DE10253911A1 - Strahlungsemittierendes Halbleiterbauelement und Verfahren zu dessen Herstellung - Google Patents
Strahlungsemittierendes Halbleiterbauelement und Verfahren zu dessen Herstellung Download PDFInfo
- Publication number
- DE10253911A1 DE10253911A1 DE10253911A DE10253911A DE10253911A1 DE 10253911 A1 DE10253911 A1 DE 10253911A1 DE 10253911 A DE10253911 A DE 10253911A DE 10253911 A DE10253911 A DE 10253911A DE 10253911 A1 DE10253911 A1 DE 10253911A1
- Authority
- DE
- Germany
- Prior art keywords
- substrate
- radiation
- component according
- generating layer
- underside
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 16
- 238000004519 manufacturing process Methods 0.000 title claims description 13
- 238000000034 method Methods 0.000 title claims description 9
- 239000000758 substrate Substances 0.000 claims abstract description 212
- 239000004020 conductor Substances 0.000 claims description 35
- 239000000463 material Substances 0.000 claims description 30
- 230000005855 radiation Effects 0.000 claims description 17
- 229910002601 GaN Inorganic materials 0.000 claims description 13
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 13
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 11
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 11
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 239000004332 silver Substances 0.000 claims description 4
- 230000008901 benefit Effects 0.000 abstract description 16
- 241000763859 Dyckia brevifolia Species 0.000 description 6
- 238000005259 measurement Methods 0.000 description 5
- 238000005476 soldering Methods 0.000 description 5
- 235000012431 wafers Nutrition 0.000 description 5
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000007493 shaping process Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 241001290864 Schoenoplectus Species 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000005094 computer simulation Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 239000000700 radioactive tracer Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000012549 training Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Priority Applications (9)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE10253911A DE10253911A1 (de) | 2002-09-30 | 2002-11-19 | Strahlungsemittierendes Halbleiterbauelement und Verfahren zu dessen Herstellung |
| EP03757682A EP1547164B1 (de) | 2002-09-30 | 2003-09-23 | Strahlungsemittierendes halbleiterbauelement und verfahren zu dessen herstellung |
| US10/529,625 US7592636B2 (en) | 2002-09-30 | 2003-09-23 | Radiation-emitting semiconductor component and method for the production thereof |
| JP2004540498A JP4791731B2 (ja) | 2002-09-30 | 2003-09-23 | 放射放出する半導体構成素子および該半導体構成素子の製造方法 |
| PCT/DE2003/003157 WO2004032248A2 (de) | 2002-09-30 | 2003-09-23 | Strahlungsemittierendes halbleiterbauelement und verfahren zu dessen herstellung |
| CNB038233886A CN100416869C (zh) | 2002-09-30 | 2003-09-23 | 发射射线的半导体器件及其制造方法 |
| DE50310838T DE50310838D1 (de) | 2002-09-30 | 2003-09-23 | Strahlungsemittierendes halbleiterbauelement und verfahren zu dessen herstellung |
| TW092126829A TWI233700B (en) | 2002-09-30 | 2003-09-29 | Radiation-emitting semiconductor component and its production method |
| JP2010125863A JP2010187033A (ja) | 2002-09-30 | 2010-06-01 | 放射放出する半導体構成素子および該半導体構成素子の製造方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE10245634 | 2002-09-30 | ||
| DE10245634.8 | 2002-09-30 | ||
| DE10253911A DE10253911A1 (de) | 2002-09-30 | 2002-11-19 | Strahlungsemittierendes Halbleiterbauelement und Verfahren zu dessen Herstellung |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE10253911A1 true DE10253911A1 (de) | 2004-04-08 |
Family
ID=31984294
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE10253911A Withdrawn DE10253911A1 (de) | 2002-09-30 | 2002-11-19 | Strahlungsemittierendes Halbleiterbauelement und Verfahren zu dessen Herstellung |
