WO2017118574A1

WO2017118574A1 - Method for producing organic light-emitting diodes, and organic light-emitting diodes

Info

Publication number: WO2017118574A1
Application number: PCT/EP2016/082116
Authority: WO
Inventors: Michael Popp; Richard Baisl; Christoph KEFES; Johannes Rosenberger; Andrew Ingle
Original assignee: Osram Oled Gmbh
Priority date: 2016-01-05
Filing date: 2016-12-21
Publication date: 2017-07-13

Abstract

The invention relates to a method designed to produce organic light-emitting diodes (1), having the following steps: - providing a support substrate (2) with a main face (20), - coating the main face (20) with an electric insulation layer (4), - applying a mask layer (8) onto the insulation layer (4), - removing the insulation layer (4) in some locations in a specified manner by means of the mask layer (8), - applying an organic layer stack (5) for generating light such that the mask layer (8) is located between the layer stack (5) and the remaining insulation layer (4) and such that the insulation layer (4) and the layer stack (5) directly follow one another in a direction parallel to the main face (20), - removing the mask layer (8) together with waste material of the layer stack (5), and - applying an encapsulation (7) in a formfitting manner.

Description

description

Process for the production of organic light emitting diodes and organic light emitting diode

It is a process for the production of organic

LEDs indicated. In addition, an organic light emitting diode is specified. One problem to be solved is a method

specify with the organic light emitting diodes with a

efficient encapsulation can be produced.

This object is achieved inter alia by a method having the features of patent claim 1. preferred

Further developments are the subject of the other claims.

In accordance with at least one embodiment, the method produces an organic light-emitting diode, OLED for short. This means that the light emitted by the light-emitting diode during operation is generated completely or predominantly in organic materials.

In accordance with at least one embodiment, the method comprises the step of providing a carrier substrate. The carrier substrate may be mechanically rigid or mechanically flexible. Furthermore, the carrier substrate

translucent, either clear or opaque, or opaque, especially reflective. Preferably, the carrier substrate is a glass plate, a glass sheet, a ceramic or a

Plastic film. Likewise, the carrier substrate

Protective layers and / or frits include or be reflective, about a metal foils designed. In particular, the carrier substrate in the organic light-emitting diode also acts as protection against environmental influences. In accordance with at least one embodiment, this includes

Carrier substrate a main side, which is adapted to carry functional layers of the organic light emitting diode. In particular, the main page is smooth and / or even

designed. A mean roughness of the main page is

preferably at most 50 nm or 20 nm. One of these

Main page opposite, another main page of the

Carrier substrate is in particular adapted to a light emission of light from the organic light emitting diode and can with a roughening to improve a

Be provided Lichtauskopplung.

In accordance with at least one embodiment, the main side is coated with an electrical insulation layer. The main page is preferably structured and largely or completely coated. Full surface does not exclude that small-area edge regions of the carrier substrate, in which the carrier substrate is attached, for example, during coating, not coated. Here and in the

The following is the term insulation layer

used. This does not exclude that the

Isolation layer of several sublayers, the

alternately successive,

is composed. According to at least one embodiment, the

Insulation layer produced from an electrically insulating material. The insulating layer is particularly preferably an inorganic layer. For example the insulating layer of a metal oxide such as a

Alumina, a titanium oxide or a zirconium oxide made. Likewise, the insulating layer may be made of a nitride or oxynitride such as SiNCO _x .

According to at least one embodiment, the

Insulation layer partially or completely over

Atomic layer deposition, abbreviated to ALD, via molecular layer deposition, MLD for short, and / or via chemical vapor deposition, CVD short prepared. As a result, very dense, especially against water vapor and oxygen impermeable layers can be generated, which also provides protection against environmental chemicals.

According to at least one embodiment is on the

Insulation layer applied a mask layer. The mask layer is in particular a photoresist. This may mean that a material of the mask layer is first applied over the entire surface of the insulating layer, then exposed and subsequently partially removed again. After completion of the mask layer, this partially covers the insulation layer. In this case, a region of the carrier substrate which is intended to generate light is preferably free of the mask layer. Likewise, metallic patterns, which have already been applied and / or structured, can be partially or completely covered by the mask layer.

According to at least one embodiment, the

Insulation layer removed in places. Here is the

Insulation layer structured on the basis of the mask layer.

In particular, only such areas remain

Insulation layer on the carrier substrate, in which the

Mask layer is present. In accordance with at least one embodiment, an organic layer stack is applied. The layer stack is configured to generate the light to be emitted during operation of the finished organic light-emitting diode. For this purpose, the layer stack comprises one or more active zones in which radiation is generated by charge carrier recombination. In other words, the layer stack is pumped in normal operation, preferably via direct current.

In accordance with at least one embodiment, the

Layer stack applied over the entire surface of the main page, in particular in the same manner as the insulation layer. This may mean that after applying the

Layer stack itself the mask layer between the

remaining insulation layer and the material for the

Layer stack is located.

According to at least one embodiment, the follow

Insulation layer and the stack of layers, in the direction parallel to the main page, directly on each other and thus touch each other. Here are the insulation layer and the

Layer stack preferably in a common plane parallel to the main page.

In accordance with at least one embodiment, a superfluous material of the layer stack is removed together with the mask layer. After this process step, the material for the layer stack is preferably only in those areas from which the insulation layer was previously removed. In accordance with at least one embodiment, an encapsulation is applied in order to protect the layer stack from environmental influences such as moisture or oxygen. In the

Encapsulation may be a so-called

Thin-film encapsulation, TFE for short, acts. Like the

Isolation layer can be the encapsulation of several

Layers be composed. With regard to the materials and the manufacturing methods for the encapsulation, the same applies as described above for the insulating layer.

In accordance with at least one embodiment, the encapsulation is applied in a form-fitting manner. That is, between the

Encapsulation and the main page then exist

as intended, no cavities or gaps. This does not necessarily exclude that production-related

negligible small gaps with a middle one

Diameter of at most 0.05 ym or 0.02 ym or 5 nm. The encapsulation is thus applied directly to the closest to the main side functional layer or layers of the organic light emitting diode.

In at least one embodiment, the method for producing an organic light-emitting diode is set up and comprises at least the following steps, particularly preferably in the order given:

Providing a carrier substrate having a main side,

- Coating the main side with an electrical

Insulating layer,

Applying a mask layer to the insulation layer, removing the insulation layer in places, predetermined by the mask layer,

- Applying an organic layer stack to

Light generation, so that the mask layer between the Layer stack and the remaining insulation layer is located and so that the insulation layer and the

Layer stacks (5) in the direction parallel to the main page directly follow each other,

Removing the mask layer together with superfluous material of the layer stack, and

- Form-fitting application of an encapsulation.

Surface light sources such as organic light-emitting diodes are increasingly protected against environmental influences by thin-film encapsulation, since these are cost-efficient and have a large surface area

can be separated. In particular, such additional materials for trapping moisture, so-called getters, in a glass lid process are avoidable. In addition, thin-film encapsulations are very thin. The tightness of such Dünnfilmverkapselungen depends on the actual

Material properties but also if necessary

These are about the size and number of dirt particles, as they may not be completely stable with the thin-film encapsulation can be transformed. Likewise, design difficulties may arise if, for example, there are too large height differences or steps between functional layers of the organic light-emitting diode, which is particularly the case when organic substances are used

Photoresists for electrical insulation of an edge region of the layer stack may occur. Also, adhesion between the thin film encapsulant and the corresponding functional layers can be found in conventional organic ones

LEDs are relatively low. By this

described methods, these problems are reduced or avoided. In accordance with at least one embodiment, the insulation layer and the layer stack have the same thickness. This applies in particular with a tolerance of at most 50% or 25% or 10% or 2% of an average thickness of the layer stack in the finished organic light-emitting diode. In other words, the insulating layer and the

Layer stacks equal or substantially the same thickness.

According to at least one embodiment, the

Insulation layer made thin. This may mean that a thickness of the insulating layer is at most 20% or 10% or 5% of a thickness of the layer stack.

By way of example, the insulation layer is then at least 10 nm and / or at most 100 nm or 20 nm thick.

In accordance with at least one embodiment, a first and / or a second current supply for the layer stack is generated. The at least one power supply is to

set up power from external connection points of the

Lead light emitting diode to the stack of layers and impress in the stack of layers. The power supply lines are preferably each composed of several components.

According to at least one embodiment, the first power supply comprises a transparent electrically conductive

Layer. This layer is in particular from a

transparent conductive oxide, short TCO, as generated by ITO. Alternatively, it can be a light-permeable, thin metal layer, for example made of aluminum or silver and having a thickness of at most 25 nm or 15 nm. This layer is preferably in direct contact with the layer stack and is preferably flat, so that this layer over the entire layer stack

can extend, seen in plan view of the main page.

According to at least one embodiment, the first comprises

Power supply, a metallic contact structure, which may have multiple sub-layers. These contact structures preferably do not directly adjoin the layer stack and can, as viewed in plan view of the main side, be located completely next to the layer stack. The contact structure can be directly on the transparent electrically conductive layer

to be appropriate.

According to at least one embodiment, the

Insulation layer between the contact structure and the

Layers stack, in the direction parallel to the main page. In other words, then the contact structures through the

Insulating layer preserved from direct electrical contact with the stack of layers. According to at least one embodiment, the second power supply comprises a power supply line, in particular a

metallic power supply. This power supply is preferably close to the main side, for example, at a distance from the main side of at most 0.5 ym or

0.2 ym. The power supply line is applied in particular directly to a subregion of the transparent electrically conductive layer of the first power supply, wherein this

Part of the remaining areas of the first power supply is preferably electrically isolated.

