DE112019000533B4 - Mehrere in eine Neuralsonde integrierte Lichtquellen zum Aktivieren mit mehreren Wellenlängen - Google Patents

Mehrere in eine Neuralsonde integrierte Lichtquellen zum Aktivieren mit mehreren Wellenlängen Download PDF

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DE112019000533B4
DE112019000533B4 DE112019000533.2T DE112019000533T DE112019000533B4 DE 112019000533 B4 DE112019000533 B4 DE 112019000533B4 DE 112019000533 T DE112019000533 T DE 112019000533T DE 112019000533 B4 DE112019000533 B4 DE 112019000533B4
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probe
light sources
light
layer
type
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English (en)
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DE112019000533T5 (de
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Hariklia Deligianni
Ko-Tao Lee
Ning Li
Devendra Sadana
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International Business Machines Corp
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International Business Machines Corp
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    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61N—ELECTROTHERAPY; MAGNETOTHERAPY; RADIATION THERAPY; ULTRASOUND THERAPY
    • A61N5/00—Radiation therapy
    • A61N5/06—Radiation therapy using light
    • A61N5/0601—Apparatus for use inside the body
    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61N—ELECTROTHERAPY; MAGNETOTHERAPY; RADIATION THERAPY; ULTRASOUND THERAPY
    • A61N5/00—Radiation therapy
    • A61N5/06—Radiation therapy using light
    • A61N5/0613—Apparatus adapted for a specific treatment
    • A61N5/0622—Optical stimulation for exciting neural tissue
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61N—ELECTROTHERAPY; MAGNETOTHERAPY; RADIATION THERAPY; ULTRASOUND THERAPY
    • A61N5/00—Radiation therapy
    • A61N5/06—Radiation therapy using light
    • A61N5/0601—Apparatus for use inside the body
    • A61N2005/0612—Apparatus for use inside the body using probes penetrating tissue; interstitial probes
    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61N—ELECTROTHERAPY; MAGNETOTHERAPY; RADIATION THERAPY; ULTRASOUND THERAPY
    • A61N5/00—Radiation therapy
    • A61N5/06—Radiation therapy using light
    • A61N2005/065—Light sources therefor
    • A61N2005/0651—Diodes
    • A61N2005/0652—Arrays of diodes
    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61N—ELECTROTHERAPY; MAGNETOTHERAPY; RADIATION THERAPY; ULTRASOUND THERAPY
    • A61N5/00—Radiation therapy
    • A61N5/06—Radiation therapy using light
    • A61N2005/0658—Radiation therapy using light characterised by the wavelength of light used
    • A61N2005/0659—Radiation therapy using light characterised by the wavelength of light used infrared
    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61N—ELECTROTHERAPY; MAGNETOTHERAPY; RADIATION THERAPY; ULTRASOUND THERAPY
    • A61N5/00—Radiation therapy
    • A61N5/06—Radiation therapy using light
    • A61N2005/0658—Radiation therapy using light characterised by the wavelength of light used
    • A61N2005/0662—Visible light
    • A61N2005/0663—Coloured light
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN

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  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Biomedical Technology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Radiology & Medical Imaging (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • Animal Behavior & Ethology (AREA)
  • Pathology (AREA)
  • Public Health (AREA)
  • Veterinary Medicine (AREA)
  • Biophysics (AREA)
  • Neurosurgery (AREA)
  • Led Devices (AREA)
  • Radiation-Therapy Devices (AREA)
  • Led Device Packages (AREA)
DE112019000533.2T 2018-01-26 2019-01-15 Mehrere in eine Neuralsonde integrierte Lichtquellen zum Aktivieren mit mehreren Wellenlängen Active DE112019000533B4 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US15/881,211 2018-01-26
US15/881,211 US10874876B2 (en) 2018-01-26 2018-01-26 Multiple light sources integrated in a neural probe for multi-wavelength activation
PCT/IB2019/050291 WO2019145821A1 (en) 2018-01-26 2019-01-15 Multiple light sources integrated in a neural probe for multi-wavelength activation

Publications (2)