| DE50310838T Expired - Lifetime DE50310838D1 (de) | 2002-09-30 | 2003-09-23 | Strahlungsemittierendes halbleiterbauelement und verfahren zu dessen herstellung |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE50310838T Expired - Lifetime DE50310838D1 (de) | 2002-09-30 | 2003-09-23 | Strahlungsemittierendes halbleiterbauelement und verfahren zu dessen herstellung |
Country Status (2)
| Country | Link |
|---|---|
| JP (2) | JP4791731B2 (ja) |
| DE (2) | DE10253911A1 (ja) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1783841A2 (en) * | 2005-07-05 | 2007-05-09 | LG Electronics, Inc. | Light emitting devices and method for fabricating the same |
| US10615324B2 (en) | 2013-06-14 | 2020-04-07 | Cree Huizhou Solid State Lighting Company Limited | Tiny 6 pin side view surface mount LED |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4963839B2 (ja) * | 2006-02-06 | 2012-06-27 | 昭和電工株式会社 | 発光装置 |
| KR100983841B1 (ko) | 2006-02-08 | 2010-09-27 | 쇼와 덴코 가부시키가이샤 | 발광 다이오드 및 그 제조 방법 |
| WO2007091704A1 (en) * | 2006-02-08 | 2007-08-16 | Showa Denko K.K. | Light-emitting diode and fabrication method thereof |
| EP2363896A4 (en) * | 2008-11-28 | 2013-08-28 | Koito Mfg Co Ltd | LIGHT EMITTING MODULE, LIGHT TRANSMITTING MODULE MANUFACTURING METHOD, AND LAMP UNIT |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5087949A (en) * | 1989-06-27 | 1992-02-11 | Hewlett-Packard Company | Light-emitting diode with diagonal faces |
| WO2001061764A1 (de) * | 2000-02-15 | 2001-08-23 | Osram Opto Semiconductors Gmbh | Strahlungsemittierendes halbleiterbauelement, verfahren zu seiner herstellung und strahlungsemittierendes optisches bauelement |
| DE10139798A1 (de) * | 2001-08-14 | 2003-03-13 | Osram Opto Semiconductors Gmbh | Strahlungsemittierendes Bauelement |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05335622A (ja) * | 1992-05-27 | 1993-12-17 | Asahi Chem Ind Co Ltd | 半導体発光装置 |
| JP3326545B2 (ja) * | 1994-09-30 | 2002-09-24 | ローム株式会社 | 半導体発光素子 |
| JP3153727B2 (ja) * | 1995-04-11 | 2001-04-09 | 株式会社リコー | スーパールミネッセントダイオード |
| US7205578B2 (en) * | 2000-02-15 | 2007-04-17 | Osram Gmbh | Semiconductor component which emits radiation, and method for producing the same |
-
2002
- 2002-11-19 DE DE10253911A patent/DE10253911A1/de not_active Withdrawn
-
2003
- 2003-09-23 JP JP2004540498A patent/JP4791731B2/ja not_active Expired - Fee Related
- 2003-09-23 DE DE50310838T patent/DE50310838D1/de not_active Expired - Lifetime
-
2010
- 2010-06-01 JP JP2010125863A patent/JP2010187033A/ja active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5087949A (en) * | 1989-06-27 | 1992-02-11 | Hewlett-Packard Company | Light-emitting diode with diagonal faces |
| WO2001061764A1 (de) * | 2000-02-15 | 2001-08-23 | Osram Opto Semiconductors Gmbh | Strahlungsemittierendes halbleiterbauelement, verfahren zu seiner herstellung und strahlungsemittierendes optisches bauelement |
| DE10139798A1 (de) * | 2001-08-14 | 2003-03-13 | Osram Opto Semiconductors Gmbh | Strahlungsemittierendes Bauelement |
Non-Patent Citations (1)
| Title |
|---|
| JP 62-25472 A (abstract), JPO & Japio, 1987 * |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1783841A2 (en) * | 2005-07-05 | 2007-05-09 | LG Electronics, Inc. | Light emitting devices and method for fabricating the same |
| EP1783841A3 (en) * | 2005-07-05 | 2007-05-23 | LG Electronics, Inc. | Light emitting devices and method for fabricating the same |
| CN100448043C (zh) * | 2005-07-05 | 2008-12-31 | Lg电子株式会社 | 发光器件的制造方法 |
| US10615324B2 (en) | 2013-06-14 | 2020-04-07 | Cree Huizhou Solid State Lighting Company Limited | Tiny 6 pin side view surface mount LED |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2006501656A (ja) | 2006-01-12 |
| JP4791731B2 (ja) | 2011-10-12 |
| DE50310838D1 (de) | 2009-01-08 |
| JP2010187033A (ja) | 2010-08-26 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OP8 | Request for examination as to paragraph 44 patent law | ||
| 8139 | Disposal/non-payment of the annual fee |