WO2014049046A1

WO2014049046A1 - Method for ascertaining the permeability of a dielectric layer of an optoelectronic component; apparatus for ascertaining the permeability of a dielectric layer of an optoelectronic component; optoelectronic component and method for producing an optoelectronic component

Info

Publication number: WO2014049046A1
Application number: PCT/EP2013/070054
Authority: WO
Inventors: Andrew Ingle; Marc Philippens; Tilman Schlenker
Original assignee: Osram Opto Semiconductors Gmbh
Priority date: 2012-09-28
Filing date: 2013-09-26
Publication date: 2014-04-03
Also published as: DE102012109228A1

Abstract

Various embodiments provide a method (300) for ascertaining the permeability of a dielectric layer (108) of an optoelectronic component, said method (300) involving: measurement of an electric current level through a dielectric layer (108); and ascertainment of the permeability of the dielectric layer (108) from the measured current level, wherein the measured electric current level is a function of the permeability of the dielectric layer (108) for at least water and/or oxygen.

Description

description

Method for determining the permeability of a

dielectric layer of an optoelectronic component; Device for determining the permeability of a

dielectric layer of an optoelectronic component; Optoelectronic Component and Method for Producing an Optoelectronic Component Various embodiments relate to a method for determining the permeability of a dielectric layer of an optoelectronic component, a device for determining the permeability of a dielectric layer of an optoelectronic component, an optoelectronic component and a method for producing a

optoelectronic component.

Organic-based optoelectronic components,

For example, an organic light-emitting diodes (organic light emitting diode - OLED) or an organic solar cell, find increasingly widespread application.

An OLED can, for example, two electrodes, for example an anode and a cathode, with an organic

have functional layer system in between. The organic functional layer system may comprise one or more emitter layers in which

electromagnetic radiation is generated, for example, one or more charge carrier pair generation layer structure (s) each of two or more

Charge pair generation charge generating layer (CGL) and one or more electron block layers, also referred to as hole transport layer (HT), and one or more hole block layers, also referred to as an electron transport layer (E) ("electron transport layer" - ETL) to direct the flow of current. The organic functional layer system or at least a part thereof may comprise organic substances and / or organic mixtures. Organic substances and / or

However, organic mixtures may be susceptible to harmful environmental influences. Under a harmful

Environmental influences can be understood to mean all influences which can potentially lead to degradation or aging, for example crosslinking or crystallization, of organic substances or organic substance mixtures and thus

For example, limit the operating time of the OLED. A harmful environmental influence can be, for example, a substance harmful to organic substances or organic substance mixtures, for example oxygen and / or water.

To protect against harmful environmental influences is the

organic, electronic component usually

encapsulated. When encapsulating an OLED usually the organic functional layer structure and the

Electrodes with one for harmful environmental influences

surrounded impermeable encapsulation layer, usually a thin film impermeable to water and

Oxygen is. The encapsulation layer for thin-film encapsulated organic, optoelectronic device, such as organic

LEDs should be absolutely defect-free. For example, even a microscopic defect or a diffusion channel along a grain boundary in this encapsulation layer can lead to a defect of the entire OLED. As a result, non-luminous, circular dots (so-called "black spots") can form in the field of view of the OLED by means of moisture, which can grow over time.

So far, the thin-film encapsulation of an organic optoelectronic component, for example an OLED, tested under great technical effort, ie it lacks a simple quality control of the encapsulation layer.

In order to minimize the potential damage to an OLED, in a conventional method, the

Encapsulation layer a glass cover by means of a

Epoxy resin adhesive laminated.

In another conventional method, a

Glass cover, for example by means of a frit (glass frit bonding / glass soldering / seal glass bonding) applied by means of a conventional glass solder in the geometric edge regions on the encapsulation layer.

By means of the glass cover, however, only the

Speed can be reduced in the example

Water diffuses into the OLED, so that, for example, a defect in the encapsulation layer of an OLED leads only slowed to a visible defect.

In various embodiments, a method for determining the permeability of a dielectric layer of an optoelectronic component, a device for determining the permeability of a dielectric layer of an optoelectronic component, an optoelectronic component and a method for producing a

Optoelectronic device provided with which it is possible to measure leakage currents by thin film encapsulation of organic, optoelectronic devices non-destructive. This allows organic, optoelectronic

Components are detected and sorted out, which otherwise over time at the customer due to in-diffusion of

Moisture would form visible damage.

In the context of this description, under an organic substance, irrespective of the respective physical state, in chemically uniform form present, characterized by characteristic physical and chemical properties compound of the carbon are understood. Furthermore, in the context of this description, an inorganic substance may be one in a chemically uniform form, regardless of the particular state of matter

present, characterized by characteristic physical and chemical properties of the compound without

Carbon or simple carbon compound can be understood. In the context of this description, an organic-inorganic substance (hybrid substance) can be a

irrespective of the particular state of aggregation, in chemically uniform form, characterized by characteristic physical and chemical properties, of compounds containing carbon and free of carbon. In the context of this description, the term "substance" encompasses all substances mentioned above, for example an organic substance, an inorganic substance, and / or a hybrid substance

Mixture be understood something that consists of two or more different ingredients, whose

For example, components are very finely divided. As a class of substance is a substance or mixture of one or more organic substance (s), one or more inorganic substance (s) or one or more hybrid

Understand substance (s). The term "material" can be used synonymously with the term "substance". In the context of this description, a first substance or a first substance mixture may be equal to a second substance or a second substance mixture, if the chemical and

physical properties of the first substance or first substance mixture identical to the chemical and

physical properties of the second substance or of the second substance mixture. In the context of this description, a first substance or a first substance mixture may be similar to a second substance or a second substance mixture if the first substance or the first substance mixture and the second substance or the second substance mixture

Mixture of approximately equal stoichiometric

Composition, approximately the same chemical properties and / or approximately the same physical properties

has at least one size such as density, refractive index, chemical resistance or the like.

For example, crystalline S1O2 (quartz) as equal to amorphous S1O2 (silica glass) and may be considered similar to SiO _x with respect to the stoichiometric composition. However, with respect to the refractive index

crystalline S1O2 may be different from SiO _x or amorphous SiO 2. By adding additives, for example in the form of dopants, for example, amorphous SiO 2 may have the same or a similar refractive index as

crystalline S1O2, however, then with respect to the chemical

Composition be different from crystalline S1O2.

The reference quantity in which a first substance resembles a second substance can be explicitly stated or can be derived from the

Context, for example, from the common

Properties of a group of substances or mixtures of substances.

The dimensional stability of a geometrically shaped substance can be understood on the basis of the modulus of elasticity and the viscosity.

A fabric may in various embodiments be dimensionally stable, i. be considered in this sense as hard and / or firm, if the substance has a viscosity in one

2 23

Range from about 5 x 10 6 Pa s to about 1 x 10 5 Pa s and a modulus of elasticity in a range of about 6 12

1 x 10 Pa to about 1 x 10 Pa, since the fabric may show a viscoelastic to brittle behavior after forming a geometric shape. A fabric can be considered malleable, i. be considered in this sense as soft and / or liquid, if the substance is a

-2

Viscosity m in a range of about 1 x 10 Pa-s to

2

about 5 x 10 Pa-s or a modulus of elasticity to about

6

1 x 10 Pa, since any change in the geometric shape of the substance to an irreversible, plastic

Change in the geometric shape of the substance can lead.

A dimensionally stable substance can be added by adding

Plasticizers, for example, solvents, or increasing the temperature become plastically moldable, i. be liquefied.

A plastically malleable substance can by means of a

Crosslinking reaction, withdrawal of plasticizers and / or heat dimensionally stable, i. be solidified.

The solidification of a substance or mixture of substances, i. of the

Transition of a substance from malleable to dimensionally stable, one can

Changing the viscosity, for example, increasing the viscosity from a first viscosity value to a second viscosity value. The second viscosity value may be many times greater than the first viscosity value, for example in a range of about 10 to

6

about 10. The fabric may be formable at the first viscosity and dimensionally stable at the second viscosity.

The solidification of a substance or mixture of substances, i. The transition of a substance from malleable to dimensionally stable may involve a process or a process in which

low molecular weight constituents are removed from the substance or mixture of substances, for example solvent molecules or low molecular weight, uncrosslinked constituents of the substance or of the substance mixture, for example a drying or chemical crosslinking of the substance or of the substance mixture. The substance or the mixture of substances may, for example, in the moldable state have a higher concentration of low molecular weight substances in the entire substance or substance mixture than in

dimensionally stable condition.

However, a body of a dimensionally stable substance or mixture of substances may be malleable, for example when the body is arranged as a film, for example one

Plastic film, a glass foil or a metal foil. Such a body may, for example, be termed mechanically flexible, since changes in the geometric shape of the body, for example, bending of a film,

can be reversible. However, a mechanically flexible body, for example a film, can also be plastically moldable, for example by the mechanically flexible body being solidified after deformation, for example a

Deep drawing a plastic film. The connection of a first body to a second body may be positive, non-positive and / or cohesive. The connections may be detachable, i. reversible. In various embodiments, a reversible, interlocking connection can be realized, for example, as a screw connection, a hook-and-loop fastener, a clamping / use of staples.

