DE102016214739A1 - Optoelectronic device - Google Patents

Abstract

The invention relates to an optoelectronic device for generating electromagnetic radiation. In an optoelectronic device (10) having a substrate (11), a first electrode (14), a second electrode (15) and a between the electrodes (14, 15) arranged functional layer structure (16) which is set up when energized by means of the two electrodes (14, 15) to generate an electromagnetic radiation, an insulating layer (13), the at least one of the electrodes (14, 15) relative to the substrate (11) electrically insulated, a planarization (12) for compensating a roughness of a the first electrode (14) and the second electrode (15) facing the main surface (11a) of the substrate (11), the electrode, which is electrically insulated from the substrate (11) by the insulating layer (13), a contact (24, 25) for contacting and the insulating layer (13) is arranged and arranged to act as a moisture diffusion barrier for moisture diffusion from the contact (24, 25) to the planarization (12).

Description

The invention relates to an optoelectronic device for generating electromagnetic radiation.

It is known in optoelectronic devices for generating electromagnetic radiation between the substrate and an electrode to arrange an insulating layer which insulates the electrode from the substrate. The insulating layer may also have a planarizing effect. Known insulating layers with high planarization effect consist of organic materials. Such materials have a high moisture transport capability, whereby the robustness of the optoelectronic device can be reduced, which is particularly unfavorable in automotive applications.

The object of the invention is to propose an optoelectronic device for generating electromagnetic radiation with a simple and at the same time robust construction.

This object is solved by the features of claim 1. In dependent claims advantageous embodiments are given.

In accordance with at least one embodiment, an optoelectronic device for generating electromagnetic radiation comprises a preferably planar substrate, a functional layer structure, a first electrode arranged on a side of the functional layer structure facing the substrate, and a second electrode arranged on a side of the functional layer structure remote from the substrate; wherein the functional layer structure is adapted to generate the electromagnetic radiation when the functional layer structure is energized by means of the first electrode and the second electrode.

The optoelectronic device further comprises an insulating layer which supports at least one of the two electrodes, i. the first electrode or the second electrode or both the first electrode and the second electrode, electrically insulated from the substrate.

In addition, the optoelectronic device comprises a planarization for compensating a roughness of a main surface of the substrate facing the electrodes.

The at least one electrode, which is electrically insulated from the substrate by the insulating layer, has a contact for contacting. This is preferably for external contacting, i. for contacting from outside the optoelectronic device. The contact may be formed by a suitable area for contacting one of the two electrodes.

The insulating layer is configured and arranged to act as a moisture diffusion barrier for moisture diffusion from the contact to the planarization.

Thus, by virtue of this insulating layer, which prevents moisture from passing from the contact to the planarization, the use of planarization in which moisture readily propagates is made possible, while maintaining a robust construction.

By the combination of planarization and insulation layer described above, therefore, a very good planarization effect and at the same time a very good protection against the ingress of moisture can be achieved.

The planarization is preferably arranged between the substrate and the functional layer structure. As a result, a simple structure of the optoelectronic device can be made possible.

In particular, the planarization can be a planarization layer.

The first electrode may comprise or consist of a first electrode layer. The second electrode may comprise or consist of a second electrode layer.

The planarization is preferably arranged such that at least a portion of the functional layer structure is planarized by the planarization. This means that the functional layer structure in this area has a lower roughness than would be the case in the absence of planarization.

The first electrode, the second electrode, the functional layer structure, the insulating layer, the planarization and the contact may be at least partially, e.g. at least in regions, be arranged on the main surface of the substrate. For example, they can at least partially be in direct or indirect contact with this surface. In particular, they can be coated on this surface according to a layer sequence.

The fact that a layer or an element is arranged or applied "on top" - equivalent to "above" - another layer or another element may, here and below, mean that the one layer or the element directly in direct mechanical and / or electrical contact is disposed on the other layer or the other element. Furthermore, it can also mean that the one layer or the one element is arranged indirectly on or above the other layer or the other element. In this case, further layers and / or elements can then be arranged between the one and the other layer or between the one and the other element.

The fact that a layer or an element is arranged "between" two other layers or elements may here and in the following mean that the one layer or the element directly in direct mechanical or electrical contact or in indirect contact with one of the two other layers Elements and in direct mechanical and / or electrical contact or indirect contact with the other of the other two layers or elements is arranged. In the case of indirect contact, further layers and / or elements can then be arranged between the one and at least one of the two other layers or between the one and at least one of the two other elements.

The planarization is preferably arranged such that at least a portion of the contact is not planarized by the planarization. That is, according to this preferred embodiment, at least a portion of the contact has the same roughness as would be the case in the absence of planarization. This facilitates the moisture diffusion barrier effect of the insulating layer. Most preferably, the entire contact is not planarized by the planarization.

Preferably, when viewed in plan view of the main surface of the substrate, the planarization does not extend in a region of the contact, or better over the entire contact. In other words, the contact and the planarization preferably do not completely or better not overlap in a plan view of the main surface of the substrate. This preferred embodiment enables a simple construction of the optoelectronic device with good moisture diffusion barrier effect of the insulating layer.

