DE10312911A1 - Semiconductor component with space saving rim terminal, with body, two sides and rim, with inner zone and edge zone between inner zone and rim, with first conductivity semiconductor zone in inner and edge zone - Google Patents
Semiconductor component with space saving rim terminal, with body, two sides and rim, with inner zone and edge zone between inner zone and rim, with first conductivity semiconductor zone in inner and edge zone Download PDFInfo
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- DE10312911A1 DE10312911A1 DE10312911A DE10312911A DE10312911A1 DE 10312911 A1 DE10312911 A1 DE 10312911A1 DE 10312911 A DE10312911 A DE 10312911A DE 10312911 A DE10312911 A DE 10312911A DE 10312911 A1 DE10312911 A1 DE 10312911A1
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 226
- 230000002093 peripheral effect Effects 0.000 claims description 11
- 238000009413 insulation Methods 0.000 description 21
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- 230000015556 catabolic process Effects 0.000 description 5
- 230000000903 blocking effect Effects 0.000 description 4
- 230000000295 complement effect Effects 0.000 description 3
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- 238000009792 diffusion process Methods 0.000 description 2
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- 238000012986 modification Methods 0.000 description 2
- 241001354791 Baliga Species 0.000 description 1
- 230000002730 additional effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
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- H—ELECTRICITY
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- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
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- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
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- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/063—Reduced surface field [RESURF] pn-junction structures
- H01L29/0634—Multiple reduced surface field (multi-RESURF) structures, e.g. double RESURF, charge compensation, cool, superjunction (SJ), 3D-RESURF, composite buffer (CB) structures
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7811—Vertical DMOS transistors, i.e. VDMOS transistors with an edge termination structure
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/861—Diodes
- H01L29/8611—Planar PN junction diodes
Abstract
Description
Die vorliegende Erfindung betrifft ein vertikales Halbleiterbauelement gemäß den Merkmalen des Oberbegriffs des Anspruchs 1, das einen Halbleiterkörper mit einer ersten und zweiten Seite und einem Rand, sowie einer Innenzone und einer zwischen der Innenzone und dem Rand angeordneten Randzone aufweist, wobei eine erste Halbleiterzone eines ersten Leitungstyps in der Innenzone und der Randzone und wenigstens eine zweite Halbleiterzone eines zweiten Leitungstyps derart angeordnet ist, dass zwischen der ersten und zweiten Halbleiterzone ein Halbleiterübergang in der Innenzone gebildet ist.The The present invention relates to a vertical semiconductor component according to the characteristics of the preamble of claim 1, comprising a semiconductor body a first and second page and a margin, as well as an inner zone and has an edge zone arranged between the inner zone and the edge, wherein a first semiconductor zone of a first conductivity type in the Inner zone and the peripheral zone and at least a second semiconductor zone a second conduction type is arranged such that between a semiconductor junction in the first and second semiconductor zones is formed in the inner zone.
Eine derartige Bauelementstruktur mit einem Halbleiterübergang in der Innenzone findet sich sowohl bei bipolaren Bauelementen, wie Dioden, Bipolartransistoren und IGBT als auch bei unipolaren Bauelementen, wie MOSFET. Diese Bauelemente unterscheiden sich zwar bezüglich ihres Verhaltens in leitend angesteuertem Zustand, im sperrenden Zustand ist diesen Bauelementen jedoch gemeinsam, dass sich ausgehend von dem sperrend gepolten Halbleiterübergang mit zunehmender Sperrspannung eine Raumladungszone ausbreitet.A such a component structure with a semiconductor junction in the inner zone there is both bipolar devices, like diodes, bipolar transistors and IGBT as well as with unipolar components, like MOSFET. These components differ in terms of their Behavior in a controlled state, in the blocking state however, these components have in common that starting from the reverse polarity semiconductor junction a space charge zone spreads with increasing reverse voltage.