However, the connections may also be non-detachable, i. irreversible. A non-detachable connection can be separated only by destroying the connecting means. In various embodiments, a

irreversible, conclusive connection be realized, for example, as a riveted joint, an adhesive bond or a solder joint.

In a positive connection, the movement of the first body of a surface of the second body are limited, wherein the first body is perpendicular, ie normal, moves in the direction of the restricting surface of the second body. For example, a pin (first body) in a blind hole (second body) may be restricted in motion in five of the six spatial directions. In various embodiments, a form-fitting

Connection can be realized, for example, as a screw connection, a Velcro fastener, a clamp / a use of brackets.

In a positive connection, in addition to the normal force of the first body on the second body, i. a physical contact of the two bodies under pressure, a static friction restrict movement of the first body parallel to the second body. An example of one

Force-fit connection, for example, the

Self-locking a screw in a complementarily shaped thread be. Self-locking can be understood as resistance through friction. In different

Embodiments may be a non-positive connection

For example, be realized as a screw, a riveting.

In a cohesive connection, the first body can be connected to the second body by means of atomic and / or molecular forces. Cohesive compounds can often be non-releasable compounds. In various embodiments, a cohesive connection

for example, as an adhesive bond, a solder joint, such as a glass solder, or a metal solder, a welded joint may be realized.

In the context of this description, an electrically charged substance can be understood as meaning a substance which has an electrical charge, ie is at least temporary, not electrically neutral. The electrical charge can be formed by means of polarization or ionization. Of the electrically charged material may be formed, for example, in the form of particles or molecules.

In the context of this description, an electronic component can be understood as a component which controls, controls or amplifies an electrical component

Stromes concerns, for example by using

Semiconductor devices. An electronic component may, for example, a diode, a transistor, a

Thermogenerator, an integrated circuits, or a

Thyristor, his.

In the context of this description can be an electric

contacted, electronic component to be understood as an embodiment of an electrical component.

In the context of this description can under a

Optoelectronic component an embodiment of a

electronic component can be understood, wherein the optoelectronic component has an optically active region.

In the context of this description, an optically active region of an optoelectronic component can be understood as the region of an optoelectronic component which can absorb electromagnetic radiation and form a photocurrent therefrom or by means of an applied voltage to the optically active region

can emit electromagnetic radiation.

In the context of this description, emitting electromagnetic radiation can emit

electromagnetic radiation. In the context of this description, absorbing electromagnetic radiation may include absorbing

electromagnetic radiation. An optoelectronic component which has two flat, optically active sides, for example

be formed transparent, for example as a

transparent organic light emitting diode.

However, the optically active region can also have a planar, optically active side and a planar, optically inactive side, for example an organic light-emitting diode which is set up as a top emitter or bottom emitter.

In various embodiments, a component emitting electromagnetic radiation may, for example, be a semiconductor component emitting electromagnetic radiation and / or an electromagnetic component

Radiation emitting diode, as an organic

electromagnetic radiation emitting diode, as an electromagnetic radiation emitting transistor or as an organic electromagnetic radiation

be formed emitting transistor. The radiation may, for example, be light in the visible range, UV light and / or infrared light. In this context, the

electromagnetic radiation emitting device

For example, as a light emitting diode (light emitting diode, LED) as an organic light emitting diode (organic light emitting diode, OLED), as light emitting

Transistor or emitting as organic light

Transistor be formed. The light-emitting

Component may be part of an integrated circuit in various embodiments. Furthermore, a plurality of light-emitting components may be provided,

For example, housed in a common housing.

In the context of this description can be an organic

Optoelectronic component, such as an organic light emitting diode (organic light emitting diode - OLED), an organic photovoltaic system, such as an organic Solar cell; in the organic functional layer system comprise or be formed from an organic substance or an organic substance mixture which, for example, for providing an electromagnetic radiation from a supplied electric current or to

Provide an electric current from a

provided electromagnetic radiation is set up. In the context of this description, a harmful environmental influence can be understood as all influences which

For example, they can potentially lead to degradation, cross-linking, and / or crystallization of the organic substance or of the organic substance mixture and thus

For example, limit the life of organic components.

A harmful environmental influence can be, for example, a substance harmful to organic substances or organic substance mixtures, for example oxygen and / or, for example, a solvent, for example water.

A harmful environmental influence can be, for example, an environment which is harmful to organic substances or organic substance mixtures, for example a change above or below a critical value, for example the temperature and / or a change in the ambient pressure.

In the context of this description, a diffusion channel in a layer can be understood as a cavity in the layer having at least two openings, for example a hole, a pore, a connection or the like.

Through the diffusion channel, a substance or substance mixture can migrate or diffuse from an opening of the diffusion channel to the at least one second opening of the diffusion channel, for example by means of an osmotic

Pressure or electrophoretically. A diffusion channel can For example, be formed in the layer such that different sides of the layer are interconnected by the diffusion channel. A diffusion channel can

For example, have a diameter in a range of about the diameter of a water molecule to

about a few nm. A diffusion channel in a layer may be, for example, voids, grain boundaries or the like in the layer or formed thereby. In various embodiments, there is provided a method of determining the permeability of a dielectric layer of an optoelectronic device with respect to water and / or oxygen, the method comprising: applying an electrical voltage across the dielectric layer; Measuring a resulting electric current through the dielectric layer; and determining the

Permeability of the dielectric layer with respect to water and / or oxygen from the measured current strength. In one refinement of the method, the dielectric layer may form a substantially hermetically sealed seal of the optoelectronic component with respect to water

be furnished, wherein the dielectric layer

Diffusion channels may have.

For example, a diffusion channel may have a diameter ranging from about the diameter of a water molecule to about several nm. For example, a diffusion channel in the dielectric layer may be or may be formed by voids, grain boundaries, or the like in the dielectric layer.

In various embodiments, a dielectric layer may be a layer in an optoelectronic device that is dielectrically formed and described

Has diffusion channels, for example a

Barrier thin film, barrier layer, encapsulation layer, Encapsulation thin film, adhesive layer, getter layer, optical coupling layer or decoupling layer,

Litter layer, phosphor layer, dye layer or the like.

In one embodiment of the method for determining, the dielectric layer may have diffusion channels, wherein the permeability is a function of the design and the number of diffusion channels.

In one embodiment of the method for determining the dielectric layer may be on or above an electrical

be formed conductive layer. In one embodiment of the method for determining, the electrically conductive layer can be set up as an electrode of an electronic component.

In one embodiment of the method for determining, the dielectric layer may be configured to hermetically seal the electrically conductive layer with respect to at least one harmful environmental influence.

for example, water and / or oxygen. In one embodiment of the method for determining, the optoelectronic component can be in the form of an organic solar cell, an organic sensor or an organic light-emitting diode

be furnished. In one embodiment of the method for determining, the method may further comprise at least partially surrounding the dielectric layer with an electrically conductive structure. In other words, on or above the dielectric layer may be an electrically conductive

Structure to be formed. In one embodiment of the method for determining the substance or the mixture of the electrically conductive

Structure adapted to provide electrical charge carriers, such as ions.

In one embodiment of the method for determining, the electrically conductive structure can provide at least one type of the following ions: hydroxide ions, protons, electrons, oxonium ions, metal ions, ions of one

organic matter.

In one embodiment of the method for determining, the electrically conductive structure may comprise or be formed from a metal, for example a metallic one

Element, for example copper, aluminum, silver, gold,

Platinum, iron; and / or any metal alloys which comprise these elements as a base material, for example a metallic alloy, for example steel; and / or an intermetallic compound.

In one embodiment of the method for determining, the electrically conductive structure may include or be formed from an electrically conductive paste, for example a metallic paste, for example a silver-conducting paste.

In one embodiment, the electrically conductive

Structure have one of the following substances or be formed from it: metal particles, for example silver particles; Binder, for example nitrocellulose or the like,

electrically conductive organic substances, for example an electrically conductive oligomer or an electrical

conductive polymer.

In one embodiment of the method for determining, the surrounding may be formed as a form of physical contact. In one embodiment of the method for determining the electrically conductive structure can cohesively with the

dielectric layer are connected. In one embodiment of the method for determining, the material-locking connection may comprise applying an electrically conductive coating, an electrically conductive paste or applying an electrically conductive cover to or via the dielectric layer.

In one embodiment of the method for determining, the surrounding of the dielectric layer with the electrically

conductive structure to be temporarily set up. One

For example, temporary surrounding may be considered as immersing the dielectric layer in a solution, suspension or

Dispersion, wherein the dielectric layer is removed by the method from the solution, suspension or dispersion. A permanent surrounding may for example be realized as a formation of a cohesive layer on or above the dielectric layer.

In one embodiment of the method for determining, the electrically conductive structure may be temporary

equipped contact electrode or a temporary

equipped liquid electrode be set up with an electrically conductive liquid. An electrically conductive liquid may, for example, as a

be electrically contacted electrically conductive solution, electrically conductive suspension or electrically conductive dispersion. In other words: the

electrically conductive structure may have a moldable state, for example, be liquid.

In one embodiment of the method for determining the temporarily arranged contact electrode can be used as a measuring needle, an electrically conductive foil, for example a structured, electrically conductive film, or the like to be set up.

In one embodiment of the method for determining, the surrounding of the dielectric layer with an electrically conductive liquid may be as a wetting of the dielectric layer with the electrically conductive liquid

be configured, for example as a dipping of the dielectric layer in the electrically conductive

Liquid.

In one embodiment of the method for determining, the electrically conductive liquid can be set up anhydrous.

In one embodiment of the method for determining the electrically conductive liquid as a solvent

For example, propylene carbonate, sodium percarbonate, a quinone or a quinoline or be formed from it.

In one embodiment of the method for determining the electrically conductive substance or the electrically conductive substance mixture in an electrolyte solution or a

galvanic bath be provided by the

surrounded by dielectric layer.

In one embodiment of the method for determining, an electrolyte solution or a galvanic bath can

Have a mass fraction of electrically conductive substance or electrically conductive mixture with respect to the mass of the solution in a range of about 1% to about 70%.

In an embodiment of the method for determining, the method may further comprise forming an electrical potential across the dielectric layer. In one embodiment of the method for determining, the method may include forming an electrical potential difference across the dielectric layer, so that a

electric field is formed in the diffusion channels.

In one embodiment of the method for determining the application of the electrical voltage can be an electrical

Contacting the electrically conductive layer and the electrically conductive structure with an electrical

Have voltage source, wherein the electrical

Voltage source an electrical voltage curve

which provides the electrical voltage across the

has or forms a dielectric layer. In one embodiment of the method for determining the applied electrical voltage can be formed such that the electrical charge carriers of the electric

migrate conductive structure from the electrically conductive structure through the dielectric layer to the electrically conductive layer.

In one embodiment of the method for determining, measuring the resulting electric current can be

Scanning the surface of the dielectric layer having the temporarily established, electrically conductive structure, for example, a scanning of the surface of the dielectric layer with a temporarily established contact electrode. In an embodiment of the method for determining the voltage profile can be measured by measuring the resulting

coupled electric current.

In various embodiments, an apparatus for determining the permeability of a dielectric layer on or over an electrically conductive layer of a

Optoelectronic device provided, the A device comprising: a control unit configured to change an electric current through the

dielectric layer; and a measuring unit configured to measure the electric current through the

dielectric layer.

In one refinement of the method, the dielectric layer may form a substantially hermetically sealed seal of the optoelectronic component with respect to water

be furnished, wherein the dielectric layer

Diffusion channels may have.

For example, a diffusion channel may have a diameter ranging from about the diameter of a water molecule to about several nm. For example, a diffusion channel in the dielectric layer may be or may be formed by voids, grain boundaries, or the like in the dielectric layer. In various embodiments, a dielectric

Layer may be a layer in an optoelectronic component which is formed and described dielectrically

Has diffusion channels, for example a

Barrier thin layer, barrier layer, encapsulation layer, encapsulation thin layer, adhesive layer, getter layer, optical coupling layer or decoupling layer,

Litter layer, phosphor layer, dye layer or the like. In one embodiment of the device, the dielectric layer may be formed on or above an electrically conductive layer.

In one embodiment of the device, the electrically conductive layer can be configured as an electrode of the optoelectronic component. In one embodiment of the device, the

Barriertünnschicht be set up for a hermetic sealing of the electrically conductive layer with respect to a harmful environmental impact, for example, water and / or oxygen.

In one embodiment of the device, the

optoelectronic component as an organic solar cell, organic sensor or an organic light emitting diode

be educated.

In one embodiment of the device, the control unit may have a contact-forming device. In one embodiment of the device, the control unit may have a voltage source, wherein the voltage source with the electrically conductive layer and the

Contacting unit is electrically connected, wherein the electrical voltage source is adapted to provide an electrical voltage waveform, wherein the electrical voltage waveform forms an electrical voltage across the dielectric layer. The formation of the electrical voltage across the dielectric layer may be arranged such that an electric field is formed in the diffusion channels.

In one embodiment of the device, the

Contact formation device be configured such that the dielectric layer with an electrically conductive

Structure is at least partially surrounded by physical contact.

In one embodiment of the device, the substance or the substance mixture of the electrically conductive structure can be set up to provide electrical charge carriers, for example ions. In one embodiment of the device, the electrically conductive structure can provide at least one type of the following ions: hydroxide ions, protons, electrons, oxonium ions, metal ions, ions of an organic substance.

In one embodiment of the device, the

Contact formation device to a cohesive

Connecting the electrically conductive structure with the

be arranged dielectric layer.

In one embodiment of the device, the

Contact formation device for applying a

electrically conductive structure on or over the

be arranged dielectric layer, for example, to apply an electrically conductive coating, to apply an electrically conductive paste or to apply an electrically conductive cover.

In one embodiment of the device, the electrically conductive structure can be configured as an electrically conductive cover, wherein the electrically conductive cover has an electrically conductive coating and conductor tracks on or above a substrate. The electrically conductive cover may be formed such that the contact electrode and / or at least one electrically conductive layer of the optoelectronic component has electrically separate contact pads for electrical contacting.

In one embodiment of the device, the electrically conductive structure may comprise or be formed from a metal, for example a metallic element, for example copper, aluminum, silver, gold, platinum, iron; and / or any metal alloys which comprise these elements as a base material, for example a metallic alloy, for example steel; and / or an intermetallic

Connection . In one embodiment of the device, the electrically conductive structure may comprise a silver conductive paste, copper paste,

Have aluminum paste, steel paste, gold paste and / or platinum paste or be formed from it.

In one embodiment, the electrically conductive

conductive polymer.

In one embodiment of the device, the

Contact formation device for temporarily surrounding the dielectric layer with an electrically conductive

Be set up structure. A temporary enclosure may be, for example, as a dipping of the dielectric layer in a solution, suspension or dispersion, wherein the dielectric layer is removed from the solution, suspension or dispersion by the method. A permanent surrounding may, for example, be considered as forming a

cohesive layer can be realized on or above the dielectric layer.

In one embodiment of the device, the

Contact formation device, an electrical contact electrode or a liquid electrode with an electrical

have conductive liquid. An electrically conductive liquid may, for example, as an electrical

contacted electrically conductive solution, electrically

conductive suspension or electrically conductive dispersion. In one embodiment of the device, the contact electrode to a scanning of the surface of the be arranged dielectric layer, for example, be movably mounted.

In one embodiment of the device, the contact electrode may be part of the measuring unit, for example

additionally be set up as a measuring electrode.

In one configuration of the device, the contact electrode and / or the measuring electrode can be designed as a measuring needle, an electrically conductive foil, for example a structured, electrically conductive foil, or the like.

In one embodiment of the device, the

Contact formation device for wetting the

dielectric layer with the electrically conductive

Be set up liquid, for example a

Device for immersing the dielectric layer in the electrically conductive liquid.

In one embodiment of the device, the electrically conductive liquid can be set up anhydrous.

In one embodiment of the device, the electrically conductive liquid as a solvent, for example

Propylene carbonate, sodium percarbonate, a quinone or a quinoline or be formed therefrom.

In one embodiment of the device, the electrically conductive substance or the electrically conductive substance mixture can be provided in an electrolyte solution or a galvanic bath, by which the dielectric layer is surrounded. In one embodiment of the device, an electrolyte solution or a galvanic bath can be a mass fraction of electrically conductive substance or electrically conductive Mixture with respect to the mass of the solution in a range of about 1% to about 70%.

In an embodiment of the device, the control unit can be set up to control the electrical voltage curve, for example have a phase dimmer, a pulse modulator or a frequency modulator.

The phase dimmer may be configured to phase angle control or phase sequence control the electrical potential across the dielectric layer.

The pulse modulator may be configured for pulse width modulation or pulse amplitude modulation of the electrical potential across the dielectric layer.

The frequency modulator may be configured to change the frequency of an alternating current through the dielectric layer, for example for an impedance measurement.

In one configuration of the device, the control unit can be set up in such a way for controlling the electrical voltage curve that the electrical charge carriers of the electrically conductive structure are electrically connected to the electric power supply

migrate conductive structure through the dielectric layer to the electrically conductive layer, for example, by the control unit generates a direct current to charge carriers through the dielectric layer, for example, by the control unit comprises an electric bridge rectifier.

In one embodiment of the device, the measurement unit may be configured to measure at least one of the following electrical properties: current, resistance, conductivity, impedance, or similar related electrical properties. In an embodiment of the device, the measuring unit may have at least one measuring contact or at least one measuring electrode which is electrically contacted with the electrically conductive layer or the electrically conductive structure.

In one embodiment of the device, the measuring unit with the dielectric layer, an electrical

Form series connection and / or an electrical parallel connection.

In one embodiment of the device, the measuring unit may have at least one resistance bridge, for example a Wheatstone bridge.

In an embodiment of the device, the measuring unit can have at least one amplifier which is set up to amplify the measured current intensity through the dielectric layer.

In one embodiment of the device, the measuring unit may comprise an electrical filter arranged to reduce the electrical noise of the current through the dielectric layer.

In one embodiment of the device, the measuring unit may have an autocorrelator which is used to auto-correct the electric current through the dielectric layer

is set up.

In one embodiment of the device, the

Control unit and the measuring unit be configured such that the control of the voltage waveform is coupled to the measurement of the at least one electrical property, for example, is correlated. In various embodiments, a

Optoelectronic device provided, the

optoelectronic component comprising: a carrier; an electrically active region on or above the support, the electrically active region comprising: a first electrode on or above the support, an organic functional one

Layer structure on or above the first electrode, and a second electrode on or above the organic

functional layer structure; a barrier thin film configured to seal the electrically active region with respect to water and / or oxygen; and a test electrode on or over the barrier film.

In one embodiment, the test electrode may be formed flat on or above the barrier thin film.

In one embodiment, the areal proportion of

Test electrode may be formed approximately on or over the planar portion of the barrier film.

In one embodiment, the test electrode may be structured such that a part of the barrier thin film

exposed. In one embodiment, the barrier thin film may be configured to hermetically seal the electrically active region with respect to a harmful environmental influence, for example, water and / or oxygen. In one embodiment, the barrier thin film

Have diffusion channels, wherein the permeability is a function of the design and the number of

Diffusion channels is. In one embodiment, the substance or the substance mixture of the test electrode for providing electrical

Be installed charge carriers, such as ions. In one embodiment, the test electrode may provide at least one type of the following ions: hydroxide ions,

Protons, electrons, oxonium ions, metal ions, ions of an organic substance.

In one embodiment of the device, the test electrode may comprise or be formed from a metal,

For example, a metallic element, for example

Copper, aluminum, silver, gold, platinum, iron; and / or any metal alloys which comprise these elements as a base material, for example a metallic alloy,

for example steel; and / or an intermetallic

Connection .

In one embodiment, the test electrode can be a

Have silver conductive paste or be formed from it.

In one embodiment, the electrically conductive

conductive polymer.

In one embodiment, the test electrode may be anhydrous or water-binding. In one embodiment, test electrode may include or be formed from, for example, propylene carbonate, sodium percarbonate, a quinone, or a quinoline.

In one embodiment, the test electrode may have a

Have a mass fraction of electrically conductive substance or electrically conductive mixture with respect to the mass of the solution in a range of about 1% to about 70%. In one embodiment, the test electrode can be connected in a material-bonded manner to the barrier thin film. In one embodiment, the test electrode may have a contact pad, which is used for electrically contacting the

Test electrode is set up.

In one embodiment, the test electrode may be designed to seal the barrier thin film.

In one embodiment, the optoelectronic component can be configured as an organic solar cell, organic sensor or an organic light-emitting diode.

In various embodiments, there is provided a method of manufacturing an electronic device, the method comprising: providing a

optoelectronic component having an electrically active region on or above the carrier, wherein the electrically active region has a first electrode on or above the carrier, an organic functional layer structure on or above the first electrode, a second electrode on or above the organic functional layer structure, and a barrier thin film; and forming a

Test electrode on or above the barrier thin film.

In one embodiment of the method, the test electrode can be formed flat on or above the barrier thin film.

In one embodiment of the method, the test electrode can be formed such that the areal proportion of the

Test electrode has approximately on or over the planar portion of the barrier film. In one embodiment of the method, the test electrode can be structured such that a part of the

Barrier thin film is exposed. In one embodiment of the method, the

Barriertünnschicht be set up for a hermetic sealing of the electrically active region with respect to a harmful environmental impact, for example water and / or oxygen.

In one embodiment of the method, the

Barrier thin film have diffusion channels, wherein the permeability is a function of the design and the number of diffusion channels.

In one embodiment of the method, the substance or the substance mixture of the test electrode for providing

be arranged electrical charge carriers, for example ions.

In one embodiment of the method, the test electrode may provide at least one type of the following ions:

Hydroxide ions, protons, electrons, oxonium ions, metal ions, ions of an organic substance.

In one embodiment of the method, the electrically conductive structure may comprise or be formed from a metal, for example a metallic element, for example copper, aluminum, silver, gold, platinum, iron; and / or any metal alloys which comprise these elements as a base material, for example a metallic alloy, for example steel; and / or an intermetallic

Connection . In one embodiment of the method, the test electrode may comprise a silver conductive paste, copper paste, aluminum paste, Steel paste, gold paste and / or platinum paste or be formed from it.

In one embodiment, the electrically conductive

conductive polymer.

In one embodiment of the method, the test electrode can be designed or formed anhydrous. In one embodiment of the method, the electrically conductive liquid as a solvent, for example

Propylene carbonate, sodium percarbonate, a quinone or a quinoline or be formed therefrom. In one embodiment of the method, the test electrode may be formed with a mass fraction of electrically conductive substance or electrically conductive substance mixture with respect to the mass of the solution in a range of about 1% to about 70%.

In one embodiment of the method, the test electrode can be connected to the barrier thin film in a substance-locking manner.

In one embodiment of the method, the test electrode can have or be connected to a contact pad, which is designed to electrically contact the test electrode.

In one embodiment of the method, the test electrode can be formed to seal the barrier thin film.

In one embodiment of the method, the

be formed.

Embodiments of the invention are illustrated in the figures and are explained in more detail below.

Show it

Figure 1 is a schematic cross-sectional view of a

optoelectronic component, according to various

Configurations. ;

Figure 2 is a schematic cross-sectional view of a

optoelectronic component, according to various embodiments; and

Figure 3 is a diagram of a method for determining the

Permeability of a dielectric layer of an electrical component, according to various embodiments.

In the following detailed description, reference is made to the accompanying drawings, which form a part hereof and in which is by way of illustration specific

Embodiments are shown in which the invention can be practiced. In this regard will

Directional terminology such as "top", "bottom", "front", "back", "front", "rear", etc. used with reference to the orientation of the described figure (s). There

Components of embodiments in number

different orientations can be positioned, the directional terminology is illustrative and is in no way limiting. It should be understood that other embodiments may be utilized and structural or logical changes may be made without departing from the scope of the present invention. It should be understood that the features of those described herein various exemplary embodiments may be combined with each other unless specifically stated otherwise. The following detailed description is therefore not to be construed in a limiting sense, and the

Scope of the present invention is defined by the appended claims.

In the context of this description, the terms

"connected", "connected" and "coupled" used to describe both a direct and indirect connection, a direct or indirect connection and a direct or indirect coupling. In the figures, identical or similar elements are provided with identical reference numerals, as appropriate.

Fig.l shows a schematic cross-sectional view of an optoelectronic component, according to various

Embodiments. In Fig.l schematically an embodiment according to one of the embodiment of an optoelectronic component of the description of Figure 2 is shown. Another embodiment of an optoelectronic component of the description of Figure 2 can be another schematic

Layer cross section Fig.l lead. In this sense Fig.l and the description of Fig.l is only as

Illustration of an optoelectronic component of the description of Figure 2 to understand. FIG. 1 shows a first electrode 110 which is arranged on or above a carrier 102. On or above the first electrode 110 is an organic functional

Layer structure 112 arranged. About or on the

organic functional layer structure 112, a second electrode 114 is arranged, wherein the second electrode 114 is electrically insulated from the first electrode 110 by means of an electrical insulation 104. The second electrode 114 is physically and electrically connected to a contact pad 106. The contact pad 106 is in the geometric

Edge region of the carrier 102 disposed on or above the carrier 102, wherein the contact pad 106 by means of a

electrical insulation 104 electrically from the first

Electrode 110 is isolated. On or above the second

Electrode 114 is a barrier thin film 108 arranged such that the second electrode 114, the electrical

Isolations 104 and the organic functional

Layer structure 112 are surrounded by the barrier thin layer 108. In other words, barrier thin film 108 and carrier 102 include second electrode 114, electrical insulation 104, and organic functional layer structure 112. The barrier film 108 is configured to withstand harmful environmental conditions to hermetically seal the trapped layers. On or above the barrier thin layer 108, an electrically conductive structure 118, for example an electrically conductive coating 118, an electrically conductive paste 118, an electrically conductive cover 118 of an electrically conductive liquid 118 is arranged, wherein the electrically conductive structure 118 is an electrical

conductive substance 118 or an electrically conductive

Mixture 118 comprises or is formed therefrom.

The carrier 102, the first electrode 110, the organic functional layer structure 112, the second electrode 114, and the barrier thin-film layer 108 may, for example, be arranged according to one of the embodiments of the descriptions of FIG.

The electrical insulation 104 may be configured such that a current flow between two electrically

conductive regions, for example, between the first electrode 110 and the second electrode 114 is prevented. The substance or mixture of electrical insulation may, for example, be a coating or a coating agent, for example, be a polymer and / or a paint. The lacquer may, for example, have a coating substance which can be applied in liquid or in powder form,

For example, have or be formed from a polyimide. The electrical insulation 104 can be applied or formed, for example by means of a printing process, for example structured. The printing method may include, for example, inkjet printing (inkjet printing), screen printing and / or pad printing.

The contact pad 106 may comprise or be formed from a substance or mixture of substances as a substance or mixture of substances similar to the second electrode 114 according to one of the

Embodiments of the descriptions of Fig.2.

The application of electrical voltage between a

Electrode - in the illustrated embodiment, the second electrode 114, by means of an electrical

Contacting the contact pad 106 and the electrical

conductive structure 118 by means of electrical contacts 116, for example by means of a conclusive connection of the electrodes of an electrical voltage source 120 with the contact pad 106 and the electrically conductive structure 118. The conclusive connection and electrical contact, for example, by means of contact pins, cutting contacts, terminal contacts, electrically conductive adhesive bonds ( Anisotropic conductive film bonding - ACF bonding), a friction welding process (ultrasonic bonding) or a

Be formed solder joint.

An electrical potential, for example an electrical voltage curve, can be formed by means of the voltage source 120 via the barrier thin film 108. Of the

Voltage curve should be set up so that the

Barrier thin film 108 has dielectric properties, that is set up electrically insulating. This can do that electrical potential across the barrier thin film 108, an electrical current flow of electrical charge carriers through electrically conductive channels, for example

Diffusion channels, in the barrier thin layer 108th

enable.

When a maximum voltage value is exceeded,

for example, the breakdown voltage or the

Breakdown voltage of the barrier film 108, in some embodiments of the barrier film 108, such as a barrier film 108 of zinc oxide, the barrier film 108 may become electrically conductive. Therefore, the electric potential over the

Barrier thin layer 108 smaller than this maximum

Be voltage value.

The voltage profile can, for example, generate a direct current through the barrier thin film 108, have voltage pulses, for example be pulsed, and / or one

Generate AC power, for example, for impedance measurements.

The voltage curve can, for example, by means of a

Phase dimmer, a pulse modulator and / or a

Frequency modulator can be modulated.

The layers of the optoelectronic component in

Section 200 are described in various embodiments in Figure 2. 2 shows a schematic cross-sectional view of an optoelectronic component, according to various

Exemplary embodiments.

In the schematic cross-sectional view 200 are the

Layers of the optoelectronic component 100 of the

Section 200 of Fig.l described. The optoelectronic component, for example a

electromagnetic component which provides electromagnetic radiation, for example a light-emitting component, for example in the form of an organic light-emitting diode, may have a carrier 102. For example, the carrier 102 may serve as a support for electronic elements or layers, such as light-emitting elements.

For example, the carrier 102 may include or be formed from glass, quartz, and / or a semiconductor material or any other suitable material. Furthermore, the carrier 102 may comprise or be formed from a plastic film or a laminate with one or more plastic films. The plastic may contain one or more polyolefins

(For example, high density polyethylene or low density polyethylene or polypropylene (PP)) or formed from it. Furthermore, the plastic may be polyvinyl chloride (PVC), polystyrene (PS), polyester and / or polycarbonate (PC),

Polyethylene terephthalate (PET), polyethersulfone (PES) and / or polyethylene naphthalate (PEN) or be formed therefrom. The carrier 102 may be one or more of the above

have mentioned substances.

The carrier 102 may include or be formed from a metal or metal compound, such as copper, silver, gold, platinum, or the like.

A carrier 102 comprising a metal or a

Metal compound may also be formed as a metal foil or a metal-coated foil.

The carrier 102 may be translucent or even transparent.

The term "translucent" or "translucent layer" can be understood in various embodiments that a layer is permeable to light,

for example, for the light generated by the light emitting device, for example one or more

Wavelength ranges, for example, for light in one

Wavelength range of visible light (for example at least in a partial region of the wavelength range from 380 nm to 780 nm). For example, the term "translucent layer" in various embodiments is to be understood to mean that substantially all of them are in one

Structure (for example, a layer) coupled

Quantity of light is also coupled out of the structure (for example, layer), wherein part of the light can be scattered here. In various embodiments, the term "transparent" or "transparent layer" can be understood to mean that a layer is permeable to light

(For example, at least in a portion of the

Wavelength range from 380 nm to 780 nm), wherein light coupled into a structure (for example a layer) is coupled out of the structure (for example layer) substantially without scattering or light conversion.

Thus, "transparent" in different

Embodiments as a special case of "translucent" to look at.

In the event that, for example, a light-emitting monochromatic or limited in the emission spectrum

is to be provided electronic component, it is sufficient that the optically translucent layer structure at least in a partial region of the wavelength range of the desired monochrome light or for the limited

Emission spectrum is translucent. In various embodiments, the organic

Light emitting diode 100 (or the light-emitting devices according to the above or later described

Embodiments) may be configured as a so-called top and bottom emitter. A top and / or bottom emitter can also be used as an optically transparent component,

For example, a transparent organic light emitting diode, be designated. On or above the carrier 102 may be in different

Embodiments optionally be arranged a barrier layer 202. The barrier layer 202 may include or consist of one or more of the following: alumina, zinc oxide, zirconia, titania,

Hafnium oxide, tantalum oxide, lanthanum oxide, silicon oxide,

Silicon nitride, silicon oxynitride, indium tin oxide,

Indium zinc oxide, aluminum-doped zinc oxide, as well

Mixtures and alloys thereof. Furthermore, the

Barrier layer 202 in various embodiments have a layer thickness in a range of about 0.1 nm (one atomic layer) to about 5000 nm, for example, a layer thickness in a range of about 10 nm to about 200 nm, for example, a layer thickness of about 40 nm.

On or above the barrier layer 202, an electrically active region 204 of the light-emitting component 100 may be arranged. The electrically active region 204 may be understood as the region of the light emitting device 100 in which an electric current flows for operation of the light emitting device 100. In various exemplary embodiments, the electrically active region 204 may comprise a first electrode 110, a second electrode 114 and an organic functional layer structure 112, as will be explained in more detail below.

Thus, in various embodiments, on or above the barrier layer 202 (or, if the barrier layer 202 is not present on or above the carrier 102), the first electrode 110 (eg, in the form of a first

Electrode layer 110) may be applied. The first electrode 110 (hereinafter also referred to as lower electrode 110) may be formed of or be made of an electrically conductive substance, such as a metal or a conductive conductive oxide (TCO) or a layer stack of several layers thereof Metal or different metals and / or the same TCO or different TCOs. Transparent conductive oxides are transparent, conductive substances, for example

Metal oxides, such as zinc oxide, tin oxide,

Cadmium oxide, titanium oxide, indium oxide, or indium tin oxide (ITO). In addition to binary metal oxygen compounds, such as ZnO, SnO 2, or Ιη 2θ 3 also include ternary metal oxygen compounds, such as AlZnO, Zn2Sn04, CdSn03, ZnSn03, Mgln204, Galn03, Zn2ln20s or

In4Sn30] _2 or mixtures of different transparent conductive oxides to the group of TCOs and can be used in various embodiments.

Furthermore, the TCOs do not necessarily correspond to one

stoichiometric composition and may also be p-doped or n-doped.

In various embodiments, the first

Electrode 110 comprises a metal; For example, Ag, Pt, Au, Mg, Al, Ba, In, Ca, Sm or Li, as well as compounds, combinations or alloys of these substances.

In various embodiments, the first

Electrode 110 may be formed by a stack of layers of a combination of a layer of a metal on a layer of a TCO, or vice versa. An example is one

Silver layer deposited on an indium tin oxide (ITO) layer (Ag on ITO) or ITO-Ag-ITO multilayers.

In various embodiments, the first

Electrode 110 one or more of the following substances

alternatively or additionally to the abovementioned substances: networks of metallic nanowires and particles, for example of Ag; Networks of carbon nanotubes; Graphene particles and layers; Networks of semiconducting nanowires. Furthermore, the first electrode 110 may comprise electrically conductive polymers or transition metal oxides or electrically conductive transparent oxides. In various embodiments, the first

Electrode 110 and the carrier 102 may be translucent or transparent. In the case where the first electrode 110 comprises or is formed from a metal, the first electrode 110 may have, for example, a layer thickness of less than or equal to approximately 25 nm, for example one

Layer thickness of less than or equal to approximately 20 nm,

For example, the first electrode 110 may have, for example, a layer thickness of greater than or equal to approximately 10 nm, for example a layer thickness of greater than or equal to approximately 15 nm

Embodiments, the first electrode 110 a

Layer thickness in a range of about 10 nm to about 25 nm, for example, a layer thickness in a range of about 10 nm to about 18 nm, for example, a layer thickness in a range of about 15 nm to about 18 nm.