Preferably, as seen in plan view of the main surface of the substrate, the insulating layer extends in a region of the contact, and more preferably over the entire contact. In other words, the insulating layer and the contact preferably overlap one another in a plan view of the main surface of the substrate, and more preferably they completely overlap. This allows a simple construction of the optoelectronic device with good moisture diffusion barrier effect of the insulating layer.

Preferably, the insulating layer is arranged and arranged to act as a moisture diffusion barrier in the lateral direction of the insulating layer. This allows a simple construction of the optoelectronic device with good moisture diffusion barrier effect of the insulating layer.

According to one embodiment, the insulating layer is arranged and arranged not to act as a moisture diffusion barrier in a direction perpendicular to the lateral direction of the insulating layer. This allows a simple construction of the optoelectronic device. For example, the insulating layer can be produced in a particularly simple and cost-effective manner. For example, the insulating layer may have holes, called pinholes, which do not significantly affect the electrical isolation effect, but allow moisture diffusion in a direction perpendicular to the lateral direction of the insulating layer.

By a lateral direction of the insulating layer is meant, for example, a direction extending in an interface of a flat insulating layer neglecting the surface roughness, or e.g. a tangent to an interface of a curved insulating layer neglecting a surface roughness. Accordingly, under a plan view of the main surface of the substrate, e.g. understood a vertical projection on the major surface of a planar substrate or e.g. a projection on the major surface of a curved sheet substrate, which is locally at each point - neglecting the surface roughness - perpendicular to the main surface.

Preferably, an interface of the first electrode remote from the substrate or an interface of the second electrode facing the substrate has a reflectivity of at least 50%, preferably at least 80% or even at least 90% for one on this interface in a region planarized by the planarization meeting electromagnetic radiation. The reflectivities are in each case related to the radiation power. Particularly preferably, the interface in the above described range reflectivity for one or more wavelengths of the visible light spectrum from 380 nm to 780 nm on or in the arithmetic mean over the wavelength range of visible light or in the arithmetic mean of the spectrum of visible light. Likewise particularly preferably, the boundary surface in the area described above has the above-described reflectivity for one or more wavelengths of the electromagnetic radiation that can be generated by the functional layer structure or with respect to the radiation power for the electromagnetic radiation that can be generated by the functional layer structure. Thereby, a specular electromagnetic device can be realized. The reflectivity of the aforementioned boundary surface may relate in particular to a radiation incidence perpendicular to the boundary surface. The reflectivity of the aforementioned interface of the electrode depends inter alia on the refractive index of the electrode and on the refractive index of the adjacent layer or layers. The fact that the aforementioned area of the first electrode interface is planarized by the planarization means that it has less roughness than would be the case in the absence of planarization.

Preferably, the optoelectronic device is set up to emit at least part of the generated electromagnetic radiation through the second electrode. It may also be set up to not emit the generated electromagnetic radiation through the substrate.

Preferably, the optoelectronic device is set up to emit at least part of the generated electromagnetic radiation through the first electrode and the substrate. It may also be set up to emit the generated electromagnetic radiation through the second electrode.

Preferably, the optoelectronic device further comprises an encapsulating layer for protecting the functional layer structure from moisture, which has a recess forming the contact for contacting, e.g. for external contacting, accessible.

The encapsulation layer may be formed as a single layer, a layer stack or a layer structure. The encapsulation layer may in particular be a thin-layer encapsulation (also referred to as TFE, thin-film encapsulation).

Preferably, the encapsulation layer is at least partially disposed on a side of the second electrode which is angled away from the substrate. As a result, a good encapsulation effect of the encapsulation layer can be achieved.

The insulating layer and the encapsulating layer are preferably disposed on opposite sides of the at least one electrode that is insulated from the insulating layer from the substrate. As a result, a good encapsulation effect of the encapsulation layer can be achieved.

Preferably, as seen in plan view of the main surface of the substrate, the planarization and the recess overlap only partially or better not at all. In other words, preferably in plan view of the main surface of the substrate seen in a region of the recess does not extend the planarization and particularly preferably does not extend seen in plan view of the main surface of the substrate over the entire recess away the planarization. This allows a simple construction of the optoelectronic device with good moisture diffusion barrier effect of the insulating layer.

Also preferably, as seen in plan view of the main surface of the substrate, the insulating layer and the recess overlap, more preferably, they completely overlap. In other words, as seen in plan view of the main surface of the substrate, the insulating layer preferably extends over a portion of the recess. Particularly preferably, it extends over the entire recess in a plan view of the main surface of the substrate. This allows a simple construction of the optoelectronic device with good moisture diffusion barrier effect of the insulating layer.

The insulating layer preferably has a layer thickness of at least 1 μm. Also, it may have a thickness that is at least equal to twice a roughness of the substrate, preferably at least equal to twice a maximum roughness of the substrate. As a result, sufficient stability, e.g. can be achieved against puncturing the insulation layer.

Preferably, starting from the substrate, the insulating layer is arranged downstream of the planarization. Thereby, diffusion of constituents of the planarization into the functional layer structure can be prevented, i. the insulating layer can act as a diffusion barrier between planarization and functional layer structure. This may be desirable, in particular, when the planarization comprises an organic material or consists of an organic material and at the same time the functional layer structure comprises or consists of an organic material, i. the functional layer structure is an organically functional layered structure.

More preferably, the insulating layer and the substrate cooperatively completely surround the planarization. Thus, the Planarization through the insulating layer in cooperation with the substrate to be encapsulated from all sides by moisture.

According to an alternative embodiment, starting from the substrate, the planarization of the insulation layer is arranged downstream. In this case, the insulating layer can extend over the entire substrate. These alternative embodiments facilitate the manufacture of the optoelectronic device, for example, while the insulating layer can be applied by means of a roll to roll method before the planarization is applied and finely structured.

Preferably, the electrode electrically insulated from the substrate by the insulating layer is in direct contact with the insulating layer. As a result, a mechanically particularly stable connection with the electrode can be produced, in particular when an insulating layer of inorganic material is used.

The planarization is planarized, i. it has less roughness on an interface facing away from the substrate than on an interface facing the substrate, preferably smaller by at least a factor of 2, more preferably by at least a factor of 5 and most preferably by at least a factor of 20. Preferably, the planarization has a surface facing away from the substrate, a roughness of less than or equal to 500 nm, more preferably less than or equal to 200 nm and most preferably less than or equal to 50 nm.

The substrate, on the other hand, may have a roughness greater than or equal to 500 nm on the major surface, or greater than or equal to 1000 nm, or even greater than or equal to 5000 nm.

The average roughness of a reference area, represented by the symbol R _a , indicates the mean distance of all points on the interface in the reference area to a center plane. The middle plane intersects the real profile so that the mean distance becomes minimal. The average roughness R _a thus corresponds to the arithmetic mean of the absolute deviation from the medial plane.

Preferably, the planarization comprises an organic material. As a result, a particularly good planarization effect can be achieved. For example, the organic material may be an organic material selected from the following group of materials: epoxy resin, acrylate, polyurethane, polyimide, silicone, organopolysilazane, polysiloxane, styrene, polyester, polyectone.

The planarization may be a liquid phase processed planarization, i. a liquid has been applied to provide the planarization, which forms the planarization.

Preferably, the insulating layer comprises an inorganic material. As a result, a particularly good moisture diffusion barrier effect can be achieved. For example, the insulating layer may comprise an inorganic material selected from the following group of materials: oxide, nitride, oxynitride, carbide, metal oxide, metal nitride, metal oxynitride, metal carbide, ceramic, glass. In particular, the inorganic material may be silicon nitride (SiN), silicon oxide (SiO _x ), silicon oxynitride (SiNO _x ), silicon oxycarbonitride (SiCNO _x ), aluminum oxide (AlO _x ), titanium oxide (TiO _x ), antimony tin Oxide (ATO) or silicon carbide (SiC) act.

The planarization is preferably configured and arranged in such a way that at least one of the first and second electrodes has an interface which has a lower roughness in at least one first area than in a second area.

Since the first region has a different roughness than the second region, these regions have a different appearance for a viewer, whereby the appearance of the optoelectronic device can be made more interesting and thereby improved.

The planarization can be designed and arranged, for example, such that an interface of the first electrode facing away from the substrate has a lower roughness in the first region than in the second region. In this case, the optoelectronic device is preferably set up to emit at least part of the generated electromagnetic radiation through the second electrode. In addition, it may be arranged to not emit the generated electromagnetic radiation through the substrate.

Alternatively or additionally, the planarization can also be configured and arranged such that an interface of the second electrode facing the substrate has a lower roughness in the first region than in the second region. In this case, the optoelectronic device is preferably set up to emit at least part of the generated electromagnetic radiation through the first electrode and the substrate. In addition, it may be arranged to not emit the generated electromagnetic radiation through the second electrode.

The planarization is preferably between the substrate and the first electrode arranged. As a result, a simple structure of the optoelectronic device can be made possible.

The first electrode may comprise or consist of a first electrode layer. Accordingly, for example, the first electrode layer may have a lower roughness in the first region on an interface facing away from the substrate than in the second region.

The second electrode may comprise or consist of a second electrode layer. Accordingly, for example, the second electrode layer may have a lower roughness in the first region on an interface facing the substrate than in the second region.

According to a preferred embodiment, the planarization is configured and arranged such that the previously discussed interface is planarized in the entire first region by the planarization and is not planarized by the planarization in the entire second region. That is, according to this preferred embodiment, the first electrode in the first region has less roughness than would be the case in the absence of planarization, and in the second region has the same roughness as would be the case in the absence of planarization.

The planarization may have at least one recess which causes the second region. This can be completely surrounded by the planarization.

Preferably, as seen in plan view, the main surface of the substrate, i. e.g. seen in perpendicular projection on the main surface of the substrate, in the entire first area, the planarization and in the entire second area not the planarization. In other words, preferably, when viewed in plan view of the main surface of the substrate, the first region and the planarization completely overlap and the second region and the planarization do not overlap completely.

According to a preferred embodiment, the planarization is configured and arranged such that the previously discussed interface is planarized in the first region by the planarization and is planarized in the second region by the planarization, in particular it can be configured and arranged such that the previously discussed Boundary surface in the entire first region is planarized by the planarization and planarized in the entire second region by the planarization. The different roughnesses in the first region and the second region can be achieved in that the planarization planarizes the regions differently, for example by varying a thickness of the planarization, in particular a layer thickness of a planarization layer forming the planarization. Accordingly, as seen in plan view of the main surface of the substrate, a planarization layer forming the planarization may have a different layer thickness in the entire first region than in the entire second region.