In accordance with at least one embodiment, the second power supply comprises a surface part. The surface part can be designed to translucent or mirror. Prefers is the surface part in direct, over the entire area in contact with one side of the stack of layers, which faces away from the main page. Thus, the layer stack can be located completely between the surface part and the carrier substrate.

According to at least one embodiment, the second power supply comprises at least one electrical feedthrough. The one or more vias extend from the power supply line in the direction away from the main side through the insulation layer to the surface part. The

Through-connection may consist of one or more metals and is preferably ohmic conductive, as can also apply to all other parts of the first and / or second power supply.

In accordance with at least one embodiment, the encapsulation is applied directly and over the whole area to the surface part of the second

Power supply applied. In this case, the surface part covers the insulation layer in particular only partially. In areas next to the surface part, seen in plan view of the main page, the encapsulation is preferably directly on the insulating layer. In the direction parallel to the main page and in the direction away from the layer stack, the

Isolation layer and the encapsulation flush with each other.

According to at least one embodiment, the

Through-hole and the surface part of the second

Power supply applied by means of another mask layer on the layer stack and on the insulating layer. In this case, the plated-through hole and the surface part are preferably produced together in the same method step, for example by vapor deposition. It can be a material for the feedthrough and the surface part only

All over the surface are applied, excess parts of the material are then removed together with the other mask layer.

According to at least one embodiment, in the

Insulation layer generates at least one opening. The

Opening is intended to be partially or completely filled by the via and optionally also by a material of the encapsulant. For example, the opening which penetrates the insulation layer preferably completely in the direction of the main side passes through

Laser ablation generated. The opening or openings may be created prior to applying the masking layer.

Alternatively, it is possible that the opening and thus also the via only after the creation of the

Encapsulation can be created.

According to at least one embodiment of the projecting

Surface part of the second power supply, the layer stack in regions or all around, in the direction parallel to

Page. Thus, the contact structures of the first

Power supply preferably only partially covered by the surface part, seen in plan view of the main page.

According to at least one embodiment, the

Insulation layer and the encapsulation of the same

Material produced or comprise at least one common material. This common material of the insulating layer and the encapsulation preferably adjoins one another directly. As a result, a good adhesion of the encapsulation on the insulating layer is possible. According to at least one embodiment, the

Insulation layer and / or the encapsulation translucent. Alternatively, the insulating layer and / or the

Encapsulation opaque, in particular reflective, be designed. It is thus possible for the insulating layer and / or the encapsulation to function approximately as a Bragg mirror.

According to at least one embodiment, the

Insulation layer on a greater thickness than the

Encapsulation. For example, the thickness of the

Insulation layer at least 0.1 ym and / or at most 1 ym. In contrast, a thickness of the encapsulation is preferably at least 10 nm or 20 nm and / or at most 0.5 ym or 0.2 ym.

In accordance with at least one embodiment, the removal of the insulation layer takes place dry-chemically. It is possible that the removal of the insulating layer in the same

Reaction chamber is performed as the application of the layer stack. So it can remove the

Insulation layer from those for the layer stack

intended areas simultaneously for cleaning the surface on which the layer stack is applied below serve. This area is, in particular, a side of the transparent, electrically conductive layer of the first power supply which faces away from the main side.

In accordance with at least one embodiment is an area

between the encapsulation and the main side, except for the layer stack, made free of organic materials. Thus, no organic materials are used for electrical isolation of an edge of the

Layer stack used. In accordance with at least one embodiment, the encapsulation is applied continuously. That specifically means that

Encapsulation does not have to over-form any steps having a height of 50% or more or 25% or more or 10% or more of an average thickness of the encapsulant. This is particularly possible because the insulating layer and the

Layer stacks have substantially the same thicknesses. Thus, potential demolition edges and leaks in the encapsulation can be avoided.

According to at least one embodiment, the

Isolation layer has a smaller thickness than that

Layer stack. In this way, it is possible to achieve that a distance between the encapsulation and the main side, in the direction parallel to the main side and away from the layer stack, decreases monotonically.

In addition, an organic light emitting diode is specified. The organic light-emitting diode is preferably produced by a method as stated in connection with one or more of the above-mentioned embodiments. Features for the method are therefore also disclosed for the organic light emitting diode and vice versa.

In at least one embodiment, the organic light emitting diode comprises a carrier substrate having a main side. On the main page there is an organic layer stack for light generation and an inorganic, electrically insulating insulation layer. An encapsulation is located on a side facing away from the main side of the insulating layer and the layer stack. The insulation layer and the layer stack lie in the same plane, in particular parallel to the main side, have the same thickness with a tolerance of at most 25% of an average thickness of the layer stack, do not overlap with each other, and directly follow each other in a direction parallel to the main side.

The invention also relates to a further method for producing an organic optoelectronic component.

Organic-based optoelectronic components,

so-called organic optoelectronic components are finding increasing popularity. For example, organic light-emitting diodes (OLEDs) are increasingly being used in general lighting, for example as area light sources. But organic solar cells are also increasingly used.

An organic optoelectronic component, for example an OLED, may comprise an anode and a cathode and, between them, an organic functional layer system. The organic functional layer system may include one or more emitter layers in which electromagnetic radiation is generated, a charge carrier pair generation layer structure of two or more each

Charge pair generation charge generating layer (CGL) and one or more electron block layers, also referred to as hole transport layer (HTL), and one or more hole block layers, also referred to as electron transport layers ("electron transport layer "- ETL) to direct the flow of current.

In the case of surface light sources, encapsulation technology increasingly uses thin-film encapsulation. A problem However, there are particles that are before or during the

Forming the corresponding thin-film encapsulation on a substrate for forming the thin-film encapsulation and / or get into the thin-film encapsulation. Such particles can then be completely or partially transformed by the Dünnfilmverkapselung. Depending on the size and number of particles, this can lead to one or more leaks. This contributes to the fact that moisture and / or oxygen can penetrate the thin-layer encapsulation and / or optionally one or more barrier layers and can spread laterally unhindered along the interfaces of the corresponding layers. As a result, over time, dark spots on the luminous surface can become larger

arise, which can lead to destruction of the illuminated area and / or reduced storage stability.

An already known approach is to divide the OLED into segments that are no longer perceived as separated from a certain viewing distance, so that despite the segmentation of the OLED the luminous area as

closed luminous surface is perceived. such

Segments, for example, a length of 50 ym to 1 ym and / or a distance of less than 10 ym

have each other. However, a problem here is a precise training and in particular a precise

Structuring the individual layers this smaller

Segments and / or separation areas between the individual

Segments, in particular on condition none

incorporate additional diffusion paths for air and / or moisture into the layered structure of the OLED. For example, in the conventional production of OLEDs with a masking accuracy of 100 ym, an exact structuring of buried barrier layers is not possible. An additional or alternative approach to tackling the problem with the particles is very thick

Buffer and / or barrier layers, for example HMDSO layers, Paryllene layers, MLD / ALD layer sequences, thick CVD layers, for example greater than 5 μm. Problems here are that process times and / or cleaning times are very long and incompatible with short cycle times and / or internal stresses in the corresponding thick layers are too high. Another approach is the

Particle reduction, whereby never all particles are avoidable. To increase or strengthen the measures for

Particle reduction increases the cost of producing the OLED.

An object of the invention is to provide a further method for producing an organic optoelectronic component, which can be carried out quickly, easily and / or inexpensively and / or which contributes to the fact that the

organic optoelectronic device a long time

Lifespan and / or has a long shelf life.

An object is achieved according to an aspect of the invention by a further method for producing an organic optoelectronic component, in which: a substrate having a first electrode layer is provided; a protective layer structure over the entire surface on the first

Electrode layer is formed; a first shadow mask having at least one recess on which

Protective layer structure is arranged; the

Protective layer structure is removed in the region of the recess by means of etching; in the region of the recess in which the protective layer structure has been removed, an organic functional layer structure is formed without first removing the first shadow mask; the first

Shadow mask is removed and a second electrode layer over the organic functional layer structure

is trained.

The patterning of the protective layer structure by means of the shadow mask and the formation of the organic functional layer structure by means of the shadow mask without an intermediate removal of the shadow mask allows both processes to be carried out in a process chamber without having to remove the substrate with the corresponding layers from the process chamber, and that the shadow mask while forming the organic

functional layer structure is located exactly where it should be arranged. The latter causes the

Protective layer structure and the organic functional

Layer structure are arranged very precisely to each other, which is not possible so precisely with a conventional method. This makes it possible to form particularly small segments and / or form the segments so that they are only a very small distance from each other. This generally contributes to the fact that the individual segments from the outside not very good or not at all with the naked eye

can be perceived. In case of failure of one of the segments, this contributes to a luminous image of the

corresponding OLED is not noticeably changed. It can also be a time-consuming alignment of a second

Shadow mask or on a renewed elaborate alignment of the first shadow mask for forming the organic functional layer structure, for example, with a costly alignment device omitted. It should be noted that even with a very complex and costly alignment of the corresponding shadow mask, such precision can not be achieved as if the shadow mask is not removed and is not rearranged. In other words, that's not removing the

Shadow mask between the steps of etching the

Protective layer structure and the formation of the organic functional layer structure on the finished organic optoelectronic device detectable by checking how exactly the structured

Protective layer structure to the deposited organic

Material 50 fits.

Overall, so can the process for producing the

organic optoelectronic device particularly fast, very easy and particularly inexpensive to be performed. In addition, the method for producing the organic optoelectronic component contributes to the fact that the organic optoelectronic component has a long life

Lifespan and / or has a long shelf life.

According to a development, the substrate with the

Protective layer structure introduced into a process chamber, in which there is a negative pressure relative to an environment of the process chamber. The first shadow mask is placed in the process chamber on the protective layer structure. After this

Forming the organic functional layer structure becomes the substrate with the structured one

Protective layer structure and the organic functional layer structure removed from the process chamber. Before or after removal of the substrate from the process chamber, the first shadow mask is removed. This causes significantly fewer particles to enter the layer structure than in a conventional method for producing a organic optoelectronic device. It should also be noted that the fact that the substrate with the

corresponding layers between the etching of the

Protective layer structure and the formation of the organic functional layer structure is not removed from the process chamber, such a low degree of contamination is possible, as it would not be possible if the substrate with the corresponding stories in between from the

Process chamber would have been removed. In other words, this is not removal of the substrate with the layers of the

Process chamber between the steps of etching the

Protective layer structure and the formation of the organic functional layer structure detectable on the finished organic optoelectronic device by a degree of contamination between the alleged layers produced in the process chamber is checked.

For carrying out the individual steps, the process chamber can have different sub-chambers into which the substrate can be moved with the corresponding layers and which can be completely or partially separated from one another and in which optionally different negative pressures can prevail. The sub-chambers may optionally be interconnected by means of suitable locks, so that the substrate with the corresponding layers not from the

Process chamber must be removed when it comes from one

Part chamber is brought to the other sub-chamber.

According to one development is about the second

Electrode layer formed an encapsulation. The

Encapsulation helps to prevent dirt, such as particles, and / or harmful substances, such as air and / or moisture, from coming into contact with the body organic functional layer structure and / or the first and / or second electrode layer come.

According to a development, the negative pressure in the

Process chamber to a vacuum having a pressure of lO ^ mbar or less. The negative pressure in the process chamber can be in a range, for example, from 10 -5 mbar to 500 mbar, for example from 10 -5 mbar to 1 mbar. According to a development is used in the etching of

Protective layer structure, the first electrode layer as Ätzstoppschicht. This makes it possible to dispense with the formation of a separate Ätzstoppschicht. This helps to make the process simple, quick and / or cost effective.

According to a development, the substrate with the

Protective layer structure before introduction into the

Process chamber cleaned. This contributes to the fact that very little particles are arranged on the substrate when the

Substrate is introduced into the process chamber and / or when the protective layer structure is formed.

According to a development, the first electrode layer has a first electrode, which has ITO and / or TCO, and at least one contact section, which has a metallization and / or contacting. This helps to make the process simple, quick and / or cost effective.

According to a development, the first shadow mask has a plurality of recesses and during the etching, the

Protective layer structure accordingly in the majority of Recesses removed and subsequently the organic functional layer structure in the corresponding

Recesses and distant areas of the

Protective layer structure formed. This allows a multitude of OLED segments with a shadow mask

to produce.

According to a development, the organic functional layer structure is formed by means of vapor deposition. This helps to make the process simple, quick and / or cost effective. In particular, this contributes to the fact that the organic functional

Layer structure in a simple manner, can be formed very precisely.

According to one development, the protective layer structure has a first planarization layer and / or a first planarization layer

Barrier layer up. This contributes to the

Protective layer structure unfolds a particularly high protective effect. If the first planarization layer and the first barrier layer are formed, then

For example, the first barrier layer may be formed over the first planarization layer. According to a development, the substrate has a carrier on which the first electrode layer is formed. This can contribute to the method for producing the organic optoelectronic component being particularly easy to carry out. In addition, if the carrier is formed of an electrically insulating material, this can enable the first electrode layer to be electrically insulated from an environment of the organic optoelectronic component. According to a further development, the encapsulation has a second barrier layer, a second planarization layer over the second barrier layer and / or a third barrier layer over the second planarization layer. This helps to ensure that the encapsulation is particularly high

Encapsulation effect unfolded. In particular, such an encapsulation contributes to the organic

optoelectronic component is particularly well protected against ingress of air and / or moisture.

According to a development, the first shadow mask has webs which delimit the recesses in the lateral direction and which have a width in a range from 1 μm to 100 μm, for example from 5 μm to 50 μm, for example from 10 μm to 20 μm. The entirety of the webs forms the shadow mask. The shadow mask can only have equal wide webs or the shadow mask can have different widths of webs. For example, the shadow mask in the area in which the protective layer structure is to be removed and / or in which the organic functional

Layer structure to be formed, have very thin webs, for example, with a width in the

aforementioned areas, and the shadow mask can outside these areas, for example, at one edge of the

Shadow mask have significantly wider webs,

For example, for the mechanical stabilization of

Shadow mask, for example, with a width of 0.1 mm to 10 mm.

According to a development after etching of the

Protective layer structure, after forming the organic functional layer structure and after removing the first shadow mask the remaining protective layer structure thicker than the organic functional layer structure.

According to a development after etching of the

Protective layer structure, after forming the organic functional layer structure and after removing the first shadow mask, the remaining protective layer structure thinner than the organic functional layer structure. According to a development after etching of the

Protective layer structure, after forming the organic functional layer structure and after removing the first shadow mask, the remaining protective layer structure is the same thickness as the organic functional one

Layer structure.

The aspects of the further method can be summarized as follows: Aspect A) Further method for producing an organic optoelectronic component (10), in which

a substrate having a first electrode layer (14)

provided,

a protective layer structure (40, 42) is formed over the entire surface of the first electrode layer (14),

a first shadow mask (46) having at least one recess (48) on which the protective layer structure (40, 42) is arranged,

the protective layer structure (40, 42) in the region of

Recess (48) is removed by etching,

in the region of the recess (48) in which the

Protective layer structure (40, 42) has been removed, a

formed organic functional layer structure (22) without first removing the first shadow mask (46),

Subsequently, the first shadow mask (46) is removed and a second electrode layer (52) is formed over the organic functional layer structure (22).

Aspect B) Further method according to aspect A), in which the substrate with the protective layer structure (40, 42) is introduced into a process chamber, in the opposite to a

A negative pressure prevails around the process chamber, and the first shadow mask (46) in the process chamber on the

Protective layer structure (40, 42) is arranged, and after forming the organic functional layer structure (22) the substrate with the structured

Protective layer structure (40, 42) and the organic

functional layer structure (22) is removed from the process chamber, and before or after removal of the substrate from the process chamber, the first shadow mask (46) is removed.

Aspect C) A further method according to one of the preceding aspects, wherein an encapsulation (54, 56, 58) is formed over the second electrode layer (52). Aspect D) Another method according to any one of the preceding aspects, wherein the negative pressure in the process chamber

Vacuum having a pressure of 10- ^ mbar or less. Aspect E) Another method according to any one of the preceding

Aspects in which the first electrode layer (14) serves as the etching stop layer when etching the protective layer structure (40, 42). Aspect F) A further method according to any one of the preceding aspects, wherein the substrate having the protective layer structure (40, 42) is cleaned prior to introduction into the process chamber.

Aspect G) A further method according to one of the preceding aspects, wherein the first electrode layer (14) comprises a first electrode (20) comprising ITO and / or TCO, and at least one contact portion (32, 34) having a metallization and / or Having contact.

Aspect H) A further method according to any one of the preceding aspects, wherein the first shadow mask (46) has a plurality of recesses (48) and during etching

Protective layer structure (40, 42) accordingly in the

A plurality of recesses (48) is removed and subsequently the organic functional layer structure (22) is formed in the respective recesses (48) and remote areas of the protective layer structure (40, 42).

Aspect I) Another method according to any of the preceding aspects, wherein the organic functional

Layer structure (22) is formed by vapor deposition.

Aspect J) A further method according to one of the preceding aspects, wherein the protective layer structure (40, 42) comprises a first planarization layer (40) and / or a first planarization layer (40)

Barrier layer (42).

Aspect K) A further method according to one of the preceding aspects, wherein the substrate has a carrier (12) on which the first electrode layer (14) is formed. Aspect L) A further method according to one of the preceding aspects, wherein the encapsulation (54, 56, 58) has a second barrier layer (54), a second planarization layer (56) over the second barrier layer (54) and / or a third barrier layer (58 ) over the second planarization layer (56).

Aspect M) A method according to any one of the preceding aspects, wherein the first shadow mask (46) has webs bounding the recesses (48) in the lateral direction and having a width in a range of 1 ym to 100 ym, for example 5 ym to 50 ym, for example from 10 ym to 20 ym.

Aspect N) A further method according to any preceding aspect, wherein after the etching of the protective layer structure (40, 42), after the formation of the organic functional layer structure (22) and after the removal of the first shadow mask (46), the remaining protective layer structure (40, 42) is thicker than the organic functional one

Layer structure (22).

Aspect O) Another method according to any one of aspects A) to M), wherein after the etching of the protective layer structure (40, 42), after forming the organic functional

Layer structure (22) and after removing the first shadow mask (46), the remaining protective layer structure (40, 42) is thinner than the organic functional

Layer structure (22).

Aspect P) Further method according to one of the aspects A) to M), in which after the etching of the protective layer structure (40, 42), after forming the organic functional

Layer structure (22) and after removing the first shadow mask (46), the remaining protective layer structure (40, 42) is the same thickness as the organic functional layer structure (22).

Hereinafter, a method described herein and an organic light-emitting diode described here with reference to the drawings by means of embodiments closer

explained. The same reference numerals indicate the same elements in the individual figures. However, there are no scale relationships shown, but individual elements can be exaggerated for better understanding

be shown.

Show it:

Figure 1 is a schematic sectional view of a

Embodiment of an organic light-emitting diode described here,

Figures 2 to 13 are schematic sectional views of

Process steps described here

Method for producing organic light-emitting diodes described here,

Figure 14 is a schematic sectional view of a

Modification of an organic light-emitting diode, Figure 15 is a side sectional view of a

Embodiment of an organic

optoelectronic component, Figure 16 is a side sectional view of an embodiment of an organic

optoelectronic component in a first state during a method for producing the organic optoelectronic component,

FIG. 17 is a side sectional view of the organic optoelectronic component according to FIG. 16 in a second state during the method for producing the organic optoelectronic element

Component,

FIG. 18 is a side sectional view of the organic optoelectronic component according to FIG. 17 in a third state during the method of FIG

Producing the organic optoelectronic

Component,

FIG. 19 is a side sectional view of the organic optoelectronic component according to FIG. 18 in a fourth state during the method for producing the organic optoelectronic element

FIG. 20 is a side sectional view of the organic optoelectronic component according to FIG. 19 in a fifth state during the method for producing the organic optoelectronic component

Component,

FIG. 21 is a side sectional view of the organic optoelectronic component according to FIG. 20 in a sixth state during the method of FIG Producing the organic optoelectronic component,

FIG. 22 is a side sectional view of the organic optoelectronic component according to FIG. 21 in a seventh state during the method for producing the organic optoelectronic component. FIG. 23 is a side sectional view of the organic optoelectronic component according to FIG. 22 in an eighth state during the method for producing the organic optoelectronic element Component,

FIG. 24 is a side sectional view of the organic optoelectronic component according to FIG. 23 in a ninth state during the method for producing the organic optoelectronic component,

FIG. 25 is a side sectional view of the organic optoelectronic component according to FIG. 24 in a tenth state during the process for producing the organic optoelectronic device

Component,

FIG. 26 is a side sectional view of the organic optoelectronic component according to FIG. 25 in an eleventh state during the method for

Producing the organic optoelectronic component, FIG. 27 is a side sectional view of the organic optoelectronic component according to FIG. 26 in a twelfth state during the method for producing the organic optoelectronic component,

FIG. 28 is a side sectional view of the organic optoelectronic component according to FIG. 27 in a thirteenth state during the method for producing the organic optoelectronic element

Component,

FIG. 29 shows a side sectional view of the organic optoelectronic component according to FIG. 28 with a dirt particle,

Figure 30 is a side sectional view of a

conventional organic optoelectronic device with a dirt particle,

FIG. 31 shows a schematic sequence of a

Embodiment of a masking process,

Figure 32 is a schematic flow of a conventional

Masking process,

FIG. 33 is a detailed side sectional view of an alternative embodiment of the organic optoelectronic device in the ninth state during the method of FIG

Producing the organic optoelectronic component, FIG. 34 is a detailed side sectional view of an alternative embodiment of the organic optoelectronic device in the ninth state during the method of FIG

Producing the organic optoelectronic component,

FIG. 35 is a detailed side sectional view of an alternative embodiment of the organic optoelectronic device in the ninth state during the method of FIG

FIG. 36 shows a detailed lateral sectional illustration of an alternative exemplary embodiment of the organic optoelectronic component in the ninth state during the method for producing the organic optoelectronic component

Producing the organic optoelectronic component,

FIG. 37 is a detailed side sectional view of an alternative embodiment of the organic optoelectronic device in the ninth state during the method of FIG

Producing the organic optoelectronic component,

FIG. 38 is a detailed side sectional view of an alternative embodiment of the organic optoelectronic device in the ninth state during the method of FIG Producing the organic optoelectronic component,

FIG. 39 is a detailed side sectional view of an alternative embodiment of the organic optoelectronic device in the ninth state during the method of FIG

Producing the organic optoelectronic component,

FIG. 40 is a detailed side sectional view of an alternative embodiment of the organic optoelectronic device in the ninth state during the method of FIG

Producing the organic optoelectronic

Component,

FIG. 41 is a detailed side sectional view of an alternative embodiment of the organic optoelectronic device in the ninth state during the method of FIG

FIG. 42 shows a detailed side sectional view of an alternative exemplary embodiment of the organic optoelectronic component in the tenth state during the method for producing the organic optoelectronic component

Producing the organic optoelectronic component,

Figure 43 is a detailed side sectional view of an alternative embodiment of the organic optoelectronic device in the tenth state during the process for producing the organic optoelectronic

Component.

In Figure 1, an embodiment of one is here

described organic light emitting diode 1 shown. On a substrate 2 with a main side 20 is an electrically conductive, radiation-transmissive layer which is divided into two regions 3a, 6d. On the area 3a, which belongs to a first power supply 3, there is an organic layer stack 5 for generating light during operation of the organic light emitting diode 1. The first power supply 3 further comprises a metallic contact structure 3b, via which the layer 3a external

is electrically contactable. A second power supply 6 includes a particular metallic power supply line 6a, which is applied to the area 6d. Over a

Through-hole 6b is a surface part 6c of the second

Power supply 6 electrically contacted. The layer stack 5 is located between the surface part 6c and the layer 3a. In the direction parallel to the main side 20 is located directly next to the layer stack 5, an insulating layer 4. The insulating layer 4 is partially covered by the surface portion 6c. An encapsulation 7, in particular a so-called thin-film encapsulation, is applied directly over the entire surface of the insulating layer 4 and the surface part 6c. In Figure 1, the encapsulation 7 and the insulating layer 4 are separated by a dotted line from each other. The encapsulation 7 and the insulation layer 4 are preferred from the same material or from the same

Material combination produced.

According to FIG. 1, the insulating layer 4 is slightly thinner than the layer stack 5. Differing from the illustration in FIG. 1, the insulating layer 4, which in particular covers a region between the contact structures 3b and

Layer stack 5 completely fills, relative to

Layer stack 5 seen to be designed thin and in this case have a thickness of only a few 10 nm. A thickness of the layer stack 5 is usually at least 0.2 ym and / or at most 1 ym.

As in all other embodiments, a protective layer 11 is optionally applied to the encapsulation 7. The protective layer 11 can also serve as a planarization layer. For example, the protective layer 11 is made of a

Made of acrylic, an epoxy and / or an adhesive, wherein the protective layer 11 may be formed homogeneously from a single material or from several different materials, even in individual partial layers.

In the figures 2 to 13 is an example of a

Manufacturing method for such an organic light emitting diode 1 illustrated. The figure parts A are respectively

directed in particular to the design of the first power supply 3 and the figure parts P on the design of the second power supply 6. It is not absolutely necessary that the process steps of the figure parts A and B

are performed simultaneously with each other, but this is particularly preferably the case. According to FIG. 2A, the contact structure 3b is locally applied to the layer 3a. Accordingly, see Figure 2B, the power supply line 6a is applied to the layer 6d. The layers 3a, 6d are electrically separated from one another by a gap which extends to the main side 20.

Optionally, the layer 6d may also be removed in the region of the power supply line 6a. The power supply line 6a and the

Contact structure 3b may each comprise a plurality of metal layers, in particular a layer sequence Mo / Al / Mo or Cr / Al / Cr or Ag / Mg or Ag / Al. The same can be said for the

Through-connection 6b and / or apply to the surface part 6c. The first power supply 3 is in this case designed, for example, as an anode and the second power supply 6 as a cathode.

According to FIGS. 3A and 3B, the entire surface of FIG

Insulation layer 4 applied, such as by means of ALD, MLD or CVD. The insulating layer 4 is produced in particular from a metal oxide and / or a nitride, for example a silicon-containing nitride.

After the application of the insulation layer 4, an opening 46 for the through-connection 6b can optionally be produced, see FIG. 3B. Notwithstanding the representation in FIGS. 2 to 13, the opening 46 and the contact 6b can also be made later, in particular after the method step of FIG. 11.

According to Figure 4, a mask layer 8 on the

Insulation layer 4 applied. The mask layer 8 covers only a part of the insulating layer 4. Specifically, the contact structures 3b and the power supply line 6a become

completely covered by the insulating layer 4. Preferably, the gap between the layers 3a, 6d is partially or completely covered by the mask layer 8.

Notwithstanding the illustration in FIG. 4B, the opening 46 can be partially or completely filled by a material for the mask layer 8, in particular a photoresist.

FIG. 5 shows that the insulation layer 4 in areas not covered by the mask layer 8 is completely removed, so that the layer 3a, in particular

only the layer 3a, is exposed. The removal of the insulating layer 4 is preferably carried out by

Dry etching and / or UHV etching, in particular

without any distinction with respect to the mask layer 8 and material-selective to the layer 3a.

This removal of the insulating layer 4 simultaneously serves as a cleaning of the layer 3a for the subsequent application of the organic layer stack 5, see FIG

Materials for the layer stack 5 are applied over the entire surface, in particular vapor-deposited. Thus, the bordered

Layer stack 5, in the direction parallel to the main side 20, directly to the insulating layer 4, see also the

elliptical mark in Figure 7A. The coating with the layer stack 5 and the

Structuring of the insulation layer 4 thus takes place with the same mask layer 8. Thus, the layer stack 5 and the insulation layer 4 can be positioned relative to one another exactly and with only negligible tolerances.

As shown in FIG. 7, the mask layer 8 and unnecessary material for the layer stack 5 are removed. The layer stack 5 remains in a slightly greater thickness on the carrier substrate 2 than the insulating layer 4.

According to FIG. 8, a further mask layer 9 is applied, which leaves the layer stack 5 and the opening 46 completely free and partially covers the insulation layer 4.

On the basis of the further mask layer 9, the surface part 6c and the via 6b are produced, preferably together in a single process step.

As shown in Figure 10, below the further mask layer 9 and excess material for the

Surface part 6c removed.

In FIG. 11 it can be seen that the entire surface of the encapsulation 7 rests on the surface part 6 c and the insulation layer 4

is applied, in particular by means of ALD, MLD and / or CVD. The encapsulation 7 has no larger steps

overcome, since the insulating layer 4 serves as a planarization with respect to the layer stack 5 and the surface portion 6c preferably has only a small thickness of, for example, at most 0.2 ym or 0.15 ym. As a result, a particularly dense encapsulation 7 can be achieved. Because the

Insulation layer 4 and the encapsulation 7 may be formed of the same material, is also a good adhesion of the encapsulation 7 on the insulating layer 4th

guaranteed. According to FIG. 12, the protective layer 11 is applied to the encapsulation 7. To get to the organic light emitting diode 1 of Figure 1, optionally the protective layer 11, the

Encapsulation 7 and / or the insulating layer 4 in the area the contact structures 3b and the power supply line 6a subsequently removed.

In the organic light emitting diode 1 may be a

Area light source with a single coherent light emitting area act as shown in the figures. Notwithstanding this, there may be a plurality of regions which emit electrical light to controllable light. The power supply lines 3, 6 are to be designed accordingly.

FIG. 13A shows that dirt particles 12 can deposit after the application of the insulation layer 4.

Such dirt particles 12 can be a quality of

Layer stack 5 and / or the encapsulation 7

affect. By etching the insulation layer 4, see FIG. 13B according to FIG. 13C, such dirt particles 12 in the region of the layer stack 5 can be removed. This is particularly possible if the etching of the insulating layer 4 and the production of the layer stack 5 in the same

Reaction volume takes place.

FIG. 14 shows a modification 1 '. In this modification, no insulation layer according to the figures 1 to 13 is present. Instead, it's an organic one

Insulation material 10 at an edge region of

Layer stack 5 available. The encapsulation 7 undergoes a relatively large step at an edge of the layer stack 5. As a result, the encapsulation 7 may be impaired. In addition, the layer stack 5 partially covers the insulation material 10, so that also a size of a luminous area

is reduced, in particular because positioning tolerances with respect to the power supply lines 3, 6, of the insulating material 10 and the layer stack 5 relative to each other, which are usually in the range of 0.1 mm to 0.6 mm.

With the method described here, an exact positioning of the encapsulation 7 and the insulation layer 4 to the layer stack 5 by in situ etching, in particular dry etching, is given, so that no consideration in this regard in the design is more necessary, which can increase an active luminous area. In addition, a defined covering of the organic layer stack by an upper electrode layer, in particular the surface part 6c,

allows. Thus, the thin-film encapsulation 7 is defined on the upper electrode, in a structure without

Insulation layer, see Figure 14, this is not possible. In addition, weak points in the barrier layers 4, 7 by avoiding different thicknesses and large

Height differences can be reduced. Furthermore, an additional particle load can be achieved by the generation of the insulation layer 4 in a substrate generation process, in particular by saving a mask process. Particles can be removed in the in-situ etching process directly before the organic deposition, so that the insulating layer 4 in the region of

Layer stack 5 can simultaneously act as a sacrificial layer and / or particle trapping layer. In the case of the method specified here, structured masks are also multiple times

can be used or used only once, with / without in-situ cleaning by, for example, dry etching processes. The insulating layer 4 can be processed at elevated temperatures in the range from 200 ° C. to 300 ° C., so that it can be produced significantly more densely than the upper encapsulation 7, during the production of which temperatures of at most approximately 100 ° C. may be present so as not to admit the layer stack 5

affect. By adapting the insulation layer 4 in the thickness of the layer stack 5, an optimized seal is possible without large differences in height

available. Finally, there are greater freedom in the electrical contact, so this can be done laterally or through surfaces.

Because components of embodiments may be positioned in a number of different orientations, the directional terminology is illustrative and is in no way limiting. It should be understood that other embodiments may be utilized and structural or logical changes may be made without departing from the scope of the present invention. It should be understood that the features of the various embodiments described herein may be combined with each other unless specifically stated otherwise. The following detailed description is therefore not to be taken in a limiting sense, and the scope of the present invention is defined by the appended claims. In the figures are identical or similar

Elements provided with identical reference numerals, as appropriate.

An organic optoelectronic component may emit an organic electromagnetic radiation

Component or an organic electromagnetic radiation absorbing component. An organic one

Electromagnetic radiation absorbing device may be, for example, an organic solar cell. One

emitting organic electromagnetic radiation

Component may in various embodiments, an organic electromagnetic radiation emitting

Be semiconductor device and / or as an organic emitting electromagnetic radiation diode or as an organic electromagnetic radiation emitting

Transistor be formed. The radiation can

For example, be light in the visible range, UV light and / or infrared light. In this context, the

emitting organic electromagnetic radiation

Component, for example, as an organic light emitting diode (Organic Light Emitting Diode, OLED) or as

be formed organic light emitting transistor. The organic light-emitting component can be used in

various embodiments be part of an integrated circuit. Furthermore, a plurality of

Be provided light emitting devices,

For example, housed in a common housing.

FIG. 15 shows an exemplary embodiment of an organic optoelectronic component 101, the organic one

Optoelectronic component 101 has a carrier 121. The carrier 121 may be translucent or transparent. The carrier 121 serves as a carrier element for

electronic elements or layers, for example

light-emitting elements. The carrier 121 may

For example, plastic, metal, glass, quartz and / or have a semiconductor material or be formed therefrom.

Further, the carrier 121 may be a plastic film or a laminate having one or more plastic films

have or be formed from it. The carrier 121 may be mechanically rigid or mechanically flexible. On the carrier 121 is an opto-electronic

Layer structure formed. The optoelectronic

Layer structure has a first electrode layer 14 having a first contact portion 16, a second Contact portion 18 and a first electrode 201 has. The carrier 121 having the first electrode layer 14 may also be referred to as a substrate. Between the carrier 121 and the first electrode layer 14, a barrier layer, not shown, for example, a barrier thin film may be formed.

The first electrode 201 is separated from the first contact portion 16 by means of an electrical insulation barrier 21

electrically isolated. The second contact portion 18 is connected to the first electrode 201 of the optoelectronic

Layer structure electrically coupled. The first electrode 201 may be formed as an anode or as a cathode. The first electrode 201 may be translucent or transparent

be educated. The first electrode 201 has a

electrically conductive material, for example metal and / or a conductive transparent oxide (TCO) or a layer stack of several layers comprising metals or TCOs. The first

For example, electrode 201 may comprise a layer stack of a combination of a layer of a metal on a layer of a TCO, or vice versa. An example is a silver layer deposited on an indium tin oxide (ITO) layer (Ag on ITO) or ITO-Ag-ITO multilayers. The first electrode 201 may comprise, alternatively or in addition to the mentioned materials: networks

Metallic nanowires and particles, for example of Ag, networks of carbon nanotubes, graphene particles and layers and / or networks of semiconducting

Nanowires.

Above the first electrode 201 is an organic

functional layer structure 22 of the optoelectronic Layer structure formed. The organic functional layer structure 22 may, for example, have one, two or more partial layers. For example, the organic functional layer structure 22 may include a hole injection layer, a hole transport layer, an emitter layer, a

Electron transport layer and / or a

Having electron injection layer. The

Hole injection layer serves to reduce the band gap between the first electrode and hole transport layer. In the hole transport layer, the hole conductivity is larger than the electron conductivity. The hole transport layer serves to transport the holes. In the electron transport layer, the electron conductivity is larger than that

Hole conductivity. The electron transport layer serves to transport the electrons. The

Elektroneninjektionsschicht serves to reduce the

Band gap between second electrode and

Electron transport layer. Further, the organic functional layer structure 22 may be one, two or more

functional layer structure units, each having the said sub-layers and / or further intermediate layers.

Over the organic functional layer structure 22 is a second electrode 23 of the optoelectronic

Layer structure is formed, which is electrically coupled to the first contact portion 16. The second electrode 23 may be formed according to any one of the configurations of the first electrode 201, wherein the first electrode 201 and the second electrode 23 may be the same or different. The first electrode 201 serves, for example, as the anode or cathode of the optoelectronic layer structure. The second electrode 23 is corresponding to the first one Electrode as the cathode or anode of the optoelectronic

Layer structure.

The optoelectronic layer structure is an electrically and / or optically active region. The active region is, for example, the region of the optoelectronic component 101 in which electric current flows for the operation of the organic optoelectronic component 101 and / or in which electromagnetic radiation is generated or absorbed. On or above the active area, a getter structure (not shown) may be arranged. The getter layer can be translucent, transparent or opaque. The getter layer may include or be formed of a material that absorbs and binds substances that are detrimental to the active area.

Above the second electrode 23 and partially over the first contact portion 16 and partially over the second one

Contact section 18, an encapsulation layer structure 24 of the optoelectronic layer structure is formed, which encapsulates the optoelectronic layer structure. The

Encapsulation layer structure 24 may be formed as a barrier layer, for example as a barrier thin layer. The encapsulation layer structure 24 may also be referred to as

Thin-layer encapsulation may be referred to. The

Encapsulation layer structure 24 provides a barrier to chemical contaminants, particularly water (moisture) and oxygen. The encapsulant layer structure 24 may be in the form of a single layer, a layer stack, or a single layer

Layer structure be formed. The

Encapsulation layer structure 24 may include or be formed from: alumina, zinc oxide, zirconia, Titanium oxide, hafnium oxide, tantalum oxide, lanthanum oxide, silicon oxide, silicon nitride, silicon oxynitride,

Indium tin oxide, indium zinc oxide, aluminum doped zinc oxide, poly (p-phenylene terephthalamide), nylon 66, and mixtures and alloys thereof. If necessary, the first

Barrier layer on the support 121 corresponding to a configuration of the encapsulation layer structure 24th

be educated. In the encapsulation layer structure 24, a first recess is above the first contact portion 16

Encapsulation layer structure 24 and over the second

Contact portion 18 a second recess of the

Encapsulation layer structure 24 is formed. In the first recess of the encapsulation layer structure 24, a first contact region 32 is exposed and in the second

Recess of the encapsulation layer structure 24, a second contact region 34 is exposed. The first

Contact region 32 serves for electrically contacting the first contact section 16 and the second contact region 34 serves for electrically contacting the second

Contact section 18.