Further, in the case where the first electrode 110 has or is formed of a conductive transparent oxide (TCO), the first electrode 110 may have, for example, a layer thickness in a range of about 50 nm to about 500 nm, for example, a layer thickness in a range from about 75 nm to about 250 nm, for example, a layer thickness in a range of

about 100 nm to about 150 nm.

Further, in the case of the first electrode 110 of, for example, a network of metallic nanowires, such as Ag, which may be combined with conductive polymers, a network of carbon nanotubes combined with conductive polymers may be combined can be formed, or from graphene layers and composites, the first electrode 110, for example one

Layer thickness in a range of about 1 nm to about 500 nm, for example, a layer thickness in a range of about 10 nm to about 400 nm,

For example, a layer thickness in a range of

about 40 nm to about 250 nm.

The first electrode 110 can be used as the anode, ie as

hole-injecting electrode may be formed or as

Cathode, that is as an electron-injecting electrode.

The first electrode 110 may be a first electrical

Contact pad, to which a first electrical

Potential (provided by a power source (not shown), for example, a power source or a voltage source) can be applied. Alternatively, the first electrical potential may be applied to the carrier 102 and then indirectly applied to the first electrode 110. The first electrical potential may be, for example, the ground potential or another predetermined reference potential.

Furthermore, the electrically active region 204 of the

light emitting device 100 is an organic

functional layer structure 112, which is applied on or above the first electrode 110 or

is trained. The organic functional layer structure 112 may comprise one or more emitter layers 208, for example with fluorescent and / or phosphorescent emitters, and one or more hole-line layers 206 (also referred to as hole-transport layer (s) 210). In

Various embodiments may alternatively or additionally include one or more electron conductive layers 206 (also referred to as electron transport layer (s) 206).

Examples of emitter materials used in the

light emitting device 100 according to various

Embodiments of Emitter Layer (s) 208

organic or organic

organometallic compounds, such as derivatives of polyfluorene, polythiophene and polyphenylene (for example 2- or 2,5-substituted poly-p-phenylenevinylene) and metal complexes, for example iridium complexes such as blue-phosphorescent FIrPic (bis (3,5-difluoro-2- (bis 2-pyridyl) phenyl- (2-carboxypyridyl) -iridium III), green phosphorescent

Ir (ppy) 3 (tris (2-phenylpyridine) iridium III), red

Phosphorus Ru (dtb-bpy) 3 * 2 (PFg) (tris [4, 4'-di-tert-butyl- (2, 2 ') -bipyridine] ruthenium (III) complex) and blue-fluorescent DPAVBi (4, 4 Bis [4- (di-p-tolylamino) styryl] biphenyl), green fluorescent TTPA

(9, 10-bis [N, -di- (p-tolyl) -amino] anthracene) and red

fluorescent DCM2 (4-dicyanomethylene) -2-methyl-6-yl-ulolidyl-9-enyl-4H-pyran) as a non-polymeric emitter. Such non-polymeric emitters can be deposited by means of thermal evaporation, for example. Furthermore, can

Polymer emitters are used, which in particular by means of a wet chemical process, such as a spin-on process (also referred to as spin coating), are deposited.

The emitter materials may be suitably embedded in a matrix material.

It should be noted that other suitable

Emitter materials are also provided in other embodiments.

The emitter materials of the emitter layer (s) 208 of the

Light-emitting device 100 may, for example so be selected such that the light emitting device 100 emits white light. The emitter layer (s) 208 may include a plurality of emitter materials of different colors (for example blue and yellow or blue, green and red)

Alternatively, the emitter layer (s) 208 may be constructed of multiple sublayers, such as a blue fluorescent emitter layer 208 or blue

phosphorescent emitter layer 208, a green

phosphorescent emitter layer 208 and a red

phosphorescent emitter layer 208. By mixing the different colors, the emission of light can result in a white color impression. Alternatively, it can also be provided to arrange a converter material in the beam path of the primary emission produced by these layers, which at least partially absorbs the primary radiation and emits secondary radiation of a different wavelength, so that from a (not yet white) primary radiation by the combination of primary radiation and secondary Radiation produces a white color impression.

The organic functional layer structure 112 may generally include one or more electroluminescent layers. The one or more electroluminescent

Layers may or may include organic polymers, organic oligomers, organic monomers, organic small, non-polymeric molecules ("small molecules") or a combination of these materials. For example, the organic functional layer structure 112 may be one or more

have electroluminescent layers, which as

Hole transport layer 210 is executed or are, so that, for example, in the case of an OLED an effective

Hole injection into an electroluminescent layer or an electroluminescent region is made possible.

Alternatively, in various embodiments, the organic functional layer structure 112 may include one or more functional layers, which may be referred to as a

Electron transport layer 206 is executed or are, so that, for example, in an OLED, effective electron injection into an electroluminescent layer or an electroluminescent region is made possible. As a material for the hole transport layer 210 can

for example, tertiary amines, carbazole derivatives, conductive

Polyaniline or Polyethylendioxythiophen be used. In various embodiments, the one or more electroluminescent layers may or may not be referred to as

be carried out electroluminescent layer.

In various embodiments, the

Hole transport layer 210 may be deposited on or over the first electrode 110, for example, deposited, and the emitter layer 208 may be on or above the

Hole transport layer 210 may be applied, for example, be deposited. In various embodiments, electron transport layer 206 may be deposited on or over emitter layer 208, for example, deposited.

In various embodiments, the organic functional layer structure 112 (ie, for example, the sum of the thicknesses of hole transport layer (s) 210 and

Emitter layer (s) 208 and electron transport layer (s) 206) have a layer thickness of at most about 1.5 ym, for example a layer thickness of at most about 1.2 ym, for example a layer thickness of at most about 1 ym, for example a layer thickness of at most about 800 nm, for example a layer thickness of at most approximately 500 nm, for example a layer thickness of at most approximately 400 nm, for example a layer thickness of approximately approximately 300 nm. In various exemplary embodiments, the organic functional layer structure 112 may include a

Stack of several directly stacked

have organic light-emitting diodes (OLEDs), wherein each OLED, for example, may have a layer thickness of at most about 1.5 ym, for example, a layer thickness of maximum about 1.2 μm, for example a layer thickness of at most about 1 μm, for example a layer thickness of at most about 800 nm, for example a layer thickness of at most about 500 nm, for example a layer thickness of at most about 400 nm, for example a layer thickness of at most about 300 nm In various embodiments, the organic functional layer structure 112

For example, have a stack of two, three or four directly superposed OLEDs, in which case, for example, organic functional layer structure 112 may have a layer thickness of at most about 3 ym.

Optionally, the light emitting device 100 may generally include other organic functional layers, for example

arranged on or over one or more

Emitter layers 208 or on or over the or the

Electron transport layer (s) 206, which serve to further improve the functionality and thus the efficiency of the light-emitting device 100.

On or above the organic functional layer structure 112 or optionally on or above the one or more further organic functional layers

Layer structures may be the second electrode 114

(for example in the form of a second electrode layer 114) may be applied.

In various embodiments, the second

Electrode 114 have the same substances or be formed from it as the first electrode 110, wherein in

various embodiments metals especially

are suitable.

In various embodiments, the second

Electrode 114 (for example, in the case of a metallic second electrode 114), for example, have a layer thickness of less than or equal to about 50 nm, for example, a layer thickness of less than or equal to approximately 45 nm, for example a layer thickness of less than or equal to approximately 40 nm, for example a layer thickness of less than or equal to approximately 35 nm, for example a layer thickness of less than or equal to approximately 30 nm,

For example, a layer thickness of less than or equal to about 25 nm, for example, a layer thickness of less than or equal to about 20 nm, for example, a layer thickness of less than or equal to about 15 nm, for example, a layer thickness of less than or equal to about 10 nm.

The second electrode 114 may generally be formed similarly to, or different from, the first electrode 110. The second electrode 114 may be made of one or more embodiments in various embodiments

be formed of a plurality of substances and with the respective layer thickness, or as described above in connection with the first electrode 110. In different

Embodiments, the first electrode 110 and the second electrode 114 are both formed translucent or transparent. Thus, the shown in Fig.l

light emitting device 100 may be formed as a top and bottom emitter (in other words, as a transparent light emitting device 100).