Preferably, the previously discussed interface of the at least one electrode in the first and / or the second region has a reflectivity of at least 50%, preferably at least 80% or even at least 90% for an electromagnetic radiation impinging on the interface of the first electrode. The reflectivities are in each case related to the radiation power. Particularly preferably, the interface in the first and / or the second region exhibits the above-described reflectivity for one or more wavelengths of the visible light spectrum from 380 nm to 780 nm, or in the arithmetic mean over the visible light wavelength range or in the arithmetic mean for the spectrum of visible light. Likewise particularly preferably, the boundary surface in the area described above has the above-described reflectivity for one or more wavelengths of the electromagnetic radiation that can be generated by the functional layer structure or based on the total radiation power for the electromagnetic radiation that can be generated by the functional layer structure. As a result, a highly reflective electromagnetic device can be realized, with the reflection characteristic differing in the first and second regions, particularly because the first region is less dull, i.e., less than the second region. less diffuse, reflected. The reflectivity of the aforementioned boundary surface may relate in particular to a radiation incidence perpendicular to the boundary surface. The reflectivity of the aforesaid interface of the first electrode depends inter alia on the refractive index of the first electrode and on the refractive index of the adjacent layer or layers.

Preferably, the optoelectronic device is set up to display visible information by interaction of the first area and the second area, ie information visible to an external observer. This can be visible, for example, both in an operating state and in an inoperative state. The information may be, for example, at least one pattern or a character, in particular a character.

Preferably, the optoelectronic device is set up to emit at least part of the generated electromagnetic radiation in an emission direction, wherein both the first region and the second region are visible in the direction opposite to the emission direction when the optoelectronic device is viewed.

This can ensure that these areas are easy to find for an external viewer. In this case, in an operating state of the optoelectronic device, they can be triggered by means of a lateral variation of a property of the emitted electromagnetic radiation, e.g. a brightness distribution and / or a color distribution, be visible.

By way of example, the optoelectronic device can be set up to emit the part of the generated electromagnetic radiation in the emission direction through an emission region of the second electrode. Likewise, the optoelectronic device can be set up to emit the part of the generated electromagnetic radiation in the emission direction through an emission region of the substrate.

Preferably, the insulating layer and the planarization are in direct contact with each other, allowing a simple construction of the optoelectronic device.

The functional layer structure may be an organically functional layer structure. Preferably, the optoelectronic device is an organic light emitting diode.

• S1: Bereitstellens des Substrats,
• S2: Bereitstellen der Isolierungsschicht
• S3: Bereitstellen der Planarisierung zum Ausgleichen einer Rauigkeit einer der ersten Elektrode und der zweiten Elektrode zugewandten Hauptfläche des Substrates,
• S4: Bereitstellen der funktionalen Schichtstruktur, der ersten Elektrode und der zweiten Elektrode, wobei die erste Elektrode auf einer dem Substrat zugewandten Seite der funktionalen Schichtstruktur angeordnet wird und die zweite Elektrode auf einer dem Substrat abgewandten Seite der funktionalen Schichtstruktur angeordnet wird, so dass die funktionale Schichtstruktur eingerichtet wird, bei Bestromung der funktionalen Schichtstruktur mittels der ersten Elektrode und der zweiten Elektrode die elektromagnetische Strahlung zu erzeugen,

wobei bei den Schritten S2 und S4 die Isolierungsschicht und zumindest eine der Elektroden derart bereitgestellt werden, dass die Isolierungsschicht diese Elektrode gegenüber dem Substrat elektrisch isoliert,
wobei bei dem Schritt S4 die zumindest eine Elektrode, die durch die Isolierungsschicht gegenüber dem Substrat elektrisch isoliert wird, als Elektrode mit einen Kontakt zur Kontaktierung bereitgestellt wird und
wobei bei dem Schritt S2 die Isolierungsschicht eingerichtet und angeordnet wird, als Feuchtigkeitsdiffusionsbarriere für Feuchtigkeitsdiffusion von dem Kontakt zu der Planarisierung zu wirken.According to one embodiment, a method for providing the above-described optoelectronic device for generating electromagnetic radiation comprises the steps:

• S1: providing the substrate,
• S2: Providing the insulation layer
• S3: providing the planarization for compensating a roughness of a main surface of the substrate facing the first electrode and the second electrode,
• S4: providing the functional layer structure, the first electrode and the second electrode, wherein the first electrode is arranged on a side facing the substrate of the functional layer structure and the second electrode is arranged on a side facing away from the substrate of the functional layer structure, so that the functional Layer structure is set up to generate the electromagnetic radiation by energizing the functional layer structure by means of the first electrode and the second electrode,

wherein in steps S2 and S4, the insulating layer and at least one of the electrodes are provided such that the insulating layer electrically isolates this electrode from the substrate,
wherein at step S4, the at least one electrode electrically insulated from the substrate by the insulating layer is provided as an electrode with a contact for making contact, and
wherein, at step S2, the insulating layer is arranged and arranged to act as a moisture diffusion barrier for moisture diffusion from the contact to the planarization.

Preferably, in step S3, a liquid is applied, which forms the planarization. In particular, the liquid may form a planarization consisting of a solid, for example by evaporation of a solvent.

Preferably, method steps S2 and S3 are carried out after method step S1. The method steps S2 and S3 are preferably carried out before the method step S4.

