DE102018130859A1 - CVD-Reaktor mit einem von einer Schirmplatten-Anordnung abgedeckten Gaseinlassorgan - Google Patents

CVD-Reaktor mit einem von einer Schirmplatten-Anordnung abgedeckten Gaseinlassorgan Download PDF

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Publication number
DE102018130859A1
DE102018130859A1 DE102018130859.0A DE102018130859A DE102018130859A1 DE 102018130859 A1 DE102018130859 A1 DE 102018130859A1 DE 102018130859 A DE102018130859 A DE 102018130859A DE 102018130859 A1 DE102018130859 A1 DE 102018130859A1
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DE
Germany
Prior art keywords
screen plate
gas
susceptor
cvd reactor
gas inlet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE102018130859.0A
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German (de)
English (en)
Inventor
James O'Dowd
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Aixtron SE
Original Assignee
Aixtron SE
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Aixtron SE filed Critical Aixtron SE
Priority to DE102018130859.0A priority Critical patent/DE102018130859A1/de
Priority to EP19813316.7A priority patent/EP3891320A1/de
Priority to KR1020217020332A priority patent/KR20210096218A/ko
Priority to PCT/EP2019/083227 priority patent/WO2020114933A1/de
Priority to CN201980080267.7A priority patent/CN113166940B/zh
Priority to TW108144137A priority patent/TW202030360A/zh
Publication of DE102018130859A1 publication Critical patent/DE102018130859A1/de
Pending legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45572—Cooled nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/301—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C23C16/303—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
DE102018130859.0A 2018-12-04 2018-12-04 CVD-Reaktor mit einem von einer Schirmplatten-Anordnung abgedeckten Gaseinlassorgan Pending DE102018130859A1 (de)

Priority Applications (6)

Application Number Priority Date Filing Date Title
DE102018130859.0A DE102018130859A1 (de) 2018-12-04 2018-12-04 CVD-Reaktor mit einem von einer Schirmplatten-Anordnung abgedeckten Gaseinlassorgan
EP19813316.7A EP3891320A1 (de) 2018-12-04 2019-12-02 Cvd-reaktor mit einem von einer schirmplatten-anordnung abgedeckten gaseinlassorgan
KR1020217020332A KR20210096218A (ko) 2018-12-04 2019-12-02 차폐 플레이트 어레인지먼트에 의해 덮인 가스 유입 부재를 구비한 cvd-반응기
PCT/EP2019/083227 WO2020114933A1 (de) 2018-12-04 2019-12-02 Cvd-reaktor mit einem von einer schirmplatten-anordnung abgedeckten gaseinlassorgan
CN201980080267.7A CN113166940B (zh) 2018-12-04 2019-12-02 具有被屏蔽板装置遮盖的进气机构的cvd反应器
TW108144137A TW202030360A (zh) 2018-12-04 2019-12-03 具有被罩板裝置覆蓋之氣體入口構件的ｃｖｄ反應器

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102018130859.0A DE102018130859A1 (de) 2018-12-04 2018-12-04 CVD-Reaktor mit einem von einer Schirmplatten-Anordnung abgedeckten Gaseinlassorgan

Publications (1)

Publication Number Publication Date
DE102018130859A1 true DE102018130859A1 (de) 2020-06-04

Family

ID=68762749

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102018130859.0A Pending DE102018130859A1 (de) 2018-12-04 2018-12-04 CVD-Reaktor mit einem von einer Schirmplatten-Anordnung abgedeckten Gaseinlassorgan

Country Status (6)

Country Link
EP (1) EP3891320A1 (zh)
KR (1) KR20210096218A (zh)
CN (1) CN113166940B (zh)
DE (1) DE102018130859A1 (zh)
TW (1) TW202030360A (zh)
WO (1) WO2020114933A1 (zh)

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6565661B1 (en) * 1999-06-04 2003-05-20 Simplus Systems Corporation High flow conductance and high thermal conductance showerhead system and method
DE102006018515A1 (de) * 2006-04-21 2007-10-25 Aixtron Ag CVD-Reaktor mit absenkbarer Prozesskammerdecke
US20080196666A1 (en) * 2007-02-20 2008-08-21 Masato Toshima Shower head and cvd apparatus using the same
US20110290183A1 (en) * 2004-05-12 2011-12-01 Soo Young Choi Plasma Uniformity Control By Gas Diffuser Hole Design
US9587312B2 (en) 2011-07-12 2017-03-07 Aixtron Se Gas inlet member of a CVD reactor
US20170345626A1 (en) * 2016-05-24 2017-11-30 Tokyo Electron Limited Localized Process Control Using A Plasma System
US20170372910A1 (en) * 2016-06-22 2017-12-28 Tokyo Electron Limited Reinforcing structure, vacuum chamber and plasma processing apparatus
US20180171472A1 (en) * 2016-12-15 2018-06-21 Asm Ip Holding B.V. Shower plate structure for exhausting deposition inhibiting gas

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090071403A1 (en) * 2007-09-19 2009-03-19 Soo Young Choi Pecvd process chamber with cooled backing plate
JP4576466B2 (ja) * 2009-03-27 2010-11-10 シャープ株式会社 気相成長装置及び気相成長方法
US9017481B1 (en) * 2011-10-28 2015-04-28 Asm America, Inc. Process feed management for semiconductor substrate processing
CN102492937A (zh) * 2011-12-29 2012-06-13 中国科学院半导体研究所 用于金属化学气相沉积设备反应室的进气喷淋头
DE102012110125A1 (de) * 2012-10-24 2014-04-24 Aixtron Se Vorrichtung zum Behandeln von Substraten mit einer auswechselbaren Deckenplatte sowie Verfahren zum Auswechseln einer derartigen Deckenplatte
US20150348755A1 (en) * 2014-05-29 2015-12-03 Charm Engineering Co., Ltd. Gas distribution apparatus and substrate processing apparatus including same
CN104498904B (zh) * 2014-12-29 2017-04-26 华中科技大学 一种用于mocvd设备的喷淋头

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6565661B1 (en) * 1999-06-04 2003-05-20 Simplus Systems Corporation High flow conductance and high thermal conductance showerhead system and method
US20110290183A1 (en) * 2004-05-12 2011-12-01 Soo Young Choi Plasma Uniformity Control By Gas Diffuser Hole Design
DE102006018515A1 (de) * 2006-04-21 2007-10-25 Aixtron Ag CVD-Reaktor mit absenkbarer Prozesskammerdecke
US20080196666A1 (en) * 2007-02-20 2008-08-21 Masato Toshima Shower head and cvd apparatus using the same
US9587312B2 (en) 2011-07-12 2017-03-07 Aixtron Se Gas inlet member of a CVD reactor
US20170345626A1 (en) * 2016-05-24 2017-11-30 Tokyo Electron Limited Localized Process Control Using A Plasma System
US20170372910A1 (en) * 2016-06-22 2017-12-28 Tokyo Electron Limited Reinforcing structure, vacuum chamber and plasma processing apparatus
US20180171472A1 (en) * 2016-12-15 2018-06-21 Asm Ip Holding B.V. Shower plate structure for exhausting deposition inhibiting gas

Also Published As

Publication number Publication date
EP3891320A1 (de) 2021-10-13
TW202030360A (zh) 2020-08-16
KR20210096218A (ko) 2021-08-04
CN113166940B (zh) 2024-06-04
CN113166940A (zh) 2021-07-23
WO2020114933A1 (de) 2020-06-11

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