DE112014002167A5 - Halbleiterbauelement mit einer Zwischenschicht - Google Patents

Halbleiterbauelement mit einer Zwischenschicht Download PDF

Info

Publication number
DE112014002167A5
DE112014002167A5 DE112014002167.9T DE112014002167T DE112014002167A5 DE 112014002167 A5 DE112014002167 A5 DE 112014002167A5 DE 112014002167 T DE112014002167 T DE 112014002167T DE 112014002167 A5 DE112014002167 A5 DE 112014002167A5
Authority
DE
Germany
Prior art keywords
semiconductor device
intermediate layer
layer
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE112014002167.9T
Other languages
English (en)
Inventor
Matthias Peter
Tobias Meyer
Jürgen Off
Alexander Walter
Tobias Gotschke
Christian Leirer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Publication of DE112014002167A5 publication Critical patent/DE112014002167A5/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
    • H01L33/325—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen characterised by the doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation
    • H01L33/002—Devices characterised by their operation having heterojunctions or graded gap
    • H01L33/0025—Devices characterised by their operation having heterojunctions or graded gap comprising only AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/025—Physical imperfections, e.g. particular concentration or distribution of impurities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
DE112014002167.9T 2013-04-25 2014-04-17 Halbleiterbauelement mit einer Zwischenschicht Withdrawn DE112014002167A5 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102013104192.2 2013-04-25
DE102013104192.2A DE102013104192A1 (de) 2013-04-25 2013-04-25 Halbleiterbauelement mit einer Zwischenschicht
PCT/EP2014/057947 WO2014173825A1 (de) 2013-04-25 2014-04-17 Halbleiterbauelement mit einer zwischenschicht

Publications (1)

Publication Number Publication Date
DE112014002167A5 true DE112014002167A5 (de) 2016-01-07

Family

ID=50549310

Family Applications (2)

Application Number Title Priority Date Filing Date
DE102013104192.2A Withdrawn DE102013104192A1 (de) 2013-04-25 2013-04-25 Halbleiterbauelement mit einer Zwischenschicht
DE112014002167.9T Withdrawn DE112014002167A5 (de) 2013-04-25 2014-04-17 Halbleiterbauelement mit einer Zwischenschicht

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE102013104192.2A Withdrawn DE102013104192A1 (de) 2013-04-25 2013-04-25 Halbleiterbauelement mit einer Zwischenschicht

Country Status (4)

Country Link
US (1) US9761758B2 (de)
JP (1) JP2016521005A (de)
DE (2) DE102013104192A1 (de)
WO (1) WO2014173825A1 (de)

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5740192A (en) * 1994-12-19 1998-04-14 Kabushiki Kaisha Toshiba Semiconductor laser
US5903017A (en) * 1996-02-26 1999-05-11 Kabushiki Kaisha Toshiba Compound semiconductor device formed of nitrogen-containing gallium compound such as GaN, AlGaN or InGaN
US6515313B1 (en) * 1999-12-02 2003-02-04 Cree Lighting Company High efficiency light emitters with reduced polarization-induced charges
JP3384782B2 (ja) * 2000-03-16 2003-03-10 三洋電機株式会社 窒化物系半導体素子およびその製造方法
JP2005235912A (ja) * 2004-02-18 2005-09-02 Osaka Gas Co Ltd ＧａＮ系化合物半導体受光素子
KR100665364B1 (ko) * 2005-12-28 2007-01-09 삼성전기주식회사 질화물 반도체 발광 소자
US7842963B2 (en) * 2006-10-18 2010-11-30 Koninklijke Philips Electronics N.V. Electrical contacts for a semiconductor light emitting apparatus
DE102008028345A1 (de) * 2008-06-13 2009-12-17 Osram Opto Semiconductors Gmbh Halbleiterkörper und Verfahren zur Herstellung eines Halbleiterkörpers
KR101662037B1 (ko) * 2009-12-02 2016-10-05 삼성전자 주식회사 발광 소자 및 그 제조 방법
DE102009060749B4 (de) * 2009-12-30 2021-12-30 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterchip

Also Published As

Publication number Publication date
US20160079476A1 (en) 2016-03-17
JP2016521005A (ja) 2016-07-14
WO2014173825A1 (de) 2014-10-30
US9761758B2 (en) 2017-09-12
DE102013104192A1 (de) 2014-10-30

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Legal Events

Date Code Title Description
R012 Request for examination validly filed
R079 Amendment of ipc main class

Free format text: PREVIOUS MAIN CLASS: H01L0033020000

Ipc: H01L0033320000

R119 Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee