DE10306668B4 - Anordnung zur Erzeugung von intensiver kurzwelliger Strahlung auf Basis eines Plasmas - Google Patents

Anordnung zur Erzeugung von intensiver kurzwelliger Strahlung auf Basis eines Plasmas Download PDF

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Publication number
DE10306668B4
DE10306668B4 DE10306668A DE10306668A DE10306668B4 DE 10306668 B4 DE10306668 B4 DE 10306668B4 DE 10306668 A DE10306668 A DE 10306668A DE 10306668 A DE10306668 A DE 10306668A DE 10306668 B4 DE10306668 B4 DE 10306668B4
Authority
DE
Germany
Prior art keywords
target
arrangement according
openings
beams
nozzle
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE10306668A
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German (de)
English (en)
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DE10306668A1 (de
Inventor
Christian Dr. Ziener
Guido Hergenhan
Kai Dr. Gäbel
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Xtreme Technologies GmbH
Original Assignee
Xtreme Technologies GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Xtreme Technologies GmbH filed Critical Xtreme Technologies GmbH
Priority to DE10306668A priority Critical patent/DE10306668B4/de
Priority to JP2004012104A priority patent/JP2004247293A/ja
Priority to US10/777,616 priority patent/US6995382B2/en
Publication of DE10306668A1 publication Critical patent/DE10306668A1/de
Application granted granted Critical
Publication of DE10306668B4 publication Critical patent/DE10306668B4/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05GX-RAY TECHNIQUE
    • H05G2/00Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001Production of X-ray radiation generated from plasma
    • H05G2/002Supply of the plasma generating material
    • H05G2/0023Constructional details of the ejection system

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • X-Ray Techniques (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Plasma Technology (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
DE10306668A 2003-02-13 2003-02-13 Anordnung zur Erzeugung von intensiver kurzwelliger Strahlung auf Basis eines Plasmas Expired - Fee Related DE10306668B4 (de)

Priority Applications (3)

Application Number Priority Date Filing Date Title
DE10306668A DE10306668B4 (de) 2003-02-13 2003-02-13 Anordnung zur Erzeugung von intensiver kurzwelliger Strahlung auf Basis eines Plasmas
JP2004012104A JP2004247293A (ja) 2003-02-13 2004-01-20 プラズマによる強力短波放射線の発生装置
US10/777,616 US6995382B2 (en) 2003-02-13 2004-02-12 Arrangement for the generation of intensive short-wave radiation based on a plasma

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE10306668A DE10306668B4 (de) 2003-02-13 2003-02-13 Anordnung zur Erzeugung von intensiver kurzwelliger Strahlung auf Basis eines Plasmas

Publications (2)

Publication Number Publication Date
DE10306668A1 DE10306668A1 (de) 2004-08-26
DE10306668B4 true DE10306668B4 (de) 2009-12-10

Family

ID=32747961

Family Applications (1)

Application Number Title Priority Date Filing Date
DE10306668A Expired - Fee Related DE10306668B4 (de) 2003-02-13 2003-02-13 Anordnung zur Erzeugung von intensiver kurzwelliger Strahlung auf Basis eines Plasmas

Country Status (3)

Country Link
US (1) US6995382B2 (enExample)
JP (1) JP2004247293A (enExample)
DE (1) DE10306668B4 (enExample)

