DE112006004013A5 - Bolometer und Verfahren zum Herstellen eines Bolometers - Google Patents

Bolometer und Verfahren zum Herstellen eines Bolometers Download PDF

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Publication number
DE112006004013A5
DE112006004013A5 DE112006004013T DE112006004013T DE112006004013A5 DE 112006004013 A5 DE112006004013 A5 DE 112006004013A5 DE 112006004013 T DE112006004013 T DE 112006004013T DE 112006004013 T DE112006004013 T DE 112006004013T DE 112006004013 A5 DE112006004013 A5 DE 112006004013A5
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DE
Germany
Prior art keywords
bolometer
making
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE112006004013T
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English (en)
Other versions
DE112006004013B4 (de
Inventor
Holger Vogt
Marco Russ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fraunhofer Gesellschaft zur Forderung der Angewandten Forschung eV
Original Assignee
Fraunhofer Gesellschaft zur Forderung der Angewandten Forschung eV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Fraunhofer Gesellschaft zur Forderung der Angewandten Forschung eV filed Critical Fraunhofer Gesellschaft zur Forderung der Angewandten Forschung eV
Publication of DE112006004013A5 publication Critical patent/DE112006004013A5/de
Application granted granted Critical
Publication of DE112006004013B4 publication Critical patent/DE112006004013B4/de
Active legal-status Critical Current
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14665—Imagers using a photoconductor layer
    • H01L27/14669—Infrared imagers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/06—Arrangements for eliminating effects of disturbing radiation; Arrangements for compensating changes in sensitivity
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
    • G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
DE112006004013.8T 2006-09-08 2006-09-08 Bolometer und Verfahren zum Herstellen eines Bolometers Active DE112006004013B4 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/EP2006/008790 WO2008028512A1 (de) 2006-09-08 2006-09-08 Bolometer und verfahren zum herstellen eines bolometers

Publications (2)

Publication Number Publication Date
DE112006004013A5 true DE112006004013A5 (de) 2009-06-18
DE112006004013B4 DE112006004013B4 (de) 2014-07-10

Family

ID=37964644

Family Applications (1)

Application Number Title Priority Date Filing Date
DE112006004013.8T Active DE112006004013B4 (de) 2006-09-08 2006-09-08 Bolometer und Verfahren zum Herstellen eines Bolometers

Country Status (4)

