DE112016004248A5 - Optoelektronisches Halbleiterbauteil und 3D-Drucker damit - Google Patents

Optoelektronisches Halbleiterbauteil und 3D-Drucker damit Download PDF

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Publication number
DE112016004248A5
DE112016004248A5 DE112016004248.5T DE112016004248T DE112016004248A5 DE 112016004248 A5 DE112016004248 A5 DE 112016004248A5 DE 112016004248 T DE112016004248 T DE 112016004248T DE 112016004248 A5 DE112016004248 A5 DE 112016004248A5
Authority
DE
Germany
Prior art keywords
printer
semiconductor device
optoelectronic semiconductor
optoelectronic
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE112016004248.5T
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English (en)
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DE112016004248B4 (de
Inventor
Nikolaus Gmeinwieser
Norwin Von Malm
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
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Publication of DE112016004248A5 publication Critical patent/DE112016004248A5/de
Application granted granted Critical
Publication of DE112016004248B4 publication Critical patent/DE112016004248B4/de
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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C64/00—Additive manufacturing, i.e. manufacturing of three-dimensional [3D] objects by additive deposition, additive agglomeration or additive layering, e.g. by 3D printing, stereolithography or selective laser sintering
    • B29C64/10—Processes of additive manufacturing
    • B29C64/106—Processes of additive manufacturing using only liquids or viscous materials, e.g. depositing a continuous bead of viscous material
    • B29C64/124—Processes of additive manufacturing using only liquids or viscous materials, e.g. depositing a continuous bead of viscous material using layers of liquid which are selectively solidified
    • B29C64/129—Processes of additive manufacturing using only liquids or viscous materials, e.g. depositing a continuous bead of viscous material using layers of liquid which are selectively solidified characterised by the energy source therefor, e.g. by global irradiation combined with a mask
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C64/00—Additive manufacturing, i.e. manufacturing of three-dimensional [3D] objects by additive deposition, additive agglomeration or additive layering, e.g. by 3D printing, stereolithography or selective laser sintering
    • B29C64/20—Apparatus for additive manufacturing; Details thereof or accessories therefor
    • B29C64/264—Arrangements for irradiation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C64/00—Additive manufacturing, i.e. manufacturing of three-dimensional [3D] objects by additive deposition, additive agglomeration or additive layering, e.g. by 3D printing, stereolithography or selective laser sintering
    • B29C64/20—Apparatus for additive manufacturing; Details thereof or accessories therefor
    • B29C64/295—Heating elements
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B33—ADDITIVE MANUFACTURING TECHNOLOGY
    • B33Y—ADDITIVE MANUFACTURING, i.e. MANUFACTURING OF THREE-DIMENSIONAL [3-D] OBJECTS BY ADDITIVE DEPOSITION, ADDITIVE AGGLOMERATION OR ADDITIVE LAYERING, e.g. BY 3-D PRINTING, STEREOLITHOGRAPHY OR SELECTIVE LASER SINTERING
    • B33Y30/00—Apparatus for additive manufacturing; Details thereof or accessories therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/382—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body

Landscapes

  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Optics & Photonics (AREA)
  • Mechanical Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Led Device Packages (AREA)
DE112016004248.5T 2015-09-18 2016-09-08 Optoelektronisches Halbleiterbauteil und 3D-Drucker Active DE112016004248B4 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102015115810.8A DE102015115810A1 (de) 2015-09-18 2015-09-18 Optoelektronisches Halbleiterbauteil und 3D-Drucker
DE102015115810.8 2015-09-18
PCT/EP2016/071202 WO2017045995A1 (de) 2015-09-18 2016-09-08 Optoelektronisches halbleiterbauteil und 3d-drucker damit

Publications (2)

Publication Number Publication Date
DE112016004248A5 true DE112016004248A5 (de) 2018-05-24
DE112016004248B4 DE112016004248B4 (de) 2021-07-29

Family

ID=56958895

Family Applications (2)

Application Number Title Priority Date Filing Date
DE102015115810.8A Withdrawn DE102015115810A1 (de) 2015-09-18 2015-09-18 Optoelektronisches Halbleiterbauteil und 3D-Drucker
DE112016004248.5T Active DE112016004248B4 (de) 2015-09-18 2016-09-08 Optoelektronisches Halbleiterbauteil und 3D-Drucker

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE102015115810.8A Withdrawn DE102015115810A1 (de) 2015-09-18 2015-09-18 Optoelektronisches Halbleiterbauteil und 3D-Drucker

Country Status (3)

Country Link
US (2) US10906235B2 (de)
DE (2) DE102015115810A1 (de)
WO (1) WO2017045995A1 (de)