Publication Number Publication Date
DE112019000533T5 DE112019000533T5 (de) 2020-10-08
DE112019000533B4 true DE112019000533B4 (de) 2025-02-06

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DE112019000533.2T Active DE112019000533B4 (de) 2018-01-26 2019-01-15 Mehrere in eine Neuralsonde integrierte Lichtquellen zum Aktivieren mit mehreren Wellenlängen

Country Status (6)

Country Link
US (1) US10874876B2 (https=)
JP (2) JP2021511100A (https=)
CN (1) CN111629782B (https=)
DE (1) DE112019000533B4 (https=)
GB (1) GB2585295B (https=)
WO (1) WO2019145821A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021026218A2 (en) 2019-08-05 2021-02-11 Know Bio, Llc Treatment of central nervous system disorders
EP3906967B1 (de) * 2020-05-05 2024-02-28 Richard Wolf GmbH Lichtapplikator
CN114883309A (zh) * 2022-05-26 2022-08-09 中国科学院半导体研究所 植入式光源及其制备方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE112010003700T5 (de) 2009-09-18 2013-02-28 Soraa, Inc. Power-leuchtdiode und verfahren mit stromdichtebetrieb
WO2017004576A1 (en) 2015-07-02 2017-01-05 The Board Of Trustees Of The University Of Illinois Wireless optofluidic systems for programmable in vivo pharmacology and optogenetics