Above the encapsulation layer structure 24 is a

Adhesive layer 36 is formed. The adhesive layer 36 comprises, for example, an adhesive, for example an adhesive, for example a laminating adhesive, a lacquer and / or a resin. The adhesive layer 36 may

For example, have particles that scatter electromagnetic radiation, such as light-scattering particles.

Above the adhesive layer 36 is a cover body 38

educated. The adhesive layer 36 serves for fastening of the covering body 38 on the encapsulation layer structure 24. The covering body 38 has, for example, plastic, glass and / or metal. For example, the cover body 38 may be formed substantially of glass and a thin

Metal layer, such as a metal foil, and / or a graphite layer, such as a graphite laminate, have on the glass body. The cover body 38 serves to protect the organic optoelectronic component 101,

for example, against mechanical forces from the outside. Furthermore, the cover body 38 for distributing and / or

Dissipating heat that is in the organic

optoelectronic component 101 is generated.

For example, the glass of the covering body 38 can serve as protection against external influences, and the metal layer of the covering body 38 can serve for distributing and / or dissipating the heat arising during operation of the organic optoelectronic component 101.

The organic optoelectronic component 101 is

segmented. In other words, the organic

optoelectronic component 101 a plurality of lateral

juxtaposed segments on. The segments of the organic optoelectronic component 101 are partial regions of the organic optoelectronic component 101 that are completely or partially separated in the lateral direction, but which can have the same or similar structure, in particular the same or similar layer sequence, in the vertical direction. The segments or one or more subsets of the segments can be controlled the same and / or together and or be the same or at least similar.

For example, the segments may represent one serve homogeneous luminous surface. Alternatively, the segments may be at least partially independent of one another

be controlled or designed differently. For example, an inhomogeneous luminous area can thereby be displayed, for example images, symbols, numbers or letters can be displayed.

The segments are so small in this embodiment and arranged so close to each other in the lateral direction that they are not recognizable in the sectional view shown in Figure 15 as independent segments and therefore are not shown. In the following, a method for producing an organic optoelectronic component 101 which, for example, is shown in FIG. 15, is explained with reference to FIGS. 16 to 28

Optoelectronic device 101 may correspond. In this case, the organic optoelectronic component 101 is in the individual states of the organic optoelectronic

Device 101 during the process for producing the organic optoelectronic component 101 in such a way

shown enlarged, that at least one of the segments completely and two of the adjacent segments

partially and the separation areas between them are recognizable and are shown accordingly.

Fig. 16 shows a side sectional view of a

Embodiment of an organic optoelectronic device 101, for example, the above

explained organic optoelectronic device 101, in a first state during a method for

Producing the organic optoelectronic component 101. In the first state, the carrier 121 is provided. Fig. 17 shows a side sectional view of the

organic optoelectronic component 101 according to FIG. 16 in a second state during the method for

Producing the organic optoelectronic component 101. In the second state, the first electrode layer 14 is formed on the carrier 121. The first

Electrode layer 14 may, for example, in a

Separation method, a vapor deposition or by means of a printing process on the support 121 are formed.

Alternatively, the carrier 121 may be omitted and the first electrode layer 14 may be so stable

be designed or trained that they as

Carrier element for the organic optoelectronic component 101 is used. Optionally, the first electrode layer 14 may be formed as a metal foil or as a metal sheet.

Fig. 18 shows a side sectional view of

of organic optoelectronic component 101 according to FIG. 17 in a third state during the method for

Producing the organic optoelectronic component 101. In the third state is a first

Planarisierungsschicht 40 formed on the first electrode layer 14. The first planarization layer 40 may

For example, be formed over the entire surface of the first electrode layer 14. The first planarization layer 40 preferably comprises an electrically insulating material. For example, the first planarization layer 40 comprises a resist, a resin, for example a synthetic resin,

and / or a paint on.

Fig. 19 shows a side sectional view of the

organic optoelectronic component 101 according to FIG. 18 in a fourth state during the process for producing the organic optoelectronic component 101. In the fourth state, a first barrier layer 42 is formed on the first planarization layer 40. The first barrier layer 42 may, for example, be formed all over the surface on the first planarization layer 40. The first barrier layer 42 preferably comprises an electrically insulating material. For example, the first barrier layer 42 comprises a resist, a resin, for example a synthetic resin, and / or a lacquer.

The first planarization layer 40 and the first

Barrier layer 42 form a protective layer structure of the organic optoelectronic component 101. Alternatively, the protective layer structure may be only the first one

Planarization layer 40 or the first barrier layer 42, in which case can be dispensed with the first barrier layer 42 and the first planarization layer 40. From the protective layer structure are subsequently electrically insulating separation areas between the segments of the

formed of organic optoelectronic device.

Fig. 20 shows a side sectional view of the

organic optoelectronic component 101 according to FIG. 19 in a fifth state during the method for

Producing the organic optoelectronic component 101. In the fifth state is unintentionally a first

Dirt particles 44 reaches the first barrier layer 42. In a subsequent to the fifth state

Cleaning step, the first contaminant 44 is removed. Immediately afterwards, the substrate with the

Protective layer structure is preferably introduced into a process chamber in which a negative pressure relative to the environment of Process chamber prevails. Alternatively, the substrate having the protective layer structure may be first introduced into the process chamber and cleaned in the process chamber. There may be a vacuum in the process chamber. Of the

The negative pressure in the process chamber can be 10 ^"4 mbar or less

Range are for example from 10 ^{~ 10} to 500 mbar,

for example, from 10 ^{~ 4} mbar to 1 mbar.

Fig. 21 shows a side sectional view of the

organic optoelectronic component 101 according to FIG. 20 in a sixth state during the method for

Producing the Organic Optoelectronic Device 101. In the sixth state, a shadow mask 461 is arranged on the protective layer structure, in particular on the first barrier layer 42. The shadow mask 461 was placed in the process chamber on the protective layer structure

arranged. The shadow mask 461 has a plurality of recesses 48, which in the lateral direction of webs of the

Shadow mask 461 are limited. The shadow mask 461 may be formed, for example, net-like. The webs may for example be designed and arranged so that the recesses 48 are formed in plan view, for example, quadrangular or hexagonal.

The lands may have a width in a range from 1 ym to 100 ym, for example from 5 ym to 50 ym, for example from 10 ym to 20 ym. The entirety of the webs forms the shadow mask 461. The shadow mask 461 can only have equal width webs or the shadow mask 461 can have webs of different widths. For example, the shadow mask 461 may be located in an area where subsequently the Protective layer structure is removed and / or the organic functional layer structure is formed, have very thin webs, for example, with a width in the aforementioned areas, and the shadow mask 461 outside these areas, for example, at an edge of the shadow mask 461 have significantly broader webs,

For example, for the mechanical stabilization of

Shadow mask 461, for example, with a width of 0.1 mm to 10 mm.

Fig. 22 shows a side sectional view of the

organic optoelectronic component 101 according to FIG. 21 in a seventh state during the method for

Producing the Organic Optoelectronic Device 101. In the seventh state, the protective layer structure, in particular the first planarization layer 40 and the first barrier layer 42 in the recesses 48 is removed. For example, the protective layer structure was removed in a chemical or physical etching process, with the shadow mask 461 lying vertically beneath

Portions of the protective layer structure, in particular the first planarization layer 40 and the first

Barrier layer 42 has been protected so they have not been removed. The first electrode layer 14 served in the

Etching process as etch stop layer. After arranging the

Shadow mask 461 and during the etching process, the substrate with the protective layer structure and the

Shadow mask 461 preferably not removed from the process chamber. Alternatively, after arranging the

Shadow mask 461 and / or during the etching process, the substrate with the protective layer structure and the

Shadow mask 461 removed from the process chamber and / or be placed again in the process chamber or other process chamber.

Fig. 23 shows a side sectional view of

22 in an eighth state during the process for producing the organic optoelectronic component 101. In the eighth state, organic material is formed in the recesses 48 above the first electrode layer 14 and over the webs of the shadow mask 461. The organic material 50 in the recesses 48 forms the organic functional layer structure 22 of the organic optoelectronic

Device 101. After the etching process and during the

Application of the organic material 50, the substrate with the protective layer structure and the shadow mask 461 was not removed from the process chamber. In addition, between the performing of the etching process and the application of the organic material 50, the shadow mask 461 did not become

removed so that the shadow mask 461 on the one hand as

Etch stop layer during the etching process and on the other hand, as a structural mask in forming the organic

functional layer structure 22 serves to be removed or moved between these steps. Fig. 24 shows a side sectional view of the

of organic optoelectronic component 101 according to FIG. 23 in a ninth state during the method for

Producing the Organic Optoelectronic Device 101. In the ninth state, the shadow mask 461 with the organic material 50 deposited thereon is of the

Protective layer structure removed. Optionally, the substrate with the organic material 50 and the

Protective layer structure now removed from the process chamber become. Alternatively, the subsequent steps may additionally be performed in the process chamber,

for example, without the substrate with the corresponding layers previously removed from the process chamber.

25 is a side sectional view of the organic optoelectronic component 101 according to FIG. 24 in a tenth state during the method for producing the organic optoelectronic component 101. In the tenth state, a second electrode layer 52 is over the organic material 50 and the protective layer structure, in particular the first one Planarisierungsschicht 40 and the first barrier layer 42, formed. From the second

Electrode layer 52, the second electrode 23 may be formed. In addition, the first electrode 201 may be formed by the first electrode layer 14.