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DE102017104871A1 (de) * 2017-03-08 2018-09-13 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauteil
CN107069431A (zh) * 2017-06-05 2017-08-18 太原理工大学 一种基于3D打印的GaAs基边发射激光器制备方法
US11749790B2 (en) 2017-12-20 2023-09-05 Lumileds Llc Segmented LED with embedded transistors
US11961875B2 (en) * 2017-12-20 2024-04-16 Lumileds Llc Monolithic segmented LED array architecture with islanded epitaxial growth
US20190198720A1 (en) 2017-12-22 2019-06-27 Lumileds Llc Particle systems and patterning for monolithic led arrays
US10964845B2 (en) 2018-09-27 2021-03-30 Lumileds Llc Micro light emitting devices
US10923628B2 (en) 2018-09-27 2021-02-16 Lumileds Llc Micrometer scale light emitting diode displays on patterned templates and substrates
US10811460B2 (en) 2018-09-27 2020-10-20 Lumileds Holding B.V. Micrometer scale light emitting diode displays on patterned templates and substrates
US11271033B2 (en) * 2018-09-27 2022-03-08 Lumileds Llc Micro light emitting devices
DE102019211001A1 (de) * 2019-07-24 2021-01-28 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur digitalen Erzeugung eines optischen Elements mit integrierten Funktionalitäten und derart hergestelltes optisches Element
US11674795B2 (en) 2019-12-18 2023-06-13 Lumileds Llc Miniature pattern projector using microLEDs and micro-optics
US11923398B2 (en) 2019-12-23 2024-03-05 Lumileds Llc III-nitride multi-wavelength LED arrays
US11404473B2 (en) 2019-12-23 2022-08-02 Lumileds Llc III-nitride multi-wavelength LED arrays
US11848402B2 (en) 2020-03-11 2023-12-19 Lumileds Llc Light emitting diode devices with multilayer composite film including current spreading layer
US11569415B2 (en) 2020-03-11 2023-01-31 Lumileds Llc Light emitting diode devices with defined hard mask opening
US11942507B2 (en) 2020-03-11 2024-03-26 Lumileds Llc Light emitting diode devices
US11735695B2 (en) 2020-03-11 2023-08-22 Lumileds Llc Light emitting diode devices with current spreading layer
US11901491B2 (en) 2020-10-29 2024-02-13 Lumileds Llc Light emitting diode devices
US11626538B2 (en) 2020-10-29 2023-04-11 Lumileds Llc Light emitting diode device with tunable emission
US12040432B2 (en) 2020-10-30 2024-07-16 Lumileds Llc Light emitting diode devices with patterned TCO layer including different thicknesses
US11631786B2 (en) 2020-11-12 2023-04-18 Lumileds Llc III-nitride multi-wavelength LED arrays with etch stop layer
US11705534B2 (en) 2020-12-01 2023-07-18 Lumileds Llc Methods of making flip chip micro light emitting diodes
US11955583B2 (en) 2020-12-01 2024-04-09 Lumileds Llc Flip chip micro light emitting diodes
US11600656B2 (en) 2020-12-14 2023-03-07 Lumileds Llc Light emitting diode device
US11935987B2 (en) 2021-11-03 2024-03-19 Lumileds Llc Light emitting diode arrays with a light-emitting pixel area
EP4261015A4 (de) * 2022-03-03 2024-08-28 Enovate3D Hangzhou Tech Development Co Ltd Druckvorrichtung und verfahren für led-damm einer anzeigetafel
CN115122636A (zh) * 2022-06-20 2022-09-30 深圳锐沣科技有限公司 料槽及三维打印机
US12023865B2 (en) 2022-08-11 2024-07-02 NEXA3D Inc. Light engines for vat polymerization 3D printers

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TWI220578B (en) 2003-09-16 2004-08-21 Opto Tech Corp Light-emitting device capable of increasing light-emitting active region
JP2010205988A (ja) * 2009-03-04 2010-09-16 Panasonic Corp 窒化物半導体素子及びその製造方法
EP2226683A1 (de) * 2009-03-06 2010-09-08 Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO Beleuchtungssystem zur Verwendung in einer stereolithografischen Vorrichtung
US9321281B2 (en) * 2009-03-27 2016-04-26 Electronics For Imaging, Inc. Selective ink cure
DE102011056888A1 (de) 2011-12-22 2013-06-27 Osram Opto Semiconductors Gmbh Anzeigevorrichtung und Verfahren zur Herstellung einer Anzeigevorrichtung
DE102012103393A1 (de) 2012-04-18 2013-10-24 Osram Opto Semiconductors Gmbh Transparenter Körper, optoelektronisches Bauelement mit einem transparenten Körper und Verfahren zur Herstellung eines transparenten Körpers
US9232569B2 (en) * 2013-02-27 2016-01-05 Applied Materials, Inc. Solid state light source assisted processing
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EP3083254B1 (de) 2013-12-17 2019-06-26 Koninklijke Philips N.V. Laserdrucksystem
FR3019380B1 (fr) * 2014-04-01 2017-09-01 Centre Nat Rech Scient Pixel semiconducteur, matrice de tels pixels, structure semiconductrice pour la realisation de tels pixels et leurs procedes de fabrication
JP6413460B2 (ja) * 2014-08-08 2018-10-31 日亜化学工業株式会社 発光装置及び発光装置の製造方法
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CN107175815B (zh) * 2017-07-13 2020-05-19 上海天马微电子有限公司 一种透射式液晶面板与3d打印装置
KR102407739B1 (ko) * 2017-11-24 2022-06-10 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 반도체 소자
EP3506374A1 (de) * 2017-12-27 2019-07-03 Lg Innotek Co. Ltd Halbleitervorrichtung

Also Published As

Publication number Publication date
US20210154918A1 (en) 2021-05-27
US20180272605A1 (en) 2018-09-27
US10906235B2 (en) 2021-02-02
WO2017045995A1 (de) 2017-03-23
DE112016004248B4 (de) 2021-07-29
US11745415B2 (en) 2023-09-05
DE102015115810A1 (de) 2017-03-23

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