DE112018004818A5 - Optoelektronisches Halbleiterbauelement - Google Patents
Optoelektronisches Halbleiterbauelement Download PDFInfo
- Publication number
- DE112018004818A5 DE112018004818A5 DE112018004818.7T DE112018004818T DE112018004818A5 DE 112018004818 A5 DE112018004818 A5 DE 112018004818A5 DE 112018004818 T DE112018004818 T DE 112018004818T DE 112018004818 A5 DE112018004818 A5 DE 112018004818A5
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor component
- optoelectronic semiconductor
- optoelectronic
- component
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005693 optoelectronics Effects 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
- H01L31/03048—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP comprising a nitride compounds, e.g. InGaN
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2004—Confining in the direction perpendicular to the layer structure
- H01S5/2009—Confining in the direction perpendicular to the layer structure by using electron barrier layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
- H01S5/3054—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure p-doping
- H01S5/3063—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure p-doping using Mg
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Led Devices (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102017119931.4A DE102017119931A1 (de) | 2017-08-30 | 2017-08-30 | Optoelektronisches Halbleiterbauelement |
DE102017119931.4 | 2017-08-30 | ||
PCT/EP2018/071786 WO2019042746A1 (de) | 2017-08-30 | 2018-08-10 | Optoelektronisches halbleiterbauelement |
Publications (1)
Publication Number | Publication Date |
---|---|
DE112018004818A5 true DE112018004818A5 (de) | 2020-06-04 |
Family
ID=63350515
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE102017119931.4A Withdrawn DE102017119931A1 (de) | 2017-08-30 | 2017-08-30 | Optoelektronisches Halbleiterbauelement |
DE112018004818.7T Pending DE112018004818A5 (de) | 2017-08-30 | 2018-08-10 | Optoelektronisches Halbleiterbauelement |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE102017119931.4A Withdrawn DE102017119931A1 (de) | 2017-08-30 | 2017-08-30 | Optoelektronisches Halbleiterbauelement |
Country Status (3)
Country | Link |
---|---|
US (1) | US11527865B2 (de) |
DE (2) | DE102017119931A1 (de) |
WO (1) | WO2019042746A1 (de) |
Family Cites Families (48)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5740192A (en) * | 1994-12-19 | 1998-04-14 | Kabushiki Kaisha Toshiba | Semiconductor laser |
US5679965A (en) * | 1995-03-29 | 1997-10-21 | North Carolina State University | Integrated heterostructures of Group III-V nitride semiconductor materials including epitaxial ohmic contact, non-nitride buffer layer and methods of fabricating same |
JP3688843B2 (ja) * | 1996-09-06 | 2005-08-31 | 株式会社東芝 | 窒化物系半導体素子の製造方法 |
GB2327145A (en) * | 1997-07-10 | 1999-01-13 | Sharp Kk | Graded layers in an optoelectronic semiconductor device |
US6657300B2 (en) * | 1998-06-05 | 2003-12-02 | Lumileds Lighting U.S., Llc | Formation of ohmic contacts in III-nitride light emitting devices |
US6515313B1 (en) * | 1999-12-02 | 2003-02-04 | Cree Lighting Company | High efficiency light emitters with reduced polarization-induced charges |
JP3453558B2 (ja) * | 2000-12-25 | 2003-10-06 | 松下電器産業株式会社 | 窒化物半導体素子 |
JP2002289955A (ja) * | 2001-03-23 | 2002-10-04 | Sharp Corp | 半導体レーザ素子とその製造方法および光学式情報再生装置 |
US6744075B2 (en) * | 2001-09-17 | 2004-06-01 | Sanyo Electric Co., Ltd. | Nitride-based semiconductor light-emitting device and method of forming the same |
US6618413B2 (en) * | 2001-12-21 | 2003-09-09 | Xerox Corporation | Graded semiconductor layers for reducing threshold voltage for a nitride-based laser diode structure |
TW561637B (en) * | 2002-10-16 | 2003-11-11 | Epistar Corp | LED having contact layer with dual dopant state |
KR101386192B1 (ko) * | 2004-01-26 | 2014-04-17 | 오스람 옵토 세미컨덕터스 게엠베하 | 전류 분산 구조물을 갖는 박막 led |
US7737453B2 (en) * | 2004-05-29 | 2010-06-15 | Huga Optotech Inc. | Light emitting diode structure |
US7122839B2 (en) * | 2004-10-29 | 2006-10-17 | Philips Lumileds Lighting Company, Llc | Semiconductor light emitting devices with graded composition light emitting layers |
