DE112009003766T8 - Sputter-Vorrichtung und Sputter-Verfahren - Google Patents

Sputter-Vorrichtung und Sputter-Verfahren Download PDF

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Publication number
DE112009003766T8
DE112009003766T8 DE112009003766T DE112009003766T DE112009003766T8 DE 112009003766 T8 DE112009003766 T8 DE 112009003766T8 DE 112009003766 T DE112009003766 T DE 112009003766T DE 112009003766 T DE112009003766 T DE 112009003766T DE 112009003766 T8 DE112009003766 T8 DE 112009003766T8
Authority
DE
Germany
Prior art keywords
sputtering
sputtering method
sputtering device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
DE112009003766T
Other languages
English (en)
Other versions
DE112009003766T5 (de
Inventor
Naoki Morimoto
Junichi Hamaguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ulvac Inc
Original Assignee
Ulvac Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ulvac Inc filed Critical Ulvac Inc
Publication of DE112009003766T5 publication Critical patent/DE112009003766T5/de
Application granted granted Critical
Publication of DE112009003766T8 publication Critical patent/DE112009003766T8/de
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/046—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/351—Sputtering by application of a magnetic field, e.g. magnetron sputtering using a magnetic field in close vicinity to the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/354—Introduction of auxiliary energy into the plasma
    • C23C14/358—Inductive energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3447—Collimators, shutters, apertures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
    • H01J37/3452—Magnet distribution
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
    • H01J37/3458—Electromagnets in particular for cathodic sputtering apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/2855—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by physical means, e.g. sputtering, evaporation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Physical Vapour Deposition (AREA)
DE112009003766T 2008-12-15 2009-12-08 Sputter-Vorrichtung und Sputter-Verfahren Ceased DE112009003766T8 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2008-318990 2008-12-15
JP2008318990 2008-12-15
PCT/JP2009/006699 WO2010070845A1 (ja) 2008-12-15 2009-12-08 スパッタリング装置及びスパッタリング方法

Publications (2)

Publication Number Publication Date
DE112009003766T5 DE112009003766T5 (de) 2012-10-04
DE112009003766T8 true DE112009003766T8 (de) 2012-10-25

Family

ID=42268527

Family Applications (1)

Application Number Title Priority Date Filing Date
DE112009003766T Ceased DE112009003766T8 (de) 2008-12-15 2009-12-08 Sputter-Vorrichtung und Sputter-Verfahren

Country Status (8)

Country Link
US (1) US8834685B2 (de)
JP (1) JP5550565B2 (de)
KR (1) KR101593544B1 (de)
CN (1) CN102245798A (de)
DE (1) DE112009003766T8 (de)
SG (1) SG171398A1 (de)
TW (1) TWI490929B (de)
WO (1) WO2010070845A1 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI485277B (zh) * 2013-12-13 2015-05-21 Univ Minghsin Sci & Tech 多靶反應性濺鍍製程穩定控制方法
WO2016136255A1 (ja) * 2015-02-25 2016-09-01 株式会社アルバック 成膜装置及び成膜方法
GB201505578D0 (en) * 2015-03-31 2015-05-13 Spts Technologies Ltd Method and apparatus for depositing a material
CN106637103B (zh) * 2016-10-12 2019-04-05 南京华东电子信息科技股份有限公司 一种igzo成膜设备的阳极稳定装置
CN108456860B (zh) * 2017-02-22 2020-12-08 北京北方华创微电子装备有限公司 一种沉积腔室和膜层沉积装置
WO2018185987A1 (ja) * 2017-04-06 2018-10-11 株式会社アルバック イオン源及びイオン注入装置
JP7158098B2 (ja) * 2018-07-31 2022-10-21 キヤノントッキ株式会社 成膜装置、および、電子デバイスの製造方法
CN115404450B (zh) * 2021-05-28 2023-12-05 鑫天虹(厦门)科技有限公司 磁场分布调整装置、沉积设备及其沉积方法

