DE112010002029T8 - Filmbildungsverfahren und Filmbildungsvorrichtung - Google Patents

Filmbildungsverfahren und Filmbildungsvorrichtung Download PDF

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Publication number
DE112010002029T8
DE112010002029T8 DE112010002029T DE112010002029T DE112010002029T8 DE 112010002029 T8 DE112010002029 T8 DE 112010002029T8 DE 112010002029 T DE112010002029 T DE 112010002029T DE 112010002029 T DE112010002029 T DE 112010002029T DE 112010002029 T8 DE112010002029 T8 DE 112010002029T8
Authority
DE
Germany
Prior art keywords
film forming
forming apparatus
forming method
film
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
DE112010002029T
Other languages
English (en)
Other versions
DE112010002029T5 (de
Inventor
Kazumasa Horita
Naoki Morimoto
Junichi Hamaguchi
Naoki Takeda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ulvac Inc
Original Assignee
Ulvac Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ulvac Inc filed Critical Ulvac Inc
Publication of DE112010002029T5 publication Critical patent/DE112010002029T5/de
Application granted granted Critical
Publication of DE112010002029T8 publication Critical patent/DE112010002029T8/de
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System
    • H01L21/2855—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System by physical means, e.g. sputtering, evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/351—Sputtering by application of a magnetic field, e.g. magnetron sputtering using a magnetic field in close vicinity to the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/342—Hollow targets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
DE112010002029T 2009-05-20 2010-05-20 Filmbildungsverfahren und Filmbildungsvorrichtung Ceased DE112010002029T8 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2009-121894 2009-05-20
JP2009121894 2009-05-20
PCT/JP2010/003406 WO2010134346A1 (ja) 2009-05-20 2010-05-20 成膜方法及び成膜装置

Publications (2)

Publication Number Publication Date
DE112010002029T5 DE112010002029T5 (de) 2012-08-02
DE112010002029T8 true DE112010002029T8 (de) 2012-10-11

Family

ID=43126037

Family Applications (1)

Application Number Title Priority Date Filing Date
DE112010002029T Ceased DE112010002029T8 (de) 2009-05-20 2010-05-20 Filmbildungsverfahren und Filmbildungsvorrichtung

Country Status (8)

Country Link
US (1) US20120118725A1 (de)
JP (1) JP5417437B2 (de)
KR (1) KR101344085B1 (de)
CN (1) CN102428209A (de)
DE (1) DE112010002029T8 (de)
SG (1) SG176182A1 (de)
TW (1) TWI464285B (de)
WO (1) WO2010134346A1 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012070195A1 (ja) * 2010-11-24 2012-05-31 株式会社アルバック スパッタリング方法
JP2013001965A (ja) * 2011-06-16 2013-01-07 Ulvac Japan Ltd スパッタリング方法
TWI565527B (zh) * 2011-12-26 2017-01-11 鴻海精密工業股份有限公司 電漿成膜裝置
US9576810B2 (en) * 2013-10-03 2017-02-21 Applied Materials, Inc. Process for etching metal using a combination of plasma and solid state sources
KR102502558B1 (ko) * 2018-08-10 2023-02-23 가부시키가이샤 아루박 스패터링 장치
KR102611646B1 (ko) * 2018-08-27 2023-12-11 가부시키가이샤 알박 스퍼터링 장치 및 성막 방법
JP7202815B2 (ja) * 2018-08-31 2023-01-12 キヤノントッキ株式会社 成膜装置、成膜方法、および電子デバイスの製造方法
CN110777345A (zh) * 2019-11-28 2020-02-11 湖南华庆科技有限公司 一种磁控光学镀膜设备

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61246368A (ja) * 1985-04-24 1986-11-01 Nec Corp 金属膜の堆積方法
JP3094050B2 (ja) * 1992-12-09 2000-10-03 東京エレクトロン株式会社 マグネトロンスパッタリング装置及びスパッタリングガン
JP3233496B2 (ja) 1993-04-14 2001-11-26 株式会社アルバック 真空成膜装置
JP3775689B2 (ja) * 1997-04-21 2006-05-17 トーキョー エレクトロン アリゾナ インコーポレイテッド 材料をイオン化スパッタリングする方法と装置
JP5026631B2 (ja) * 1999-06-24 2012-09-12 株式会社アルバック スパッタリング装置
US6352629B1 (en) * 2000-07-10 2002-03-05 Applied Materials, Inc. Coaxial electromagnet in a magnetron sputtering reactor
JP4073657B2 (ja) 2001-11-21 2008-04-09 株式会社アルバック 処理方法
US7527713B2 (en) * 2004-05-26 2009-05-05 Applied Materials, Inc. Variable quadruple electromagnet array in plasma processing
KR101006057B1 (ko) * 2006-01-25 2011-01-06 울박, 인크 스퍼터링 장치 및 성막 방법
JP2008047661A (ja) 2006-08-14 2008-02-28 Seiko Epson Corp 成膜装置及び半導体装置の製造方法
JP2008251579A (ja) 2007-03-29 2008-10-16 Matsushita Electric Ind Co Ltd 静電チャックおよび半導体装置の製造方法
JP2009121894A (ja) 2007-11-14 2009-06-04 Fujitsu Ltd 導電体パターンの欠陥検査方法及び欠陥検査装置

Also Published As

Publication number Publication date
TW201107511A (en) 2011-03-01
KR101344085B1 (ko) 2013-12-24
KR20120023035A (ko) 2012-03-12
SG176182A1 (en) 2011-12-29
US20120118725A1 (en) 2012-05-17
JP5417437B2 (ja) 2014-02-12
CN102428209A (zh) 2012-04-25
JPWO2010134346A1 (ja) 2012-11-08
WO2010134346A1 (ja) 2010-11-25
DE112010002029T5 (de) 2012-08-02
TWI464285B (zh) 2014-12-11

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R012 Request for examination validly filed
R079 Amendment of ipc main class

Free format text: PREVIOUS MAIN CLASS: C23C0014340000

Ipc: C23C0014350000

R079 Amendment of ipc main class

Free format text: PREVIOUS MAIN CLASS: C23C0014340000

Ipc: C23C0014350000

Effective date: 20130222

R002 Refusal decision in examination/registration proceedings
R003 Refusal decision now final

Effective date: 20131119