Ohne zusätzliche Maßnahmen ist bei derartigen Bauelementen bekanntlich die Spannungsfestigkeit in der Randzone geringer als in der Innenzone. Um die Spannungsfestigkeit im Randbereich zu erhöhen und dadurch bei Erreichen einer maximalen Sperrspannung einen Spannungsdurchbruch in der flächenmäßig größeren Innenzone zu erreichen sind unterschiedlichste Randabschlüsse bekannt. Bei derartigen Randabschlüssen, die ausführlich in Baliga: "Power Semiconductor Devices", PWS Publishing, 1995, Seiten 81 bis 110, beschrieben sind, unterscheidet man Planare Randabschlüsse, die beispielsweise sogenannte dotierte Feldringe um die Innenzone oder Feldplatten oberhalb der Seiten des Halbleiterkörpers umfassen, und abge schrägte Randabschlüsse, die durch Abschrägen des Randes gebildet sind. Planare und abgeschrägte Abschlüsse können kombiniert werden.Without additional activities is known with such components, the dielectric strength less in the peripheral zone than in the inner zone. To the dielectric strength to increase in the border area and thereby a voltage breakdown when a maximum reverse voltage is reached in the larger inner zone A wide variety of edge closures are known. With such Margin accounts, the detailed in Baliga: "Power Semiconductor Devices ", PWS Publishing, 1995, pages 81 to 110 planar edge closures, the so-called doped field rings around the inner zone, for example or comprise field plates above the sides of the semiconductor body, and bevelled edges, the by chamfering of the edge are formed. Planar and beveled degrees can be combined.
Aufgabe der Randabschlüsse ist es dabei, bei Anliegen einer Sperrspannung die Krümmung des Feldlinienverlaufes im Randbereich zu reduzieren und die auftretenden Feldstärken im Randbereich gegenüber den auftretenden Feldstärken im Innenbereich zu reduzieren. Besonders planare Randabschlüsse, die gegenüber abgeschrägten Abschlüssen den Vorteil besitzen, dass sie mittels herkömmlicher Dotierungs- und Abscheideschritte herstellbar sind, sind allerdings sehr platzaufwendig. Das heißt, sie erfordern zwischen der für aktive Bauelementbereiche genutzten Innenzone und dem Rand eine breite Randzone, wodurch ein nicht unerheblicher Teil der Chipfläche nicht für aktive Bauelementbereiche zur Verfügung steht.task the edge finishes it is the curvature of the Reduce field line course in the edge area and the occurring field strengths opposite in the border area the field strengths that occur to reduce indoors. Particularly planar edge closures that across from bevelled statements have the advantage of using conventional doping and deposition steps can be produced, but are very space-consuming. That means, you require between the for active component areas used inner zone and the edge one wide edge zone, which means that a not inconsiderable part of the chip area is for active Component areas available stands.
Ziel der vorliegenden Erfindung ist es deshalb, ein vertikales Halbleiterbauelement mit einem platzsparenden Randabschluss zur Verfügung zu stellen. Dieses Ziel wird durch Bauelemente gemäß der Merkmale der Ansprüche 1 und 12 erreicht.aim The present invention is therefore a vertical semiconductor device with a space-saving edge finish. That goal is by components according to the characteristics of claims 1 and 12 reached.
Vorteilhafte Ausgestaltungen der Erfindung sind Gegenstand der Unteransprüche.advantageous Embodiments of the invention are the subject of the dependent claims.
Das erfindungsgemäße Halbleiterbauelement umfasst einen Halbleiterkörper mit einer ersten und zweiten Seite und einem Rand, sowie einer Innenzone und einer zwischen der Innenzonen und dem Rand angeordneten Randzone. Der Halbleiterkörper umfasst eine erste Halbleiterzone eines ersten Leitungstyps in der Innenzone und der Randzone sowie wenigstens eine zweite Halbleiterzone eines zweiten Leitungstyps in der Innenzone, wobei zwischen der ersten und zweiten Halbleiterzone ein Halbleiterübergang in der Innenzone gebildet ist.The semiconductor device according to the invention comprises a semiconductor body with a first and second side and a margin, as well as an inner zone and an edge zone arranged between the inner zones and the edge. The semiconductor body comprises a first semiconductor zone of a first conductivity type in the Inner zone and the peripheral zone and at least one second semiconductor zone a second type of conduction in the inner zone, with between the first and second semiconductor zones formed a semiconductor junction in the inner zone is.
In der Randzone umfasst das erfindungsgemäße Halbleiterbauelement wenigstens einen Graben, der sich ausgehend von einer der Seiten in den Halbleiterkörper hinein erstreckt, wobei der Halbleiterkörper in dem Graben mit einer elektrisch isolierenden Schicht bedeckt ist. Außerdem ist wenigstens eine dritte Halbleiterzone des zweiten Leitungstyps, benachbart zu dem Graben in der ersten Halbleiterzone angeordnet.In at least the edge zone comprises the semiconductor component according to the invention a trench that extends from one of the sides into the semiconductor body extends, the semiconductor body covered in the trench with an electrically insulating layer is. Moreover is adjacent to at least a third semiconductor zone of the second conductivity type arranged to the trench in the first semiconductor zone.