The second electrode 114 can be used as the anode, ie as

hole-injecting electrode may be formed or as

Cathode, that is as an electron-injecting electrode. The second electrode 114 may have a second electrical connection to which a second electrical connection

Potential (which is different from the first

electric potential) provided by the

Energy source, can be applied. The second electrical potential may, for example, have a value such that the

Difference to the first electrical potential has a value in a range from about 1.5 V to about 20 V, For example, a value in a range of about 2.5 V to about 15 V, for example, a value in a range of about 3 V to about 12 V. On or above the second electrode 114 and thus on or above the electrically active region 204 optionally an encapsulation 108, for example in the form of a

Barrier thin film / thin film encapsulation 108 are formed or be.

In the context of this application, a "barrier thin film" 108 or a "barrier thin film" 108 can be understood to mean, for example, a layer or a layer structure which is suitable for providing a barrier to chemical contaminants or atmospheric substances, in particular to water (moisture). and oxygen, to form. In other words, the barrier film 108 is formed to be resistant to OLED damaging materials such as

Water, oxygen or solvents can not or at most be penetrated to very small proportions.

According to an embodiment, the barrier thin-film layer 108 may be formed as a single layer (in other words, as

Single layer) may be formed. According to an alternative embodiment, the barrier thin-film layer 108 may comprise a plurality of sub-layers formed on one another. In other words, according to one embodiment, the

Barrier thin film 108 as a stack of layers (stack)

be educated. The barrier film 108 or one or more sublayers of the barrier film 108 may be formed by, for example, a suitable deposition process, e.g. by means of a

Atomic Layer Deposition (ALD) according to one embodiment, e.g. plasma-enhanced atomic layer deposition (PEALD) or plasmaless

Atomic deposition method (Plasma-less Atomic Layer Deposition (PLALD)), or by means of a chemical

Gas phase deposition process (Chemical Vapor Deposition

(CVD)) according to another embodiment, e.g. one

plasma enhanced chemical vapor deposition (PECVD) or plasmaless vapor deposition (plasma-less

Chemical Vapor Deposition (PLCVD)), or alternatively by other suitable deposition methods. By using an atomic layer deposition process (ALD) very thin layers can be deposited. In particular, layers can be deposited whose layer thicknesses are in the atomic layer region. According to one embodiment, in a

Barrier thin film 108 having multiple sub-layers, all sub-layers are formed by an atomic layer deposition process. A layer sequence comprising only ALD layers may also be referred to as "nanolaminate".

According to an alternative embodiment, in a

Barrier thin film 108 having a plurality of sublayers, one or more sublayers of the barrier thin film 108 by a deposition method other than one

Atomic layer deposition processes are deposited,

for example by means of a gas phase separation process.

The barrier film 108 may, in one embodiment, have a layer thickness of about 0.1 nm (one atomic layer) to about 1000 nm, for example, a layer thickness of about 10 nm to about 100 nm according to a

Embodiment, for example, about 40 nm according to an embodiment. According to an embodiment, in which the barrier thin film

108 has multiple partial layers, all partial layers may have the same layer thickness. According to another Design, the individual sub-layers of

Barrier thin layer 108 have different layer thicknesses. In other words, at least one of

Partial layers have a different layer thickness than one or more other of the sub-layers.

The barrier thin-film layer 108 or the individual partial layers of the barrier thin-film layer 108 may, according to one embodiment, be formed as a translucent or transparent layer. In other words, the barrier film 108 (or the individual sub-layers of the barrier film 108) may be made of a translucent or transparent substance (or mixture that is translucent or transparent). According to one embodiment, the barrier thin-film layer 108 or (in the case of a layer stack having a plurality of partial layers) one or more of the partial layers of the

Barrier thin-film 108 comprising or being formed from any of the following: aluminum oxide, zinc oxide, zirconium oxide, titanium oxide, hafnium oxide, tantalum oxide,

Lanthanum oxide, silicon oxide, silicon nitride,

Silicon oxynitride, indium tin oxide, indium zinc oxide, aluminum ^¬ doped zinc oxide, and mixtures and alloys

the same. In various embodiments, the barrier thin film 108 or (in the case of a

Layer stack with a plurality of sub-layers) one or more of the sub-layers of the barrier layer 108 have one or more high-index materials, in other words, one or more high-level materials

Refractive index, for example with a refractive index of at least 2.

3 shows a diagram of a method for determining the permeability of a dielectric layer of an electrical component, according to various embodiments. In one embodiment, the method may be used for

Determining the permeability of a dielectric layer of an electrical component 300 after encapsulating 302 an electrically active region 204, for example of an organic, electronic component 100 on or above a carrier 102, for example according to one of

Embodiment of the descriptions of Fig.l or Fig.2, with a barrier thin layer 108, a surrounding 304 of

Barrier thin layer 108 of the organic electronic component 100 having an electrically conductive structure 118.

Furthermore, the method 300 may include forming 306 an electrical potential across the barrier film 108, i. forming an electrical

Potential difference between one of the electrodes 110, 114 of the organic electronic component 100 and the

electrically conductive structure 118 have. Furthermore, the method 300 may include measuring 308 at least one electrical property of the barrier thin film 108, such as measuring an electrical characteristic

Current through the barrier film 108, thereby

for example, the electrical conductivity of the

Barrier thin film 108 can be determined as the electrical property of the barrier thin film 108.

The surrounding 304 may be, for example, as a layer of an electrically conductive material or

electrically conductive mixture on or above the

Barrier thin layer 108 may be established.

In one embodiment, surrounding 304 may be as a wetted barrier layer 108 with a liquid, electrically conductive or liquid, electrically

be arranged conductive mixture, for example, a dipping of the electronic component 100 in a Solution with liquid, electrically conductive substance or liquid, electrically conductive substance mixture, wherein the barrier thin layer 108 is completely surrounded by the solution, that is wetted.

In one embodiment, the electrically conductive substance or the electrically conductive substance mixture of the electrically conductive structure 118 only by means of the electrical

Potentials become electrically conductive, i. to a

electrically conductive substance or electrically conductive substance mixture, for example by means of electrolysis.

The electrically conductive structure 118 may comprise or be formed from a material or mixture of substances which has a high electrical conductivity,

for example, a metal, such as a metallic element, such as copper, aluminum, silver, gold, platinum, iron; and / or any metal alloys which comprise these elements as a base material, for example a metallic alloy, for example steel; and / or an intermetallic compound.

In one embodiment, one or more electrically conductive structures 118 may be on or above the

Barrier thin film 108 may be formed, for example one (shown), two, three, four or more.

In one embodiment, the electrically conductive

For example, structures 118 may be formed as a conductive silver layer by screen printing, stencil printing, ink jet printing, or other printing methods, such as after forming the barrier thin film 108 on or over the electronic device, such as one

optoelectronic component.

A conductive silver layer may be formed by, for example, drying a silver conductive paste. The electrically conductive substance or the electrical

Conductive mixture of the electrically conductive structure 118 may be used for the formation of the electrically conductive

Structure 118, for example by means of a

Ink jet method, have a moldable state, for example, be dissolved in a solution, dispersion or suspension. The electrically conductive structure 118 may be solidified after surrounding 304 the barrier thin film 108, for example, after applying the electrically conductive structure 118 to or via the barrier thin film 108, for example by evaporation of volatiles of the solution, suspension or dispersion, for example a volatile solvent, thermally, for example by means of heating and / or by means of electromagnetic radiation, for example a radiation-induced, chemical

Network.

In one embodiment, the electrically conductive

Structure 118 has a thickness in the range of several

Microns to a few millimeters, for example in a range of about 1 ym to about 5 mm, for example about 250 ym.

When the electrically conductive structure 118 is electrically contacted with a contact 116 of a voltage source 120 and the second electrode 114 is electrically contacted with another contact 116 of a voltage source 120, the second electrode 114 and the electrically conductive structure 118 can be connected to the

Barrier thin film 108 a capacitor arrangement

train. An applied to the capacitor assembly electrical

Voltage can be high in the electric fields

Barrier thin layer 108 produce. By means of a leakage current measurement of the capacitor arrangement, ie by means of measuring the leakage current through the

Barrier thin film 108, possible defect,

For example, pores, holes or cracks, the

Encapsulation layer are identified.

A barrier thin film 108 which has no dielectric

Shows abnormalities (low leakage current), may not always be good enough for the encapsulation of an organic,

electronic component, such as an OLED, be. For example, the capacitor arrangement no

have obvious diffusion channels, which the

Would weaken capacitor arrangement. Nevertheless, water can pass through the barrier layer 108 into the organic layer

diffuse functional layer structure 112,

For example, along the grain boundaries of the barrier film 108, the electrically conductive structure 118, such as an electrically conductive ink, should have ions that, after forming, for example, applying, a high voltage of the voltage source 120 between them

electrically conductive structure 118 and second electrode 114, or in other words: across the barrier thin film 108, begin in the generated electric field such as

Water molecules through the barrier thin layer 108 to

migrate, for example, to migrate, for example

electrophoretically.