Preferably, the method further comprises the step S5 of providing the encapsulation layer to protect the functional layer structure from moisture. This can e.g. be carried out after the steps S1 to S4.

Hereinafter, the principle presented here will be explained in more detail with reference to drawings with reference to exemplary embodiments. The same reference numerals indicate the same elements in the figures. However, no scale relationships are shown, but individual elements may be shown exaggerated for better understanding.

Show it:

1A . 1B . 1C : An optoelectronic device according to the prior art,

2a . 2 B . 2c : An optoelectronic device according to a first embodiment,

3a . 3b . 3c : An optoelectronic device according to a second embodiment,

4a . 4b . 4c An optoelectronic device according to a third embodiment and

5a . 5b . 5c : An optoelectronic device according to a fourth embodiment and

6 A method for displaying an optoelectronic device according to one of the embodiments.

In 1A is an opto-electronic device 10 * shown in plan view according to the prior art. 1B shows a sectional view taken along the line A of 1A , 1C shows the section B of 1B in magnification.

The optoelectronic device 10 * comprises an electrically conductive substrate 11 (in 2A not visible) with a rough surface which forms an interface with other elements of the optoelectronic device 10 * forms. On this is a planarization layer 12 of an organic material arranged on top of which the substrate 11 opposite side has a lower roughness than on the substrate 11 facing side. On the substrate 11 opposite side of the planarization layer 12 are in turn a first electrode 14 and a second electrode 15 arranged.

Between the electrodes 14 . 15 is an organically functional layered structure 16 arranged when energized by means of the two electrodes 14 . 15 generates electromagnetic radiation. This is from the optoelectronic device 10 at least partially through the second electrode 15 through, but not through the substrate 11 therethrough.

On the aforementioned layers is an encapsulation layer 17 arranged to protect against moisture. This has recesses, so that corresponding contacts 24 . 25 the two electrodes 14 . 15 are accessible. The second electrode 15 has a first section 150 made of aluminum or silver with the contact 25 on and a second, translucent section 151 from indium tin oxide. Instead of an indium tin oxide layer, any conductive transparent layer may be provided, eg another thin metal layer or a layer of Ag nanowires.

As in 1B As shown, moisture can flow along moisture diffusion paths 30 via these recesses through the electrodes 14 and 15 through into the organic planarization layer 12 diffuse. Because the organic planarization layer 12 has a high lateral moisture transport capability, the moisture can be laterally via the organic planarization layer 12 to the first electrode 14 spread out and through the first electrode 14 into the organic functional layer structure 16 diffuse and damage them.

In 2A is an opto-electronic device 10 shown according to a first embodiment. 2 B shows a sectional view taken along the line A of 2A , 2C shows the section B of 2 B in magnification.

The optoelectronic device 10 comprises a flat substrate 11 (in 2A not visible), preferably of aluminum or silver, with a rough surface which forms an interface with other elements of the optoelectronic device 10 represents and here and below as the main surface 11a referred to as.

On this main surface 11a is a planarization layer 12 arranged from an organic material. The latter extends, as will be explained in more detail later, in a plan view of the main surface 11a not seen over the entire substrate 11 time. On the planarization layer 12 and the non-covered areas of the substrate 11 is an insulation layer 13 (in 2A not visible) made of an inorganic material. This extends in plan view of the main surface 11a seen over the entire substrate 11 time. The planarization layer 12 equals roughness of the substrate 11 at least partially. At least in part, that means congruent unevenness on the substrate 11 opposite side of the planarization layer 12 can still be present, but cause less roughness. The planarization layer 12 has accordingly on the substrate 11 remote interface 12a less roughness than on the substrate 11 facing interface 12b ,

On this insulation layer 13 are the two electrodes 14 . 15 with intervening organic functional layer structure 16 arranged so that the organic functional layer structure 16 when energized by means of the two electrodes 14 . 15 generates electromagnetic radiation. Finally, on the aforementioned layers is an encapsulation layer 17 arranged to protect against moisture. This has recesses, so that corresponding contacts 24 . 25 the two electrodes 14 . 15 are accessible.

In contrast to the prior art, the organic extends Planarization layer 12 in plan view of the main surface 11a of the substrate 11 seen not in the area of these recesses, but the insulation layer 13 , Due to this arrangement, virtually no moisture can pass through the recesses and the electrodes 14 . 15 through via the organic planarization layer 12 in which moisture easily spreads, to the functional layer structure 16 reach. The insulation layer 13 acts in a direction R, which is in an interface of the insulating layer 13 runs as a moisture diffusion barrier. However, the planarization layer extends 12 in plan view of the main surface 11a of the substrate 11 seen in an area of the functional layer structure 16 so that the two electrodes 14 . 15 and the functional layer structure 16 are arranged in this area on a planarized interface. Consequently, for example, the first electrode 14 be made of aluminum or silver and the functional layer structure 16 be designed such that the the substrate 11 remote interface of the first electrode 14 a good mirror effect for one of the substrate 11 Having opposite side of this interface has striking electromagnetic radiation.

