DE112016004625T5 - Dampfphasenwachstumseinrichtung und Abnormalitätsdetektionsverfahren - Google Patents

Dampfphasenwachstumseinrichtung und Abnormalitätsdetektionsverfahren Download PDF

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Publication number
DE112016004625T5
DE112016004625T5 DE112016004625.1T DE112016004625T DE112016004625T5 DE 112016004625 T5 DE112016004625 T5 DE 112016004625T5 DE 112016004625 T DE112016004625 T DE 112016004625T DE 112016004625 T5 DE112016004625 T5 DE 112016004625T5
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DE
Germany
Prior art keywords
heater
threshold
difference
value
vapor phase
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
DE112016004625.1T
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German (de)
English (en)
Inventor
Takanori HAYANO
Hideki Ito
Tatsuhiko IIJIMA
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nuflare Technology Inc
Original Assignee
Nuflare Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nuflare Technology Inc filed Critical Nuflare Technology Inc
Publication of DE112016004625T5 publication Critical patent/DE112016004625T5/de
Ceased legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602—Temperature monitoring

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
DE112016004625.1T 2015-10-08 2016-09-30 Dampfphasenwachstumseinrichtung und Abnormalitätsdetektionsverfahren Ceased DE112016004625T5 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2015-200348 2015-10-08
JP2015200348A JP2017073498A (ja) 2015-10-08 2015-10-08 気相成長装置および異常検出方法
PCT/JP2016/079070 WO2017061334A1 (ja) 2015-10-08 2016-09-30 気相成長装置および異常検出方法

Publications (1)

Publication Number Publication Date
DE112016004625T5 true DE112016004625T5 (de) 2018-06-21

Family

ID=58487648

Family Applications (1)

Application Number Title Priority Date Filing Date
DE112016004625.1T Ceased DE112016004625T5 (de) 2015-10-08 2016-09-30 Dampfphasenwachstumseinrichtung und Abnormalitätsdetektionsverfahren

Country Status (5)

Country Link
US (1) US20180291507A1 (cg-RX-API-DMAC7.html)
JP (1) JP2017073498A (cg-RX-API-DMAC7.html)
DE (1) DE112016004625T5 (cg-RX-API-DMAC7.html)
TW (1) TWI626331B (cg-RX-API-DMAC7.html)
WO (1) WO2017061334A1 (cg-RX-API-DMAC7.html)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102018101010B4 (de) * 2017-09-25 2025-01-09 X-Fab Semiconductor Foundries Ag Echtzeit Monitoring eines Mehrzonen-Vertikalofens mit frühzeitiger Erkennung eines Ausfalls eines Heizzonen-Elements

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009245978A (ja) 2008-03-28 2009-10-22 Yokogawa Electric Corp 半導体製造装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002352938A (ja) * 2001-05-28 2002-12-06 Tokyo Electron Ltd 熱処理装置のヒ−タ素線の断線予測方法及び熱処理装置
JP3988942B2 (ja) * 2003-03-31 2007-10-10 株式会社国際電気セミコンダクターサービス ヒータ検査装置及びそれを搭載した半導体製造装置
JP2006165200A (ja) * 2004-12-06 2006-06-22 Kokusai Electric Semiconductor Service Inc 半導体製造装置における抵抗加熱ヒータの抵抗値検出装置、半導体製造装置における抵抗加熱ヒータの劣化診断装置及びネットワークシステム
JP4326570B2 (ja) * 2007-04-17 2009-09-09 東京エレクトロン株式会社 ヒータ素線の寿命予測方法，熱処理装置，記録媒体，ヒータ素線の寿命予測処理システム
JP4343253B1 (ja) * 2008-03-27 2009-10-14 Ｔｄｋ株式会社 密閉容器の蓋開閉装置及び該開閉装置を用いたガス置換装置
KR101182502B1 (ko) * 2008-09-30 2012-09-12 도쿄엘렉트론가부시키가이샤 기판의 이상 배치 상태의 검지 방법, 기판 처리 방법, 컴퓨터 판독 가능한 기억 매체 및 기판 처리 장치
WO2012165174A1 (ja) * 2011-06-01 2012-12-06 シャープ株式会社 抵抗加熱ヒータの劣化検出装置および方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009245978A (ja) 2008-03-28 2009-10-22 Yokogawa Electric Corp 半導体製造装置

Also Published As

Publication number Publication date
TW201723218A (zh) 2017-07-01
US20180291507A1 (en) 2018-10-11
WO2017061334A1 (ja) 2017-04-13
TWI626331B (zh) 2018-06-11
JP2017073498A (ja) 2017-04-13

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