DE10217374A1 - Vielzahl von Halbleiterscheiben aus Silicium und Verfahren zu ihrer Herstellung - Google Patents
Vielzahl von Halbleiterscheiben aus Silicium und Verfahren zu ihrer HerstellungInfo
- Publication number
- DE10217374A1 DE10217374A1 DE2002117374 DE10217374A DE10217374A1 DE 10217374 A1 DE10217374 A1 DE 10217374A1 DE 2002117374 DE2002117374 DE 2002117374 DE 10217374 A DE10217374 A DE 10217374A DE 10217374 A1 DE10217374 A1 DE 10217374A1
- Authority
- DE
- Germany
- Prior art keywords
- silicon
- polishing
- wafers
- max
- sides
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 238000005498 polishing Methods 0.000 title claims abstract description 141
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 139
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 135
- 239000010703 silicon Substances 0.000 title claims abstract description 135
- 235000012431 wafers Nutrition 0.000 title claims abstract description 115
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 21
- 239000004065 semiconductor Substances 0.000 title claims abstract description 17
- 239000013078 crystal Substances 0.000 title claims abstract description 13
- 238000000034 method Methods 0.000 claims abstract description 58
- 239000004744 fabric Substances 0.000 claims abstract description 35
- 230000008569 process Effects 0.000 claims abstract description 28
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 22
- 239000003082 abrasive agent Substances 0.000 claims abstract description 12
- 239000011148 porous material Substances 0.000 claims abstract description 10
- 229920002635 polyurethane Polymers 0.000 claims abstract description 7
- 239000004814 polyurethane Substances 0.000 claims abstract description 7
- 239000000084 colloidal system Substances 0.000 claims abstract description 6
- 238000000227 grinding Methods 0.000 claims description 28
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 13
- 238000000576 coating method Methods 0.000 claims description 11
- 239000011248 coating agent Substances 0.000 claims description 10
- 238000000151 deposition Methods 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims description 3
- 239000011159 matrix material Substances 0.000 claims description 3
- 239000007787 solid Substances 0.000 claims description 3
- 238000003754 machining Methods 0.000 claims description 2
- 238000003631 wet chemical etching Methods 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 18
- 230000000052 comparative effect Effects 0.000 description 17
- 238000012545 processing Methods 0.000 description 7
- 238000005530 etching Methods 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- 238000007792 addition Methods 0.000 description 5
- 239000000919 ceramic Substances 0.000 description 5
- 239000007788 liquid Substances 0.000 description 5
- 238000005259 measurement Methods 0.000 description 5
- 238000007517 polishing process Methods 0.000 description 5
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000012790 adhesive layer Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 230000003746 surface roughness Effects 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 3
- 238000005299 abrasion Methods 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 3
- 239000010432 diamond Substances 0.000 description 3
- 229920000728 polyester Polymers 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- 239000007858 starting material Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 229910000669 Chrome steel Inorganic materials 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- 229920005830 Polyurethane Foam Polymers 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 2
- 230000002378 acidificating effect Effects 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 230000002146 bilateral effect Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000004049 embossing Methods 0.000 description 2
- 238000007731 hot pressing Methods 0.000 description 2
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 2
- 238000010330 laser marking Methods 0.000 description 2
- 238000003801 milling Methods 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000011496 polyurethane foam Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000006748 scratching Methods 0.000 description 2
- 230000002393 scratching effect Effects 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000010959 steel Substances 0.000 description 2
- 239000004094 surface-active agent Substances 0.000 description 2
- 239000000725 suspension Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910000906 Bronze Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910001018 Cast iron Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- 239000010974 bronze Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- SLLGVCUQYRMELA-UHFFFAOYSA-N chlorosilicon Chemical compound Cl[Si] SLLGVCUQYRMELA-UHFFFAOYSA-N 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- ZOCHARZZJNPSEU-UHFFFAOYSA-N diboron Chemical compound B#B ZOCHARZZJNPSEU-UHFFFAOYSA-N 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000008092 positive effect Effects 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 230000001846 repelling effect Effects 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 150000004756 silanes Chemical class 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/08—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for double side lapping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2002117374 DE10217374A1 (de) | 2002-04-18 | 2002-04-18 | Vielzahl von Halbleiterscheiben aus Silicium und Verfahren zu ihrer Herstellung |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2002117374 DE10217374A1 (de) | 2002-04-18 | 2002-04-18 | Vielzahl von Halbleiterscheiben aus Silicium und Verfahren zu ihrer Herstellung |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE10217374A1 true DE10217374A1 (de) | 2003-06-18 |
Family
ID=7714386
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2002117374 Ceased DE10217374A1 (de) | 2002-04-18 | 2002-04-18 | Vielzahl von Halbleiterscheiben aus Silicium und Verfahren zu ihrer Herstellung |
Country Status (1)
| Country | Link |
|---|---|
| DE (1) | DE10217374A1 (fr) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102004053308A1 (de) * | 2004-11-04 | 2006-03-23 | Siltronic Ag | Verfahren und Vorrichtung zum gleichzeitigen Schleifen beider Seiten eines scheibenförmigen Werkstücks sowie damit herstellbare Halbleiterscheibe |
| DE102007026292A1 (de) * | 2007-06-06 | 2008-12-11 | Siltronic Ag | Verfahren zur einseitigen Politur nicht strukturierter Halbleiterscheiben |
| CN113169034A (zh) * | 2018-10-22 | 2021-07-23 | 胜高股份有限公司 | 带激光标记的硅晶圆的制造方法及带激光标记的硅晶圆 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10009656A1 (de) * | 2000-02-24 | 2000-12-28 | Wacker Siltronic Halbleitermat | Verfahren zur Herstellung einer Halbleiterscheibe |
| DE10012840A1 (de) * | 2000-03-16 | 2001-04-26 | Wacker Siltronic Halbleitermat | Verfahren zur Herstellung einer Vielzahl von Halbleiterscheiben |
| DE19958077A1 (de) * | 1999-12-02 | 2001-06-13 | Wacker Siltronic Halbleitermat | Verfahren zur beidseitigen Politur von Halbleiterscheiben |
| DE10027103A1 (de) * | 2000-04-13 | 2001-10-25 | Wacker Siltronic Halbleitermat | Verfahren zur Überführung einer Rücklaufscheibe in eine Halbleiterscheibe |
| EP1195798A1 (fr) * | 2000-04-12 | 2002-04-10 | Shin-Etsu Handotai Co., Ltd | Procede de production de tranches de semi-conducteur et tranches ainsi obtenues |
-
2002
- 2002-04-18 DE DE2002117374 patent/DE10217374A1/de not_active Ceased
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19958077A1 (de) * | 1999-12-02 | 2001-06-13 | Wacker Siltronic Halbleitermat | Verfahren zur beidseitigen Politur von Halbleiterscheiben |
| DE10009656A1 (de) * | 2000-02-24 | 2000-12-28 | Wacker Siltronic Halbleitermat | Verfahren zur Herstellung einer Halbleiterscheibe |
| DE10012840A1 (de) * | 2000-03-16 | 2001-04-26 | Wacker Siltronic Halbleitermat | Verfahren zur Herstellung einer Vielzahl von Halbleiterscheiben |
| EP1195798A1 (fr) * | 2000-04-12 | 2002-04-10 | Shin-Etsu Handotai Co., Ltd | Procede de production de tranches de semi-conducteur et tranches ainsi obtenues |
| DE10027103A1 (de) * | 2000-04-13 | 2001-10-25 | Wacker Siltronic Halbleitermat | Verfahren zur Überführung einer Rücklaufscheibe in eine Halbleiterscheibe |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102004053308A1 (de) * | 2004-11-04 | 2006-03-23 | Siltronic Ag | Verfahren und Vorrichtung zum gleichzeitigen Schleifen beider Seiten eines scheibenförmigen Werkstücks sowie damit herstellbare Halbleiterscheibe |
| DE102007026292A1 (de) * | 2007-06-06 | 2008-12-11 | Siltronic Ag | Verfahren zur einseitigen Politur nicht strukturierter Halbleiterscheiben |
| CN113169034A (zh) * | 2018-10-22 | 2021-07-23 | 胜高股份有限公司 | 带激光标记的硅晶圆的制造方法及带激光标记的硅晶圆 |
| CN113169034B (zh) * | 2018-10-22 | 2024-01-30 | 胜高股份有限公司 | 带激光标记的硅晶圆的制造方法 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OAV | Applicant agreed to the publication of the unexamined application as to paragraph 31 lit. 2 z1 | ||
| OP8 | Request for examination as to paragraph 44 patent law | ||
| 8131 | Rejection |