The insulation layer 13 is made of a non-conductive material or comprises such a material. By non-conducting material is meant a material having an electrical conductivity of less than 10 ^-8 Ω ^-1 · m ^-1 . Because the insulation layer 13 over the entire substrate 11 extends, the substrate can 11 nevertheless consist of an electrically conductive material, without causing a short circuit between the two electrodes 14 . 15 comes. In general, it is sufficient to avoid such a short circuit when the insulation layer 13 is arranged such that it at least one of the electrodes 14 . 15 opposite the substrate 11 electrically isolated.

The second electrode 15 includes a first section 150 made of aluminum or silver, which is the contact area 25 and a second section electrically connected thereto 151 consisting of one for the of the functional layer structure 16 can be generated electromagnetic radiation at least partially permeable layer of indium tin oxide (ITO), so that the producible electromagnetic radiation through this layer of the optoelectronic device 10 can be delivered. Thus, damage to the ITO layer can be avoided by contacting. Instead of an indium tin oxide layer, any conductive transparent layer may be provided, eg another thin metal layer or a layer of Ag nanowires.

The insulating layer preferably has a layer thickness of at least 1 μm. Also, it may have a thickness that is at least equal to twice a roughness of the substrate, preferably at least equal to twice a maximum roughness of the substrate.

In the first embodiment described above, starting from the substrate 11 seen the insulation layer 13 the planarization layer 12 downstream. This may cause diffusion of constituents of the organic planarization layer 12 into the organic functional layer structure 16 be prevented.

In addition, enclose the insulation layer 13 and the substrate 11 the planarization layer 12 completely, leaving the planarization layer 12 through the insulation layer 13 in cooperation with the substrate 11 is encapsulated from all sides by moisture.

The electrodes 14 . 15 are in direct contact with the inorganic insulating layer 13 , whereby a mechanically particularly stable connection with the electrodes 14 . 15 is produced. Consequently, there is the possibility of the optoelectronic device 10 at the electrodes 14 . 15 to attach, for example to the contacts 24 . 25 To solder or stick or temporarily contact with pins for measurements.

In 3A is an opto-electronic device 10 shown according to a second embodiment. 3B shows a sectional view taken along the line A of 3A , 3C shows the section B of 3B in magnification.

The optoelectronic device 10 according to the second embodiment is constructed analogously to that of the first embodiment, with the difference that starting from the substrate 11 seen the planarization layer 12 the insulation layer 13 is subordinate. The insulation layer 13 downstream planarization layer 12 allows easy production of the over the entire substrate extending insulation layer, for example by means of a roll-to-roll method.

4A shows a sectional view of an optoelectronic device 10 according to a fourth embodiment. This is constructed analogously to that of the first embodiment, with the difference that the planarization layer 12 in plan view of the main surface 11a of the substrate 11 not seen over the entire functional layered structure 16 extends.

In 4C is the section B of 4A shown in magnification. Because the planarization layer 12 only partially exists and demensprechend only partially developed a planarization, has the first electrode layer 14 on the substrate 11 remote interface 14a in the thereby planarized areas 34a less roughness than non-planarized areas 34b , The metallic electrode layer 14 , which in the present case consists of aluminum or silver, is in the present embodiment of the substrate 11 on the side facing away from the substrate 11 remote interface 14a meeting electromagnetic radiation in both areas 34a and 34b averaged over the visible spectral range as well as over the Spectral range of the functional layer structure 16 generated electromagnetic radiation averaged over 90% reflective.

By means of the only partially provided planarization layer 12 generated two areas 34a and 34b an information is displayed which, when viewing the optoelectronic device 10 is visible against the emission direction E both in an operating state and in an inoperative state.

Present for an external viewer, as in 4B shown when viewing the optoelectronic device 10 opposite to the emission direction E in a radiation emission region 40 the shaded characters 41 "TXT" and a hatched two-character sign 42 , also known as a symbol or logo, visible. The line AA shows the position of the cut of 1A ,

The planarization layer 12 is in plan view of the substrate 11 seen in the entire hatched areas of the two circles of the symbol 42 and the letter "TXT" 41 available, but not outside these areas. Accordingly, those are the letters 41 and the circles 42 belonging areas 34a the surface facing away from the substrate 14a the first electrode layer 14 planarized and for impinging electromagnetic radiation in the visible spectral range and for that of the functional layer structure 16 reflective electromagnetic radiation and the remaining area 34b the interface 14a is matt reflective for such radiation. These different optical properties are due to the corresponding different reflection from outside the optoelectronic device 10 on the interface 14a pertinent electromagnetic radiation and the corresponding different reflection of the optoelectronic device 10 can be generated in an operating state as well as in an inoperative state for a counter to the emission direction E on the optoelectronic device 10 Visible viewer visible.

As an alternative to the characters and symbols, by means of the partially applied planarization layer 12 also a pattern, ie a uniform structure that repeats uniformly, are displayed, for example, parallel lines or a checkerboard pattern.

The in the 5A . 5B and 5C illustrated optoelectronic device 10 According to a fourth embodiment is constructed similarly to that of the third embodiment. 5A indicates accordingly one 4A analog sectional view, 5B one too 4B analogous representation of the in the radiation emission region 40 visible signs 41 . 42 and 5C one too 4C analogous magnification of section B of 2A ,

The only difference with the third embodiment is that the characters 41 . 42 in the fourth embodiment, that the planarization layer 12 in plan view of the substrate 11 seen in the entire area outside the two circles of the symbol 42 and the letter "TXT" 41 is present (hatched area in 2 B ) and in the range of these characters does not exist. Accordingly, for the external viewer, the opto-electronic device appears 10 contrary to the radiation emission direction E, the hatched area of 2 B because of the mirroring interface 14a the first electrode 14 unlike the non-hatched area of the characters 41 and 42 due to the matte interface 14a the first electrode 14 ,

In the embodiments described above, the planarization layer 12 on a the substrate 11 remote interface 12a have a roughness equal to or less than 50 nm.