The protective layer structure forms separation regions between the segments of the organic optoelectronic device 101 such that the organic material 50 of one segment is spatially and electrically isolated in the lateral direction from the organic material 50 of another segment. In the embodiment shown, the individual segments are over the first electrode layer 14 and the second

Electrode layer 52 is electrically connected together. This makes it possible to control all segments of the organic optoelectronic component 101 the same and / or together.

Alternatively, the individual segments may be electrically separated from each other. For example, the first electrode layer 14 and / or the second electrode layer 52 may be subdivided into individual separate segments. This allows for individual segments or groups of segments independently of other segments or groups of segments.

Fig. 26 shows a side sectional view of the

25 in an eleventh state during the method for producing the organic optoelectronic component 101. In the eleventh state, a second barrier layer 54 is formed over the second electrode layer 52. The second

Barrier layer 54 may be, for example, the same

Material may be formed as the first barrier layer 42, wherein the second barrier layer 54 is the same or

different as the first barrier layer 42 may be formed. For example, the second barrier layer 54 may be made in the same way as the first one

Barrier layer 42, wherein the second barrier layer 54 may be formed the same or different as the first barrier layer 42. Fig. 27 shows a side sectional view of the

organic optoelectronic component 101 according to FIG. 26 in a twelfth state during the method for

Producing the organic optoelectronic component 101. In the twelfth state is a second

Planarisierungsschicht 56 formed over the second barrier layer 54. For example, the second planarization layer 56 may be of the same material as the first

Planarisierungsschicht 40 may be formed, wherein the second planarization layer 56 may be the same or different as the first planarization layer 40 may be formed. For example, the second planarization layer 56 may be made in the same way as the first one

Planarisierungsschicht 40, wherein the second Planarisierungsschicht 56 may be the same or different as the first planarization layer 40 may be formed.

FIG. 28 is a side sectional view of FIG

of organic optoelectronic component 101 according to FIG. 27 in a thirteenth state during the method for

Producing the organic optoelectronic component 101. In the thirteenth state is a third

Barrier layer 58 formed over the second planarization layer 56. The third barrier layer 58 can

for example, the same material as the first

Barrier layer 42 may be formed, wherein the third

Barrier layer 58 may be the same or different as the first barrier layer 42 may be formed. The third

Barrier layer 58 can be produced, for example, in the same way as first barrier layer 42, wherein third barrier layer 58 can be formed the same or differently as first barrier layer 42. The second barrier layer 54, the second

Planarization layer 56 and / or the third barrier layer 58 form an encapsulation, in particular the

Encapsulation Layer Structure 24. FIG. 29 is a side sectional view of FIG

28 shows an organic optoelectronic component 101 according to FIG. 28 with a second dirt particle 60 which is in the process of forming the organic functional layer structure 22, the second electrode 23 and / or the encapsulation in the

Layer structure of the organic light-emitting

optoelectronic device 101 is advised. Along the surface of the second dirt particle 60 can

Impurities, such as air and / or Moisture through the encapsulation to the organic functional layer structure 22 penetrate. However, due to the separation regions formed by the remnants of the first planarization layer 40 and the first barrier layer 42, the contaminants remain in the segment in which the second debris 60 is disposed.

The encapsulant may have a first thick Dl in a range of, for example, 0.1 ym to 10 ym, for example, from 1 ym to 5 ym, for example, of approximately 2 ym. The second electrode layer 52 and the second barrier layer 54 may together have a second thickness D2 in a range of, for example, 100 nm to 500 nm, for example, 150 nm to 300 nm, for example, about 200 nm. The separation areas may have a width Bl in a range of for example 1 ym to 50 ym, for example from 3 ym to 20 ym, for example from 5 ym to 10 ym. The width Bl of the separation regions is compared with the second thickness D2 of the second electrode layer 52 and the second one

Barrier layer 54 is relatively large, whereby a relatively long diffusion path for the impurities is provided by the segment with the second dirt particle 60 to a neighboring segment. Due to the long diffusion path it is very unlikely that the impurities in the

Penetrate neighboring segment. If it does, it takes at least a very long time for the impurities to penetrate into the neighboring segment.

Fig. 30 shows a side sectional view of a

conventional organic optoelectronic component with the second dirt particle 60. Also in the conventional organic optoelectronic device can

Impurities along the surface of the second Dirt particles 60 to the organic functional

Layer structure 22 penetrate. However, since this conventional organic optoelectronic device no

Separation areas, the impurities,

especially along the boundary layers between the

Layers, relatively quickly and relatively unhindered penetrate, creating relatively large portions of the

conventional organic optoelectronic device can be damaged.

FIG. 31 shows a schematic sequence of a

Embodiment of a masking process. In FIG. 31 essential steps of the method explained with reference to FIGS. 16 to 28 are emphasized among one another in order to explain significant advantages of this method.

In particular, FIG. 31 shows the method steps illustrated with reference to FIGS. 21, 22 and 23, which show that the shadow mask 461 is used as an etch stop for structuring the protective layer structure, in particular the first planarization layer 40 and the second barrier layer 42 and subsequently, without being removed in between, as

Structure mask is used to form the organic functional layer structure 22. On the one hand, this causes the structure of the organic functional

Layer structure 22 is very good to the structure of

Protective layer structure fits, and on the other hand, that the substrate with the protective layer structure during this

Operations must not be removed from the process chamber and so no or at least very little dirt on the

Substrate and / or the corresponding layers can get. FIG. 32 shows a schematic sequence of a conventional masking process, in particular in comparison to the corresponding steps of FIG

Embodiment of the masking process. In the conventional masking process, after patterning the protective layer structure, the substrate with the

structured protective layer structure removed from the process chamber and the first shadow mask 461 is removed. The substrate having the patterned protective layer structure and without the first shadow mask 461 is cleaned. Then, a second shadow mask 62 is placed on the substrate,

preferably such that the webs of the second shadow mask 62 come to rest directly on the protective layer structure, which, however, is never quite precisely possible. Alternatively, the first shadow mask 461 is again placed on the substrate, preferably so that the ridges of the first shadow mask 461 come to rest directly on the protective layer structure, which, however, is never quite precisely possible. In particular, it may happen that, as for example in the case shown in FIG. 32, the webs of the second shadow mask 62 come to rest laterally next to the structures of the protective layer structure. Subsequently, since the organic material 50 is formed on the second shadow mask 62, and then the second shadow mask 62 is removed, there is formed

Recess in an area where actually the organic

Material 50 should be formed. This can subsequently lead to further errors, in particular when forming the subsequent layers. In addition, this may cause the affected segment, adjacent segments and / or even the entire conventional organic

optoelectronic device are not functional. In Fig. 32, there is shown a case in which the second

Shadow mask 62 lateral to the structures of the

Protective layer structure is arranged, which can lead to the problems explained in the foregoing. However, other, similar and / or further problems may also occur even if the second shadow mask 62 is still arranged on the structures of the protective layer structure, but is slightly laterally offset therefrom. 33 shows a detailed side sectional view of the embodiment of the organic optoelectronic component 101 in the ninth state during the method for producing the organic optoelectronic component 101. FIG. 33 shows that a thickness of the

Protective layer structure, in particular a common thickness of the first planarization layer 40 and the first

Barrier layer 42, less than a thickness of

organic material 50 and / or the organic

functional layer structure 22. The steps of

A method for producing the organic optoelectronic component 101, which led to the ninth state and the subsequent steps until the completion of the

Organic optoelectronic device 101 may correspond to the steps explained above with reference to Figures 16 to 28, or at least to these

correspond.

34 shows a detailed side sectional view of an alternative embodiment of the organic optoelectronic device 101 in the ninth state during the process for producing the organic

Optoelectronic component 101. From Figure 34 shows that the thickness of the protective layer structure, in particular the common thickness of the first planarization layer 40 and the first barrier layer 42, is the same as the thickness of the organic material 50 and / or the organic

functional layer structure 22. The steps of

correspond.

35 shows a detailed side sectional view of an alternative embodiment of the organic optoelectronic device 101 in the ninth state during the process for producing the organic

Optoelectronic component 101. From Figure 35 shows that the thickness of the protective layer structure, in particular the common thickness of the first planarization layer 40 and the first barrier layer 42, is greater than the thickness of the organic material 50 and / or organic

functional layer structure 22. The steps of

correspond.

FIG. 36 shows a detailed side sectional view of an alternative embodiment of the organic optoelectronic device 101 in the ninth state during the process for producing the organic

Optoelectronic component 101. It can be seen from FIG. 36 that the thickness of the protective layer structure, which in this case is formed exclusively by the first planarization layer 40 or the first barrier layer 42, is smaller than the thickness of the organic material 50 and / or the organic functional layer structure 22. The steps of the process for producing the organic

Optoelectronic device 101, which to the ninth

State and the subsequent steps until the completion of the organic optoelectronic component 101 may correspond to or at least correspond to the steps explained above with reference to FIGS. 16 to 28.

37 shows a detailed side sectional view of an alternative embodiment of the organic optoelectronic device 101 in the ninth state during the process for producing the organic

optoelectronic component 101. It can be seen from FIG. 37 that the thickness of the protective layer structure, which in this case is formed exclusively by the first planarization layer 40 or the first barrier layer 42, is the same as the thickness of the organic material 50 and / or the organic functional one Layer structure 22. The steps of the process for producing the organic

Optoelectronic device 101, which to the ninth

State and the subsequent steps until the completion of the organic optoelectronic component 101 may correspond to or at least correspond to the steps explained above with reference to FIGS. 16 to 28. 38 shows a detailed side sectional view of an alternative embodiment of the organic optoelectronic device 101 in the ninth state during the process for producing the organic

Optoelectronic component 101. It can be seen from FIG. 38 that the thickness of the protective layer structure, which in this case is formed exclusively by the first planarization layer 40 or the first barrier layer 42, is greater than the thickness of the organic material 50 and / or the organic functional layer structure 22. The steps of the process for producing the organic

Optoelectronic device 101, which to the ninth

Fig. 39 shows a side sectional view of the

Embodiment of the organic optoelectronic

Device 101 in the ninth state during the process for producing the organic optoelectronic device 101. The organic optoelectronic device 101 has relatively wide separation areas, for example, with the previously discussed width Bl. The steps of

correspond. The embodiment shown in FIG. 39, in which an exemplary width of the separation regions is illustrated, may be as shown in FIGS. 33 to 38

Embodiments in which the thickness of the

Protective layer structure is illustrated, combined. In particular, those of the

Protective layer structure formed separating regions having the width shown in Figure 39 have the thicknesses or layer sequences shown in Figures 33 to 38.

