JP7153862B2 - 階段状スロー軸コリメータを有するレーザシステム - Google Patents

階段状スロー軸コリメータを有するレーザシステム Download PDF

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Publication number
JP7153862B2
JP7153862B2 JP2021545363A JP2021545363A JP7153862B2 JP 7153862 B2 JP7153862 B2 JP 7153862B2 JP 2021545363 A JP2021545363 A JP 2021545363A JP 2021545363 A JP2021545363 A JP 2021545363A JP 7153862 B2 JP7153862 B2 JP 7153862B2
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dispersive element
wbc
laser system
wavelength
collimators
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Japanese (ja)
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JP2022508765A5 (https=
JP2022508765A (ja
JPWO2020081335A5 (https=
Inventor
ブライアン・ロックマン
ビエン・チャン
マシュー・ソーター
ワン-ロン・ジョウ
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Panasonic Intellectual Property Management Co Ltd
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Panasonic Intellectual Property Management Co Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/40Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031Edge-emitting structures
    • H01S5/4062Edge-emitting structures with an external cavity or using internal filters, e.g. Talbot filters
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/40Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4012Beam combining, e.g. by the use of fibres, gratings, polarisers, prisms
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/09Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
    • G02B27/0916Adapting the beam shape of a semiconductor light source such as a laser diode or an LED, e.g. for efficiently coupling into optical fibers
    • G02B27/0922Adapting the beam shape of a semiconductor light source such as a laser diode or an LED, e.g. for efficiently coupling into optical fibers the semiconductor light source comprising an array of light emitters
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/10Beam splitting or combining systems
    • G02B27/1006Beam splitting or combining systems for splitting or combining different wavelengths
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/10Beam splitting or combining systems
    • G02B27/1073Beam splitting or combining systems characterized by manufacturing or alignment methods
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/10Beam splitting or combining systems
    • G02B27/1086Beam splitting or combining systems operating by diffraction only
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/30Collimators
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • H01S5/0225Out-coupling of light
    • H01S5/02255Out-coupling of light using beam deflecting elements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/40Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031Edge-emitting structures
    • H01S5/4043Edge-emitting structures with vertically stacked active layers
    • H01S5/405Two-dimensional arrays
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/40Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4087Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/40Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025Array arrangements, e.g. constituted by discrete laser diodes or laser bar

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Elements Other Than Lenses (AREA)
  • Lasers (AREA)
JP2021545363A 2018-10-15 2019-10-10 階段状スロー軸コリメータを有するレーザシステム Active JP7153862B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201862745623P 2018-10-15 2018-10-15
US62/745,623 2018-10-15
PCT/US2019/055509 WO2020081335A1 (en) 2018-10-15 2019-10-10 Laser system with staircased slow-axis collimators

Publications (4)

Publication Number Publication Date
JP2022508765A JP2022508765A (ja) 2022-01-19
JP2022508765A5 JP2022508765A5 (https=) 2022-04-07
JPWO2020081335A5 JPWO2020081335A5 (https=) 2022-04-07
JP7153862B2 true JP7153862B2 (ja) 2022-10-17

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JP2021545363A Active JP7153862B2 (ja) 2018-10-15 2019-10-10 階段状スロー軸コリメータを有するレーザシステム

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US (3) US11183816B2 (https=)
JP (1) JP7153862B2 (https=)
CN (1) CN112868150B (https=)
DE (1) DE112019003882B4 (https=)
WO (1) WO2020081335A1 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7153862B2 (ja) * 2018-10-15 2022-10-17 パナソニックIpマネジメント株式会社 階段状スロー軸コリメータを有するレーザシステム
US11095084B1 (en) * 2019-02-07 2021-08-17 Panasonic Intellectual Property Management Co., Ltd. Laser system with isolated optical cavity
WO2023287954A1 (en) * 2021-07-16 2023-01-19 Panasonic Intellectual Property Management Co, Ltd Single emitter stacking for wavelength-beam-combining laser systems
CN115902832B (zh) * 2023-01-05 2026-02-24 北京小兀科技有限公司 一种解决单线激光雷达拖尾的方法
JP7412662B1 (ja) * 2023-07-12 2024-01-12 三菱電機株式会社 レーザ装置およびレーザ加工装置

