DE112015002477A5 - Elektrische Kontaktstruktur für ein Halbleiterbauelement und Halbleiterbauelement - Google Patents

Elektrische Kontaktstruktur für ein Halbleiterbauelement und Halbleiterbauelement Download PDF

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Publication number
DE112015002477A5
DE112015002477A5 DE112015002477.8T DE112015002477T DE112015002477A5 DE 112015002477 A5 DE112015002477 A5 DE 112015002477A5 DE 112015002477 T DE112015002477 T DE 112015002477T DE 112015002477 A5 DE112015002477 A5 DE 112015002477A5
Authority
DE
Germany
Prior art keywords
semiconductor device
electrical contact
contact structure
semiconductor
electrical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE112015002477.8T
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English (en)
Other versions
DE112015002477B4 (de
Inventor
Korbinian Perzlmaier
Björn Muermann
Karl Engl
Christian Eichinger
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Publication of DE112015002477A5 publication Critical patent/DE112015002477A5/de
Application granted granted Critical
Publication of DE112015002477B4 publication Critical patent/DE112015002477B4/de
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Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/42—Transparent materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/81—Electrodes
    • H10K30/82—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/81—Electrodes
    • H10K30/82—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
    • H10K30/83—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes comprising arrangements for extracting the current from the cell, e.g. metal finger grid systems to reduce the serial resistance of transparent electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H10K50/816—Multilayers, e.g. transparent multilayers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H10K50/828—Transparent cathodes, e.g. comprising thin metal layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Led Devices (AREA)
  • Electroluminescent Light Sources (AREA)
DE112015002477.8T 2014-05-28 2015-05-22 Elektrische Kontaktstruktur für ein Halbleiterbauelement und Halbleiterbauelement Active DE112015002477B4 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102014107555.2A DE102014107555A1 (de) 2014-05-28 2014-05-28 Elektrische Kontaktstruktur für ein Halbleiterbauelement und Halbleiterbauelement
DE102014107555.2 2014-05-28
PCT/EP2015/061387 WO2015181071A1 (de) 2014-05-28 2015-05-22 Elektrische kontaktstruktur für ein halbleiterbauelement und halbleiterbauelement

Publications (2)

Publication Number Publication Date
DE112015002477A5 true DE112015002477A5 (de) 2017-02-16
DE112015002477B4 DE112015002477B4 (de) 2023-07-06

Family

ID=53264665

Family Applications (2)

Application Number Title Priority Date Filing Date
DE102014107555.2A Withdrawn DE102014107555A1 (de) 2014-05-28 2014-05-28 Elektrische Kontaktstruktur für ein Halbleiterbauelement und Halbleiterbauelement
DE112015002477.8T Active DE112015002477B4 (de) 2014-05-28 2015-05-22 Elektrische Kontaktstruktur für ein Halbleiterbauelement und Halbleiterbauelement

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE102014107555.2A Withdrawn DE102014107555A1 (de) 2014-05-28 2014-05-28 Elektrische Kontaktstruktur für ein Halbleiterbauelement und Halbleiterbauelement

Country Status (5)

Country Link
US (1) US9917229B2 (de)
CN (1) CN106415871B (de)
DE (2) DE102014107555A1 (de)
TW (1) TWI567893B (de)
WO (1) WO2015181071A1 (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102018120490A1 (de) * 2018-08-22 2020-02-27 Osram Opto Semiconductors Gmbh Optoelektronisches halbleiterbauelement mit einer halbleiterkontaktschicht und verfahren zur herstellung des optoelektronischen halbleiterbauelements
US20230031274A1 (en) * 2021-07-28 2023-02-02 Nanya Technology Corporation Semiconductor device structure with conductive contacts of different widths and method for preparing the same

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5528071A (en) * 1990-01-18 1996-06-18 Russell; Jimmie L. P-I-N photodiode with transparent conductor n+layer
JP3449535B2 (ja) 1999-04-22 2003-09-22 ソニー株式会社 半導体素子の製造方法
TWI243488B (en) 2003-02-26 2005-11-11 Osram Opto Semiconductors Gmbh Electrical contact-area for optoelectronic semiconductor-chip and its production method
KR100568269B1 (ko) * 2003-06-23 2006-04-05 삼성전기주식회사 플립-칩 본딩용 질화갈륨계 발광 다이오드 및 그 제조방법
EP1897151A4 (de) 2005-06-22 2010-03-10 Seoul Opto Device Co Ltd Leuchtbauelement und verfahren zu seiner herstellung
JP4954549B2 (ja) * 2005-12-29 2012-06-20 ローム株式会社 半導体発光素子およびその製法
DE102006015788A1 (de) * 2006-01-27 2007-09-13 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip
US7982127B2 (en) * 2006-12-29 2011-07-19 Industrial Technology Research Institute Thin film solar cell module of see-through type
CN102124574B (zh) * 2008-06-16 2013-07-17 丰田合成株式会社 半导体发光元件、其电极及制造方法以及灯
JP5325506B2 (ja) 2008-09-03 2013-10-23 株式会社東芝 半導体発光素子及びその製造方法
TWI375338B (en) * 2008-11-27 2012-10-21 Epistar Corp Opto-electronic device
JP5195798B2 (ja) * 2010-03-23 2013-05-15 豊田合成株式会社 半導体発光素子の製造方法
KR101154709B1 (ko) * 2010-07-28 2012-06-08 엘지이노텍 주식회사 발광 소자, 발광 소자 제조방법, 발광 소자 패키지 및 조명 시스템
JP2012186199A (ja) * 2011-03-03 2012-09-27 Toshiba Corp 半導体発光装置およびその製造方法
JP5857786B2 (ja) 2012-02-21 2016-02-10 日亜化学工業株式会社 半導体発光素子の製造方法
DE102012106364B4 (de) * 2012-07-16 2021-09-09 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips

Also Published As

Publication number Publication date
US9917229B2 (en) 2018-03-13
CN106415871A (zh) 2017-02-15
CN106415871B (zh) 2018-12-07
TWI567893B (zh) 2017-01-21
WO2015181071A1 (de) 2015-12-03
DE112015002477B4 (de) 2023-07-06
TW201611217A (zh) 2016-03-16
DE102014107555A1 (de) 2015-12-03
US20170200860A1 (en) 2017-07-13

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