In the embodiments described above, the planarization layer exists 12 made of a different material than the insulation layer 13 ,

In the embodiments described above, the insulating layer is made 13 of a non-conductive material or comprises such a material.

In the embodiments described above, the encapsulation layer 17 be formed as a single layer or as a layer stack or as a layer structure. It may be comprised of or formed from: alumina, zinc oxide, zirconia, titania, hafnia, tantalum oxide, lanthania, silica, silicon nitride, silicon oxynitride, indium tin oxide, indium zinc oxide, aluminum doped zinc oxide, poly (p-phenylene terephthalamide), nylon 66 , as well as mixtures and alloys thereof or tetrafluoroethylene (TFE). At the encapsulation layer 17 it may in particular be a thin-layer encapsulation (also referred to as TFE, thin-film encapsulation). This can consist, for example, of a plurality of individual layers produced by means of atomic layer deposition (also referred to as atomic layer deposition or ALD) or molecular layer deposition (also referred to as molecular layer deposition or MLD). The thin-layer encapsulation or its individual layers can also be produced by means of Ink Jet Printing or Plasma Enhanced Chemical Vapor Deposition (PECVD) or by means of the so-called "Vacuum Polymer Technology".

In the embodiments described above, the planarization layer 12 an organic material selected from the following group of materials include: epoxy resin, acrylate, polyurethane, polyimide, silicone, organopolysilazane, polysiloxane, styrene, polyester, polyectone. It may be printed, for example by means of a process selected from the following group of printing processes: screen printing, inkjet printing also known as inkjet printing, gravure printing or flexographic printing. It can also be coated, for example by means of nozzle coating, also called slot-die-coating, or by spray coating, also called spray-coating, both if necessary. In combination with subsequent back structuring. It can be applied in liquid form, for example printed or coated, and then cured, for example by means of thermal curing or by means of UV curing.

In the embodiments described above, the insulating layer 13 an inorganic material selected from the following group of materials include: oxide, nitride, oxynitride, carbide, metal oxide, metal nitride, metal oxynitride, metal carbide, ceramics, glass. In particular, the inorganic material may be silicon nitride (SiN), silicon oxide (SiO _x ), silicon oxynitride (SiNO _x ), silicon oxycarbonitride (SiCNO _x ), aluminum oxide (AlO _x ), titanium oxide (TiO _x ), antimony tin Oxide (ATO) or silicon carbide (SiC) act. This inorganic insulation layer 13 can by cathode sputtering, also called sputtering, chemical vapor deposition, also called chemical vapor deposition, or atomic layer deposition, also called atomic layer deposition, be generated. At the insulation layer 13 it can be a ceramic coating. At the insulation layer 13 it may also be an anodized layer, preferably on a substrate 11 containing or consisting of aluminum. It may also be a coating of glass or a coating containing glass, or a glassy coating.

The optoelectronic devices 10 According to the aforementioned embodiments, the electromagnetic radiation emit at least partially through the second electrode 15 therethrough. Alternatively, corresponding optoelectronic devices may also be used 10 be provided, which generates the generated electromagnetic radiation at least partially through the substrate 11 through, eg with a transparent insulation layer 13 and transparent planarization layer 12 ,

7 shows a method for producing an optoelectronic device according to one of the embodiments. The method comprises the steps of providing S1 of the substrate, providing the isolation layer S2, providing the planarization layer S3, providing the layered structure S4, the first electrode, and the second electrode. In step S3, a liquid is applied, which forms the planarization, which consists of a solid, by evaporation of a solvent. The method may further comprise step S5 of providing the encapsulation layer. The process steps are carried out in the following order S1, S2, S3, S4, S5 (optional). Alternatively, the following sequence S1, S3, S2, S4, S5 (optional).

LIST OF REFERENCE NUMBERS

10 *

 Optoelectronic device according to the prior art

10

 Optoelectronic device

11

 substratum

11a

 Main surface of the substrate

12

 Planarization layer

12a

 The substrate surface facing away from the planarization of the planarization

12b

 The substrate-facing interface of the planarization layer

13

 insulation layer

14

 First electrode

14a

 The substrate facing away from the interface of the first electrode

15

 Second electrode

150

 First section of the second electrode

151

 Second section of the second electrode

16

 Functional layer structure

17

 encapsulation

24

 Contact first electrode

25

 Contact second electrode

30

 Moisture diffusion path

34a

 First area of the first electrode

34b

 Second area of the first electrode

40

 emission region

41

 character

42

 character

A

 line

B

 neckline

R

Direction that runs in the main surface of the substrate

e

 emission direction

Claims (15)

