Publication number Publication date
CN112868150A (zh) 2021-05-28
US20230275404A1 (en) 2023-08-31
CN112868150B (zh) 2024-07-30
JP2022508765A (ja) 2022-01-19
US11682882B2 (en) 2023-06-20
US11183816B2 (en) 2021-11-23
DE112019003882T5 (de) 2021-04-22
US20220045483A1 (en) 2022-02-10
JP7153862B2 (ja) 2022-10-17
WO2020081335A9 (en) 2020-12-30
WO2020081335A1 (en) 2020-04-23
US20200119525A1 (en) 2020-04-16
US12107395B2 (en) 2024-10-01

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