Der wenigstens eine Graben mit der Isolationsschicht und der wenigstens einen dritten Zonen bildet einen in lateraler Richtung, also in Richtung von der Innenzone zum Rand, platzsparenden Randabschluss. Bei Anlegen einer Sperrspannung breitet sich bei dem erfindungsgemäßen Halbleiterbauelement eine Raumladungszone ausgehend von der zweiten Halbleiterzone in Richtung des Randes nur bis zu dem Graben mit der Isolationsschicht und dann entlang der Grabenseitenwand mit der wenigstens einen dritten Halbleiterzone aus. Diese wenigstens eine dritte Halbleiterzone umschließt die Innenzone vorzugsweise ringartig und funktioniert nach Art eines Feldringes. Das Vorsehen des mit der Isolationsschicht bedeckten Grabens ermöglicht es – anders als bei bekannten Bauelementen – weiter von der Oberfläche beabstandete Halbleiterzonen des Randbereiches für die Aufnahme der Raumladungszone zu nutzen, wodurch die Abmessungen der Randzone in lateraler Richtung erheblich reduziert werden können.The at least one trench with the insulation layer and the at least one a third zone forms one in the lateral direction, ie in Direction from the inner zone to the edge, space-saving edge finish. When a reverse voltage is applied, the semiconductor component according to the invention spreads a space charge zone starting from the second semiconductor zone in Direction of the edge only up to the trench with the insulation layer and then along the trench sidewall with the at least a third Semiconductor zone. This at least one third semiconductor zone surrounds the inner zone preferably ring-like and works like a Field ring. The provision of that covered with the insulation layer Allows digging it - different than with known components - further from the surface spaced semiconductor zones of the edge region for the admission of the space charge zone to use, thereby reducing the dimensions of the peripheral zone in the lateral direction can be significantly reduced.
Für die spezielle Ausgestaltung des Grabens, die Lage der dritten Halbleiterzone bezüglich des Grabens, sowie für die Anzahl der dritten Halbleiterzonen bestehen eine Vielzahl unterschiedlicher Gestaltungsmöglichkeiten.For the special design of the trench, the position of the third semiconductor zone with respect to the trench, and for the number of the third half lead There are a variety of different design options in the zones.
Diese dritte Halbleiterzone kann wenigstens abschnittsweise unterhalb des Grabens angeordnet sein und/oder an der der Innenzone zugewandten Seite des Grabens in der Randzone angeordnet sein. Bei der einfachsten Ausführungsform ist nur eine dritte Halbleiterzone unterhalb des Grabens oder nur eine dritte Halbleiterzone an der der Innenzone zugewandten Seite des Grabens angeordnet.This third semiconductor zone can at least in sections below of the trench and / or on the side facing the inner zone of the trench in the peripheral zone. With the simplest embodiment is just a third semiconductor zone below the trench or just one third semiconductor zone on the side of the inner zone facing the Trench arranged.
Die wenigstens eine dritte Halbleiterzone befindet sich vorzugsweise unmittelbar unterhalb der Oberfläche des Halbleiterkörpers, ausgehend von der sich der Graben in den Halbleiterkörper hinein erstreckt, kann jedoch auch beabstandet zu dieser Oberfläche angeordnet sein.The at least a third semiconductor zone is preferably located immediately below the surface of the semiconductor body, starting from which the trench extends into the semiconductor body extends, but can also be spaced from this surface his.
Außerdem besteht die Möglichkeit, die wenigstens eine dritte Halbleiterzone an der dem Rand zugewandten Seite des Grabens anzuordnen.There is also the possibility, the at least one third semiconductor zone on the edge facing Arrange side of the trench.
Wie erläutert, können die unterhalb oder seitlich des wenigstens einen Grabens angeordneten dritten Halbleiterzonen beliebig kombiniert werden.How explains can the third arranged below or to the side of the at least one trench Semiconductor zones can be combined as required.