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1154249A (en) 1966-10-12 1969-06-04 Arnex Products Ltd Improvements in or relating to Folding Tables
DE3404880A1 (de) 1984-02-11 1985-08-14 Glyco-Metall-Werke Daelen & Loos Gmbh, 6200 Wiesbaden Verfahren zum herstellen von schichtwerkstoff oder schichtwerkstuecken
JPS6188511A (ja) 1984-10-05 1986-05-06 Nec Kansai Ltd 磁性体薄膜製作方法
JPS61261473A (ja) * 1985-05-15 1986-11-19 Tokuda Seisakusho Ltd スパツタリング装置
JPS6277460A (ja) 1985-09-30 1987-04-09 Tokuda Seisakusho Ltd 放電電極
JPH02175864A (ja) 1988-12-27 1990-07-09 Toshiba Corp 薄膜形成装置およびこれを用いた薄膜形成方法
US5482611A (en) 1991-09-30 1996-01-09 Helmer; John C. Physical vapor deposition employing ion extraction from a plasma
JP3069180B2 (ja) * 1991-11-15 2000-07-24 東京エレクトロン株式会社 中空形状マグネトロンスパッタ電極
JPH07118845A (ja) 1993-10-25 1995-05-09 Asahi Glass Co Ltd マグネトロンスパッタリング装置
US5997699A (en) * 1996-04-08 1999-12-07 Micron Technology Inc. Insitu faceting during deposition
US5976334A (en) * 1997-11-25 1999-11-02 Applied Materials, Inc. Reliable sustained self-sputtering
US5976224A (en) * 1998-05-04 1999-11-02 Durant; James F. Separating carbon from ash
JP5026631B2 (ja) * 1999-06-24 2012-09-12 株式会社アルバック スパッタリング装置
JP4021601B2 (ja) * 1999-10-29 2007-12-12 株式会社東芝 スパッタ装置および成膜方法
JP4703828B2 (ja) 2000-09-07 2011-06-15 株式会社アルバック スパッタリング装置及び薄膜製造方法
TW552624B (en) * 2001-05-04 2003-09-11 Tokyo Electron Ltd Ionized PVD with sequential deposition and etching
US7504006B2 (en) * 2002-08-01 2009-03-17 Applied Materials, Inc. Self-ionized and capacitively-coupled plasma for sputtering and resputtering
JP2005105400A (ja) * 2003-10-02 2005-04-21 Canon Inc 成膜装置、成膜方法、光学素子、及び光学系
JP2006169610A (ja) 2004-12-20 2006-06-29 Matsushita Electric Ind Co Ltd スパッタリング装置
JP2008047661A (ja) 2006-08-14 2008-02-28 Seiko Epson Corp 成膜装置及び半導体装置の製造方法
JP2008167175A (ja) 2006-12-28 2008-07-17 Audio Technica Corp バウンダリーマイクロホン
WO2009157438A1 (ja) 2008-06-26 2009-12-30 株式会社アルバック カソードユニット及びこのカソードユニットを備えたスパッタリング装置

Also Published As

Publication number Publication date
KR20110103950A (ko) 2011-09-21
US20110247928A1 (en) 2011-10-13
TWI490929B (zh) 2015-07-01
KR101593544B1 (ko) 2016-02-15
JP5550565B2 (ja) 2014-07-16
SG171398A1 (en) 2011-07-28
WO2010070845A1 (ja) 2010-06-24
TW201030822A (en) 2010-08-16
CN102245798A (zh) 2011-11-16
US8834685B2 (en) 2014-09-16
DE112009003766T5 (de) 2012-10-04
JPWO2010070845A1 (ja) 2012-05-24

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R082 Change of representative

Representative=s name: EPPING HERMANN FISCHER, PATENTANWALTSGESELLSCH, DE

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R082 Change of representative

Representative=s name: EPPING HERMANN FISCHER, PATENTANWALTSGESELLSCH, DE

Representative=s name: EPPING HERMANN FISCHER PATENTANWALTSGESELLSCHA, DE

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R002 Refusal decision in examination/registration proceedings
R003 Refusal decision now final