40 shows a detailed side sectional view of an alternative embodiment of the organic optoelectronic device 101 in the ninth state during the process for producing the organic

optoelectronic component 101. The organic

Optoelectronic component 101 has a relatively wide separation area, for example with the width Bl explained above, and a relatively thin separation area. In other words, the separation areas

have different widths, which, for example, by means of different width webs of the first

Shadow mask 461 can be realized. The steps of the method for producing the organic optoelectronic component 101 which have led to the ninth state and the subsequent steps until the completion of the organic optoelectronic component 101 may correspond to the steps explained above with reference to FIGS. 16 to 28 or at least to these

correspond.

The embodiment shown in Figure 40, in which

Example, different widths of the separation areas are illustrated, with the in Figs. 33 to 38 shown embodiments, in which the thickness of the protective layer structure is illustrated, are combined. In particular, those of the

Protective layer structure formed separating regions having the widths shown in Figure 40 have the thicknesses or layer sequences shown in Figures 33 to 38.

41 shows a detailed side sectional view of an alternative embodiment of the organic optoelectronic device 101 in the ninth state during the process for producing the organic

optoelectronic component 101. The organic

optoelectronic component 101 has a relatively thin

Separation areas, for example, thinner than in the

Previous explained width Bl. The steps of

The method for producing the organic optoelectronic component 101, which led to the ninth state, and the subsequent steps until the completion of the organic optoelectronic component 101 may correspond to the steps explained above with reference to FIGS. 16 to 28 or at least to these

correspond.

The embodiment shown in Figure 41, in which an exemplary relatively thin width of the separation areas

can be combined with the embodiments shown in Figures 33 to 38, in which the thickness of the protective layer structure is illustrated. In particular, those of the

Protective layer structure formed separating regions having the width shown in Figure 41 have the thicknesses or layer sequences shown in Figures 33 to 38. 42 shows a detailed side sectional view of an alternative embodiment of the organic optoelectronic component 101 in the tenth state during the method for producing the organic optoelectronic component 101. The second

Electrode layer 52 is structured such that the

Protective layer structure remains free of the material of the second electrode layer 52. For example, the first shadow mask 461 may remain arranged over the protective layer structure until the second electrode layer 52 is formed. Optionally, between forming the organic functional layer structure 22 and the second electrode layer 52, the substrate with the

corresponding layers not from the process chamber

be removed. Alternatively, the second

Electrode layer 52 are formed with a further shadow mask and / or the substrate with the

corresponding layers may be removed from the process chamber prior to forming the second electrode layer 52.

43 shows a detailed side sectional view of an alternative embodiment of the organic optoelectronic component 101 in the tenth state during the method for producing the organic optoelectronic component 101. The thickness of the

Protective layer structure corresponds to the thickness of the organic functional layer structure 22 and the second

Electrode layer 52 is over the entire surface, in particular as a completely closed area, over the organic functional layer structure 22 and the

Protective layer structure formed. The invention is not limited to those specified

Embodiments limited. For example, the embodiments explained above can be combined with one another. In addition, the above-explained organic optoelectronic component 101 basically has a plurality of the illustrated segments and

Separating areas. For example, the entire

Illuminated area of a corresponding OLED a variety

have such segments and separation areas.

The invention described here is not by the

Description limited to the embodiments.

Rather, the invention encompasses any novel feature as well as any combination of features, including in particular any combination of features in the claims, even if this feature or combination itself is not explicitly stated in the patent claims or exemplary embodiments. This patent application claims the priorities of German Patent Applications 10 2016 100 917.2 and

10 2016 100 148.1, the disclosure of which is hereby incorporated by reference.

Reference sign list

1 organic light emitting diode

1 'modification of an organic light emitting diode

2 carrier substrate

20 main side of the carrier substrate

3 first power supply

3a translucent electrically conductive layer

3b metallic contact structure

4 electrical insulation layer

46 opening in the insulation layer

5 organic stacks of layers

6 second power supply

6a power supply line

6b through-hole

6c surface part

6d translucent electrically conductive layer

7 encapsulation

8 mask layer

9 more mask layers

10 organic insulation material

11 protective layer

12 dirt particles organic optoelectronic component 101 carrier 121 first electrode layer 14 first contact section 16 second contact section 18 first electrode 201 insulator 21 organic functional layer structure 22 second electrode 23 Encapsulation 24

Adhesive layer 36

Cover body 38

Planarisierungsschicht 40 first barrier layer 42 first dirt particles 44 first shadow mask 461st

Recess 48 Organic material 50 Second electrode layer 52 Second barrier layer 54 Second planarization layer 56 Third barrier layer 58 Second dirt particle 60 Second shadow mask 62

Claims

Patent claims

1. Process for producing an organic light-emitting diode (1) with the following steps in the order given:

- Providing a carrier substrate (2) with a main page (20),

- Coat the main side (20) with a

electrical insulation layer (4),

- Applying a mask layer (8) to the

insulation layer (4),

- removing the insulation layer (4) in places, dictated by the mask layer (8),

- Applying an organic layer stack (5) to generate light, so that the mask layer (8) is between the layer stack (5) and the remaining insulation layer (4) and so that the

Insulation layer (4) and the layer stack (5) in the direction parallel to the main side (20).

follow each other,

- Remove the mask layer (8) together with

unnecessary material of the layer stack (5), and

- positive application of an encapsulation (7).

2. Method according to the preceding claim,

where the inorganic insulation layer (4) and the

Layer stacks (5) have the same thickness, with a tolerance of a maximum of 25% of an average thickness of the layer stack (5) in the finished organic light-emitting diode (1), lie in the same plane and do not overlap each other. Method according to one of the preceding claims, in which a first power supply (3) for

Layer stack (5) is generated,

wherein the first power supply (3) has a transparent electrically conductive layer (3a) directly on the

Main side (20) and a metallic contact structure (3b) directly on the conductive layer (3a), the contact structure (3b), seen in plan view, being located completely next to the layer stack (5) and in the direction parallel to the main side (20) the insulation layer (4) is between the

Contact structure (3b) and the layer stack (5) is located.

Method according to the preceding claim,

where the first power supply

(3) is produced and completed before the mask layer (8) is applied, the mask layer (8) partially covering the conductive layer (3a) after application and the

Contact structure (3b) completely covered.

Method according to one of the preceding claims, in which a second power supply (6) for

Layer stack (5) is generated,

wherein the second power supply (6) is a metallic power supply line (6a) near the main side (20), a plated-through hole (6b) through the insulation layer

(4) through away from the main page (20) and one

Surface part (6c) comprises,

where the layer stack

(5) completely between the surface part (6c) and the carrier substrate (2)

located.

6. Method according to the preceding claim,

wherein the encapsulation (7) is applied directly and over the entire surface to the surface part (6c) and is in

Areas next to the surface part (6c) are located directly on the insulation layer (4).

7. Method according to one of claims 5 or 6,

wherein the surface part (6c) and the plated-through hole (6b) are applied together in a structured manner in the same process step using a further mask layer (9).

8. Method according to one of claims 5 to 7,

in which before applying the mask layer (8) in the insulation layer (4) by means of laser ablation

Opening (46) for the plated-through hole (6b) is created.

9. The method according to claim 4 and according to one of claims 5 to 8,

wherein the surface part (6c) projects beyond the layer stack (5) in the direction parallel to the main side (20) and partially covers the contact structure (3b).

10. Method according to one of the preceding claims,

in which the insulation layer (4) and the encapsulation (7) are made of the same material and are translucent,

wherein the insulation layer (4) is thicker than that

Encapsulation (7) is.

11. Method according to one of the preceding claims,

in which the insulation layer (4) is removed dry chemically, in the same reaction chamber is carried out like applying the

Layer stack (5) and at the same time for cleaning the surface to which the layer stack (5) is applied.

12. Method according to one of the preceding claims,

wherein an area between the encapsulation (7) and the main side (20), with the exception of the layer stack (5), is made free of organic materials and the encapsulation (7), with a tolerance of at most 50% of an average thickness of the encapsulation ( 7), is applied continuously and the average thickness of the encapsulation (7) is at least 20 nm and at most 1 ym.

13. Method according to one of the preceding claims,

in which the insulation layer (4) is thinner than that

Layer stack (5) is and means

Atomic layer deposition, molecular layer deposition and / or chemical vapor deposition is produced,

where there is between the main page (20) and the

Encapsulation (7) no cavities with a middle

diameter of more than 0.05 ym.

14. Organic light-emitting diode (1) with

- a carrier substrate (2) with a main side (20),

- an inorganic electrical insulation layer (4),

- an organic layer stack (5).

light production, and

- an encapsulation (7) on a side of the insulation layer (4) and the layer stack (5) facing away from the main side (20),

wherein the insulation layer (4) and the layer stack (5)

- lie in the same plane,

- have the same thickness, with a tolerance of a maximum of 25% of an average thickness of the

Layer stack (5),

- do not overlap each other, and

- follow each other directly in the direction parallel to the main page (20).