DE1021891C2 - Halbleiterdiode fuer Schaltstromkreise - Google Patents

Halbleiterdiode fuer Schaltstromkreise

Info

Publication number
DE1021891C2
DE1021891C2 DE1956W0019922 DEW0019922A DE1021891C2 DE 1021891 C2 DE1021891 C2 DE 1021891C2 DE 1956W0019922 DE1956W0019922 DE 1956W0019922 DE W0019922 A DEW0019922 A DE W0019922A DE 1021891 C2 DE1021891 C2 DE 1021891C2
Authority
DE
Germany
Prior art keywords
zones
current
critical
diode
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE1956W0019922
Other languages
German (de)
English (en)
Other versions
DE1021891B (de
Inventor
William Shockley
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Inc
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of DE1021891B publication Critical patent/DE1021891B/de
Application granted granted Critical
Publication of DE1021891C2 publication Critical patent/DE1021891C2/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04Q—SELECTING
    • H04Q3/00—Selecting arrangements
    • H04Q3/42—Circuit arrangements for indirect selecting controlled by common circuits, e.g. register controller, marker
    • H04Q3/52—Circuit arrangements for indirect selecting controlled by common circuits, e.g. register controller, marker using static devices in switching stages, e.g. electronic switching arrangements
    • H04Q3/521—Circuit arrangements for indirect selecting controlled by common circuits, e.g. register controller, marker using static devices in switching stages, e.g. electronic switching arrangements using semiconductors in the switching stages
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/70—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices having only two electrodes and exhibiting negative resistance
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/80—PNPN diodes, e.g. Shockley diodes or break-over diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/26—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having three or more potential barriers, e.g. photothyristors
    • H10F30/263—Photothyristors

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Thyristors (AREA)
  • Photovoltaic Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE1956W0019922 1955-11-22 1956-10-16 Halbleiterdiode fuer Schaltstromkreise Expired DE1021891C2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US548330A US2855524A (en) 1955-11-22 1955-11-22 Semiconductive switch

Publications (2)

Publication Number Publication Date
DE1021891B DE1021891B (de) 1958-01-02
DE1021891C2 true DE1021891C2 (de) 1958-06-12

Family

ID=24188389

Family Applications (1)

Application Number Title Priority Date Filing Date
DE1956W0019922 Expired DE1021891C2 (de) 1955-11-22 1956-10-16 Halbleiterdiode fuer Schaltstromkreise

Country Status (7)

Country Link
US (1) US2855524A (OSRAM)
BE (1) BE551952A (OSRAM)
CH (1) CH349299A (OSRAM)
DE (1) DE1021891C2 (OSRAM)
FR (1) FR1157540A (OSRAM)
GB (1) GB813862A (OSRAM)
NL (1) NL99632C (OSRAM)