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US20060255298A1 (en) * 2005-02-25 2006-11-16 Cymer, Inc. Laser produced plasma EUV light source with pre-pulse
US7928416B2 (en) 2006-12-22 2011-04-19 Cymer, Inc. Laser produced plasma EUV light source
JP2004047517A (ja) * 2002-07-08 2004-02-12 Canon Inc 放射線生成装置、放射線生成方法、露光装置並びに露光方法
DE102004028943B4 (de) * 2004-06-11 2006-10-12 Xtreme Technologies Gmbh Vorrichtung zur zeitlich stabilen Erzeugung von EUV-Strahlung mittels eines laserinduzierten Plasmas
DE102004036441B4 (de) 2004-07-23 2007-07-12 Xtreme Technologies Gmbh Vorrichtung und Verfahren zum Dosieren von Targetmaterial für die Erzeugung kurzwelliger elektromagnetischer Strahlung
CN101002305A (zh) * 2005-01-12 2007-07-18 株式会社尼康 激光等离子euv光源、靶材构件、胶带构件、靶材构件的制造方法、靶材的提供方法以及euv曝光装置
DE102005014433B3 (de) * 2005-03-24 2006-10-05 Xtreme Technologies Gmbh Verfahren und Anordnung zur effizienten Erzeugung von kurzwelliger Strahlung auf Basis eines lasererzeugten Plasmas
SE530094C2 (sv) * 2006-05-11 2008-02-26 Jettec Ab Metod för alstring av röntgenstrålning genom elektronbestrålning av en flytande substans
US7696492B2 (en) * 2006-12-13 2010-04-13 Asml Netherlands B.V. Radiation system and lithographic apparatus
US20090095924A1 (en) * 2007-10-12 2009-04-16 International Business Machines Corporation Electrode design for euv discharge plasma source
NL1036614A1 (nl) * 2008-03-21 2009-09-22 Asml Netherlands Bv A target material, a source, an EUV lithographic apparatus and a device manufacturing method using the same.
JP5722061B2 (ja) * 2010-02-19 2015-05-20 ギガフォトン株式会社 極端紫外光源装置及び極端紫外光の発生方法
US9113540B2 (en) 2010-02-19 2015-08-18 Gigaphoton Inc. System and method for generating extreme ultraviolet light
US9265136B2 (en) 2010-02-19 2016-02-16 Gigaphoton Inc. System and method for generating extreme ultraviolet light
DE102010044875A1 (de) * 2010-09-09 2012-03-15 Limo Patentverwaltung Gmbh & Co. Kg Beleuchtungsvorrichtung zur Erzeugung einer linienförmigen Intensitätsverteilung in einer Arbeitsebene
NL2011533A (en) * 2012-10-31 2014-05-06 Asml Netherlands Bv Method and apparatus for generating radiation.
US9767982B2 (en) * 2013-02-13 2017-09-19 Koninklijke Philips N.V. Multiple X-ray beam tube
CN105511231B (zh) * 2014-10-16 2019-03-29 中芯国际集成电路制造(上海)有限公司 Euv光源和曝光装置
CN105573060B (zh) * 2014-10-16 2017-12-01 中芯国际集成电路制造(上海)有限公司 Euv光源和曝光装置、校准装置和校准方法
CN105573061B (zh) * 2014-10-16 2018-03-06 中芯国际集成电路制造(上海)有限公司 Euv光源和曝光装置
CN105573062B (zh) * 2014-10-17 2018-03-09 中芯国际集成电路制造(上海)有限公司 Euv光源和曝光装置
CN106324997B (zh) * 2015-06-26 2018-03-30 中芯国际集成电路制造(上海)有限公司 Euv光源、曝光装置和一体式旋转结构制作方法
US10338475B2 (en) 2017-11-20 2019-07-02 Taiwan Semiconductor Manufacturing Co., Ltd. Light source for lithography exposure process
US10473599B2 (en) 2017-12-01 2019-11-12 Bruker Axs Gmbh X-ray source using electron impact excitation of high velocity liquid metal beam
US11237483B2 (en) * 2020-06-15 2022-02-01 Taiwan Semiconductor Manufacturing Co., Ltd. Method and apparatus for controlling droplet in extreme ultraviolet light source
CN119781000B (zh) * 2025-03-12 2025-05-23 中国工程物理研究院激光聚变研究中心 一种入射icf靶丸x射线辐射流的原位测量方法及装置

Citations (3)

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US6133577A (en) * 1997-02-04 2000-10-17 Advanced Energy Systems, Inc. Method and apparatus for producing extreme ultra-violet light for use in photolithography
US20020162974A1 (en) * 2001-05-03 2002-11-07 Orsini Rocco A. High temperature EUV source nozzle
EP1367445A1 (en) * 2002-05-31 2003-12-03 Northrop Grumman Corporation Linear filament array sheet for EUV production

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EP0186491B1 (en) 1984-12-26 1992-06-17 Kabushiki Kaisha Toshiba Apparatus for producing soft x-rays using a high energy beam
US4826084A (en) * 1986-09-26 1989-05-02 Wallace Norman R Sheathed jet fluid dispersing apparatus
US5577092A (en) * 1995-01-25 1996-11-19 Kublak; Glenn D. Cluster beam targets for laser plasma extreme ultraviolet and soft x-ray sources
SE510133C2 (sv) 1996-04-25 1999-04-19 Jettec Ab Laser-plasma röntgenkälla utnyttjande vätskor som strålmål
FR2799667B1 (fr) * 1999-10-18 2002-03-08 Commissariat Energie Atomique Procede et dispositif de generation d'un brouillard dense de gouttelettes micrometriques et submicrometriques, application a la generation de lumiere dans l'extreme ultraviolet notamment pour la lithographie
US6469310B1 (en) * 1999-12-17 2002-10-22 Asml Netherlands B.V. Radiation source for extreme ultraviolet radiation, e.g. for use in lithographic projection apparatus
US6661018B1 (en) * 2000-04-25 2003-12-09 Northrop Grumman Corporation Shroud nozzle for gas jet control in an extreme ultraviolet light source
US6711233B2 (en) * 2000-07-28 2004-03-23 Jettec Ab Method and apparatus for generating X-ray or EUV radiation
US6324256B1 (en) * 2000-08-23 2001-11-27 Trw Inc. Liquid sprays as the target for a laser-plasma extreme ultraviolet light source
US6760406B2 (en) * 2000-10-13 2004-07-06 Jettec Ab Method and apparatus for generating X-ray or EUV radiation

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6133577A (en) * 1997-02-04 2000-10-17 Advanced Energy Systems, Inc. Method and apparatus for producing extreme ultra-violet light for use in photolithography
US20020162974A1 (en) * 2001-05-03 2002-11-07 Orsini Rocco A. High temperature EUV source nozzle
EP1367445A1 (en) * 2002-05-31 2003-12-03 Northrop Grumman Corporation Linear filament array sheet for EUV production

Also Published As

Publication number Publication date
US20040159802A1 (en) 2004-08-19
DE10306668A1 (de) 2004-08-26
US6995382B2 (en) 2006-02-07
JP2004247293A (ja) 2004-09-02

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Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
8327 Change in the person/name/address of the patent owner

Owner name: XTREME TECHNOLOGIES GMBH, 37077 GOETTINGEN, DE

8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee