DE102017113924A1 - Method for producing an optoelectronic component and optoelectronic component - Google Patents

Abstract

In various exemplary embodiments, a method for producing an optoelectronic component (150) is provided. The method comprises forming on a first side (103a, 203a, 303a, 403a, 803a, 903a, 1003a) of a common substrate (102, 202, 302, 402, 802, 902, 1002) and having a common encapsulation structure (114, 214, 314, 414, 814, 914, 1014) of at least one first optoelectronic component segment (118a, 218a, 318a, 418a, 818a, 918a, 1018a) and one adjacent to the first optoelectronic component segment (118a, 218a, 318a, 418a, 818a, 918a, 1018a), second optoelectronic component segment (118b, 118c, 118d, 218b, 218c, 218d, 318b, 318c, 318d, 418b, 418c, 818b, 818c, 818d, 918b, 918c, 918d, 1018b, 1018c, 1018d). on. The substrate (102, 202, 302, 402, 802, 902, 1002) has a second side (103b, 203b, 303b, 403b, 803b, 903b, 1003b) opposite the first side. Furthermore, the substrate has a plurality of hermetically sealed, electrically conductive vias (104, 204, 304, 404, 804, 904, 1004). The vias (104, 204, 304, 404, 804, 904, 1004) electrically connect the first side (103a, 203a, 303a, 403a, 803a, 903a, 1003a) to the second side (103b, 203b, 303b, respectively), 403b, 803b, 903b, 1003b). Furthermore, the first optoelectronic component segment, the second optoelectronic component segment and the through contacts are formed such that the first optoelectronic component segment and the second optoelectronic component segment independently of one another through the substrate (102, 202, 302, 402, 802, 902, 1002) by means of the vias (104, 204, 304, 404, 804, 904, 1004) are electrically contactable from the second side of the substrate.

Description

The invention relates to a method for producing an optoelectronic component and to an optoelectronic component produced by the method.

Optoelectronic components, for example on an organic basis, for example organic, light-emitting components, due to their low power consumption, high performance and design options are increasingly being used in the vehicle industry (automotive applications), for example as light sources. In order to increase the design possibilities of the vehicle lights, more and more segmented, optoelectronic components, such as light emitting devices are used.

In the case of small light-emitting components, their electrical control can take place via a so-called passive matrix. For segmented, and therefore large, light-emitting components, this electrical control method is not sufficient because the path resistances of the electrical lines of the passive matrix increase linearly with the size and the driving force of the driver of the light emitting device is thus no longer sufficient to drive the respective segment. Since the individual segments are overdriven, the electrical control with the passive matrix has a great influence on the life of the light-emitting component. The approach of an electrical control by means of an active matrix is also difficult due to the very high cost and the relatively low robustness. In addition, both electrical control types are not sufficiently robust with respect to thermal load.

Typically, in opto-electronic devices, metallic leads and contact areas on the substrate top, i. the light-emitting or -absorbing side of the optoelectronic component, provided for component-external electrical contacting. These result in areal proportions of the optoelectronic device that make up the usable optically active area, i. the light-emitting or -absorbierende surface of the optoelectronic device, reduce. Further, contact areas disposed on the same side as the light-emitting or -absorbing side of the opto-electronic device are usually exposed by means of subsequent opening of the thin-film encapsulation (TFE). This potentially results in the formation of paths for water diffusion into the optoelectronic device and / or delamination nuclei of the thin film encapsulation.

Back side contacts for organic light emitting devices are known, in which metal wires are passed through holes in a steel substrate. However, at present, the materials and processes of such backside contacts are unsuitable for use in automotive applications because, among other things, the metal wires are fixed in the steel substrate by means of a resin and this has a high permeability to oxygen and moisture.

Also known are HermeS ^® glass substrates with so-called "through glass vias" (TGV), offered by the company SCHOTT. Also known is the TGV technology with thin glasses and copper-filled vias, which is offered by the company CORNING. Also known is FOTURAN®, which is offered by the companies SCHOTT and HOYA. Also known is the "Through Ceramic Vias" (TCV) technology, in which metallic vias are guided by ceramics. Furthermore, the production of copper-filled vias in a proprietary ceramic-insulated aluminum substrate from Cambrige Nanotherm is known.

Further, steel substrates with atomic layer deposition (ALD) or chemical vapor deposition (CVD) isolation of various regions on the substrate are known. These inorganic insulations are expensive and can only be produced in relatively small layer thicknesses, so that reliable, sufficient electrical insulation is difficult to ensure.

The object of the invention is to provide an optoelectronic component which has individually controllable, optically active component segments and is free of active or passive matrix structures for electrical control. The optoelectronic component or the optoelectronic component segments should be robust and hermetically sealed and contactable in a simple and cost-effective manner. Furthermore, the optoelectronic component should have a larger, optically active area.

A further object is to provide a method for producing an optoelectronic component, which enables cost-effective and simple production of the above-described optoelectronic component with individually activatable component segments.

In one aspect, a method of manufacturing an optoelectronic device is provided. The method has a formation on a first side of a common substrate and with a common encapsulation structure of at least one first optoelectronic component segment and a second optoelectronic component segment arranged next to the first optoelectronic component segment. The substrate has a second side opposite the first side. Furthermore, the substrate has a plurality of hermetically sealed, electrically conductive vias. The vias electrically connect each of the first side to the second side. Furthermore, the first optoelectronic component segment, the second optoelectronic component segment and the through contacts are formed such that the first optoelectronic component segment and the second optoelectronic component segment can be electrically contacted independently of one another by the substrate by means of the through contacts from the second side of the substrate.

The method makes it possible to produce an optoelectronic component which has a plurality of optoelectronic component segments. The plurality of optoelectronic component segments can be controlled by means of the through contacts without passive or active matrix, whereby manufacturing costs can be reduced. The plurality of optoelectronic component segments can be contacted with the control electronics for component-external electrical contacting after their formation. This allows the drive electronics, i. the driver or the driver circuit, the plurality of optoelectronic component segments separately from the optoelectronic component can be produced. The drive electronics are also arranged in the majority in the optically non-active surface of the optoelectronic device and allows a maximized optically active surface. The hermetically sealed, electrically conductive vias avoid the encapsulation structure, for example the thin-film encapsulation, being subsequently opened in a contact region. This allows a hermetically sealed, optoelectronic component in relation to water and oxygen diffusion.

It is desirable to develop a new control approach for large segment optoelectronic devices that is cost effective, robust, and hermetic to water diffusion while maximizing the optically active area.

The first optoelectronic component segment can be contacted and controlled independently of the second optoelectronic component segment, for example if the first optoelectronic component segment and the second optoelectronic component segment are electrically isolated from one another. This includes the fact that the respective vias connected to the first optoelectronic component segment or the second optoelectronic component segment are also electrically insulated from one another. In this case, the first optoelectronic component segment and the second optoelectronic component segment may have a common electrode, for example, the common electrode is the electrode of the electrodes, which is not in direct contact or in direct physical contact with the vias.

In one embodiment, the method includes providing a layered structure. The layer structure comprises the substrate having the first side and the first side opposite the second side, an electrically conductive layer on the first side of the substrate and a plurality of electrically conductive vias through the substrate. The electrically conductive vias electrically connect the first side to the second side. Furthermore, the electrically conductive vias are electrically conductively connected to the electrically conductive layer. The electrically conductive layer has at least a first region and a second region that is electrically insulated from the first region. In each case, the first region and the second region are electrically conductively connected to at least one electrically conductive through contact of the plurality of electrically conductive through contacts. The method further comprises forming an optoelectronic layer stack on or over at least the first region and the second region of the electrically conductive layer. In addition, the method comprises forming a further electrically conductive layer on or above the optoelectronic layer stack, so that a first optoelectronic component segment is formed in the first region and a second optoelectronic component segment is formed in the second region. The method further comprises forming the encapsulation structure on or over the further electrically conductive layer such that the first optoelectronic component segment and the second optoelectronic component segment are encapsulated together.

In yet another embodiment, the substrate is made of a ceramic or a glass.

This allows the high temperature stability of glasses or ceramics, the use of high-temperature processes, which are the subsequent robustness of the optoelectronic device beneficial.

In yet another embodiment, a plurality of holes are formed in the substrate. The holes penetrate the substrate from the first side to the second side, respectively. Further, the holes are filled with an electrically conductive material to form the plurality of electrically conductive vias.

In yet another embodiment, providing the layered structure includes providing a plurality of electrically conductive structures and shedding the plurality of electrically conductive structures with an organic material to form the substrate having the plurality of electrically conductive vias therethrough. The vias have or are the electrically conductive structures.

In yet another embodiment, providing the layer structure comprises applying the electrically conductive layer to the first side of the substrate. Further, the method comprises back structuring the electrically conductive layer such that at least the first region and the second region of the electrically conductive layer are formed electrically insulated from one another.

In yet another embodiment, providing the layer structure comprises patterning the electrically conductive layer on the first side of the substrate such that at least the first region and the second region of the electrically conductive layer are formed electrically isolated from one another.

In yet another embodiment, the substrate is an electrolytically oxidized metal substrate.

The electrolytically oxidized, for example, anodized metal substrate intrinsically allows due to the material properties a good density over the diffusion of oxygen and water. Furthermore, the porous structure of the electrolytically oxidized, for example, anodized metal material allows good adhesion of the metal vias in the substrate.

In yet another embodiment, the opto-electronic is an organic light-emitting device.

In yet another embodiment, the optoelectronic component has a conductor structure with a plurality of interconnects for component-external electrical contacting. The method further comprises externally electrically contacting the at least one first device segment and the second device segment by applying the conductor pattern to or over the first side and / or the second side of the substrate. In this case, a component segment is electrically conductively connected to at least one conductor track of the conductor structure by means of at least one electrically conductive through contact.

In yet another embodiment, the conductor tracks of the conductor structure are electrically conductively connected to the plurality of electrically conductive through contacts by means of an anisotropically conductive adhesive.

This allows a lateral, electrical isolation of the individual vias from each other, so that the device segments connected to the vias can be controlled independently of each other in a simple manner. By means of the anisotropically conductive adhesive, for example, a printed circuit board with lines for the individual component segments component-specific electrically conductive can be connected.

In yet another embodiment, the electrically conductive vias are spaced from each other by a predetermined distance. In this case, the predetermined distance with respect to the anisotropically conductive adhesive electrically isolates the at least one first component segment from the second component segment.

In yet another embodiment, the optoelectronic component has an optically active region. At least a part of the conductor structure is arranged in the optically active region.

In another aspect, an optoelectronic device is provided. The optoelectronic component has a layer structure. The layer structure includes a substrate having a first side and a second side opposite the first side, an electrically conductive layer on the first side of the substrate, and a plurality of electrically conductive vias through the substrate. The several electrically conductive vias electrically connect the first side to the second side. Furthermore, the plurality of electrically conductive vias are electrically conductively connected to the electrically conductive layer. In this case, the electrically conductive layer has at least a first region and a second region that is electrically insulated from the first region. In each case, the first region and the second region are electrically conductively connected to at least one electrically conductive through contact of the plurality of electrically conductive through contacts. The optoelectronic component further has an optoelectronic layer stack on or over at least the first region and the second region of the electrically conductive layer. In addition, the optoelectronic component has a further electrically conductive layer on or above the optoelectronic layer stack. In this case, the further electrically conductive layer is formed so that a first optoelectronic component segment is formed in the first region and a second optoelectronic component segment is formed in the second region. The optoelectronic component further has an encapsulation structure on or over the further electrically conductive layer. In this case, the encapsulation structure is designed such that the first optoelectronic component segment and the second optoelectronic component segment are encapsulated together.

In one exemplary embodiment, the optoelectronic component has a conductor structure with a plurality of conductor tracks for component-external electrical contacting. The conductor pattern is arranged on the first side and / or the second side of the substrate. In this case, a component segment is electrically conductively connected in each case by means of at least one electrically conductive through contact with at least one conductor track of the conductor structure.

In a further exemplary embodiment, the conductor tracks of the conductor structure are electrically conductively connected to the plurality of electrically conductive through contacts by means of an anisotropically conductive adhesive.

Embodiments of the invention are illustrated in the figures and are explained in more detail below.

• 1 schematische Schnittdarstellungen zu einem Verfahren zum Herstellen eines optoelektronischen Bauelements gemäß verschiedenen Ausführungsbeispielen;
• 2 schematische Schnittdarstellungen zu einem Verfahren zum Herstellen eines optoelektronischen Bauelements gemäß verschiedenen Ausführungsbeispielen;
• 3 eine schematische Schnittdarstellung eines optoelektronischen Bauelements gemäß verschiedenen Ausführungsbeispielen;
• 4 eine schematische Schnittdarstellung eines optoelektronischen Bauelements gemäß verschiedenen Ausführungsbeispielen;
• 5 eine schematische Querschnittsansicht eines optoelektronischen Bauelements gemäß verschiedenen Ausführungsbeispielen; und
• 6 ein Ablaufdiagram zu einem Verfahren zum Herstellen eines optoelektronischen Bauelements gemäß verschiedenen Ausführungsbeispielen;
• 7 schematische Draufsichten eines optoelektronischen Bauelements gemäß verschiedenen Ausführungsbeispielen;
• 8 schematische Schnittdarstellungen zu einem Verfahren zum Herstellen eines optoelektronischen Bauelements gemäß verschiedenen Ausführungsbeispielen;
• 9 schematische Schnittdarstellungen zu einem Verfahren zum Herstellen eines optoelektronischen Bauelements gemäß verschiedenen Ausführungsbeispielen; und
• 10 schematische Schnittdarstellungen zu einem Verfahren zum Herstellen eines optoelektronischen Bauelements gemäß verschiedenen Ausführungsbeispielen.

Show it:

• 1 schematic sectional views of a method for producing an optoelectronic component according to various embodiments;
• 2 schematic sectional views of a method for producing an optoelectronic component according to various embodiments;
• 3 a schematic sectional view of an optoelectronic component according to various embodiments;
• 4 a schematic sectional view of an optoelectronic component according to various embodiments;
• 5 a schematic cross-sectional view of an optoelectronic device according to various embodiments; and
• 6 a flow diagram of a method for producing an optoelectronic device according to various embodiments;
• 7 schematic plan views of an optoelectronic component according to various embodiments;
• 8th schematic sectional views of a method for producing an optoelectronic component according to various embodiments;
• 9 schematic sectional views of a method for producing an optoelectronic component according to various embodiments; and
• 10 schematic sectional views of a method for producing an optoelectronic component according to various embodiments.

In the following detailed description, reference is made to the accompanying drawings, which form a part of this specification, and in which is shown by way of illustration specific embodiments in which the invention may be practiced. Because components of embodiments may be positioned in a number of different orientations, the directional terminology is illustrative and is in no way limiting. It is understood that other embodiments may be utilized and structural or logical changes may be made without departing from To deviate scope of the present invention. It should be understood that the features of the various embodiments described herein may be combined with each other unless specifically stated otherwise. The following detailed description is therefore not to be taken in a limiting sense, and the scope of the present invention is defined by the appended claims. In the figures, identical or similar elements are provided with identical reference numerals, as appropriate.

As used herein, the terms "connected," "connected," and "coupled" are used to describe both direct and indirect connection, direct or indirect connection, and direct or indirect coupling. In the figures, identical or similar elements are provided with identical reference numerals, as appropriate.

In the context of this description, an optoelectronic component is understood to mean an optoelectronic assembly which has an optoelectronic layer stack, a carrier structure and an encapsulation structure. The optoelectronic component can be designed, for example, as a display or a lighting module.

The optoelectronic component can emit or absorb electromagnetic radiation by means of a semiconductor component.

An optoelectronic component may be an electromagnetic radiation emitting component or an electromagnetic radiation absorbing component. An electromagnetic radiation absorbing component may be, for example, a solar cell or a photodetector. In various embodiments, a component emitting electromagnetic radiation can be a semiconductor device emitting electromagnetic radiation and / or as an electromagnetic radiation emitting diode, as an organic, electromagnetic radiation emitting diode, as a transistor emitting electromagnetic radiation, or as an organic, electromagnetic radiation emitting device Transistor be formed. The radiation may, for example, be light in the visible range, UV light and / or infrared light. In this context, the electromagnetic radiation emitting device may be formed, for example, as a light emitting diode (LED), as an organic, light emitting diode (OLED), as a light emitting transistor or as an organic, light emitting transistor. The light emitting device may be part of an integrated circuit in various embodiments.

The optoelectronic component may be an organic, optoelectronic component. The organic, optoelectronic component has an organic, functional layer stack, which is synonymously also referred to as an organic, functional layer structure. The organic functional layer structure comprises or is formed from an organic substance or mixture of organic substances, for example, configured to provide electromagnetic radiation from a supplied electrical current or to provide an electrical current from a provided electromagnetic radiation. An organic, light-emitting diode is designed as a so-called top emitter and / or a so-called bottom emitter. In a bottom emitter, electromagnetic radiation is emitted from the electrically active region through the substrate. In a top emitter, electromagnetic radiation is emitted from the top of the electrically active region and not through the substrate.

An optoelectronic component may have one, two or more optoelectronic component segments, for example housed in a common housing. Each optoelectronic component segment is electrically insulated from the other optoelectronic component segments and can be controlled independently. The optoelectronic component segments may have common components of the optoelectronic component, for example a common electrode. The optoelectronic component segments form, for example, large pixels or pixels, for example, which are significantly larger than pixels or pixels of a display, e.g. Smartphone or TV.

In the context of this description, a hermetically sealed layer, for example with respect to water and / or oxygen, can be understood as a substantially hermetically sealed layer.

The term "hermetically sealed" with respect to the vias is understood in the context of this description as substantially hermetically sealed. The hermetically sealed vias, for example of metal, for example, with the substrate, such as glass, ceramic, a diffusion rate with respect to water and / or oxygen of less than about 10 ^-1 g / (m ² d) have. The hermetically sealed For example, vias to the substrate, such as glass, ceramic or polymer, may have a diffusion rate relative to water and / or oxygen of less than about 10 ^-4 g / (m ² d), for example, in a range of about 10 ^-4 g / (m ² d) to about 10 ^-10 g / (m ² d), for example in a range from about 10 ^-4 g / (m ² d) to about 10 ^-6 g / (m ² d), for example less than 10 ^{- 6} g / (m ² d).

In various embodiments, a hermetically sealed substance or a hermetically sealed mixture of substances may comprise or be formed from a ceramic, a metal and / or a metal oxide.

1 shows schematic sectional views of a method for producing an optoelectronic component according to various embodiments.

In various embodiments, a method for producing an optoelectronic component 150 provided. The method comprises forming at least one first optoelectronic component segment 118a and a second optoelectronic component segment 118b . 118c . 118d on the first page 103a a common substrate 102 and with a common encapsulation structure 114 on. The substrate 102 has a second side opposite the first side 103b on. Furthermore, the substrate has a plurality of hermetically sealed, electrically conductive vias. Furthermore, the at least one first optoelectronic component segment 118a and the second optoelectronic device segment 118b . 118c . 118d formed such that they independently through the substrate 102 by means of the vias from the second side 103b of the substrate 102 are electrically contacted.

The method makes it possible to produce an optoelectronic component which has a plurality of optoelectronic component segments. The plurality of optoelectronic component segments can be controlled by means of the through contacts without passive or active matrix, whereby manufacturing costs can be reduced. The plurality of optoelectronic component segments can be contacted with the control electronics for component-external electrical contacting after their formation. This allows the drive electronics, i. the driver or the driver circuit, the plurality of optoelectronic component segments separately from the optoelectronic component can be produced. The drive electronics are also arranged in the majority in the optically non-active surface of the optoelectronic device and allows a maximized optically active surface. The hermetically sealed, electrically conductive vias avoid the encapsulation structure, for example the thin-film encapsulation, being subsequently opened in a contact region. This allows a hermetically sealed, optoelectronic component in relation to water and oxygen diffusion.

The term "substrate" is understood herein to mean that it is a support structure that mechanically supports and holds together the optoelectronic device. The optoelectronic component segments are deposited on the substrate.

The term "encapsulation structure" is understood here to mean that it is a cover structure which is arranged to protect the optoelectronic component from external impurities on or above the deposited layers of the optoelectronic component.

A substrate on which the optoelectronic component is deposited is not considered as an encapsulation structure in the sense of the invention.

In various embodiments, the method includes providing a layered structure (as in FIGS 1a to 1D shown). The layer structure comprises the substrate 102 with the first page 103a and the second side opposite the first side 103b on. Furthermore, the layer structure has an electrically conductive layer 106 on the first page 103a of the substrate 102 on. In addition, the layer structure has a plurality of electrically conductive vias 104 on. The electrically conductive vias penetrate through the substrate 102 , The electrically conductive vias electrically connect the first side 103a with the second page 103b , The electrically conductive vias are connected to the electrically conductive layer 106 electrically connected. The electrically conductive layer 106 has at least a first area 108a and a second region electrically isolated from the first region 108b . 108c . 108 d . 108e on. In each case, the first area 108a and the second area 108b . 108c . 108 d . 108e with at least one electrically conductive through contact 104 the plurality of electrically conductive vias electrically conductively connected.

This allows the multiple electrically conductive vias 104 serve as electrical contacts for the respective optoelectronic component segments. In other words, each optoelectronic component segment has at least one separate contact with the component-external electrical contacting of the electrically conductive layer of the respective optoelectronic component segments. For example, at least one electrically conductive via 104 in physical and electrically conductive contact with the electrically conductive layer 106 and thus serves as the first electrical contact of the optoelectronic component segment.

The method further comprises forming an optoelectronic layer stack 110 on or over at least the first area 108a and the second area 108b . 108c . 108 d . 108e the electrically conductive layer 106 on. In addition, the method comprises forming a further electrically conductive layer 112 on or above the optoelectronic layer stack 110 on, so in the first area 108a a first optoelectronic component segment 118a and in the second area 108b . 108c . 108 d a second opto-electronic component segment 118b . 118c . 118d be formed. At least one electrically conductive through contact 104 is in physical and electrically conductive contact with the further, electrically conductive layer 112 and thus serves as the second electrical contact of the optoelectronic component segment. In other words, each optoelectronic component segment has a second contact with the component-external electrical contact. The second contact may be a common, electrical contact for a plurality or all of the optoelectronic component segments 118a . 118b . 118c . 118d be, for example, a ground connection. Furthermore, the method comprises forming the encapsulation structure 114 on or over the further electrically conductive layer 112 such that the first optoelectronic component segment 118a and the second optoelectronic device segment 118b . 118c . 118d be encapsulated together.

1A illustrates the substrate 102 with the first page 103a and the second side opposite the first page 103b ,

In various embodiments, the substrate 102 be rigid. Alternatively or additionally, the substrate 102 be mechanically flexible. The term "flexible" is understood herein to mean that the substrate becomes bending radii of 100 mm or less is bendable without being damaged.

The substrate 102 For example, it may comprise or be formed from a glass. Glass in the sense of the invention is, for example, an amorphous inorganic material, for example substantially of silicon dioxide. Examples of glass are quartz glass, crown glass, window glass, soda-lime glass or flint glass. Alternatively or additionally, the substrate 102 have a ceramic or be formed from it. This allows, due to the high temperature stability of glasses or ceramics, the use of high temperature processes, which are conducive to the subsequent robustness of the optoelectronic component. Alternatively or additionally, the substrate 102 a semiconductor material and / or a metal or a metal compound, for example copper, silver, gold, platinum, or any other suitable material or be formed therefrom. In the event that the substrate 102 a semiconductor material and / or a metal or a metal compound is prior to forming the vias 104 an additional step of forming an insulating layer on the substrate is necessary to electrically isolate the vias of electrically conductive material from at least a portion of the substrate and thus electrically isolate the organic optoelectronic device elements. Optoelectronic devices with a metal substrate are described in more detail below (see, for example 8th . 9 . 10 )

The substrate 102 For example, a polyimide film (PI), such as a Kapton film from DuPont, a metal foil or a polymer film, for example, with inorganic encapsulation. For example, the substrate 102 a steel foil, a plastic film or a laminate having one or more plastic films or be formed therefrom. The plastic may include or be formed from one or more polyolefins (eg, high or low density polyethylene or PE) or polypropylene (PP). Further, the plastic may include or be formed from polyester and / or polycarbonate (PC), polyethylene terephthalate (PET), polyethersulfone (PES), polyetheretherketone (PEEK), polyetheretherimide (PEI), polytetrafluoroethylene (PTFE) and / or polyethylene naphthalate (PEN). The substrate 102 may comprise one or more of the above materials.

In various embodiments, the plurality of electrically conductive vias 104 formed by placing several holes in the substrate 102 be formed, which is the substrate 102 each from the first page 103a to the second page 103b penetrate (see 1B) , The holes are then filled with an electrically conductive material (see 1C) , The holes are on the second side, for example 103b of the substrate 102 free from overfilling or supernatant of the electrically conductive Material. In other words, the filling of the holes with the electrically conductive material is on the second side 103b of the substrate 102 limited to the dimensions of the holes and not overfilling a hole each. Alternatively, the electrically conductive material, for example, as a layer on the substrate 102 be applied. This will be the whole substrate 102 For example, if the substrate is not previously covered with polymers, coated with the electroplating, wherein the supernatant of electrically conductive material on the substrate 102 can be removed by wegätzen. The through contacts 104 , ie the electrically conductive material of the vias 104 , the holes in the substrate hermetically seal against water and / or oxygen. In other words, the substrate and the vias are essentially free of diffusion paths for water and / or oxygen. For example, the substrate and vias have a water diffusion rate of less than 10 ^-4 g / (m ² d), for example less than 10 ^-6 g / (m ² d).

In various embodiments, the plurality of electrically conductive vias 104 each have a diameter in a range of about 10 microns to about 100 microns. The substrate 102 may have a thickness ranging from about 15 μm to about 1500 μm. In this case, the ratio of the thickness of the substrate 102 to the diameter of the plurality of electrically conductive vias 104 in a range of 10 to 100 lie. In other words, the through contacts 104 can each have an aspect ratio of height (thickness of the substrate) to width (diameter of a via) in a range of 10 to 100 exhibit.

The substrate may for example be perforated at certain points by means of punching, micro-sand blasting and / or laser cutting in order to form the holes in which the through contacts are subsequently formed. Alternatively or additionally, if the substrate is formed of a photosensitive glass, the holes may be formed by lithography followed by an etching process. Alternatively or additionally, if the substrate is formed of a ceramic, the stamping of the substrate may be carried out in an unsintered state of the substrate and the substrate is then sintered. The holes may have any shape, for example, round, oval, rectangular, polygonal, square, etc ..

The holes or vias 104 For example, they are arranged such that they are arranged at a predetermined distance from each other. The arrangement and / or the predetermined distance are configured such that the plurality of electrically conductive vias can be electrically isolated from each other, for example, such that the vias of the different component segments are electrically isolated from each other, ie no so-called "cross-talk" between the component segments ,

Furthermore, the holes or vias 104 in a predetermined arrangement in the substrate 102 be provided. The predetermined arrangement is adapted, for example, to the course of lines and the contact areas of a given circuit board. For example, the vias are in a line-shaped area in the substrate 102 arranged for a line-shaped circuit board. The linear printed circuit board can be, for example, a flexible conductor strip which has a plurality of bendable, electrically insulated lines. The printed circuit board is electrically conductively connected to the component segments by means of the through contacts via the rear side of the substrate.

The distance between two vias 104 different component segments to each other, for example, less than about 5 mm, for example, less than about 1 mm, for example, less than 0.5 mm. It is understood that the maximum distance results from the dimension of the substrate, ie the maximum distance of the vias is smaller than the width of the substrate 102 ,

The electrically conductive material comprises, for example, a metal, a metal alloy, a semiconductor material or is formed therefrom. Examples of metals are copper, tungsten, nickel, iron, gold, platinum or mixtures thereof. The electrically conductive material can be applied to the substrate as a paste, for example metal paste or as electroplating. In the case of electroplating, a seed layer may be applied to the substrate by sputtering prior to application of the electroplating. This allows improved adhesion of the electroplating on the substrate and a better growth behavior of the electroplating. Alternatively or additionally, a seed layer can be applied to the substrate in a planar manner by sputtering and galvanically reinforced.

The substrate 102 with the plurality of electrically conductive vias 104 For example, it may be a conventional substrate. For example, the substrate 102 a relatively thicker ( 500 μm) glass wafers through which metal vias are made, such as the company's Through Glass Vias (TGV) technology SCHOTT Hermes® Hermetic or CORNING. The substrate may also be a photo-sensitive glass from HOYA and SCHOTT (FOTURAN). Alternatively, the substrate may be formed of a ceramic, such as through ceramic vias (TCV) technology. Alternatively, the substrate is an anodized metal such as anodized aluminum.

The table summarizes examples of suitable substrate preparation methods: reference method Dimensions (diameter / distance) YKPark et al. [1] sandblasting 200 (μm) JY Lee et al. [1] NEC Schott [2] Glass reflow process - copper tungsten 40/140 (μm) 100 (μm) Hoya Glass [3] 3D Glass solutions Photosensitive glasses 25 (μm) Asahi Glass Company [4] Electrical discharge 30 (μm) T. Akashi et al. [5] L. Li et al. [6] X. Li et al. [7] DRIE (SFf ₆ / C ₄ F ₈ ) 100 (microns) ABYarkar [8], [9], YTChen et al. [10], D.Bhatt et al. [11], K. Berndetal [12], AATseng et al. [13], L.Brusberg et al. [14] CKChung et al. [15], S.Yu et al. [16] Laser cutting - fs laser - excimer laser - CO ₂ laser 40 (μm) 100 (μm) 100 (μm) O. Nukaga et al. [17] Laser-assisted etching 15 μm Corning Glass [18] Corning method 30 (μm)

In various embodiments, providing the layer structure further comprises applying the electrically conductive layer 106 on the first page 130a of the substrate 102 on. The method step of applying and filling the holes can be carried out in a common method step. At this time, the electrically conductive material filled in the holes and the electrically conductive layer formed on the first side of the substrate may have the same material.

In various embodiments, providing the layer structure further includes back structuring 528 the electrically conductive layer 106 in such a way that at least the first area 108a and the second area 108b . 108c . 108 d . 108e the electrically conductive layer 106 be formed electrically isolated from each other. As in 1D are illustrated, for example, by structuring the electrically conductive layer 106 a first area 108a , a second area 108b , a third area 108c , a fourth area 108 d and a fifth area 108e educated. In this case, the structuring of the electrically conductive layer 106 formed areas from each other electrically isolated. The first area 108a is for example with the electrically conductive contact 104a , the second area 108b with the electrically conductive via 104b , the third area 108c with the electrically conductive via 104c , the fourth area 108 d with the two electrically conductive vias 104d and the fifth area 108e with the electrically conductive via 104e electrically connected. This forms the structured, electrically conductive layer 106 in the different, electrically isolated areas 108a . 108b . 108c . 108 d in each case one electrode layer of the respective optoelectronic component segments 118a . 118b . 118c . 118d out.

After forming the optoelectronic layer stack 110 , forming the further electrically conductive layer 112 and forming the encapsulation structure 114 on or above the electrode layers of the respective optoelectronic component segments 118a . 118b . 118c . 118d is an optoelectronic device 150 provided. The optoelectronic component 150 has at least one first optoelectronic component segment 118a in the at least first area 108a and in the second region, a second opto-electronic device segment 118b . 118c . 118d on. For example, as in 1E is illustrated, the optoelectronic component 150 in the first area 108a a first optoelectronic component segment 118a in the second region, a second optoelectronic component segment 118b in the third area 108c a third optoelectronic component segment 118c and in the fourth area 108 d a fourth optoelectronic component segment 118d on.

As in 1E is illustrated has the layer structure of the optoelectronic component 150 the substrate 102 , the electrically conductive layer 106 on the first page 103a of the substrate 102 and the plurality of electrically conductive vias 104 through the substrate 102 on. The substrate has a first side 103a and a second side opposite the first side 103b on. The multiple electrically conductive vias 104 electrically conductively connect the first page 103a with the second page 103b through the substrate 102 , Furthermore, the plurality of electrically conductive vias 104 with the electrically conductive layer 106 electrically connected. The electrically conductive layer 106 has at least a first area 108a and a second region electrically isolated from the first region, for example, a first region 108a , a second area 108b , a third area 108c , a fourth area 108 d and a fifth area 108e , In each case, the at least one first area 108a and the second area 108b for example, the first area 108a , the second area 108b , the third area 108c , the fourth area 108 d and the fifth area 108e each with at least one electrically conductive via 104 the plurality of electrically conductive vias electrically conductively connected. At least one through contact of the plurality of electrically conductive vias is electrically insulated from at least one other vias of the plurality of electrically conductive vias. The vias are each hermetically sealed with respect to water and / or oxygen in the substrate, ie there is substantially no diffusion path for water and / or oxygen from the second side through the substrate to the first side in the region of the vias.

The optoelectronic component 150 further comprises the optoelectronic layer stack 110 on at least the first area 108a and the second area 108b for example on the first area 108a , the second area 108b the third area 108c , and the fourth area 108 d the electrically conductive layer 106 on. In this case, the optoelectronic layer stack 110 as well as the electrically conductive layer may be structured on the structured, electrically conductive layer. Alternatively, the optoelectronic layer stack 110 be formed as a closed layer, which is on and / or over the at least one first area 108a and the second area 108b . 108c . 108 d , for example, over the first area 108a , the second area 108b the third area 108c and the fourth area 108 d extends.

The optoelectronic component 150 further comprises the further electrically conductive layer 112 on or above the optoelectronic layer stack 110 and / or on or above the at least one first area 108a and the second area 108b . 108c . 108 d . 108e on, for example, over the first area 108a , the second area 108b the third area 108c the fourth area 108 d , and the fifth area 108e , The further electrically conductive layer 112 is formed so that in the at least one first area 108a a first optoelectronic component segment 118a and in the second area 108b . 108c . 108 d a second optoelectronic component segment may be formed, for example in the first region 108a a first optoelectronic component segment 118a in the second area 108b a second opto-electronic component segment 118b in the third area 108c a third optoelectronic component segment 118c and in the fourth area 108 d a fourth optoelectronic component segment 118d , In one embodiment, the fifth region 108e free from the optoelectronic layer stack 110 be. In this case, the further electrically conductive layer 112 on the fifth area 108e extend. As a result, the further electrically conductive layer 112 with the electrically conductive layer structured in the fifth region 106 electrically conductive and physically connected and with the, in the fifth area 108e arranged, electrically conductive contact 104e by means of the structured, electrically conductive layer 106 electrically connected. It can be in the fifth area 108e arranged electrically conductive contact 104e as a second contact to the component-external electrical contacting of the further, electrically conductive layer 112 serve the respective optoelectronic component segments. In other words, two or more terminals or contacts or contact regions of the optoelectronic component or of the at least two optoelectronic component segments can be contacted by means of the through contacts of the rear side of the substrate and thus the back of the optoelectronic component. This allows a simpler contacting of the optoelectronic component.

The optoelectronic component 150 also has the encapsulation structure 114 on or over the further electrically conductive layer 112 on. Here is the encapsulation structure 114 formed such that the at least one first optoelectronic component segment 118a and the second optoelectronic device segment 118b . 118c . 118d , For example, the first optoelectronic component segment 118a , the second optoelectronic component segment 118b , the third optoelectronic component segment 118c and the fourth optoelectronic device segment 118d are encapsulated together. The encapsulation structure is described in more detail below (see, for example 5 ). The encapsulation structure 114 encapsulates the optoelectronic together with the substrate with the hermetically sealed vias Component segments hermetically sealed with respect to a diffusion of water and / or oxygen into the current-carrying layers of the optoelectronic component segments.

In various embodiments, the optoelectronic component 150 an organic, optoelectronic component, for example a light-emitting component, for example an organic, light-emitting component, for example in the form of a top and / or bottom emitter. The optoelectronic component or the structure of the optoelectronic component is described in more detail below (for example, in US Pat 5 ).

2 shows schematic sectional views of a method for producing an optoelectronic component according to various embodiments.

In the following, various modifications and configurations of the optoelectronic component will be described, wherein the above-described, basic features and functions of the optoelectronic component according to one of the embodiments described above are analogously einbeziehbar. Furthermore, the features and functions described below can be analogous to that in the 1 described optoelectronic component to be transmitted or with the in the 1 be combined described optoelectronic component.

In various embodiments, providing the layer structure includes providing a plurality of electrically conductive structures 203 on, like in 2A is illustrated. Furthermore, the provision of the layer structure has, for example, a potting of the plurality of electrically conductive structures 203 with an organic material or inorganic glass to the substrate 202 with the thus penetrating a plurality of electrically conductive vias 204 to form, as in 2 B is illustrated. In the event that a polymer potting is used as organic material, the subsequently formed thin-film encapsulation layer is carried out, for example, with appropriate back structuring via the metal contacts. This can be the substrate 202 or the plurality of electrically conductive vias 204 have the same material or be formed from it, as in the 1 described, formed of electrically conductive material substrate 102 or in the 1 described a plurality of electrically conductive vias 104 , The substrate is formed, for example, by means of potting a liquid polymer precursor, also referred to as precursor. Examples of polymer precursors are polyimide solutions and polyetherimide solutions.

In various embodiments, the electrically conductive layer 206 on the first page 203a of the substrate 202 structured, as in the 2C and 2D is illustrated. The structured formation of the electrically conductive layer 206 can, as in the 1 described by means of applying the electrically conductive layer 206 , For example, a flat application, on the first page 203a of the substrate 202 (please refer 2C) and back structuring the electrically conductive layer 206 (please refer 2D) respectively. Alternatively, the patterned formation of the electrically conductive layer 206 a structured application of the electrically conductive layer 206 on the first page 203a of the substrate 202 when the step of filling the holes is free from overhang, ie, free from overfilling the holes, as in US Pat 2 B and 2D is illustrated, wherein in the 2C shown step is optional. The electrically conductive layer 206 is applied structured such that at least the first area 208a and the second area 208b . 208c . 208d . 208e the electrically conductive layer 206 for example, the first area 208a , the second area 208b , the third area 208c , the fourth area 208d and the fifth area 208e be formed electrically isolated from each other.

In one embodiment, as in 2D is shown, the optoelectronic device 250 with several component segments 218a . 218b . 218c . 218d after forming the optoelectronic layer stack, forming the further, electrically conductive layer 212 and forming the encapsulation structure 214 educated. The optoelectronic component 250 For example, in the at least one first area 208a the at least one first optoelectronic component segment 218a and in the second area 208b . 208c . 208d the second optoelectronic component segment 218b . 218c . 218d on, for example, in the first area 208a the first optoelectronic component segment 218a in the second area 208b the second optoelectronic component segment 218b in the third area 208c the third optoelectronic component segment 218c and in the fourth area 208d the fourth optoelectronic component segment 218d ,

3 illustrates a schematic sectional view of an optoelectronic component according to various embodiments.

In the following, various modifications and configurations of the optoelectronic component are described, wherein the above-described basic features and modes of operation of the optoelectronic component according to one of the embodiments described above can be incorporated analogously. Furthermore, the features and functions described below can be analogous to that in the 1 and 2 described optoelectronic component to be transmitted or with the in the 1 and 2 be combined described optoelectronic component.

In various embodiments, the method is for producing the optoelectronic component 350 similar to the one in the 1 and 2 described method for producing the optoelectronic component 150 . 250 , The method for producing the optoelectronic component 350 but further includes an external electrical contacting of the at least one first component segment 318a and the second component segment 318b . 318c . 318d by applying a conductor structure 322 on the first page 303a and / or the second page 303b of the substrate 302 on. The substrate 302 can with the in the 1 respectively. 2 described substrate 102 respectively. 202 to match. In this case, the conductor structure 322 several tracks 320 for component-external electrical contacting. When applying the conductor structure 322 On the substrate, each component segment is in each case by means of at least one electrically conductive via 304 the plurality of electrically conductive vias 304 with at least one track 320 the ladder structure 322 electrically connected. The through contacts 304 can with the in the 1 respectively. 2 described through contacts 104 respectively. 204 to match.

The method allows for easy external electrical contacting of the respective optoelectronic component segments 318a . 318b . 318c . 318d without requiring a passive or active matrix. The ladder structure 322 with the several tracks 320 allows the external electrical contacting of the respective optoelectronic component segments 318a . 318b . 318c . 318d of the optoelectronic component 350 , wherein the respective optoelectronic component segments 318a . 318b . 318c . 318d are independently controlled electrically.

In various embodiments, the step of external electrical contacting takes place before or after the formation of the optoelectronic layer stack 310 , The optoelectronic layer stack 310 can with the in the 1 respectively. 2 described optoelectronic layer stack 110 respectively. 210 to match. Alternatively or additionally, the step of external electrical contacting takes place, for example, before or after the formation of the further electrically conductive layer 312 , In this case, the further electrically conductive layer 312 with the in the 1 respectively. 2 described further electrically conductive layer 112 respectively. 212 to match. Alternatively or additionally, the step of external electrical contacting takes place, for example, before or after the formation of the encapsulation layer 314 , In this case, the encapsulation layer 314 with the in the 1 respectively. 2 described encapsulation layer 114 respectively. 214 to match.

As in 3 is illustrated is the optoelectronic device 350 similar to the one in the 1 and 2 described, optoelectronic device 150 . 250 built up. In this case, the electrically conductive layer 306 with the in the 1 respectively. 2 described electrically conductive layer 106 respectively. 206 to match. In this case, the organic, optoelectronic component segments 318a . 318b . 318c . 318d with the in the 1 respectively. 2 described organic, optoelectronic component segments 118a . 118b . 118c . 118d respectively. 218a . 218b . 218c . 218d to match. The optoelectronic component 350 but also points to the second page 303b of the substrate 302 a ladder structure 322 with several tracks 320 to the component-external electrical contact on. The ladder structure 322 can be a circuit board. For example, the ladder structure 322 flat on the second side of the substrate 302 arranged.

The optoelectronic component 350 has an optically active main surface and an optically inactive main surface opposite to the main optically active surface. The term "optically active main surface" is understood here to mean a main surface of the optoelectronic component in which a light is emitted or absorbed. The term "optically inactive main surface" is understood here to mean a main surface of the optoelectronic component in which no light is emitted or absorbed, ie in an edge region or on the side of the optoelectronic component opposite the light-absorbing or emitting side. As in 3 is illustrated is the optoelectronic device 350 for example, formed as an organic, light-emitting device in top emitter design. The light (in 3 illustrated as an arrow) is indicated by the encapsulation 314 emitted and not through the substrate 302 , The arrow shows the direction of the optically active main surface. A component segment is, for example, in each case by means of at least one electrically conductive through-contact 304 with at least one track 320 the ladder structure 322 electrically connected. This is done external electrical contacting of the respective optoelectronic component segments on the optically non-active main surface of the optoelectronic component. In other words, the respective optoelectronic component segments 318a . 318b . 318c . 318d are, for example, on the non-light-emitting or -absorbing side of the optoelectronic component 350 by means of the conductor tracks 320a . 320b . 320c . 320d the ladder structure 322 electrically contacted. In this case, the optically active main surface is free of the conductor structure 322 ,

The ladder structure 322 has, for example, the same number of printed conductors 320 on how the number of several electrically conductive vias 304 , For example, the conductor structure 322 a first trace 320a , a second track 320b , a third track 320c , two fourth tracks 320d , and a fifth trace 320e on. In this case, the conductor tracks 320 in the ladder structure 322 be arranged such that a conductor track 320 each with an electrically conductive via 304 is electrically connected. For example, the first trace 320a with the first electrically conductive via 304a , the second track 320b with the second electrically conductive via 304b , the third track 320c with the third electrically conductive via 304c , the two fourth tracks 320d with the two fourth electrically conductive vias 304d and the fifth track 320a with the fifth electrically conductive via 304a electrically connected. As a result, the first optoelectronic component segment 318a by means of the first conductor track 320a , the second optoelectronic component segment 318b by means of the second conductor track 320b , the third optoelectronic component segment 318c by means of the third track 320c and the fourth optoelectronic device segment 318d by means of the two fourth interconnects 320d externally electrically contactable.

In various embodiments, the conductor structure 322 by means of an anisotropically conductive adhesive 316 (Anisotropic conductive film, ACF) applied to the substrate and attached. The anisotropic conductive adhesive 316 is herein understood to mean that it is a sticky composition having electrical conductivity in the thickness direction (Z direction), and is not electrically conductive in the plane direction (X and Y directions) has a low conductivity. The conductivity in the plane direction is also called transverse conductivity.

The distance between the vias 104 , which are connected to different optoelectronic component segments, is selected or the vias 104 formed at such a distance from each other that the distance is greater than the transverse conductivity of a given, anisotropically conductive adhesive, which is used to connect the vias 104 with the ladder structure 322 is used.

In various embodiments, the electrically conductive vias 304 spaced apart from each other by a predetermined distance. The predetermined distance isolated with respect to the anisotropically conductive adhesive 316 the at least one first component segment 318a from the second component segment 318b . 318c . 318d electric. For example, if the thickness of the film of anisotropically conductive adhesive 316 in a field between 10 μm to 30 is the predetermined distance between the adjacent electrically conductive vias 304 in a field between 200 μm to 250 microns. For example, if the thickness of the film of anisotropically conductive adhesive 316 in a field between 2 μm to 3 is the predetermined distance between the adjacent electrically conductive vias 304 in a field between 150 μm to 200 microns.

The anisotropic conductive adhesive 316 may form a film between the substrate and the conductor pattern. The anisotropic conductive adhesive 316 allows easy attachment of the conductor structure 322 with the substrate 302 , Alternatively or additionally, the conductor structure 322 by soldering, gluing with an electrically conductive adhesive, also referred to as conductive adhesive applied to the substrate and fixed. This will create a trace 320 the plurality of interconnects of the conductor structure 322 with an electrically conductive via 304 the plurality of electrically conductive vias 304 electrically connected.

4 illustrates a schematic sectional view of an optoelectronic component according to various embodiments.

In the following, various modifications and configurations of the optoelectronic component are described, wherein the above-described basic features and modes of operation of the optoelectronic component according to one of the embodiments described above can be incorporated analogously. Furthermore, the features and functions described below can be analogous to that in the 1 . 2 and 3 described optoelectronic component to be transmitted or with the in the 1 . 2 and 3 be combined described optoelectronic component.

In various embodiments, the method is for producing the optoelectronic component 450 similar to the one in the 1 . 2 . 3 described method for producing the optoelectronic component 350 ,

As in 4 is illustrated is the optoelectronic device 450 similar to the one in the 1 and 2 described, optoelectronic device 150 . 250 built up. The optoelectronic component 450 is designed, for example, as an organic, light-emitting component in bottom-emitter design. The arrow in 4 indicates the direction of light emission and thus the optically active major surface. The optoelectronic component 450 points, for example, to the first page 403a and the second page 403b of the substrate 402 a ladder structure 422 for component-external electrical contacting. The substrate 402 can with the in the 1 respectively. 2 described substrate 102 respectively. 202 to match. The ladder structure 422 has, for example, a circuit board 422a and a plurality of conductor tracks electrically connected to the printed circuit board 422b on. For example, each optoelectronic component segment 418a . 418b . 418c with the circuit board 422a in each case by means of at least one conductor track 422b electrically connected. The through contacts 404 can with the in the 1 respectively. 2 described through contacts 104 respectively. 204 to match. The optoelectronic layer stack 410 can with the in the 1 respectively. 2 described optoelectronic layer stack 110 respectively. 210 to match. The electrically conductive layer 406 can with the in the 1 respectively. 2 described electrically conductive layer 106 respectively. 206 to be the same or the same. The organic, optoelectronic component segments 418a . 418b . 418c can with the in the 1 respectively. 2 described organic, optoelectronic component segments 118a . 118b . 118c . 118d respectively. 218a . 218b . 218c . 218d to be the same or the same. The further electrically conductive layer 412 can with the in the 1 respectively. 2 described further electrically conductive layer 112 respectively. 212 to match.

In various embodiments, at least a portion of the conductor structure 422 arranged on the optically active main surface. For example, the conductor tracks 422b the ladder structure 422 arranged on the optically active main surface. Each optoelectronic component segment 418a . 418b . 418c is for example by means of at least one electrically conductive through contact 404a . 44b . 404c with at least one track 422b the ladder structure 422 connected. For example, the conductor tracks 422b on the second page 403b of the substrate 402 or evaporated on the optically active main surface of the substrate, printed or restructured from an electrically conductive layer. This will be the tracks 422b for example, at the edge region of the optoelectronic component 450 with the circuit board 422a contacted. In this case, the printed circuit board can be arranged on the optically inactive main surface of the optoelectronic component. At least part of the circuit board 422a can be arranged on the edge region of the optoelectronic component on the second side of the substrate. Alternatively or additionally, at least a part of the printed circuit board 422a on the encapsulation structure 414 be arranged, ie in physical contact with the encapsulation structure 414 be. In other words: at least a part of the circuit board 422a is, for example, on the side of the optoelectronic component opposite the optically active main surface 450 arranged.

5 shows a schematic cross-sectional view of an optoelectronic component according to various embodiments. The optoelectronic component may correspond to an exemplary embodiment of an optoelectronic component described above.

In various embodiments, the optoelectronic component 1 an organic, light-emitting component.

The substrate 12 of the optoelectronic component 1 can be translucent or transparent. The substrate 12 serves as a carrier element for electronic elements or layers, for example light-emitting elements. The substrate 12 For example, plastic, metal, glass, quartz and / or a semiconductor material can have or be formed from it. Furthermore, the substrate 12 comprise or be formed from a plastic film or a laminate with one or more plastic films. The substrate 12 can be mechanically rigid or mechanically flexible.

On the substrate 12 has the optoelectronic component 1 a first electrode layer 14 on. Conventional has the electrode layer 14 a first contact section 16 , a second contact section 18 and the first electrode 20 on. The electrode 20 can with the in the 1 . 2 . 3 and 4 match described electrically conductive layer. The conventional first and second contact portions are replaced according to the embodiments of the invention by the vias. Between the substrate 12 and the first electrode structure 14 a first barrier layer, not shown, For example, a first barrier thin film, be formed. Conventionally, the second contact portion 18 is with the first electrode 20 electrically coupled. Conventional is the first electrode 20 is from the first contact section 16 by means of an electrical insulation barrier 21 electrically isolated. The first electrode 20 may be formed as an anode or as a cathode. The first electrode 20 can be translucent or transparent. The first electrode 20 has an electrically conductive material, for example, metal and / or a conductive conductive oxide (TCO) or a layer stack of several layers comprising metals or TCOs. The first electrode 20 For example, a layer stack may comprise a combination of a layer of a metal on a layer of a TCO, or vice versa. An example is a silver layer deposited on an indium tin oxide (ITO) layer (Ag on ITO) or ITO-Ag-ITO multilayers. The first electrode 20 may alternatively or in addition to the materials mentioned: networks of metallic nanowires and - particles, such as Ag, networks of carbon nanotubes, graphene particles and layers and / or networks of semiconducting nanowires.

Above the first electrode 20 is the optoelectronic layer structure 22 educated. The optoelectronic layer structure 22 can with the in the 1 . 2 . 3 and 4 described, optoelectronic layer stack match. The optoelectronic layer structure 22 For example, it may have one, two or more sublayers. For example, the optoelectronic layer structure 22 be one. The organic, functional layer structure 22 may comprise a hole injection layer, a hole transport layer, an emitter layer, an electron transport layer and / or an electron injection layer. The hole injection layer serves to reduce the band gap between the first electrode and hole transport layer. In the hole transport layer, the hole conductivity is larger than the electron conductivity. The hole transport layer serves to transport the holes. In the electron transport layer, the electron conductivity is larger than the hole conductivity. The electron transport layer serves to transport the electrons. The electron injection layer serves to reduce the band gap between the second electrode and the electron transport layer. Furthermore, the organic, functional layer structure 22 one, two or more functional layer structure units, each having said sub-layers and / or further intermediate layers.

Above the optoelectronic layer structure 22 is formed a second electrode, which is electrically conventional with the first contact portion 16 is coupled. In the exemplary embodiments of the invention, the second electrode is electrically conductively connected via the segmented, electrically conductive layer to at least one through contact. The second electrode 23 can with the in the 1 . 2 . 3 and 4 match described further electrically conductive layer. The second electrode 23 may according to one of the embodiments of the first electrode 20 be formed, wherein the first electrode 20 and the second electrode 23 may be the same or different. The first electrode 20 serves, for example, as the anode or cathode of the optoelectronic layer structure. The second electrode 23 serves corresponding to the first electrode as the cathode or anode of the optoelectronic layer structure 22 ,

The optoelectronic layer structure 22 is an electrically and / or optically active region. The optoelectronic layer structure 22 is with the first electrode structure 14 and the second electrode 23 electrically connected. In other words, the first electrode structure 14 is by means of the optoelectronic layer structure 22 with the second electrode 23 electrically connected. The active region is, for example, the region of the optoelectronic component 1 in which electrical current for operation of the optoelectronic component 1 flows and / or in which electromagnetic radiation is generated or absorbed. In other words: that is, an electric current for operating the optoelectronic component 1 can from the first electrode structure 14 through the optoelectronic layer structure 22 to the second electrode 23 flow or alternatively in the opposite direction. On or above the active area, a getter structure (not shown) may be arranged. The getter layer can be translucent, transparent or opaque. The getter layer may include or be formed of a material that absorbs and binds substances that are detrimental to the active area.

Above the second electrode 23 and conventionally partially over the first contact portion 16 and partially over the second contact portion 18 is an encapsulation layer 24 the optoelectronic layer structure is formed, which encapsulates the optoelectronic layer structure. The encapsulation layer 24 can with the in the 1 . 2 . 3 and 4 match the encapsulation structure described. In the encapsulation layer 24 are above the first contact section 16 a first recess of the encapsulation layer 24 and over the second contact portion 18 a second recess of the encapsulation layer 24 educated. In the first recess of the encapsulation layer 24 is a first contact area 32 exposed and in the second recess of the encapsulation layer 24 is a second contact area 34 exposed. The first contact area 32 serves for electrically contacting the first contact section 16 and the second contact area 34 serves for electrically contacting the second contact section 18 ,

The encapsulation layer 24 may be formed as a second barrier layer, for example as a second barrier thin layer. The encapsulation layer 24 can also be referred to as thin-layer encapsulation. The encapsulation layer 24 forms a barrier to chemical contaminants or atmospheric substances, in particular to water (moisture) and oxygen. The encapsulation layer 24 may be formed as a single layer, a layer stack or a layer structure. The encapsulation layer 24 may include or be formed from: alumina, zinc oxide, zirconia, titania, hafnia, tantalum oxide, lanthania, silica, silicon nitride, silicon oxynitride, indium tin oxide, indium zinc oxide, aluminum doped zinc oxide, poly (p-phenylene terephthalamide), nylon 66 , as well as mixtures and alloys thereof. Optionally, the first barrier layer on the substrate 12 corresponding to a configuration of the encapsulation layer 24 be educated.

Above the encapsulation layer 24 An adhesive layer may be formed. The adhesive layer 36 has, for example, an adhesive, for example an adhesive, for example a laminating adhesive, a lacquer and / or a resin. The adhesive layer 36 For example, it may comprise particles which scatter electromagnetic radiation, for example light-scattering particles.

Over the adhesive layer 36 a cover body 38 is formed. The adhesive layer 36 serves to fasten the cover body 38 at the encapsulation layer 24 , The cover body 38 has, for example, glass and / or metal. For example, the cover body 38 may be formed essentially of glass and a thin metal layer, such as a metal foil, and / or a graphite layer, such as a graphite laminate, on the glass body. The cover body 38 serves to protect the optoelectronic device 1 , for example, from mechanical forces from the outside. Furthermore, the cover body 38 serve for distributing and / or dissipating heat, which in the optoelectronic device 1 is produced. For example, the glass of the cover body 38 serve as protection against external influences and the metal layer of the cover body 38 can be used for distributing and / or discharging during operation of the optoelectronic component 1 serve arising heat.

6 shows a flowchart for a method for producing an optoelectronic component according to various embodiments. The process can be 600 according to the embodiments of the in the 1 . 2 . 3 . 4 and 5 described optoelectronic component can be performed.

The procedure 600 has a provision 620 a layered structure. The layer structure has the substrate with a first side and a second side opposite the first side. Furthermore, the layer structure has an electrically conductive layer on the first side of the substrate. In addition, the layer structure has a plurality of electrically conductive vias, which penetrate through the substrate, which electrically conductively connect the first side to the second side, and which are electrically conductively connected to the electrically conductive layer. The electrically conductive layer has at least a first region and a second region that is electrically insulated from the first region. In each case, the first region and the second region are electrically conductively connected to at least one electrically conductive through contact of the plurality of electrically conductive through contacts.

The procedure 600 also has a forming 640 an optoelectronic layer stack on or over at least the first region and the second region of the electrically conductive layer. In addition, the method has a forming 660 a further electrically conductive layer on or above the optoelectronic layer stack, so that in the first region a first optoelectronic component segment and in the second region a second optoelectronic component segment are formed. Furthermore, the method has a formation 680 the encapsulation structure on or over the further electrically conductive layer such that the first optoelectronic component segment and the second optoelectronic component segment are encapsulated together.

7 schematic plan views of an optoelectronic component according to various embodiments.

In 7A and 7B For example, various optoelectronic device designs according to various embodiments are illustrated. The optoelectronic components 710 . 720 are, for example, organic, light-emitting components.

The optoelectronic component 710 . 720 has a substrate 702 on, on which a plurality of optoelectronic component segments are arranged. The plurality of optoelectronic component segments are, for example, optoelectronic component segments 714 . 724 a first type and optoelectronic component segments 716 . 726 a second kind of are arranged. The first type of optoelectronic component segments 714 . 724 may be, for example, the second type of optoelectronic component segments 716 . 726 differ with respect to the color of the emitted light. For example, the optoelectronic component segments emit 714 . 724 the first type a yellow light and the optoelectronic component segments 716 . 726 the second kind a red light.

This makes possible an optoelectronic component which has a fine segmentation, for example for use in seamless wiper blinkers.

As in 7A is illustrated, the optoelectronic component segments 714 . 726 of the organic, optoelectronic component 700a Matrix-like on the substrate 702 be arranged. The optoelectronic component segments of the first kind 714 and the second kind 716 form, for example, rows, wherein the rows of optoelectronic component segments of the first kind 714 change with the lines of optoelectronic component segments of the second kind 716 from. In this case, all optoelectronic component segments may have the same shape.

In 7B is an organic, optoelectronic device 700b shown according to an embodiment. In this case, the optoelectronic component segments of the first type 724 are arranged in a series of columns and the optoelectronic component segments of the second type 726 as a whole-area line around the optoelectronic component segments of the first kind 724 are formed. In this case, the optoelectronic component segments of the first type 724 have a shape that is different from the shape of the optoelectronic component segments of the second type 726 ,

8th shows schematic sectional views of a method for producing an optoelectronic component according to various embodiments.

In the following, various modifications and configurations of the optoelectronic component will be described, wherein the above-described, basic features and functions of the optoelectronic component according to one of the embodiments described above can be incorporated analogously. Furthermore, the features and functions described below can be analogous to that in the 1 to 7 described, optoelectronic component to be transmitted or with the in the 1 to 7 described, optoelectronic component can be combined.

The method for producing an optoelectronic component 850 has an embodiment of providing a layered structure, which in the 8A to 8D will be shown. In this case, the layer structure, for example, an aluminum substrate 802 , several electrically conductive vias 804 and an electrically conductive layer 806 on (see 8E) , The through contacts 804 are with respect to the substrate 802 hermetically sealed. Furthermore, the vias 804 by means of the insulating layer 805 electrically insulated from the substrate, as in 8G which is a detailed schematic view of the 8D is illustrated.

In various embodiments, the substrate 802 with a first page 803a and a second side opposite the first side 803b a metal or a metal alloy or is formed therefrom. Here is the substrate 802 for example in the form of a film. Due to the material properties, metal foils are intrinsically close to the diffusion of oxygen and water. In addition, metal foils have a high thermal conductivity. This allows cost savings, since polymer films, for example, in order to achieve a sufficient diffusion resistance, have to be laboriously isolated by additional, for example, inorganic layer stacks. For example, the substrate 802 Aluminum on or consists of it. Alternatively or additionally, the substrate may be an electrolytically oxidized, for example an anodized metal substrate. The porous structure of the electrolytically oxidized metal material, for example, the anodized aluminum allows a good adhesion or toothing of the metal vias in the substrate. The substrate 802 can be made flexible by the small thickness of the starting material. The method for producing an optoelectronic component 850 thus provides a provision of a metal substrate 802 For example, an aluminum substrate 802 on, like in 8A is illustrated. The substrate 802 also has side surfaces 803c up, perpendicular to the first and second sides 803a . 803b are arranged.

As in 8B In various embodiments, holes are illustrated in the substrate 802 formed, which is the substrate 802 each from the first page 803a to the second page 803b penetrate. The holes can be like in one of the 1 described embodiments are formed. The holes thus lay inner surfaces 803d of the substrate free.

8C shows the formation of an insulating layer 805 , In this case, the formation of the insulating layer 805 For example, set up such that the substrate 802 on its entire surface, ie on the first page 803a , the second page 803b , the side surfaces 803c and the inner surfaces 803d by means of the insulating layer 805 is electrically isolated. Alternatively or additionally, areas may be on the surface of the substrate 802 for example, areas on the first page 803a and / or on the second page 803b of the substrate 802 free of insulating layer 805 be. As a result, busbars for distributing the electrical supply and / or electrical supply lines for the component-external electrical contacting of the optoelectronic component or the optoelectronic component segments can be formed. The areas of the substrate 802 , which is free of insulating layer 805 are, for example, are free of vias 805 , In other words: the electrically conductive surface areas of the substrate 802 are electrically isolated from the electrically conductive vias.

The insulating layer 805 is for example an oxide layer or an oxidic layer. The substrate 802 together with the insulating layer 805 may be referred to as an electrolytically oxidized, for example, anodized substrate. In the case of an oxide layer, the insulating layer is at least 95 % or 99 % or completely of an oxide, in particular of an oxide of the material of the metal foil. In the case of an oxide layer, further constituents such as sulfates or dyes or color pigments may be contained in the insulating layer. In the case of an oxide layer, the oxide content is preferably at least 50 % or 70 % or 85 % or 90 %. The percentages here relate in particular to a mass fraction. The insulating layer 805 can be formed by laser oxidation or anodization. In laser oxidation, a laser radiation is directed onto the metal foil, whereby the metal foil is melted on its surface, for example. This melting takes place in an atmosphere containing oxygen, so that an oxide layer or oxide layer forms on the surface. A thickness of the insulating layer is adjustable by an intensity and a duration of the laser irradiation. The anodization takes place, for example, in an electrolyte bath. Anodizing is also referred to as anodizing in the case of an aluminum foil. It is possible that a single or even several electrolyte baths are used to produce the insulating layer.

As in 8D Illustrated are the vias 804 by means of one of the 1 to 4 formed method described. The through contacts 804 can do it like in one of the 1 to 4 be described embodiments described. For example, the vias are 804 formed so that they fill the holes with an electrically conductive material. The holes are, for example, free of a supernatant with the electrically conductive material. In other words, the filling of the holes with the electrically conductive material is on the first page 803a and on the second page 803b of the substrate 802 limited to the dimensions of the holes.

8E shows a patterned application and back structuring of the electrically conductive layer 806 on or over the substrate 802 or on or over the insulating layer 805 such that the electrically conductive layer 806 at least a first area 808a and a second area 808b has, for example, a first area 808a , a second area 808b , a third area 808c , a fourth area 808d and a fifth area 808e having. The respective areas are each with at least one electrically conductive through contact 804 electrically connected. The areas of the electrically conductive layer 806 like in one of the 1 to 7 described embodiments may be designed. For example, the electrically conductive layer 806 an electrically conductive material extending from the electrically conductive material of the electrically conductive vias 804 different. Alternatively, the electrically conductive material of the electrically conductive layer 806 be the same material as the electrically conductive material of the electrically conductive vias 804 ,

In 8F is the optoelectronic component 850 illustrates that a functional layer stack 810 , another electrically conductive layer 812 and an encapsulation structure 814 having. The optoelectronic component 850 is in the 1 to 4 described, optoelectronic device 150 . 250 . 350 . 450 similarly constructed. That in the 8F described, optoelectronic device 850 but has an electrolytically oxidized, for example anodized substrate 802 on.

9 shows schematic sectional views of a method for producing an optoelectronic component according to various embodiments.

In the following, various modifications and configurations of the optoelectronic component will be described, wherein the above-described, basic features and functions of the optoelectronic component according to one of the embodiments described above can be incorporated analogously. Furthermore, the features and functions described below can be analogous to that in the 1 to 8th described, optoelectronic component to be transmitted or with the in the 1 to 8th described, optoelectronic component can be combined.

That in the 9 shown, optoelectronic component 950 is similar to the one in the 8th described, optoelectronic device 850 built up. That in the 9 shown, optoelectronic component 950 but has electrically conductive vias 904 on, whose electrically conductive material with protrusion on or above the first side 903a of the substrate 902 is trained.

10 shows schematic sectional views of a method for producing an optoelectronic component according to various embodiments.
In the following, various modifications and configurations of the optoelectronic component will be described, wherein the above-described, basic features and functions of the optoelectronic component according to one of the embodiments described above can be incorporated analogously. Furthermore, the features and functions described below can be analogous to that in the 1 to 8th described, optoelectronic component to be transmitted or with the in the 1 to 8th described, optoelectronic component can be combined.

That in the 10 shown, optoelectronic component 1050 is similar to the one in the 8th . 9 described, optoelectronic device 850 . 950 built up. The method for producing in the 10 shown, optoelectronic device is similar to that in the 8th . 9 described method performed.

In the 10 becomes the formation of the electrically conductive vias 1004 in a common step such as the application of the electrically conductive layer 1006 performed (see 8D) , The electrically conductive layer 1006 is restructured in a subsequent process step such that the electrically conductive layer 1006 at least a first area 1008a and a second area 1008b has, for example, a first area 1008a , a second area, a third area 1008c , a fourth area 1008D and a fifth area 1008E ,

• Ausbilden auf einer ersten Seite 103a, 203a, 303a, 403a, 803a, 903a, 1003a eines gemeinsamen Substrats 102, 202, 302, 402, 802, 902, 1002 und mit einer gemeinsamen Verkapselungsstruktur 114, 214, 314, 414, 814, 914, 1014 mindestens eines ersten optoelektronischen Bauelementsegments 118a, 218a, 318a, 418a, 818a, 918a, 1018a und eines neben dem ersten optoelektronischen Bauelementsegment 118a, 218a, 318a, 418a, 818a, 918a, 1018a angeordneten, zweiten optoelektronischen Bauelementsegments 118b, 118c, 118d, 218b, 218c, 218d, 318b, 318c, 318d, 418b, 418c, 818b, 818c, 818d, 918b, 918c, 918d, 1018b, 1018c, 1018d, wobei das Substrat 102, 202, 302, 402, 802, 902, 1002 eine der ersten Seite gegenüberliegende, zweite Seite 103b, 203b, 303b, 403b, 803b, 903b, 1003b aufweist, wobei das Substrat mehrere hermetisch dichte, elektrisch leitende Durchkontakte 104, 204, 304, 404, 804, 904, 1004 aufweist, welche jeweils die erste Seite 103a, 203a, 303a, 403a, 803a, 903a, 1003a mit der zweiten Seite 103b, 203b, 303b, 403b, 803b, 903b, 1003b elektrisch leitend verbinden, wobei das erste optoelektronische Bauelementsegment, das zweite optoelektronische Bauelementsegment und die Durchkontakte derart ausgebildet werden, dass das erste optoelektronische Bauelementsegment und das zweite optoelektronische Bauelementsegment unabhängig voneinander durch das Substrat 102, 202, 302, 402, 802, 902, 1002 mittels der Durchkontakte 104, 204, 304, 404, 804, 904, 1004 von der zweiten Seite 103b, 203b, 303b, 403b, 803b, 903b, 1003b des Substrats 102, 202, 302, 402, 802, 902, 1002 elektrisch kontaktierbar sind.

According to a first embodiment, a method 600 for producing an optoelectronic component 150 . 250 . 350 . 450 . 850 . 950 . 1050 on:

• Training on a first page 103a . 203a . 303a . 403a . 803a . 903a , 1003a of a common substrate 102 . 202 . 302 . 402 . 802 . 902 . 1002 and with a common encapsulation structure 114 . 214 . 314 . 414 . 814 . 914 . 1014 at least one first optoelectronic component segment 118a . 218a . 318a . 418a . 818a . 918a . 1018a and one next to the first optoelectronic component segment 118a . 218a . 318a . 418a . 818a . 918a . 1018a arranged, second optoelectronic component segment 118b . 118c . 118d . 218b . 218c . 218d . 318b . 318c . 318d . 418b . 418c . 818b . 818c . 818d . 918b . 918c . 918d . 1018b . 1018C . 1018d where the substrate 102 . 202 . 302 . 402 . 802 . 902 . 1002 one of the first page opposite, second page 103b . 203b . 303b . 403b . 803b . 903b , 1003b, wherein the substrate has a plurality of hermetically sealed, electrically conductive vias 104 . 204 . 304 . 404 . 804 . 904 . 1004 each having the first side 103a . 203a . 303a . 403a . 803a . 903a , 1003a with the second page 103b . 203b . 303b . 403b . 803b . 903b , 1003b electrically conductively connect, wherein the first optoelectronic component segment, the second optoelectronic component segment and the vias are formed such that the first optoelectronic component segment and the second optoelectronic component segment independently by the substrate 102 . 202 . 302 . 402 . 802 . 902 . 1002 by means of the vias 104 . 204 . 304 . 404 . 804 . 904 . 1004 from the second page 103b . 203b . 303b . 403b . 803b . 903b , 1003b of the substrate 102 . 202 . 302 . 402 . 802 . 902 . 1002 are electrically contacted.

• - Bereitstellen 620 einer Schichtenstruktur, wobei die Schichtenstruktur aufweist:
  • das Substrat 102, 202, 302, 402, 802, 902, 1002 mit der ersten Seite 103a, 203a, 303a, 403a, 803a, 903a, 1003a und der der ersten Seite gegenüberliegenden, zweiten Seite 103b, 203b, 303b, 403b, 803b, 903b, 1003b,
  • eine elektrisch leitende Schicht 106, 206, 306, 406, 806, 906, 1006 auf der ersten Seite 103a, 203a, 303a, 403a, 803a, 903a, 1003a des Substrats 102, 202, 302, 402, 802, 902, 1002 und
  • mehrere elektrisch leitende Durchkontakte 104, 204, 304, 404, 804, 904, 1004 durch das Substrat 102, 202, 302, 402, 802, 902, 1002, welche die erste Seite 103a, 203a, 303a, 403a, 803a, 903a, 1003a mit der zweiten Seite 103b, 203b, 303b, 403b, 803b, 903b, 1003b elektrisch leitend verbinden, und mit der elektrisch leitenden Schicht 106, 206, 306, 406, 806, 906, 1006 elektrisch leitend verbunden sind,
  • wobei die elektrisch leitende Schicht 106, 206, 306, 406, 806, 906, 1006 mindestens einen ersten Bereich 108a, 208a, 308a, 408a, 808a, 908a, 1008a und einen von dem ersten Bereich elektrisch isolierten zweiten Bereich 108b, 108c, 108d, 108e, 208b, 208c, 208d, 208e, 308b, 308c, 308d, 408b, 408c, 408d, 808b, 808c, 808d, 808e, 908b, 908c, 908d, 908e, 1008b, 1008c, 1008d, 1008e aufweist, wobei jeweils der erste Bereich 108a, 208a, 308a, 408a, 808a, 908a, 1008a und der zweite Bereich 108b, 108c, 108d, 108e, 208b, 208c, 208d, 208e, 308b, 308c, 308d, 408b, 408c, 408d, 808b, 808c, 808d, 808e, 908b, 908c, 908d, 908e, 1008b, 1008c, 1008d, 1008e mit mindestens einem elektrisch leitenden Durchkontakt 104, 204, 304, 404, 804, 904, 1004 der mehreren elektrisch leitenden Durchkontakte elektrisch leitend verbunden sind;
• - Ausbilden 640 eines optoelektronischen Schichtenstapels 110, 210, 310, 410, 810, 910, 1010 auf oder über mindestens dem ersten Bereich 108a, 208a, 308a, 408a, 808a, 908a, 1008a und dem zweiten Bereich 108b, 108c, 108d, 108e, 208b, 208c, 208d, 208e, 308b, 308c, 308d, 408b, 408c, 408d, 808b, 808c, 808d, 808e, 908b, 908c, 908d, 908e, 1008b, 1008c, 1008d, 1008e der elektrisch leitenden Schicht 106, 206, 306, 406, 806, 906, 1006;
• - Ausbilden 660 einer weiteren elektrisch leitenden Schicht 112, 212, 312, 412, 812, 912, 1012 auf oder über dem optoelektronischen Schichtenstapel 110, 210, 310, 410, 810, 910, 1010, sodass in dem ersten Bereich 108a, 208a, 308a, 408a, 808a, 908a, 1008a ein erstes optoelektronisches Bauelementsegment und in dem zweiten Bereich 108b, 108c, 108d, 108e, 208b, 208c, 208d, 208e, 308b, 308c, 308d, 408b, 408c, 408d, 808b, 808c, 808d, 808e, 908b, 908c, 908d, 908e, 1008b, 1008c, 1008d, 1008e ein zweites optoelektronisches Bauelementsegment gebildet werden;
• - Ausbilden 680 der Verkapselungsstruktur 114, 214, 314, 414, 814, 914, 1014 auf oder über der weiteren elektrisch leitenden Schicht 112, 212, 312, 412, 812, 912, 1012 derart, dass das erste optoelektronische Bauelementsegment und das zweite optoelektronische Bauelementsegment gemeinsam verkapselt werden.

According to a second embodiment, the method 600 According to the first embodiment, be configured such that the method comprises:

• - Provide 620 a layered structure, the layered structure comprising:
  • the substrate 102 . 202 . 302 . 402 . 802 . 902 . 1002 with the first page 103a . 203a . 303a . 403a . 803a . 903a , 1003a and the second page opposite the first page 103b . 203b . 303b . 403b . 803b . 903b , 1003b,
  • an electrically conductive layer 106 . 206 . 306 . 406 . 806 . 906 . 1006 on the first page 103a . 203a . 303a . 403a . 803a . 903a , 1003a of the substrate 102 . 202 . 302 . 402 . 802 . 902 . 1002 and
  • several electrically conductive vias 104 . 204 . 304 . 404 . 804 . 904 . 1004 through the substrate 102 . 202 . 302 . 402 . 802 . 902 . 1002 which is the first page 103a . 203a . 303a . 403a . 803a . 903a , 1003a with the second page 103b . 203b . 303b . 403b . 803b . 903b , 1003b electrically conductively connect, and with the electrically conductive layer 106 . 206 . 306 . 406 . 806 . 906 . 1006 are electrically connected,
  • wherein the electrically conductive layer 106 . 206 . 306 . 406 . 806 . 906 . 1006 at least a first area 108a . 208a . 308a . 408a . 808a . 908a . 1008a and a second region electrically isolated from the first region 108b . 108c . 108 d . 108e . 208b . 208c . 208d . 208e . 308b . 308c . 308d . 408b . 408c . 408d . 808b . 808c . 808d . 808e . 908b . 908c . 908D . 908e . 1008b . 1008c . 1008D . 1008E each having the first area 108a . 208a . 308a . 408a . 808a . 908a . 1008a and the second area 108b . 108c . 108 d . 108e . 208b . 208c . 208d . 208e . 308b . 308c . 308d . 408b . 408c . 408d . 808b . 808c . 808d . 808e . 908b . 908c . 908D . 908e . 1008b . 1008c . 1008D . 1008E with at least one electrically conductive through contact 104 . 204 . 304 . 404 . 804 . 904 . 1004 the plurality of electrically conductive vias are electrically connected;
• - Training 640 an optoelectronic layer stack 110 . 210 . 310 . 410 . 810 . 910 . 1010 on or over at least the first area 108a . 208a . 308a . 408a . 808a . 908a . 1008a and the second area 108b . 108c . 108 d . 108e . 208b . 208c . 208d . 208e . 308b . 308c . 308d . 408b . 408c . 408d . 808b . 808c . 808d . 808e . 908b . 908c . 908D . 908e . 1008b . 1008c . 1008D . 1008E the electrically conductive layer 106 . 206 . 306 . 406 . 806 . 906 . 1006 ;
• - Training 660 another electrically conductive layer 112 . 212 . 312 . 412 . 812 . 912 . 1012 on or above the optoelectronic layer stack 110 . 210 . 310 . 410 . 810 . 910 . 1010 so in the first area 108a . 208a . 308a . 408a . 808a . 908a . 1008a a first opto-electronic device segment and in the second region 108b . 108c . 108 d . 108e . 208b . 208c . 208d . 208e . 308b . 308c . 308d . 408b . 408c . 408d . 808b . 808c . 808d . 808e . 908b . 908c . 908D . 908e . 1008b . 1008c . 1008D . 1008E a second optoelectronic component segment are formed;
• - Training 680 the encapsulation structure 114 . 214 . 314 . 414 . 814 . 914 . 1014 on or over the further electrically conductive layer 112 . 212 . 312 . 412 . 812 . 912 . 1012 such that the first optoelectronic component segment and the second optoelectronic component segment are encapsulated together.

According to a third embodiment, the method 600 According to the first or second embodiment be configured such that the substrate 102 . 202 . 302 . 402 . 802 . 902 . 1002 made of a ceramic or a glass.

According to a fourth embodiment, the method 600 according to one of the first to third embodiments may be configured such that a plurality of holes in the substrate 102 . 202 . 302 . 402 . 802 . 902 . 1002 be formed, which is the substrate 102 . 202 . 302 . 402 . 802 . 902 . 1002 each from the first page 103a . 203a . 303a . 403a . 803a . 903a , 1003a to the second page 103b . 203b . 303b . 403b . 803b . 903b , 1003b penetrate, and the holes are filled with an electrically conductive material to the plurality of electrically conductive vias 104 . 204 . 304 . 404 . 804 . 904 . 1004 to build.

• - Bereitstellen 622 mehrerer elektrisch leitender Strukturen 203,
• - Vergießen 624 der mehreren elektrisch leitenden Strukturen 203 mit einem organischen Material, um das Substrat 102, 202, 302, 402, 802, 902, 1002 mit den dadurch durchdringenden mehreren elektrisch leitenden Durchkontakte 104, 204, 304, 404, 804, 904, 1004 zu bilden.

According to a fifth embodiment, the method 600 according to one of the first to third embodiments be configured such that the providing 620 the layer structure comprises:

• - Provide 622 several electrically conductive structures 203 .
• - Potting 624 of the plurality of electrically conductive structures 203 with an organic material to the substrate 102 . 202 . 302 . 402 . 802 . 902 . 1002 with the thus penetrating a plurality of electrically conductive vias 104 . 204 . 304 . 404 . 804 . 904 . 1004 to build.

• - Aufbringen 626 der elektrisch leitenden Schicht 106, 206, 306, 406, 806, 906, 1006 auf die erste Seite des Substrats 102, 202, 302, 402, 802, 902, 1002,
• - Rückstrukturieren 628 der elektrisch leitenden Schicht 106, 206, 306, 406, 806, 906, 1006 derart, dass mindestens der erste Bereich 108a, 208a, 308a, 408a, 808a, 908a, 1008a und der zweite Bereich 108b, 108c, 108d, 108e, 208b, 208c, 208d, 208e, 308b, 308c, 308d, 408b, 408c, 408d, 808b, 808c, 808d, 808e, 908b, 908c, 908d, 908e, 1008b, 1008c, 1008d, 1008e der elektrisch leitenden Schicht 106, 206, 306, 406, 806, 906, 1006 elektrisch isoliert voneinander gebildet werden.

According to a sixth embodiment, the method 600 according to one of the second to fifth embodiments be configured such that the providing 620 the layer structure further comprises

• - apply 626 the electrically conductive layer 106 . 206 . 306 . 406 . 806 . 906 . 1006 on the first side of the substrate 102 . 202 . 302 . 402 . 802 . 902 . 1002 .
• - restructure 628 the electrically conductive layer 106 . 206 . 306 . 406 . 806 . 906 . 1006 such that at least the first area 108a . 208a . 308a . 408a . 808a . 908a . 1008a and the second area 108b . 108c . 108 d . 108e . 208b . 208c . 208d . 208e . 308b . 308c . 308d . 408b . 408c . 408d . 808b . 808c . 808d . 808e . 908b . 908c . 908D . 908e . 1008b . 1008c . 1008D . 1008E the electrically conductive layer 106 . 206 . 306 . 406 . 806 . 906 . 1006 be formed electrically isolated from each other.

• ein strukturiertes Aufbringen 627 der elektrisch leitenden Schicht 106, 206, 306, 406, 806, 906, 1006 auf die erste Seite des Substrats derart, dass mindestens der erste Bereich 108a, 208a, 308a, 408a, 808a, 908a, 1008a und der zweite Bereich 108b, 108c, 108d, 108e, 208b, 208c, 208d, 208e, 308b, 308c, 308d, 408b, 408c, 408d, 808b, 808c, 808d, 808e, 908b, 908c, 908d, 908e, 1008b, 1008c, 1008d, 1008e der elektrisch leitenden Schicht 106, 206, 306, 406, 806, 906, 1006 elektrisch isoliert voneinander gebildet werden.

According to a seventh embodiment, the method 600 according to any one of the second to fifth embodiments, such that the providing 620 the layer structure further comprises

• a structured application 627 the electrically conductive layer 106 . 206 . 306 . 406 . 806 . 906 . 1006 on the first side of the substrate such that at least the first area 108a . 208a . 308a . 408a . 808a . 908a . 1008a and the second area 108b . 108c . 108 d . 108e . 208b . 208c . 208d . 208e . 308b . 308c . 308d . 408b . 408c . 408d . 808b . 808c . 808d . 808e . 908b . 908c . 908D . 908e . 1008b . 1008c . 1008D . 1008E the electrically conductive layer 106 . 206 . 306 . 406 . 806 . 906 . 1006 be formed electrically isolated from each other.

According to an eighth embodiment, the method 600 according to one of the first to sixth embodiments may be configured such that the substrate is an electrolytically oxidized metal substrate.

According to a ninth embodiment, the method 600 be configured according to one of the first to eighth embodiment such that the optoelectronic component 150 . 250 . 350 . 450 . 850 . 950 . 1050 an organic, light emitting device.

• - externes elektrisches Kontaktieren 650 der mindestens einen ersten Bauelementsegment und einen zweiten Bauelementsegment mittels eines Aufbringens der Leiterstruktur 322, 422 auf oder über die erste Seite 103a, 203a, 303a, 403a, 803a, 903a, 1003a und/oder die zweite Seite 103b, 203b, 303b, 403b, 803b, 903b, 1003b des Substrats 102, 202, 302, 402, 802, 902, 1002, wobei ein Bauelementsegment jeweils mittels mindestens eines elektrisch leitenden Durchkontakts 104, 204, 304, 404, 804, 904, 1004 mit mindestens einer Leiterbahn 320, 420 der Leiterstruktur 322, 422 elektrisch leitend verbunden wird.

According to a tenth embodiment, the method 600 be configured according to one of the first to ninth embodiment such that the optoelectronic component 150 . 250 . 350 . 450 . 850 . 950 . 1050 a ladder structure 322 . 422 with several tracks 320 . 420 for component-external electrical contacting, and
the method further comprises:

• - external electrical contact 650 the at least one first component segment and a second component segment by means of an application of the conductor structure 322 . 422 on or over the first page 103a . 203a . 303a . 403a . 803a . 903a , 1003a and / or the second page 103b . 203b . 303b . 403b . 803b . 903b , 1003b of the substrate 102 . 202 . 302 . 402 . 802 . 902 . 1002 , wherein a component segment in each case by means of at least one electrically conductive through contact 104 . 204 . 304 . 404 . 804 . 904 . 1004 with at least one track 320 . 420 the ladder structure 322 . 422 electrically connected.

According to an eleventh embodiment, the method 600 According to the tenth embodiment be configured such that the conductor tracks 320 . 420 the ladder structure 322 . 422 by means of an anisotropically conductive adhesive 316 with the several electrically conductive vias 104 . 204 . 304 . 404 . 804 . 904 . 1004 be electrically connected.

According to a twelfth embodiment, the method 600 According to the eleventh embodiment be configured such that the electrically conductive vias 104 . 204 . 304 . 404 . 804 . 904 . 1004 spaced from each other by a predetermined distance, wherein the predetermined distance with respect to the anisotropically conductive adhesive 316 the at least one first component segment is electrically insulated from the second component segment.

According to a thirteenth embodiment, the method 600 According to one of the tenth to twelfth embodiments be configured such that the optoelectronic component 150 . 250 . 350 . 450 . 850 . 950 . 1050 has an optically active region, wherein at least a part of the conductor structure 322 . 422 is arranged in the optically active region.

• - eine Schichtenstruktur aufweisend:
  • ein Substrat 102, 202, 302, 402, 802, 902, 1002 mit einer ersten Seite 103a, 203a, 303a, 403a, 803a, 903a, 1003a und einer der ersten Seite gegenüberliegenden, zweiten Seite 103b, 203b, 303b, 403b, 803b, 903b, 1003b, eine elektrisch leitende Schicht 106, 206, 306, 406, 806, 906, 1006 auf der ersten Seite 103a, 203a, 303a, 403a, 803a, 903a, 1003a des Substrats 102, 202, 302, 402, 802, 902, 1002, und
  • mehrere elektrisch leitende Durchkontakte 104, 204, 304, 404, 804, 904, 1004 durch das Substrat 102, 202, 302, 402, 802, 902, 1002, welche die erste Seite 103a, 203a, 303a, 403a, 803a, 903a, 1003a mit der zweiten Seite 103b, 203b, 303b, 403b, 803b, 903b, 1003b elektrisch leitend verbinden, und mit der elektrisch leitenden Schicht 106, 206, 306, 406, 806, 906, 1006 elektrisch leitend verbunden sind,
  • wobei die elektrisch leitende Schicht 106, 206, 306, 406, 806, 906, 1006 mindestens einen ersten Bereich 108a, 208a, 308a, 408a, 808a, 908a, 1008a und einen von dem ersten Bereich elektrisch isolierten zweiten Bereich 108b, 108c, 108d, 108e, 208b, 208c, 208d, 208e, 308b, 308c, 308d, 408b, 408c, 408d, 808b, 808c, 808d, 808e, 908b, 908c, 908d, 908e, 1008b, 1008c, 1008d, 1008e aufweist, wobei jeweils der erste Bereich 108a, 208a, 308a, 408a, 808a, 908a, 1008a und der zweite Bereich 108b, 108c, 108d, 108e, 208b, 208c, 208d, 208e, 308b, 308c, 308d, 408b, 408c, 408d, 808b, 808c, 808d, 808e, 908b, 908c, 908d, 908e, 1008b, 1008c, 1008d, 1008e mit mindestens einem elektrisch leitenden Durchkontakt 104, 204, 304, 404, 804, 904, 1004 der mehreren elektrisch leitenden Durchkontakte elektrisch leitend verbunden sind;
• - einen optoelektronischen Schichtenstapel 110, 210, 310, 410, 810, 910, 1010 auf oder über mindestens dem ersten Bereich 108a, 208a, 308a, 408a, 808a, 908a, 1008a und dem zweiten Bereich 108b, 108c, 108d, 108e, 208b, 208c, 208d, 208e, 308b, 308c, 308d, 408b, 408c, 408d, 808b, 808c, 808d, 808e, 908b, 908c, 908d, 908e, 1008b, 1008c, 1008d, 1008e der elektrisch leitenden Schicht 106, 206, 306, 406, 806, 906, 1006;
• - eine weitere elektrisch leitende Schicht 112, 212, 312, 412, 812, 912, 1012 auf oder über dem optoelektronischen Schichtenstapel 110, 210, 310, 410, 810, 910, 1010, wobei die weitere elektrisch leitende Schicht 112, 212, 312, 412, 812, 912, 1012 ausgebildet ist, sodass in dem ersten Bereich 108a, 208a, 308a, 408a, 808a, 908a, 1008a ein erstes optoelektronisches Bauelementsegment und in dem zweiten Bereich 108b, 108c, 108d, 108e, 208b, 208c, 208d, 208e, 308b, 308c, 308d, 408b, 408c, 408d, 808b, 808c, 808d, 808e, 908b, 908c, 908d, 908e, 1008b, 1008c, 1008d, 1008e ein zweites optoelektronisches Bauelementsegment gebildet sind;
• - eine Verkapselungsstruktur 114, 214, 314, 414, 814, 914, 1014 auf oder über der weiteren elektrisch leitenden Schicht 112, 212, 312, 412, 812, 912, 1012, wobei die Verkapselungsstruktur 114, 214, 314, 414, 814, 914, 1014 derart ausgebildet ist, dass das erste optoelektronische Bauelementsegment und das zweite optoelektronische Bauelementsegment gemeinsam verkapselt sind.

According to one 14 , Embodiment, an optoelectronic device 150 . 250 . 350 . 450 . 850 . 950 . 1050 exhibit:

• - a layered structure comprising:
  • a substrate 102 . 202 . 302 . 402 . 802 . 902 . 1002 with a first page 103a . 203a . 303a . 403a . 803a . 903a , 1003a and a second side opposite the first side 103b . 203b . 303b . 403b . 803b . 903b , 1003b, an electrically conductive layer 106 . 206 . 306 . 406 . 806 . 906 . 1006 on the first page 103a . 203a . 303a . 403a . 803a . 903a , 1003a of the substrate 102 . 202 . 302 . 402 . 802 . 902 . 1002 , and
  • several electrically conductive vias 104 . 204 . 304 . 404 . 804 . 904 . 1004 through the substrate 102 . 202 . 302 . 402 . 802 . 902 . 1002 which is the first page 103a . 203a . 303a . 403a . 803a . 903a , 1003a with the second page 103b . 203b . 303b . 403b . 803b . 903b , 1003b electrically conductively connect, and with the electrically conductive layer 106 . 206 . 306 . 406 . 806 . 906 . 1006 are electrically connected,
  • wherein the electrically conductive layer 106 . 206 . 306 . 406 . 806 . 906 . 1006 at least a first area 108a . 208a . 308a . 408a . 808a . 908a . 1008a and a second region electrically isolated from the first region 108b . 108c . 108 d . 108e . 208b . 208c . 208d . 208e . 308b . 308c . 308d . 408b . 408c . 408d . 808b . 808c . 808d . 808e . 908b . 908c . 908D . 908e . 1008b . 1008c . 1008D . 1008E each having the first area 108a . 208a . 308a . 408a . 808a . 908a . 1008a and the second area 108b . 108c . 108 d . 108e . 208b . 208c . 208d . 208e . 308b . 308c . 308d . 408b . 408c . 408d . 808b . 808c . 808d . 808e . 908b . 908c . 908D . 908e . 1008b . 1008c . 1008D . 1008E with at least one electrically conductive through contact 104 . 204 . 304 . 404 . 804 . 904 . 1004 the plurality of electrically conductive vias are electrically connected;
• - An optoelectronic layer stack 110 . 210 . 310 . 410 . 810 . 910 . 1010 on or over at least the first area 108a . 208a . 308a . 408a . 808a . 908a . 1008a and the second area 108b . 108c . 108 d . 108e . 208b . 208c . 208d . 208e . 308b . 308c . 308d . 408b . 408c . 408d . 808b . 808c . 808d . 808e . 908b . 908c . 908D . 908e . 1008b . 1008c . 1008D . 1008E the electrically conductive layer 106 . 206 . 306 . 406 . 806 . 906 . 1006 ;
• - Another electrically conductive layer 112 . 212 . 312 . 412 . 812 . 912 . 1012 on or above the optoelectronic layer stack 110 . 210 . 310 . 410 . 810 . 910 . 1010 , wherein the further electrically conductive layer 112 . 212 . 312 . 412 . 812 . 912 . 1012 is formed so that in the first area 108a . 208a . 308a . 408a . 808a . 908a . 1008a a first opto-electronic device segment and in the second region 108b . 108c . 108 d . 108e . 208b . 208c . 208d . 208e . 308b . 308c . 308d . 408b . 408c . 408d . 808b . 808c . 808d . 808e . 908b . 908c . 908D . 908e . 1008b . 1008c . 1008D . 1008E a second optoelectronic component segment are formed;
• - An encapsulation structure 114 . 214 . 314 . 414 . 814 . 914 . 1014 on or over the further electrically conductive layer 112 . 212 . 312 . 412 . 812 . 912 . 1012 , wherein the encapsulation structure 114 . 214 . 314 . 414 . 814 . 914 . 1014 is formed such that the first optoelectronic component segment and the second optoelectronic component segment are encapsulated together.

According to one 15 , Embodiment, the optoelectronic device 150 . 250 . 350 . 450 . 850 . 950 . 1050 according to the 14 , Embodiment be designed such that the optoelectronic component 150 . 250 . 350 . 450 . 850 . 950 . 1050 a ladder structure 322 . 422 with several tracks 320 . 420 for component-external electrical contacting, wherein the conductor structure 322 . 422 on the first page 103a . 203a . 303a . 403a . 803a . 903a , 1003a and / or the second page 103b . 203b . 303b . 403b . 803b . 903b , 1003b of the substrate 102 . 202 . 302 . 402 . 802 . 902 . 1002 is arranged, wherein a component segment in each case by means of at least one electrically conductive via 104 . 204 . 304 . 404 . 804 . 904 . 1004 with at least one track 320 . 420 the ladder structure 322 . 422 is electrically connected.

According to one 16 , Embodiment, the optoelectronic device 150 . 250 . 350 . 450 . 850 . 950 . 1050 according to the 14 , or 15 , Embodiment be designed such that the conductor tracks 320 . 420 the ladder structure 322 . 422 by means of an anisotropically conductive adhesive 316 with the several electrically conductive vias 104 . 204 . 304 . 404 . 804 . 904 . 1004 are electrically connected.

According to one 17 , Embodiment, the optoelectronic device 150 . 250 . 350 . 450 . 850 . 950 . 1050 according to one of 14 , to 16 , Embodiment be designed such that the substrate 102 . 202 . 302 . 402 . 802 . 902 . 1002 made of a ceramic or a glass.

According to one 18 , Embodiment, the optoelectronic device 150 . 250 . 350 . 450 . 850 . 950 . 1050 according to one of 14 , to 17 , Embodiment be designed such that the substrate 102 . 202 . 302 . 402 . 802 . 902 . 1002 is an electrolytically oxidized metal substrate.

According to one 19 , Embodiment, the optoelectronic device 150 . 250 . 350 . 450 . 850 . 950 . 1050 according to one of 14 , to 18 , Embodiment be designed such that the optoelectronic component 150 . 250 . 350 . 450 . 850 . 950 . 1050 an organic, light emitting device.

The invention is not limited to the specified embodiments. For example, a plurality of different juxtaposed or stacked optoelectronic components can be used in the form of a display.

references

1. [1]. JY Lee, SK Lee, and JH Park, "Fabrication of void-free copper filled through-glass-via for wafer level RF MEMS packaging," Electronics Letters, vol. 48, pp. 1076-1077, 2012 ,
2. [2]. I. SCHOTT North America. (2014, 01/20/2014). Ultra-thin glass. Available at: http://www.us.schott.com/advanced optics / english / products / wafers-and-thin-glass / glasswafer-and-substrates / ultra-thin-glass / index.html. Saeki. (2012) ,
3. [3]. H.C. USA. Glass Circuit Board (GCB) with Photosensitive Glass [Online]. available: http://www.hoyaoptics.com/pdf/photosensitive glass circuit board.pdf
4. [4]. Asahi Glass Makes It Easy to Handle 0.1mm-thick Glass Substrate.Available: http: //techon.nikkeibp.co.ip/english/NEWS EN / 20120602/221251 /
5. [5]. T. Akashi, Y. Yoshimura, and S. Higashiyama, "Deep reactive ion etching of pyrex glass using a bonded silicon wafer as an etching mask," in Micro Electro Mechanical Systems, 2005. MEMS 2005. 18th IEEE International Conference on, 2005 , pp. 520-523 ,
6. [6]. Li, T. Abe, and M. Esashi, "Smooth Surface Glass Etching with SF6 and Xe gases," Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol. 21, pp. 2545-2549, 2003 ,
7. [7]. X. Li, T. Abe, and M. Esashi, "Deep reactive ion etching of Pyrex glass using SF6 plasma," Sensors and Actuators A: Physical, vol. 87, pp. 139-145, 1/5/2001 ,
8. [8th]. A. Ben-Yarkar, "Morphology of femtosecond-laser ablated borosilicates glass surfaces" Applied Physics Letters, vol. 83, 2003 ,
9. [9]. A. Ben-Yarkar, "Femtosecond laser properties of borosilicate glass," Journal of Applied Physics, vol. 96, 2004 ,
10. [10]. Y.-T. Chen, "Excimer laser ablation of glass-based arrayed microstructures for biomedical, mechanical, and optical applications" Journal of Laser Applications, vol. 17, 2005 ,
11. [11]. D. Bhatt, K. Williams, DA Hutt, and PP Conway, "Process Optimization and Characterization of Excimer Laser Drilling of Microvias in Glass," in Electronics Packaging Technology Conference, 2007. EPTC 2007. 9th, 2007, pp. 196-201 ,
12. [12]. K. Bernd, "Drilling of glass by excimer laser mask projection technique," Journal of Laser Applications, vol. 12, pp. 189-193, 2000 ,
13. [13]. AA Tseng, Y.-T. Chen, and KJ Ma, "Fabrication of high aspect ratio microstructures using excimer lasers," Optics and Lasers in Engineering, vol. 41, pp. 827-847, 6 // 2004
14. [14]. Brusberg, M. Queisser, C. Gentsch, H. Schröder, and K.-D. Lang, Advances in CO2 Laser Drilling of Glass Substrates, Physics Procedia, vol. 39, pp. 548-555, // 2012 ,
15. [15]. CK Chung, HC Chang, TR Shih, SL Lin, EJ Hsiao, YS Chen, et al., "Water-assisted CO2 laser ablated glass and modified thermal bonding for capillary-driven bio-fluidic application," Biomedical Microdevices, vol. 12, pp. 107-114, 2010/02/01 2010 ,
16. [16]. S. Yu, Y. Daquan, H. Ran, D. Fengwei, S. Xiaofeng, and W. Lixi, "The Development of Low Cost Through Glass Via (TGV) Interposer using Additive Method for via Filling," in Electronic Packaging Technology and High Density Packaging (ICEPT-HDP), 2012 13th International Conference on, 2012, pp. 49-51 ,
17. [17]. O. Nukaga, T. Shioiri, S. Yamamoto, and T. Suemasu, "Glass Interposer with High-density Three-dimensional Structured TGV for 3D System Integration," in 3D Systems Integration Conference (3DIC), 2013 IEEE International, 2013, pp. 1-4 ,
18. [18]. S. Garner. Ultra-slim Flexible Glass Substrate for Display Applications [Online]. Available at: www.corning.com/WorkArea/downloadasset.aspx?id=50407

LIST OF REFERENCE NUMBERS

1, 150, 250, 350, 450, 850, 950, 1050

optoelectronic component

12, 102, 202, 302, 402, 802, 902, 1002

substratum

14

electrode layer

16, 18

Contact section

20, 23

electrode

21

electrical insulation barrier

22

optoelectronic layer structure

24

encapsulation

32, 34

contact area

36

Adhesive layer

38

covering

103a, 103b, 203a, 203b, 303a, 303b, 403a, 403b, 803a, 903a, 1003a, 803b, 903b, 1003b

substrate side

104, 104a, 104b, 104c, 104d, 104e, 204a, 204b, 204c, 204d, 204e, 304a, 304b, 304c, 304d, 304e, 404a, 404b, 404c, 404d,, 804, 904, 1004

electrically conductive through contact

106, 206, 306, 406, 806, 906, 1006

electrically conductive layer

108a, 108b, 108c, 108d, 108e, 208a, 208b, 208c, 208d, 208e, 308a, 308b, 308c, 308d, 308e, 408a, 408b, 408c, 408d, 408d, 808a, 908a, 1008a, 808b, 808c, 808d, 808e, 908b, 908c, 908d, 908e, 1008b, 1008c, 1008d, 1008e

Area

110, 210, 310, 410, 810, 910, 1010

Optoelectronic layer stack

112, 212, 312, 412, 812, 912, 1012

another electrically conductive layer

114, 214, 314, 414, 814, 914, 1014

Encapsulation

118a, 118b, 118c, 118d, 218a, 218b, 218c, 218d, 318a, 318b, 318c, 318d, 418a, 418b, 418c, 818a, 918a, 1018a, 818b, 818c, 818d, 918b, 918c, 918d, 1018b, 1018c, 1018d

optoelectronic component segment

203

electrically conductive structure

316

anisotropically conductive adhesive

320a, 320b, 320c, 320d, 320e, 422b

conductor path

322, 422

conductor structure

422a

circuit board

600

method

620, 640, 660, 680

step

QUOTES INCLUDE IN THE DESCRIPTION

This list of the documents listed by the applicant has been generated automatically and is included solely for the better information of the reader. The list is not part of the German patent or utility model application. The DPMA assumes no liability for any errors or omissions.

Cited non-patent literature

• J. Y. Lee, S.K. Lee, and J.H. Park, "Fabrication of void-free copper-filled-through-glass-via-for-wafer-level RF MEMS packaging," Electronics Letters, vol. 48, pp. 1076-1077, 2012 [0151]
• I. SCHOTT North America. (2014, 01/20/2014). Ultra-thin glass. Available at: http://www.us.schott.com/advanced optics / english / products / wafers-and-thin-glass / glasswafer-and-substrates / ultra-thin-glass / index.html. Saeki. (2012) [0151]
• T. Akashi, Y. Yoshimura, and S. Higashiyama, "Deep reactive ion etching of pyrex glass using a bonded silicon wafer as an etching mask," in Micro Electro Mechanical Systems, 2005. MEMS 2005. 18th IEEE International Conference on, 2005 , pp. 520-523 [0151]
• Li, T. Abe, and M. Esashi, "Smooth Surface Glass Etching with SF6 and Xe gases," Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol. 21, pp. 2545 2525, 2003 [0151]
• X. Li, T. Abe, and M. Esashi, "Deep reactive ion etching of Pyrex glass using SF6 plasma," Sensors and Actuators A: Physical, vol. 87, pp. 139-145, 1/5/2001 [0151]
• A. Ben-Yarkar, "Morphology of femtosecond-laser ablated borosilicates glass surfaces" Applied Physics Letters, vol. 83, 2003 [0151]
• A. Ben-Yarkar, "Femtosecond laser properties of borosilicate glass," Journal of Applied Physics, vol. 96, 2004 [0151]
• Y.-T. Chen, "Excimer laser ablation of glass-based arrayed microstructures for biomedical, mechanical, and optical applications" Journal of Laser Applications, vol. 17, 2005 [0151]
• D. Bhatt, K. Williams, D.A. Hutt, and P. P. Conway, "Process Optimization and Characterization of Excimer Laser Drilling of Microvias in Glass," in Electronics Packaging Technology Conference, 2007. EPTC 2007. 9th, 2007, pp. 196-201 [0151]
• K. Bernd, "Drilling of glass by excimer laser mask projection technique," Journal of Laser Applications, vol. 12, pp. 189-193, 2000 [0151]
• A.A. Tseng, Y.-T. Chen, and K.J. Ma, "Fabrication of high aspect ratio microstructures using excimer lasers," Optics and Lasers in Engineering, vol. 41, pp. 827-847, 6 // 2004 [0151]
• Brusberg, M. Queisser, C. Gentsch, H. Schröder, and K.-D. Lang, Advances in CO2 Laser Drilling of Glass Substrates, Physics Procedia, vol. 39, pp. 548-555, // 2012 [0151]
• C.K. Chung, H.C. Chang, T.R. Shih, S.L. Lin, E.J. Hsiao, Y.S.Chen, et al., "Water-assisted CO2 laser ablated glass and modified thermal bonding for capillary-driven bio-fluidic application," Biomedical Microdevices, vol. 12, pp. 107-114, 2010/02/01 2010 [0151]
• S. Yu, Y. Daquan, H. Ran, D. Fengwei, S. Xiaofeng, and W. Lixi, "The Development of Low Cost Through Glass Via (TGV) Interposer using Additive Method for via Filling," in Electronic Packaging Technology and High Density Packaging (ICEPT-HDP), 2012 13th International Conference on, 2012, pp. 49-51 [0151]
• O. Nukaga, T. Shioiri, S. Yamamoto, and T. Suemasu, "Glass Interposer with High-density Three-dimensional Structured TGV for 3D System Integration," in 3D Systems Integration Conference (3DIC), 2013 IEEE International, 2013, pp. 1-4 [0151]
• S. Garner. Ultra-slim Flexible Glass Substrate for Display Applications [Online]. Available at: www.corning.com/WorkArea/downloadasset.aspx?id=50407 [0151]

Claims (16)

A method (600) of fabricating an optoelectronic device (150, 250, 350, 450, 850, 950, 1050), the method (600) comprising: Forming on a first side (103a, 203a, 303a, 403a, 803a, 903a, 1003a) a common substrate (102, 202, 302, 402, 802, 902, 1002) and having a common encapsulation structure (114, 214, 314, 414, 814, 914, 1014): at least one first optoelectronic component segment (118a, 218a, 318a, 418a, 818a, 918a, 1018a) and a second optoelectronic component segment (118b, 118c, 118d, 218b, 218c, 218d, 318b, 318c , 318d, 418b, 418c, 818b, 818c, 818d, 918b, 918c, 918d, 1018b, 1018c, 1018d) adjacent to the first optoelectronic component segment (118a, 218a, 318a, 418a, 818a, 918a, 1018a), wherein the substrate (102, 202, 302, 402, 802, 902, 1002) has a second side (103b, 203b, 303b, 403b, 803b, 903b, 1003b) opposite the first side, wherein the substrate has a plurality of hermetically sealed, electrically conductive vias (104, 204, 304, 404, 804, 904, 1004) which each electrically connect the first side to the second side, wherein the first optoelectronic component segment (118a, 218a, 318a, 418a, 818a, 918a, 1018a), the second optoelectronic component segment (118b, 118c, 118d, 218b, 218c, 218d, 318b, 318c, 318d, 418b, 418c, 818b, 818c, 818d, 918b, 918c, 918d, 1018b, 1018c, 1018d) and the vias are formed such that the first optoelectronic device segment (118a, 218a, 318a, 418a, 818a, 918a, 1018a) and the second optoelectronic device segment (118b , 118c, 118d, 218b, 218c, 218d, 318b, 318c, 318d, 418b, 418c, 818b, 818c, 818d, 918b, 918c, 918d, 1018b, 1018c, 1018d) independently by means of the vias from the second side (103b , 203b, 303b, 403b, 803b, 903b, 1003b) of the substrate (102, 202, 302, 402, 802, 902, 1002) are electrically contactable. Method (600) according to Claim 1 , the method comprising: - providing (620) a layer structure, the layer structure comprising: the substrate (102, 202, 302, 402, 802, 902, 1002) having the first side (103a, 203a, 303a, 403a, 803a, 903a, 1003a) and the first side opposite the second side (103b, 203b, 303b, 403b, 803b, 903b, 1003b), an electrically conductive layer (106, 206, 306, 406, 806, 906, 1006) on the first side (103a, 203a, 303a, 403a, 803a, 903a, 1003a) of the substrate (102, 202, 302, 402, 802, 902, 1002) and a plurality of electrically conductive vias (104, 204, 304, 404, 804, 904, 1004) through the substrate (102, 202, 302, 402, 802, 902, 1002) having the first side (103a, 203a, 303a, 403a, 803a, 903a, 1003a) with the second side (103b, 203b , 303b, 403b, 803b, 903b, 1003b) and are electrically conductively connected to the electrically conductive layer (106, 206, 306, 406, 806, 906, 1006), the electrically conductive layer (106, 206 , 306, 406, 806, 9 06, 1006) at least a first region (108a, 208a, 308a, 408a, 808a, 908a, 1008a) and a second region (108b, 108c, 108d, 108e, 208b, 208c, 208d, 208e, 308b, 308c, 308d, 408b, 408c, 408d, 808b, 808c, 808d, 808e, 908b, 908c, 908d, 908e, 1008b, 1008c, 1008d, 1008e), wherein in each case the first region (108a, 208a, 308a, 408a, 808a, 908a, 1008a) and the second region (108b, 108c, 108d, 108e, 208b, 208c, 208d, 208e, 308b, 308c, 308d, 408b, 408d, 808b, 808c, 808d, 808e, 908b, 908c, 908d, 908e, 1008b, 1008c, 1008d, 1008e) is electrically conductively connected to at least one electrically conductive via (104, 204, 304, 404, 804, 904, 1004) of the plurality of electrically conductive vias; Forming (640) an optoelectronic layer stack (110, 210, 310, 410, 810, 910, 1010) on or over at least the first region (108a, 208a, 308a, 408a, 808a, 908a, 1008a) and the second region ( 108b, 108c, 108d, 108e, 208b, 208c, 208d, 208e, 308b, 308c, 308d, 408b, 408c, 408d, 808b, 808c, 808d, 808e, 908b, 908c, 908d, 908e, 1008b, 1008c, 1008d, 1008e) of the electrically conductive layer (106, 206, 306, 406, 806, 906, 1006); Forming (660) a further electrically conductive layer (112, 212, 312, 412, 812, 912, 1012) on or above the optoelectronic layer stack (110, 210, 310, 410, 810, 910, 1010) such that in the first region (108a, 208a, 308a, 408a, 808a, 908a, 1008a) comprises a first optoelectronic component segment (118a, 218a, 318a, 418a, 818a, 918a, 1018a) and in the second region (108b, 108c, 108d, 108e, 208b, 208c, 208d, 208e, 308b, 308c, 308d, 408b, 408c, 408d, 808b, 808c, 808d, 808e, 908b, 908c, 908d, 908e, 1008b, 1008c, 1008d, 1008e) comprises a second optoelectronic device segment (118b , 118c, 118d, 218b, 218c, 218d, 318b, 318c, 318d, 418b, 418c, 818b, 818c, 818d, 918b, 918c, 918d, 1018b, 1018c, 1018d); - Forming (680) of the encapsulation structure (114, 214, 314, 414, 814, 914, 1014) on or above the further electrically conductive layer (112, 212, 312, 412, 812, 912, 1012) such that the first optoelectronic component segments (118a, 218a, 318a, 418a, 818a, 918a, 1018a) and the second optoelectronic component segment (118b, 118c, 118d, 218b, 218c, 218d, 318b, 318c, 318d, 418b, 418c, 818b, 818c, 818d , 918b, 918c, 918d, 1018b, 1018c, 1018d) are encapsulated together. Method (600) according to Claim 1 or 2 wherein the substrate (102, 202, 302, 402, 802, 902, 1002) is made of a ceramic or a glass. Method (600) according to one of Claims 1 to 3 wherein a plurality of holes are formed in the substrate (102, 202, 302, 402, 802, 902, 1002), which form the substrate (102, 202, 302, 402, 802, 902, 1002) respectively from the first side (103a , 203a, 303a, 403a, 803a, 903a, 1003a) to the second side (103b, 203b, 303b, 403b, 803b, 903b, 1003b), and the holes are filled with an electrically conductive material to form the plurality of electrically conductive ones Vias (104, 204, 304, 404, 804, 904, 1004) to form. Method (600) according to one of Claims 1 to 3 wherein providing (620) the layered structure comprises: - providing (622) a plurality of electrically conductive structures (203), - potting (624) the plurality of electrically conductive structures (203) with an organic material to form the substrate (102, 202, 302, 402, 802, 902, 1002) with the plurality of electrically conductive vias (104, 204, 304, 404, 804, 904, 1004) penetrating therethrough. Method (600) according to one of Claims 2 to 5 wherein providing (620) the layered structure further comprises: - applying (626) the electrically conductive layer (106, 206, 306, 406, 806, 906, 1006) to the first side of the substrate (102, 202, 302, 402 , 802, 902, 1002), - back structuring (628) the electrically conductive layer (106, 206, 306, 406, 806, 906, 1006) such that at least the first region (108a, 208a, 308a, 408a, 808a, 908a, 1008a) and the second region (108b, 108c, 108d, 108e, 208b, 208c, 208d, 208e, 308b, 308c, 308d, 408b, 408d, 808b, 808c, 808d, 808e, 908b, 908c, 908d, 908e , 1008b, 1008c, 1008d, 1008e) of the electrically conductive layer (106, 206, 306, 406, 806, 906, 1006) are formed electrically isolated from each other. Method (600) according to one of Claims 2 to 5 wherein providing (620) the layered structure further comprises patterning (627) the electrically conductive layer (106, 206, 306, 406, 806, 906, 1006) on the first side of the substrate such that at least the first region (108a, 208a, 308a, 408a, 808a, 908a, 1008a) and the second region (108b, 108c, 108d, 108e, 208b, 208c, 208d, 208e, 308b, 308c, 308d, 408b, 408c, 408d, 808b, 808c, 808d, 808e, 908b, 908c, 908d, 908e, 1008b, 1008c, 1008d, 1008e) of the electrically conductive layer (106, 206, 306, 406, 806, 906, 1006) are formed electrically isolated from each other. Method (600) according to one of Claims 1 to 7 wherein the substrate (102, 202, 302, 402, 802, 902, 1002) is an electrolytically oxidized metal substrate. Method (600) according to one of Claims 1 to 8th wherein the optoelectronic component (150, 250, 350, 450, 850, 950, 1050) is an organic, light emitting device. Method (600) according to one of Claims 1 to 9 wherein the optoelectronic component (150, 250, 350, 450, 850, 950, 1050) has a conductor pattern (322, 422) with a plurality of conductor tracks (320, 420) for component-external electrical contacting, and the method further comprises: external electrical contacting (650) of the at least one first device segment (118a, 218a, 318a, 418a, 818a, 918a, 1018a) and the second device segment (118b, 118c, 118d, 218b, 218c, 218d, 318b, 318c, 318d, 418b , 418c, 818b, 818c, 818d, 918b, 918c, 918d, 1018b, 1018c, 1018d) by applying the conductor pattern (318, 418) to or via the first side (103a, 203a, 303a, 403a, 803a, 903a, 1003a) and / or the second side (103b, 203b, 303b, 403b, 803b, 903b, 1003b) of the substrate (102, 202, 302, 402, 802, 902, 1002), wherein a device segment (118a, 118b, 118c , 118d, 218a, 218b, 218c, 218d, 318a, 318b, 318c, 318d, 481a, 418b, 418c, 818b, 818c, 818d, 918b, 918c, 918d, 1018b, 1018c, 1018d) each by means of at least one elek trisch conductive via (104, 204, 304, 404, 804, 904, 1004) with at least one conductor track (320, 420) of the conductor pattern (322, 422) is electrically connected. Method (600) according to Claim 10 , wherein the conductor tracks (320, 420) of the conductor structure (322, 422) by means of an anisotropically conductive adhesive (316) with the plurality of electrically conductive vias (104, 204, 304, 404, 804, 904, 1004) are electrically connected. Method (600) according to Claim 11 wherein the electrically conductive vias (104, 204, 304, 404, 804, 904, 1004) are spaced apart from each other by a predetermined distance, wherein the predetermined distance relative to the anisotropically conductive adhesive (316) is the at least one first device segment (118a, 218a , 318a, 418a, 818a, 918a, 1018a) from the second component segment (118b, 118c, 118d, 218b, 218c, 218d, 318b, 318c, 318d, 418b, 418c, 818b, 818c, 818d, 918b, 918c, 918d, 1018b, 1018c, 1018d) are electrically isolated. Method (600) according to one of Claims 10 to 12 wherein the optoelectronic component (150, 250, 350, 450, 850, 950, 1050) has an optically active region, wherein at least a part of the conductor structure (322, 422) is arranged in the optically active region. Optoelectronic device (150, 250, 350, 450, 850, 950, 1050) comprising: - having a layered structure: a substrate (102, 202, 302, 402, 802, 902, 1002) having a first side (103a, 203a, 303a, 403a, 803a, 903a, 1003a) and a second side (103b, 203b) opposite the first side 303b, 403b, 803b, 903b, 1003b), an electrically conductive layer (106, 206, 306, 406, 806, 906, 1006) on the first side (103a, 203a, 303a, 403a, 803a, 903a, 1003a) of the substrate (102, 202, 302, 402, 802 , 902, 1002), and a plurality of electrically conductive vias (104, 204, 304, 404, 804, 904, 1004) through the substrate (102, 202, 302, 402, 802, 902, 1002) connecting the first side (103a, 203a, 303a, 403a , 803a, 903a, 1003a) are electrically conductively connected to the second side (103b, 203b, 303b, 403b, 803b, 903b, 1003b), and to the electrically conductive layer (106, 206, 306, 406, 806, 906, 1006 ) are electrically conductively connected, wherein the electrically conductive layer (106, 206, 306, 406, 806, 906, 1006) comprises at least a first region (108a, 208a, 308a, 408a, 808a, 908a, 1008a) and a second region electrically isolated from the first region ( 108b, 108c, 108d, 108e, 208b, 208c, 208d, 208e, 308b, 308c, 308d, 408b, 408c, 408d, 808b, 808c, 808d, 808e, 908b, 908c, 908d, 908e, 1008b, 1008c, 1008d, 1008e), each of the first region (108a, 208a, 308a, 408a, 808a, 908a, 1008a) and the second region (108b, 108c, 108d, 108e, 208b, 208c, 208d, 208e, 308b, 308c, 308d , 408b, 408c, 408d, 808b, 808c, 808d, 808e, 908b, 908c, 908d, 908e, 1008b, 1008c, 1008d, 1008e) having at least one electrically conductive via (104, 204, 304, 404, 804, 904, 1004) of the plurality of electrically conductive vias are electrically connected; an optoelectronic layer stack (110, 210, 310, 410, 810, 910, 1010) on or over at least the first region (108a, 208a, 308a, 408a, 808a, 908a, 1008a) and the second region (108b, 108c, 108d, 108e, 208b, 208c, 208d, 208e, 308b, 308c, 308d, 408b, 408c, 408d, 808b, 808c, 808d, 808e, 908b, 908c, 908d, 908e, 1008b, 1008c, 1008d, 1008e) conductive layer (106, 206, 306, 406, 806, 906, 1006); - Another electrically conductive layer (112, 212, 312, 412, 812, 912, 1012) on or above the optoelectronic layer stack (110, 210, 310, 410, 810, 910, 1010), wherein the further electrically conductive layer ( 112, 212, 312, 412, 812, 912, 1012), such that a first optoelectronic component segment (118a, 218a, 318a, 418a, 818a, 918a, 1018a) and in the second region (108b, 108c, 108d, 108e, 208b, 208c, 208d, 208e, 308b, 308c, 308d, 408b, 408c, 408d, 808b, 808c, 808d, 808e, 908b, 908c, 908d, 908e, 1008b, 1008c, 1008d, 1008e) comprises a second optoelectronic component segment (118b, 118c, 118d, 218b, 218c, 218d, 318b, 318c, 318d, 418b, 418c, 818b, 818c, 818d, 918b, 918c , 918d, 1018b, 1018c, 1018d) are formed; an encapsulation structure (114, 214, 314, 414, 814, 914, 1014) on or above the further electrically conductive layer (112, 212, 312, 412, 812, 912, 1012), the encapsulation structure (114, 214, 314, 414, 814, 914, 1014) is formed such that the first optoelectronic component segment (118a, 218a, 318a, 418a, 818a, 918a, 1018a) and the second optoelectronic component segment (118b, 118c, 118d, 218b, 218c, 218d, 318b, 318c, 318d, 418b, 418c, 818b, 818c, 818d, 918b, 918c, 918d, 1018b, 1018c, 1018d) are encapsulated together. Optoelectronic device (150, 250, 350, 450, 850, 950, 1050) according to Claim 13 in that the optoelectronic component (150, 250, 350, 450, 850, 950, 1050) has a conductor structure (322, 422) with a plurality of conductor tracks (320, 420) for component-external electrical contacting, wherein the conductor structure (322, 422 ) on the first side (103a, 203a, 303a, 403a, 803a, 903a, 1003a) and / or the second side (103b, 203b, 303b, 403b, 803b, 903b, 1003b) of the substrate (102, 202, 302, 402, 802, 902, 1002), wherein a component segment (118a, 118b, 118c, 118d, 218a, 218b, 218c, 218d, 318a, 318b, 318c, 318d, 418a, 418b, 418c, 818a, 918a, 1018a , 818b, 818c, 818d, 918b, 918c, 918d, 1018b, 1018c, 1018d) in each case by means of at least one electrically conductive through contact (104, 204, 304, 404, 804, 904, 1004) having at least one conductor track (320, 420). the conductor structure (322, 422) is electrically connected. Optoelectronic device (150, 250, 350, 450, 850, 950, 1050) according to Claim 14 , wherein the conductor tracks (320, 420) of the conductor structure (322, 422) by means of an anisotropically conductive adhesive (316) with the plurality of electrically conductive vias (104, 204, 304, 404, 804, 904, 1004) are electrically connected.

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