Bei einer Ausführungsform ist vorgesehen, dass der Graben wenigstens in Richtung der Innenzone eine abgestufte Seitenwand mit wenigstens einer Stufe aufweist, wobei eine dritte Halbleiterzone vorzugsweise unterhalb dieser Stufe ausgebildet ist. Bei mehreren Stufen sind dritte Halbleiterzonen vorzugsweise unter allen Stufen des Grabens angeordnet.at one embodiment it is provided that the trench at least in the direction of the inner zone has a stepped side wall with at least one step, a third semiconductor zone preferably below this level is trained. If there are several stages, there are third semiconductor zones preferably arranged under all stages of the trench.
Der wenigstens eine Graben umschließt die Innenzone vorzugsweise ringförmig.The encloses at least one trench the inner zone preferably annular.
Bei einer Ausführungsform sind mehrere beabstandet zueinander angeordnete Gräben um die Innenzone angeordnet, von denen wenigstens einer die Innenzone vorzugsweise ringförmig umschließt.at one embodiment are several trenches spaced apart from one another around the inner zone arranged, of which at least one preferably the inner zone annular encloses.
Der erfindungsgemäße Randabschluss mit einem Graben, in dem eine Isolationsschicht angeordnet ist, und mit der benachbart zu dem Graben angeordneten wenigstens einen Feldringzone ist auf beliebige vertikale Bauelemente anwendbar, die eine Innenzone mit einem pn-Übergang und eine Randzone aufweisen, also beispielsweise auf Dioden, Bipolartransistoren, MOSFET, IGBT oder Thyristoren. Die erste Zone, des ersten Leitungstyps bildet dabei üblicherweise die Driftzone, auf die auf der zu der zweiten Halbleiterzone gegenüberliegenden Seite eine stärker dotierte vierte Halbleiterzone aufgebracht ist. Diese vierte Halbleiterzone ist bei Dioden und MOSFET vom selben Leitungstyps wie die Driftzone und bei IGBT komplementär zu der Driftzone dotiert.The edge closure according to the invention with a trench in which an insulation layer is arranged, and with at least one disposed adjacent to the trench Field ring zone is applicable to any vertical components, which is an inner zone with a pn junction and have an edge zone, for example on diodes, bipolar transistors, MOSFET, IGBT or thyristors. The first zone, the first line type usually forms the drift zone on the one opposite to the second semiconductor zone Side a stronger doped fourth semiconductor zone is applied. This fourth semiconductor zone is of the same conductivity type as the drift zone for diodes and MOSFETs and complementary at IGBT doped to the drift zone.
Bei einer Ausführungsform der Erfindung ist vorgesehen, dass sich der Graben mit der Isolationsschicht in vertikaler Richtung des Halbleiterkörpers bis in diese stärker als die Driftzone dotierte vierte Halbleiterzone erstreckt.at one embodiment the invention provides that the trench with the insulation layer in the vertical direction of the semiconductor body stronger than this the drift zone doped fourth semiconductor zone extends.
Das Bauelement kann insbesondere als Kompensationsbauelement ausgebildet sein, bei dem in ersten Halbleiterzone (der Driftzone) abwechselnd jeweils komplementär dotierte Halbleiterzonen angeordnet sind.The Component can in particular be designed as a compensation component be alternating in the first semiconductor zone (the drift zone) each complementary doped semiconductor zones are arranged.
Das oben genannte Ziel wird weiterhin durch ein Halbleiterbauelement gelöst, das einen Halbleiterkörper umfasst, der eine erste und zweite Seite und einen Rand, sowie eine Innenzone und eine zwischen der Innenzone und dem Rand angeordnete Randzone aufweist und der eine erste Halbleiterzone eines ersten Leitungstyps in der Innenzone und der Randzone und wenigstens eine zweite Halbleiterzone eines zweiten Leitungstyps aufweist, wobei zwischen der ersten und zweiten Halbleiterzone ein Halbleiterübergang in der Innenzone gebildet ist. Dieses Bauelement weist weiterhin eine auf den Rand aufgebrachte elektrisch isolierende Schicht und wenigstens eine in der Randzone angeordnete, sich an den Rand anschließende dritte Halbleiterzone des zweiten Leistungstyps auf.The The above goal is further achieved by a semiconductor device solved, that is a semiconductor body comprises a first and second page and a margin, as well as a Inner zone and an edge zone arranged between the inner zone and the edge and which has a first semiconductor zone of a first conductivity type in the inner zone and the peripheral zone and at least one second semiconductor zone a second conduction type, wherein between the first and second semiconductor zone, a semiconductor junction is formed in the inner zone is. This component also has one applied to the edge electrically insulating layer and at least one in the edge zone arranged third semiconductor zone adjoining the edge of the second type of benefit.