The electrically conductive structure, for example an electrically conductive ink, may also have traces of water. In the generated electric field can in

Dependence of the polarity H3O-ions and / or OH-ions of the

Water accelerates to migrate, with the water also without

+ -

electric field has these H3O ions and OH ions.

In an exemplary embodiment, the ion concentration in the electrically conductive structure 118 can be determined by means of targeted Addition of anions or cations can be increased,

- + For example, hydroxide ions (OH ions), protons (H ions)

+

or oxonium ions (H3O ions), electrons, halides, metal ions, for example metal cations, or ions of an organic substance.

The migration of the ions through the diffusion channels can be identified in one measurement as electrical leakage. By means of the ion migration, by means of the increased ion concentration in the diffusion channels of the barrier thin film 108, the conductivity of the

Increase diffusion channels with time. As a result, the measurable leakage current can be further amplified, whereby the

Measuring the leakage current can be simplified.

In one embodiment, the electrically conductive structure 118 may be used as an electrically conductive layer,

For example, a silver conductive paste, on or over a substrate, such as a glass, may be formed, for example by means of a screen printing, a

Stencil printing, inkjet printing or other printing process, for example, structured. The electrically conductive layer may be in a moldable state, for example not cured. This electrically conductive structure 118 may be laminated to a finished processed OLED such that the electrical

conductive layer on the barrier thin film 108

is arranged, that is a physical contact

having. The glass sheet may have conductor tracks, which may be formed or designed such that for the

Electrodes 110, 114, for example, for the anode 110 and the cathode 114, and the electrically conductive layer of the electrically conductive structure 118 separate electrical contacts 116 are formed. In other words: the

Conductor tracks of the glass pane can be designed such that the electrodes 110, 114 and the electrically conductive structure 118 can be electrically contacted separately. The electrically conductive layer, for example the

Silver conductive paste, on or above the glass pane can

thermally, for example by means of heating, or

radiation-induced, i. be solidified by the influence of light, after the lamination process, for example, cured. The electrically conductive layer may have a thickness in a range of about 1 ym to about 10 mm, for example in a range of about 10 ym to about 1000 ym, for example about 50 ym.

In another embodiment, the electrically conductive structure 118 may be directly, in a physical

Contact, on or above the barrier film 108

be formed. Methods, such as printing processes, where mechanical contact of screens, stencils, masks or other hard objects with the uppermost layer of the OLED could arise, could become one

cause mechanical damage to the barrier layer 108 and should therefore be avoided. The electrically conductive structure 118 may, for example, by means of a directed

Spray method are formed. The electrically conductive structure 118 may be devolatilized by evaporation

Solvent, thermally or by irradiation with electromagnetic radiation,

for example, cured. The electrically conductive structure 118 in this embodiment may have a thickness in a range of about 1 ym to about 10 mm, for example, in a range of about 100 ym to about 1000 ym, for example, about 250 ym.

In another embodiment, directly in

Subsequent to the formation of the barrier thin-film layer 108, for example still in a high vacuum on a finished OLED, a third electrode 118 as electrically conductive is applied through a shadow mask to the barrier thin-film layer 108

Structure 118 are formed, for example a

Silver electrode are evaporated. The shadow mask should be dimensioned such that the mask edges can not cause any mechanical damage to the OLED surface, for example in the optically active region of the OLED. The electrically conductive layer may be in this

Embodiment have a thickness in a range of about 10 nm to about 100 ym, for example, about 200 nm.

In one embodiment, the electrically conductive

Structure 118 include or be formed from silver, such as a silver conductive paste. In an embodiment in which the electrical voltage of the electric

Voltage source 120 and thus the electric field in the barrier thin film 108 is formed such that the second electrode 114 is electrically negative and the electrically conductive structure 118 is electrically positively charged, can form a migration of silver ions, also known as silver migration with silver ions migrating from the anode 118 to the cathode 114. The silver ions can be reduced back to silver at the cathode 114, whereby a fine silver thread (dendrite) can be formed. The silver filament can propagate along the diffusion channel and increase the conductivity by many orders of magnitude. In one embodiment, the electrically conductive

conductive polymer.

In one embodiment, the leakage current measurement may be configured as an impedance spectroscopy.

In various embodiments, a method for determining the permeability of a dielectric layer an optoelectronic component, a device for determining the permeability of a dielectric layer of an optoelectronic component, an optoelectronic component and a method for producing a

Optoelectronic component provided, with which it is possible to measure the leakage currents by thin-film encapsulation of optoelectronic components, such as organic, optoelectronic devices, non-destructive. As a result, organic, optoelectronic components can be recognized and sorted out, which would otherwise form visible damage to the customer through the diffusion of moisture over time.

Claims

claims

A method (300) for determining the permeability of a dielectric layer (108) of an optoelectronic component with respect to water and / or oxygen, the

Method (300) comprising:

• applying an electrical voltage over the

dielectric layer (108);

Measuring a resulting electric current through the dielectric layer (108); and

Determining the permeability of the dielectric

Layer (108) with respect to water and / or oxygen from the measured current. 2. Method (300) according to claim 1,

wherein the dielectric layer (108) acts as a

Barrier thin film (108) is set up.

3. Method (300) according to one of claims 1 or 2,

wherein the dielectric layer (108) is formed on or over an electrically conductive layer (114).

4. Method (300) according to claim 3,

wherein the electrically conductive layer (114) as a

Electrode of the optoelectronic component

is set up.

5. Method (300) according to one of claims 1 to 4,

wherein the optoelectronic device as a

organic solar cell, organic sensor or an organic light emitting diode is set up.

6. Method (300) according to one of claims 1 to 5,

further comprising:

Forming an electrically conductive structure (118) on or over the dielectric layer (108). Method (300) according to claim 6,

wherein a substance of the electrically conductive structure (118) is adapted to provide electrical charge carriers, in particular of ions.

Method (300) according to one of claims 6 or 7, wherein the electrically conductive structure (118) as an electrically conductive coating (118), a

electrically conductive paste (118), an electrically conductive cover (118), a contact electrode (118) or a liquid electrode (118) is arranged.

Method (300) according to one of claims 1 to 8, wherein the electrical voltage is applied such that the electrical charge carriers of the electrically conductive structure (118) of the electrical

conductive structure (118) through the dielectric

Migrate layer (108) to the electrically conductive layer (114).

Device for determining the permeability of a dielectric layer (108) on or above a

electrically conductive layer (114) of a

optoelectronic component, the device

comprising:

• a control unit, set up for modification

an electric current through the dielectric layer; and

A measurement unit configured to measure (308) the electrical current through the dielectric layer.

Device according to claim 10,

wherein the control unit has a contact-forming device, wherein the contact-forming device is set up such that the dielectric layer (108) with an electrically conductive structure (118)

at least partially in physical contact

Surrounding (304) becomes.

Device according to claim 11,

wherein the contact formation device is adapted for applying an electrically conductive structure (118) to or via the dielectric layer (108), in particular for applying an electrically conductive coating (118), for applying an electrically conductive paste (118) to a

Applying an electrically conductive cover (118), an electrical contact electrode (118) or a

Liquid electrode (118) with an electric

having conductive liquid, in particular an electrically conductive solution, an electrically conductive suspension or an electrically conductive dispersion.

Device according to claim 12,

wherein the electrically conductive cover (118) is arranged as an electrically conductive structure (118), wherein the electrically conductive cover (118) has an electrically conductive coating and conductor tracks on or above a substrate.

Device according to one of claims 10 to 13.

wherein the control unit has a voltage source (120) connected to the electrically conductive layer (114) of the electrical layer structure and the

Contact formation unit is electrically connected, wherein the control unit for controlling the electrical

Voltage curve is set up.

15. Device according to one of claims 10 to

the control unit and the measuring unit

are set up that controlling the Voltage curve is coupled with the measurement (308) of the at least one electrical property.

16. Optoelectronic component, comprising:

A carrier (102);

An electrically active region (106) on or above the support (102), the electrically active region comprising: a first electrode (110) on or above the support (102), an organic functional layer structure (112) on or above the support first electrode (110), and a second electrode (114) on or over the organic functional layer structure (112);

A barrier thin film (108) configured to seal the electrically active region (206) with respect to water and / or oxygen; and

• a test electrode (118) on or above the

Barrier thin film (108). 17. Electronic component according to claim 16,

wherein the optoelectronic device as a

organic solar cell, organic sensor or an organic light emitting diode is set up. 18. Method for producing an optoelectronic

component

Providing an optoelectronic component with an electrically active region (106) on or above the carrier (102), wherein the electrically active region comprises a first electrode (110) on or above the carrier

Carrier (102), an organic functional layer structure (112) on or above the first electrode (110), a second electrode (114) on or above the organic functional

Layer structure (112) and has a

Barrier thin film (108); and Forming a test electrode (118) on or over the barrier film (108).