Family Cites Families (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6379296B1 (en) * 1999-03-26 2002-04-30 Richard W. Baggett Medical lighting device
GB9912583D0 (en) * 1999-05-28 1999-07-28 Arima Optoelectronics Corp A light emitting diode having a two well system with asymmetric tunneling
US6921413B2 (en) 2000-08-16 2005-07-26 Vanderbilt University Methods and devices for optical stimulation of neural tissues
KR20060063947A (ko) * 2003-08-22 2006-06-12 더 보드 오브 트러스티스 오브 더 유니버시티 오브 일리노이 반도체장치 및 방법
JP4281569B2 (ja) * 2004-02-17 2009-06-17 日立電線株式会社 半導体発光素子用エピタキシャルウェハの製造方法
RU2007117152A (ru) * 2004-10-08 2008-11-20 Дзе Риджентс Оф Дзе Юниверсити Оф Калифорния (Us) Высокоэффективные светоизлучающие диоды
US20140324138A1 (en) 2007-05-09 2014-10-30 Massachusetts Institute Of Technology Wirelessly-powered illumination of biological tissue
JP5386747B2 (ja) * 2008-02-21 2014-01-15 公益財団法人神奈川科学技術アカデミー 半導体基板、半導体素子、発光素子及び電子素子
TW201032350A (en) * 2009-02-20 2010-09-01 Univ Nat Central A manufacturing method of LED
KR101019464B1 (ko) * 2009-03-25 2011-03-07 한국과학기술연구원 광 자극 시스템
CN101521258B (zh) * 2009-03-27 2013-07-31 华灿光电股份有限公司 一种提高发光二极管外量子效率的方法
US8618575B2 (en) * 2010-09-21 2013-12-31 Quantum Electro Opto Systems Sdn. Bhd. Light emitting and lasing semiconductor methods and devices
CN102185074A (zh) * 2011-04-07 2011-09-14 上海大学 Ag/氧化锌基复合透明电极的发光二极管及其制备方法
US9801559B2 (en) 2011-07-25 2017-10-31 Diagnostic Biochips, Inc. Integrated optical neural probe
US9636656B2 (en) * 2011-12-07 2017-05-02 California Institute Of Technology Caged compound delivery and related compositions, methods and systems
GB201121874D0 (en) 2011-12-20 2012-02-01 Mled Ltd Integrated medical device
CN102931302B (zh) * 2012-10-17 2015-04-22 华灿光电股份有限公司 一种蓝绿光二极管外延片及其制造方法
CN103083827B (zh) * 2012-12-26 2015-09-16 东南大学 一种植入式蓝宝石基二维神经激励芯片及其制备方法
KR102053388B1 (ko) * 2013-06-11 2019-12-06 엘지이노텍 주식회사 발광소자
US10004917B2 (en) * 2013-07-11 2018-06-26 Board Of Trustees Of Michigan State University Neural prosthetic device and method of making same
CN104332539B (zh) * 2013-07-22 2017-10-24 中国科学院福建物质结构研究所 GaN基LED外延结构及其制造方法
US9636028B2 (en) 2013-11-08 2017-05-02 Neuronexus Technologies, Inc. Three-dimensional neural probe microelectrode array and method of manufacture
WO2015094076A1 (en) 2013-12-20 2015-06-25 Neuronano Ab Medical device comprising an electrode and a light source
KR101564710B1 (ko) * 2014-05-27 2015-11-02 (재)한국나노기술원 파장 제어가 가능한 탐침의 제조방법 및 그에 의해 제조된 탐침
CN105637641B (zh) * 2014-07-30 2018-08-28 孙润光 一种红色无机发光二极管显示器件及其制作方法
JP6281087B2 (ja) * 2014-10-02 2018-02-21 株式会社テクノリンク 生体刺激装置
US9425351B2 (en) * 2014-10-06 2016-08-23 Wisconsin Alumni Research Foundation Hybrid heterostructure light emitting devices
JP5875131B1 (ja) * 2014-11-13 2016-03-02 博基 島 細胞活性化装置
US9653642B1 (en) * 2014-12-23 2017-05-16 Soraa Laser Diode, Inc. Manufacturable RGB display based on thin film gallium and nitrogen containing light emitting diodes
CN104600165B (zh) * 2015-02-06 2018-03-23 安徽三安光电有限公司 一种氮化物发光二极体结构
US10695581B2 (en) 2015-06-19 2020-06-30 The Regents Of The University Of Michigan Multicolor neural optoelectrode
WO2017019482A1 (en) 2015-07-24 2017-02-02 Massachusetts Institute Of Technology Apparatus, systems, and methods for biomedical imaging and stimulation
JP6404282B2 (ja) * 2015-08-17 2018-10-10 ソレアロ テクノロジーズ コーポレイション 多接合反転変成ソーラーセル
GB201522790D0 (en) * 2015-12-23 2016-02-03 Univ Newcastle Temperature sensor
CN106910803A (zh) * 2015-12-23 2017-06-30 比亚迪股份有限公司 发光二极管外延片及其制造方法
CN105633226A (zh) * 2015-12-31 2016-06-01 天津三安光电有限公司 一种具有双结的红外光发光二极管
CN106308754A (zh) 2016-09-18 2017-01-11 广东顺德中山大学卡内基梅隆大学国际联合研究院 一种可植入式微型led神经探针
CN106913315A (zh) 2017-03-16 2017-07-04 中国科学院半导体研究所 光刺激及信号采集探针

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE112010003700T5 (de) 2009-09-18 2013-02-28 Soraa, Inc. Power-leuchtdiode und verfahren mit stromdichtebetrieb
WO2017004576A1 (en) 2015-07-02 2017-01-05 The Board Of Trustees Of The University Of Illinois Wireless optofluidic systems for programmable in vivo pharmacology and optogenetics

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
SUN, Xiaojuan, et al. „Short-wavelenght light beam in situ monitoring growth of INGaN/GaN green LEDs by MOCVD" Nanoscale research letters, 2012
SUN, Xiaojuan, et al. Short-wavelength light beam in situ monitoring growth of InGaN/GaN green LEDs by MOCVD. Nanoscale research letters, 2012, 7. Jg., S. 1-6.

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GB2585295A (en) 2021-01-06
JP7497942B2 (ja) 2024-06-11
DE112019000533T5 (de) 2020-10-08
US10874876B2 (en) 2020-12-29
WO2019145821A1 (en) 2019-08-01
JP2021511100A (ja) 2021-05-06
CN111629782B (zh) 2022-12-20
US20190232083A1 (en) 2019-08-01
JP2023036739A (ja) 2023-03-14
CN111629782A (zh) 2020-09-04
GB2585295B (en) 2022-06-08
GB202013202D0 (en) 2020-10-07

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