Citations (10)

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US20070291812A1 (en) 2004-06-16 2007-12-20 Petersen Paul M Segmented Diode Laser System
US20120033697A1 (en) 2010-08-03 2012-02-09 President And Fellows Of Harvard College Wavelength beam combining of quantum cascade laser arrays
JP2012508453A (ja) 2008-11-04 2012-04-05 マサチューセッツ インスティテュート オブ テクノロジー 2次元レーザ素子の外部キャビティ1次元多波長ビーム結合
CN102916341A (zh) 2012-10-31 2013-02-06 中国科学院长春光学精密机械与物理研究所 一种单管半导体激光器合束方法
JP2013521666A (ja) 2010-03-05 2013-06-10 テラダイオード,インコーポレーテッド 波長ビーム結合システムおよび方法
WO2014087726A1 (ja) 2012-12-03 2014-06-12 三菱電機株式会社 半導体レーザ装置
US20150331245A1 (en) 2012-02-22 2015-11-19 Parviz Tayebati Wavelength beam combining laser systems with micro-optics
US20150362739A1 (en) 2014-06-13 2015-12-17 James Zambuto Optical alignment systems and methods for wavelength beam combining laser systems
US20160161752A1 (en) 2013-03-15 2016-06-09 Trumpf Laser Gmbh + Co. Kg Device for wavelength combining of laser beams
JP2018518048A (ja) 2015-05-13 2018-07-05 トルンプフ レーザー ゲゼルシャフト ミット ベシュレンクテル ハフツングTRUMPF Laser GmbH 可変フィードバック制御をともなう稠密波長ビーム結合

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Publication number Priority date Publication date Assignee Title
US20070291812A1 (en) 2004-06-16 2007-12-20 Petersen Paul M Segmented Diode Laser System
JP2012508453A (ja) 2008-11-04 2012-04-05 マサチューセッツ インスティテュート オブ テクノロジー 2次元レーザ素子の外部キャビティ1次元多波長ビーム結合
JP2013521666A (ja) 2010-03-05 2013-06-10 テラダイオード,インコーポレーテッド 波長ビーム結合システムおよび方法
US20120033697A1 (en) 2010-08-03 2012-02-09 President And Fellows Of Harvard College Wavelength beam combining of quantum cascade laser arrays
US20150331245A1 (en) 2012-02-22 2015-11-19 Parviz Tayebati Wavelength beam combining laser systems with micro-optics
CN102916341A (zh) 2012-10-31 2013-02-06 中国科学院长春光学精密机械与物理研究所 一种单管半导体激光器合束方法
WO2014087726A1 (ja) 2012-12-03 2014-06-12 三菱電機株式会社 半導体レーザ装置
US20160161752A1 (en) 2013-03-15 2016-06-09 Trumpf Laser Gmbh + Co. Kg Device for wavelength combining of laser beams
US20150362739A1 (en) 2014-06-13 2015-12-17 James Zambuto Optical alignment systems and methods for wavelength beam combining laser systems
JP2018518048A (ja) 2015-05-13 2018-07-05 トルンプフ レーザー ゲゼルシャフト ミット ベシュレンクテル ハフツングTRUMPF Laser GmbH 可変フィードバック制御をともなう稠密波長ビーム結合

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Publication number Publication date
CN112868150A (zh) 2021-05-28
US20230275404A1 (en) 2023-08-31
CN112868150B (zh) 2024-07-30
JP2022508765A (ja) 2022-01-19
US11682882B2 (en) 2023-06-20
DE112019003882B4 (de) 2022-12-01
US11183816B2 (en) 2021-11-23
DE112019003882T5 (de) 2021-04-22
US20220045483A1 (en) 2022-02-10
WO2020081335A9 (en) 2020-12-30
WO2020081335A1 (en) 2020-04-23
US20200119525A1 (en) 2020-04-16
US12107395B2 (en) 2024-10-01

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