Country Link
US (1) US8080797B2 (de)
CN (1) CN101512308B (de)
DE (1) DE112006004013B4 (de)
WO (1) WO2008028512A1 (de)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8486287B2 (en) * 2004-03-19 2013-07-16 The Regents Of The University Of California Methods for fabrication of positional and compositionally controlled nanostructures on substrate
US8043950B2 (en) * 2005-10-26 2011-10-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
EP2015046A1 (de) * 2007-06-06 2009-01-14 Infineon Technologies SensoNor AS Vakuumsensor
DE102008002270A1 (de) * 2008-06-06 2009-12-17 Robert Bosch Gmbh Multispektraler Sensor
FR2941297B1 (fr) * 2009-01-19 2011-02-11 Commissariat Energie Atomique Procede de fabrication d'un detecteur bolometrique
CN102169919B (zh) * 2011-03-17 2016-08-24 上海集成电路研发中心有限公司 探测器及其制造方法
US8545289B2 (en) * 2011-04-13 2013-10-01 Nanya Technology Corporation Distance monitoring device
US9354216B2 (en) * 2011-11-07 2016-05-31 Brian Harold Sutton Infrared aerial thermography for use in determining plant health
US9698281B2 (en) 2012-08-22 2017-07-04 Robert Bosch Gmbh CMOS bolometer
US9368658B2 (en) 2012-08-31 2016-06-14 Robert Bosch Gmbh Serpentine IR sensor
US10234439B2 (en) 2012-11-07 2019-03-19 Airscout Inc. Methods and systems for analyzing a field
US9199838B2 (en) 2013-10-25 2015-12-01 Robert Bosch Gmbh Thermally shorted bolometer
KR101570445B1 (ko) * 2014-02-27 2015-11-20 한국과학기술원 적외선 검출기
US20150362374A1 (en) * 2014-06-16 2015-12-17 The Government Of The United States Of America, As Represented By The Secretary Of The Navy Atomic Layer Deposition of Vanadium Oxide for Microbolometer and Imager
US20160079306A1 (en) * 2014-09-12 2016-03-17 Excelitas Technologies Singapore Pte. Ltd. Surface Micro-Machined Infrared Sensor Using Highly Temperature Stable Interferometric Absorber
US9726547B2 (en) 2014-11-25 2017-08-08 Globalfoundries Inc. Microbolometer devices in CMOS and BiCMOS technologies
DE102015214362A1 (de) 2015-07-29 2017-02-02 Robert Bosch Gmbh Mikroelektromechanische Vorrichtung
DE102015220310A1 (de) 2015-10-19 2017-04-20 Robert Bosch Gmbh Strahlungssensoranordnung und Gasdetektoranordnung
DE102017207967A1 (de) * 2017-05-11 2018-11-15 Robert Bosch Gmbh Mikrobolometer und Verfahren zum Ermitteln einer physikalischen Größe
KR101842955B1 (ko) 2017-09-28 2018-03-29 ㈜시리우스 선택식각 공정을 이용한 마이크로 볼로미터 제조방법 및 이에 따라 제조된 마이크로 볼로미터
CN113614499A (zh) 2019-03-11 2021-11-05 菲力尔商业系统公司 微测热辐射计系统和方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL8300061A (nl) * 1983-01-07 1984-08-01 Stork Amsterdam Inrichting voor het met warmte behandelen van een vloeibaar produkt, alsmede een werkwijze voor het bedrijven en voor het reinigen van een dergelijke inrichting.
US5450053A (en) * 1985-09-30 1995-09-12 Honeywell Inc. Use of vanadium oxide in microbolometer sensors
US5021663B1 (en) * 1988-08-12 1997-07-01 Texas Instruments Inc Infrared detector
EP0354369B1 (de) 1988-08-12 1995-07-26 Texas Instruments Incorporated Infrarot-Detektor
US5688699A (en) * 1996-01-16 1997-11-18 Raytheon Company Microbolometer
FR2752299B1 (fr) * 1996-08-08 1998-09-11 Commissariat Energie Atomique Detecteur infrarouge et procede de fabication de celui-ci
JPH10185681A (ja) * 1996-11-08 1998-07-14 Mitsuteru Kimura 熱型赤外線センサとその製造方法およびこれを用いた赤外線イメージセンサ
JP3597069B2 (ja) * 1999-01-12 2004-12-02 日本電気株式会社 複数の赤外波長帯を検出する熱型赤外アレイセンサ
JP3921320B2 (ja) * 2000-01-31 2007-05-30 日本電気株式会社 熱型赤外線検出器およびその製造方法
US6690014B1 (en) * 2000-04-25 2004-02-10 Raytheon Company Microbolometer and method for forming
AUPQ897600A0 (en) * 2000-07-25 2000-08-17 Liddiard, Kevin Active or self-biasing micro-bolometer infrared detector
US7038623B2 (en) * 2003-12-04 2006-05-02 Raytheon Company Method and apparatus for detecting radiation at one wavelength using a detector for a different wavelength
FR2875298B1 (fr) * 2004-09-16 2007-03-02 Commissariat Energie Atomique Detecteur thermique de rayonnement electromagnetique comportant une membrane absorbante fixee en suspension
US7264983B2 (en) * 2004-11-04 2007-09-04 Unimems Manufacturing Co., Ltd. Method of enhancing connection strength for suspended membrane leads and substrate contacts

Also Published As

Publication number Publication date
CN101512308A (zh) 2009-08-19
WO2008028512A1 (de) 2008-03-13
CN101512308B (zh) 2012-03-28
US20090321644A1 (en) 2009-12-31
US8080797B2 (en) 2011-12-20
DE112006004013B4 (de) 2014-07-10

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R016 Response to examination communication
R016 Response to examination communication
R016 Response to examination communication
R018 Grant decision by examination section/examining division
R020 Patent grant now final