Auch bei diesem Bauelement schließt sich an die erste Halbleiterzone vorzugsweise eine stärker als die erste Halbleiterzone dotierte Schicht des ersten oder zweiten Leitungstyps an, wobei der Rand im Bereich dieser stärker dotierten Zone vorzugsweise eine Stufe aufweist.Also closes with this component the first semiconductor zone preferably a stronger than the first semiconductor zone doped layer of the first or second Conductivity type, with the edge in the area of this heavily doped Zone preferably has a step.
Selbstverständlich kann auch dieses Bauelement als Kompensationsbauelement mit in der Driftzone abwechselnd angeordneten Zonen des ersten und zweiten Leistungstyps ausgebildet sein. Außerdem kann auch dieses Bauelement als Diode, Bipolartransistor, MOSFET oder Thyristor ausgebildet sein.Of course you can also this component as a compensation component with in the drift zone alternately arranged zones of the first and second performance types be trained. Moreover can also use this component as a diode, bipolar transistor, MOSFET or thyristor.
Die vorliegende Erfindung wird nachfolgend in Ausführungsbeispielen anhand von Figuren näher erläutert. In den Figuren zeigtThe The present invention is described below in exemplary embodiments with reference to Figures explained in more detail. In shows the figures
In den Figuren bezeichnen, sofern nicht anders angegeben, gleiche Bezugszeichen gleich Teile und Halbleiterbereiche mit gleicher Bedeutung.In the figures denote the same reference numerals, unless stated otherwise same parts and semiconductor areas with the same meaning.
Die
p-dotierte zweite Halbleiterzone
Das
Bauelement umfasst im Randbereich einen Graben
Anschließend an
den Graben
Der
Graben
Der
Randabschluss mit dem Graben
Bei
Anlegen einer Sperrspannung zwischen dem Anodenanschluss A und dem
Kathodenanschluss K bzw. zwischen der zweiten Halbleiterzone
Zusammenfassend
ist festzuhalten, dass der Graben
Wie
für ein
Ausführungsbeispiel
in dem Querschnitt in
Wenngleich
der erfindungsgemäße Randabschluss
in
Bei
dem Bauelement gemäß
Im
Randbereich
An
die Driftzone
Die
gestrichelte Linie im Randbereich
Der
Graben
Entlang
beider Seiten des Grabens
Der
erfindungsgemäße Randabschluss
mit wenigstens einem sich in den Halbleiterkörper
Das
erfindungsgemäße Randabschlusskonzept
mit einer in vertikaler Richtung eines Halbleiterkörpers verlaufenden
Isolationsschicht und sich einer an die Isolationsschicht anschließenden wenigstens einen
Feldringzone erfordert nicht notwendigerweise einen sich in den
Halbleiterkörper
hinein erstreckenden Graben, wie nachfolgend anhand der Ausführungsbeispiele
in den
- 100100
- HalbleiterkörperSemiconductor body
- 101101
- Vorderseite des Halbleiterkörpersfront of the semiconductor body
- 102102
- Rückseite des Halbleiterkörpersback of the semiconductor body
- 105105
- Randedge
- 103103
- Innenzoneinner zone
- 104104
- Randzoneborder zone
- 4040
- Grabendig
- 50, 5250, 52
- Isolationsmaterialinsulation material
- AA
- Anodenanschlussanode
- KK
- Kathodenanschlusscathode
- SS
- Source-AnschlussSource terminal
- GG
- Gate-AnschlussGate terminal
- DD
- Drain-AnschlussDrain
- 60–6860-68
- FeldringzonenField ring zones
- 2020
- erste Halbleiterzone, Driftzonefirst Semiconductor zone, drift zone
- 3030
- zweite Halbleiterzone, Anodenzonen, Bodyzonesecond Semiconductor zone, anode zones, body zone
- 7070
- vierte Halbleiterzone, Kathodenzone, Drainzonefourth Semiconductor zone, cathode zone, drain zone
- 3535
- fünfte Halbleiterzone, Source-Zonefifth semiconductor zone, Source zone
- 9090
- Gate-ElektrodeGate electrode
- 9292
- Soruce-ElektrodeSoruce electrode
- 105A105A
- vertikaler Randabschnittvertical edge section
- 105B105B
- lateraler Randabschnittlateral edge section
Claims (16)
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