Optoelectronic device ( 10 ) for generating an electromagnetic radiation, comprising: a substrate ( 11 ) a functional layer structure ( 16 ), one on the substrate ( 11 ) facing side of the functional layer structure ( 16 ) arranged first electrode ( 14 ) and one on a substrate ( 11 ) facing away from the functional layer structure ( 16 ) arranged second electrode ( 15 ), wherein the functional layer structure ( 16 ) is furnished, when energized the functional layer structure ( 16 ) by means of the first electrode ( 14 ) and the second electrode ( 15 ) to generate the electromagnetic radiation, an insulating layer ( 13 ), which at least one of the electrodes ( 14 . 15 ) relative to the substrate ( 11 ) and a planarization ( 12 ) for compensating a roughness of one of the first electrodes ( 14 ) and the second electrode ( 15 ) facing the main surface ( 11a ) of the substrate ( 11 ), wherein the at least one electrode passing through the insulating layer ( 13 ) relative to the substrate ( 11 ) is electrically isolated, a contact ( 24 . 25 ) for contacting, wherein the insulating layer ( 13 ) is arranged and arranged as a moisture diffusion barrier for moisture diffusion from the contact ( 24 . 25 ) to the planarization ( 12 ) to act. Optoelectronic device according to claim 1, wherein the first electrode ( 14 ), the second electrode ( 15 ), the functional layer structure ( 16 ), the isolation layer ( 13 ), the planarization ( 12 ) and the contact ( 24 . 25 ) at least partially on the main surface ( 11a ) of the substrate ( 11 ) are arranged. Optoelectronic device according to claim 1 or 2, wherein the planarization ( 12 ) in plan view of the main surface ( 11a ) of the substrate ( 11 ) not seen with the contact ( 24 . 25 ) overlaps. Optoelectronic device according to one of the preceding claims, wherein the insulating layer ( 13 ) in plan view of the main surface ( 11a ) of the substrate ( 11 ) over the entire contact ( 24 . 25 ) extends. Optoelectronic device ( 10 ) according to one of the preceding claims, wherein one of the substrates ( 11 ) facing away from the first electrode ( 14 ) or a substrate ( 11 ) facing the second electrode ( 14 ) in a region that is due to the planarization ( 12 ) is planarized, has a reflectivity of at least 50% for an electromagnetic radiation impinging on the interface. Optoelectronic device ( 10 ) according to one of the preceding claims, comprising an encapsulation layer ( 17 ) for protecting the functional layer structure ( 16 ) from moisture, which has a recess which causes the contact ( 24 . 25 ) makes available for contacting. Optoelectronic device ( 10 ) according to any one of the preceding claims, wherein the insulating layer ( 13 ) and the substrate ( 11 ) the planarization ( 12 ) completely co-operate cooperatively. Optoelectronic device ( 10 ) according to one of the preceding claims, wherein a roughness of a substrate ( 11 ) remote interface ( 12a ) of planarization ( 12 ) is less than or equal to 200 nm. Optoelectronic device ( 10 ) according to any one of the preceding claims, wherein the insulating layer ( 13 ) has a thickness of at least 1 micron. (Difference to the bottom TFE) Optoelectronic device ( 10 ) according to one of the preceding claims, wherein the planarization ( 12 ) comprises an organic material. Optoelectronic device ( 10 ) according to any one of the preceding claims, wherein the insulating layer ( 13 ) comprises an inorganic material. Optoelectronic device ( 10 ) according to one of the preceding claims, wherein the planarization ( 12 ) is configured and arranged such that at least one of the first and second electrodes ( 14 ) an interface ( 14a ), which in at least a first area ( 34a ) has a lower roughness than in a second region ( 34b ). Method for providing an optoelectronic device ( 10 ) for generating an electromagnetic radiation, comprising: providing (S1) a substrate ( 11 ), Providing (S2) an insulation layer ( 13 ), Providing (S3) a planarization ( 12 ) for compensating a roughness of one of the first electrodes ( 14 ) and the second electrode ( 15 ) facing the main surface ( 11a ) of the substrate ( 11 ), Providing (S4) a functional layer structure ( 16 ), a first electrode ( 14 ) and a second electrode ( 15 ), the first electrode ( 14 ) on a substrate ( 11 ) facing side of the functional layer structure ( 16 ) and the second electrode on a substrate ( 11 ) facing away from the functional layer structure ( 16 ) is arranged so that the functional layer structure ( 16 ), when the functional layer structure ( 16 ) by means of the first electrode ( 14 ) and the second electrode ( 15 ) to generate the electromagnetic radiation, wherein the insulating layer ( 13 ) and at least one of the electrodes ( 14 . 15 ) are provided (S2, S4) such that the insulation layer ( 13 ) these Electrode ( 14 . 15 ) relative to the substrate ( 11 ), wherein the at least one electrode ( 14 . 15 ) passing through the insulating layer ( 13 ) relative to the substrate ( 11 ) is electrically isolated, as an electrode ( 14 . 15 ) with a contact ( 24 . 25 ) is provided for contacting (S4) and wherein when providing (S2) the insulation layer ( 13 ) it is set up and arranged as a moisture diffusion barrier for moisture diffusion from the contact ( 24 . 25 ) to the planarization ( 12 ) to act. Method according to claim 13, wherein in providing (S3) the planarization ( 12 ) is applied a liquid, the planarization ( 12 ). A method according to claim 13 or 14, wherein an opto-electronic device ( 10 ) is produced according to one of claims 2 to 12.

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