Families Citing this family (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3141119A (en) * 1957-03-28 1964-07-14 Westinghouse Electric Corp Hyperconductive transistor switches
US2980810A (en) * 1957-12-30 1961-04-18 Bell Telephone Labor Inc Two-terminal semiconductive switch having five successive zones
DE1072714B (de) * 1958-02-13 1960-01-07 Westinghouse Electric Corporation, East Pittsburgh, Pa. (V. St. A.) Stromversorgungsschutzschaltung
US3027427A (en) * 1958-06-06 1962-03-27 Bell Telephone Labor Inc Electronic switching network
NL240386A (OSRAM) * 1958-06-25 1900-01-01
NL240820A (OSRAM) * 1958-07-03
NL241053A (OSRAM) * 1958-07-10
DE1142411B (de) * 1958-08-08 1963-01-17 Siemens Ag Einrichtung zur Umformung von Wechselstrom konstanter Frequenz in solchen veraenderbarer Frequenz und gegebenenfalls anderer Phasenzahl
NL246349A (OSRAM) * 1958-12-15
US2997604A (en) * 1959-01-14 1961-08-22 Shockley William Semiconductive device and method of operating same
NL248703A (OSRAM) * 1959-02-24
DE1104071B (de) * 1959-04-04 1961-04-06 Siemens Ag Vierschichten-Halbleiteranordnung mit einkristallinem Halbleiterkoerper und drei hintereinandergeschalteten pn-UEbergaengen mit abwechselnd entgegengesetzter Sperrichtung und Verfahren zu ihrer Herstellung
US3089998A (en) * 1959-04-15 1963-05-14 Westinghouse Electric Corp Regulator system
DE1121693B (de) * 1959-05-28 1962-01-11 Licentai Patent Verwaltungs G Anordnung zum Steuern eines elektrisch steuerbaren Schalters
BE590420A (OSRAM) * 1959-06-04
DE1164575B (de) 1959-06-17 1964-03-05 Western Electric Co Schaltendes Halbleiterbauelement mit mindestens vier Zonen abwechselnden Leitfaehigkeitstyps
NL251532A (OSRAM) * 1959-06-17
US3093813A (en) * 1959-08-26 1963-06-11 Ferumeldewerk Arnstadt Veb Electronic switch
US3040270A (en) * 1959-09-01 1962-06-19 Gen Electric Silicon controlled rectifier circuit including a variable frequency oscillator
GB910459A (en) * 1959-10-02 1962-11-14 Standard Telephones Cables Ltd Improvements in or relating to automatic telecommunication exchanges
US3160828A (en) * 1960-01-25 1964-12-08 Westinghouse Electric Corp Radiation sensitive semiconductor oscillating device
BE628335A (OSRAM) * 1960-03-23 1900-01-01
NL129185C (OSRAM) * 1960-06-10
US3173091A (en) * 1960-08-30 1965-03-09 Westinghouse Electric Corp Microwave detector apparatus
NL268951A (OSRAM) * 1960-09-07
US3254267A (en) * 1960-10-25 1966-05-31 Westinghouse Electric Corp Semiconductor-controlled, direct current responsive electroluminescent phosphors
GB945374A (en) 1960-11-04 1963-12-23 Ass Elect Ind Improvements relating to switching systems employing co-ordinate switching arrangements of the cross-point type
DE1159096B (de) * 1960-12-05 1963-12-12 Fairchild Camera Instr Co Vierzonen-Halbleiterbauelement, insbesondere Transistor, zum Schalten mit einem pnpn-Halbleiterkoerper
NL272752A (OSRAM) * 1960-12-20
US3171040A (en) * 1961-01-16 1965-02-23 Gen Dynamics Corp Fast charging circuit for pulse networks
US3193700A (en) * 1961-02-23 1965-07-06 Fairbanks Morse Inc Ramp generator circuit employing two capacitors, one including means for rapid discharging thereof
US3177375A (en) * 1961-03-27 1965-04-06 Electro Mechanical Res Inc Time-of-occurrence markers
US3135875A (en) * 1961-05-04 1964-06-02 Ibm Ring counter employing four-layer diodes and scaling resistors to effect counting
US3109109A (en) * 1961-08-29 1963-10-29 Bell Telephone Labor Inc Circuit employing negative resistance asymmetrically conducting devices connected inseries randomly or sequentially switched
US3248616A (en) * 1962-03-08 1966-04-26 Westinghouse Electric Corp Monolithic bistable flip-flop
US3221106A (en) * 1962-03-22 1965-11-30 Itt Speech path controller
US3193739A (en) * 1962-05-15 1965-07-06 Siemens Ag Semiconductor device having four-layer components for obtaining negative current-voltage characteristics
US3223978A (en) * 1962-06-08 1965-12-14 Radiation Inc End marking switch matrix utilizing negative impedance crosspoints
US3278687A (en) * 1963-07-19 1966-10-11 Stromberg Carlson Corp Four-layer diode network for identifying parties on a telephone line
DE1231296C2 (de) * 1964-03-19 1974-03-28 Elektronische schaltanordnung mit mindestens zwei zweipoligen halbleiterschaltelementen
DK114912B (da) * 1964-07-15 1969-08-18 R Relsted Vælgerkobling med lysimpulsstyring til anvendelse i automatiske koblingsanlæg samt vælger og koblingsanlæg opbygget med den nævnte vælgerkobling.
US3410966A (en) * 1965-05-27 1968-11-12 Bell Telephone Labor Inc System for remote testing of telephone subscribers' lines
US3454434A (en) * 1966-05-09 1969-07-08 Motorola Inc Multilayer semiconductor device

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2588254A (en) * 1950-05-09 1952-03-04 Purdue Research Foundation Photoelectric and thermoelectric device utilizing semiconducting material
DE1048359B (OSRAM) * 1952-07-22

Also Published As

Publication number Publication date
CH349299A (de) 1960-10-15
FR1157540A (fr) 1958-05-30
US2855524A (en) 1958-10-07
DE1021891B (de) 1958-01-02
GB813862A (en) 1959-05-27
NL99632C (OSRAM)
BE551952A (OSRAM)

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