KR100662191B1 (ko) * | 2004-12-23 | 2006-12-27 | 엘지이노텍 주식회사 | 질화물 반도체 발광소자 및 그 제조방법 |
WO2006112167A1 (ja) * | 2005-04-01 | 2006-10-26 | Sharp Kabushiki Kaisha | p型窒化物半導体の製造方法及びその方法を用いて作製された半導体装置 |
JP2007019399A (ja) * | 2005-07-11 | 2007-01-25 | Toshiba Corp | 半導体レーザ装置 |
JP2007080996A (ja) * | 2005-09-13 | 2007-03-29 | Sony Corp | GaN系半導体発光素子及びその製造方法 |
EP1883141B1 (de) * | 2006-07-27 | 2017-05-24 | OSRAM Opto Semiconductors GmbH | LD oder LED mit Übergitter-Mantelschicht |
DE102006046227A1 (de) * | 2006-07-27 | 2008-01-31 | Osram Opto Semiconductors Gmbh | Halbleiter-Schichtstruktur mit Übergitter |
US7769066B2 (en) * | 2006-11-15 | 2010-08-03 | Cree, Inc. | Laser diode and method for fabricating same |
DE102008052405A1 (de) | 2008-10-21 | 2010-04-22 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauelement |
JP5352248B2 (ja) | 2009-01-09 | 2013-11-27 | Dowaエレクトロニクス株式会社 | 窒化物半導体発光素子およびその製造方法 |
US8294179B1 (en) * | 2009-04-17 | 2012-10-23 | Soraa, Inc. | Optical device structure using GaN substrates and growth structures for laser applications |
JP4905514B2 (ja) * | 2009-07-15 | 2012-03-28 | 住友電気工業株式会社 | 窒化物系半導体発光素子 |
US8536615B1 (en) * | 2009-12-16 | 2013-09-17 | Cree, Inc. | Semiconductor device structures with modulated and delta doping and related methods |
TWI649895B (zh) * | 2010-04-30 | 2019-02-01 | 美國波士頓大學信託會 | 具能帶結構位變動之高效率紫外光發光二極體 |
KR101201641B1 (ko) * | 2011-11-02 | 2012-11-14 | 주식회사 퀀텀디바이스 | 투명 박막, 이를 포함하는 발광 소자와 이들의 제조 방법 |
JP5988568B2 (ja) * | 2011-11-14 | 2016-09-07 | Dowaエレクトロニクス株式会社 | 半導体発光素子およびその製造方法 |
JP5874593B2 (ja) * | 2011-12-23 | 2016-03-02 | 豊田合成株式会社 | Iii族窒化物半導体発光素子とその製造方法 |
US10164150B2 (en) * | 2012-03-29 | 2018-12-25 | Seoul Viosys Co., Ltd. | Near UV light emitting device |
US9362719B2 (en) * | 2012-03-30 | 2016-06-07 | The Regents Of The University Of Michigan | GaN-based quantum dot visible laser |
JP5699983B2 (ja) * | 2012-04-27 | 2015-04-15 | 住友電気工業株式会社 | 窒化ガリウム系半導体を作製する方法、iii族窒化物半導体デバイスを作製する方法、及びiii族窒化物半導体デバイス |
CN103050595A (zh) * | 2012-12-28 | 2013-04-17 | 厦门市三安光电科技有限公司 | 氮化物发光二极管 |
KR102140274B1 (ko) * | 2014-02-19 | 2020-07-31 | 엘지이노텍 주식회사 | 발광소자 |
TW201545372A (zh) * | 2014-05-30 | 2015-12-01 | Mitsubishi Chem Corp | 磊晶晶圓、半導體發光元件、發光裝置及磊晶晶圓之製造方法 |
CN104064644B (zh) * | 2014-06-30 | 2016-08-31 | 湘能华磊光电股份有限公司 | Led的量子阱结构、其制作方法及包括其的led外延片 |
DE102015113670A1 (de) * | 2014-08-19 | 2016-02-25 | Seoul Viosys Co., Ltd | Leuchtvorrichtung und Verfahren zu deren Herstellung |
KR102264671B1 (ko) | 2014-09-30 | 2021-06-15 | 서울바이오시스 주식회사 | 자외선 발광소자 |
CN104409587B (zh) * | 2014-10-22 | 2016-12-28 | 太原理工大学 | 一种InGaN基蓝绿光发光二极管外延结构及生长方法 |
CN105185885A (zh) * | 2015-06-24 | 2015-12-23 | 聚灿光电科技股份有限公司 | Led芯片及其制备方法 |
CN105023978A (zh) * | 2015-07-20 | 2015-11-04 | 聚灿光电科技股份有限公司 | 低吸收led外延结构及其制备方法 |
CN105161586A (zh) * | 2015-09-29 | 2015-12-16 | 山东浪潮华光光电子股份有限公司 | 具有组合势垒多量子阱的led外延结构及其制备方法 |
CN105470357B (zh) * | 2015-12-31 | 2018-05-22 | 华灿光电(苏州)有限公司 | AlN模板、AlN模板的制备方法及AlN模板上的半导体器件 |
CN105720150A (zh) * | 2016-01-11 | 2016-06-29 | 中山大学 | 一种氧化锌基透明电极结构GaN基LED芯片及其制作方法 |
CN106784184A (zh) * | 2016-12-21 | 2017-05-31 | 湘能华磊光电股份有限公司 | 复合P型GaN层的LED外延结构及其制备方法 |
US10276746B1 (en) * | 2017-10-18 | 2019-04-30 | Bolb Inc. | Polarization electric field assisted hole supplier and p-type contact structure, light emitting device and photodetector using the same |
US20230006426A1 (en) * | 2020-02-28 | 2023-01-05 | The Regents Of The University Of California | Group iii-n light emitter electrically injected by hot carriers from auger recombination |
-
2017
- 2017-08-30 DE DE102017119931.4A patent/DE102017119931A1/de not_active Withdrawn
-
2018
- 2018-08-10 WO PCT/EP2018/071786 patent/WO2019042746A1/de active Application Filing
- 2018-08-10 DE DE112018004818.7T patent/DE112018004818A5/de active Pending
- 2018-08-10 US US16/641,851 patent/US11527865B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US11527865B2 (en) | 2022-12-13 |
DE102017119931A1 (de) | 2019-02-28 |
WO2019042746A1 (de) | 2019-03-07 |
US20200220325A1 (en) | 2020-07-09 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
R012 | Request for examination validly filed | ||
R016 | Response to examination communication |