WO2016124537A1

WO2016124537A1 - Organic light-emitting diode device and method for producing an organic light-emitting diode device

Info

Publication number: WO2016124537A1
Application number: PCT/EP2016/052058
Authority: WO
Inventors: Evelyn TRUMMER-SAILER; Thomas Wehlus; Nina Riegel; Erwin Lang; Richard Baisl; Simon SCHICKTANZ; Philipp SCHWAMB; Jörg FARRNBACHER
Original assignee: Osram Oled Gmbh
Priority date: 2015-02-02
Filing date: 2016-02-01
Publication date: 2016-08-11
Also published as: DE102015101463A1

Abstract

The invention to an organic light-emitting diode device comprising a substrate (101, 201, 301, 401, 501, 601, 801, 901, 1001), on which a plurality of pixels are formed. The organic light-emitting diode device further comprises a separating structure (210, 310, 410, 510, 610, 810), which is formed between the pixels and on the substrate (101, 201, 301, 401, 501, 601, 801, 901, 1001). The organic light-emitting diode device further comprises a reflective layer (220, 320), which is arranged on the separating structure (210, 310, 410, 510, 610, 810). The reflectivity of the reflective layer (220, 320) is higher than the reflectivity of the separating structure (210, 310, 410, 510, 610, 810). The organic light-emitting diode device further comprises an organic functional layer structure (103) having at least one organic layer (203, 303, 403, 503, 603, 803, 903, 1003). The at least one organic layer (203, 303, 403, 503, 603, 803, 903, 1003) extends across the entire reflective layer (220, 320).

Description

ORGANIC LIGHT DIODE DEVICE AND METHOD FOR PRODUCING AN ORGANIC LIGHT DIODE DEVICE

DESCRIPTION

The invention relates to an organic

Light emitting diode device and a method for producing an organic light emitting diode device. An organic light emitting diode device may be, for example, one, two or more organic light emitting diodes (OLEDs) or parts or segments of organic light emitting diodes.

Conventionally, in an OLED display, the

Separation or isolation of the individual pixels by means of a photoresist or a polyimide. Light injected into the photoresist may cause loss

Lead light intensity. An estimation has shown that the loss of light intensity varies according to the size ratio of the pixels and height of the photoresist or the polyimide. For a display, the estimated loss of intensity may be in the two-digit percentage range, for example about 10%. The object of the invention is to provide an efficient and easy to manufacture organic light-emitting diode device

to provide.

The object is achieved according to one aspect of the invention by an organic light-emitting diode device, the

Substrate on which a plurality of pixels is formed comprises. Further, the organic light emitting diode device has a separation structure formed between the pixels and on the substrate. Furthermore, the organic

Light emitting diode device on a reflection layer, which is arranged on the separation structure. The reflectivity of

Reflection layer is higher than the reflectivity of Separation structure. The organic light-emitting diode device furthermore has an organically functional layer structure with at least one organic layer. The at least one organic layer extends over the gesarate

Reflective layer. Due to the presence of the

Reflection layer on the separation structure may allow penetration of electromagnetic radiation into the separation structure

be reduced. Thus, losses of light intensity are reduced and it becomes efficient

Light emitting diode device provided.

According to a development, the reflection layer comprises a metal or is formed from a metal. According to a development, the separation structure has a

Polyimide or is formed from a polyimide.

The object is achieved according to a further aspect of the invention by an organic light-emitting diode device having a substrate on which a plurality of pixels

is trained. Furthermore, the organic

Light emitting diode device on a separation structure formed between the pixels and on the substrate, wherein the separation structure comprises a matrix material. Furthermore, the organic light-emitting diode device has a decoupling substance which is arranged in or on the separating structure. Of the

Refractive index of the decoupling substance is higher than that

Refractive index of the matrix material. Due to the presence of a decoupling substance in the separation structure, wherein the

Refractive index of the decoupling substance is higher or lower than the refractive index of the matrix material, the

Discharge of electromagnetic radiation from the

Separation structure can be increased. Furthermore, by the

Presence of a decoupling substance on the separation structure an ingress of electromagnetic radiation into the

Separation structure can be reduced. Thus, losses of light intensity are reduced and it becomes efficient

Light emitting diode device provided. According to a development, the matrix material has a

Polyimide or is a polyimide.

According to a development, the decoupling material

Scattering particles on or is formed from scattering particles.

According to a development, each pixel has in each case a first electrode and a second electrode. According to a development, the second electrode is at least partially formed over the separation structure and a

Insulating layer is formed between the separation structure and the second electrode. According to a development, the separating structure is at least partially formed on or above the first electrode.

According to a development, the second electrode extends over the plurality of pixels and over the separating structure.

As a result, the organic light-emitting diode device can be formed in a simple manner, since the second electrode can be formed, for example, unstructured.

According to a development, at least one conductor track element is formed on the first electrode or on the second electrode, wherein an insulating element on the

Conductor element and the first electrode or the second electrode is formed such that the insulating element completely covers the conductor element.

According to a further development, a further reflection layer is formed on the insulating element and the reflectivity of the further reflection layer is higher than the reflectivity of the insulating element.

According to a development, the insulating element has a further matrix material and a further AuskoppeIstoff, wherein the further decoupling substance on or in the Insulating element is arranged and, wherein the refractive index of the further decoupling substance is higher than the refractive index of the further matrix material. The object is achieved according to a further aspect of the invention by a method for producing an organic light emitting diode device. The method comprises forming a plurality of pixels on a substrate. Furthermore, the method comprises forming a separation structure between the pixels and on the substrate. Furthermore, the method comprises forming a reflection layer on the separation structure. The refiectivity of the reflection layer is higher than the reflectivity of the separation structure. The organic

Light emitting diode device is formed such that the organic light emitting diode device organically

functional layer structure with at least one

having organic layer. The at least one organic layer is formed such that the at least one organic layer extends over the entire reflection layer.

According to a development, the reflection layer is formed from a metal or the reflection layer is formed such that it comprises a metal.

According to a development, the separation structure is formed from a polyimide or the separation structure is formed such that it comprises a polyimide. The object is achieved according to a further aspect of the invention by a method for producing an organic light-emitting diode device. The method comprises forming a plurality of pixels on a substrate. Further, the method comprises forming a separation structure between the pixels and on the substrate, wherein the separation structure is formed such that the separation structure

Has matrix material. The method further includes

Arranging a decoupling substance in or on the separation structure on. The refractive index of the decoupling substance is higher than the refractive index of the matrix material,

According to a development, the matrix material is formed from a polyimide or the matrix material is formed such that it comprises a polyimide.

According to a development of the decoupling material

Formed scattering particles or the decoupling material is formed such that it has scattering particles.

According to a further development, each pixel becomes such

formed such that each pixel has a first electrode and a second electrode.

According to a development, the second electrode

formed at least partially over the separation structure and an insulating layer is formed between the separation structure and the second electrode.

According to a development, the separation structure is at least partially formed on or above the first electrode.

According to a development, the second electrode is formed over the plurality of pixels and over the separation structure.

According to a further development, a further reflection layer is formed on the insulating element and the reflectivity of the further reflection layer is higher than the reflectivity of the insulating element. According to a development, the insulating element is formed such that the insulating element another

Has matrix material and another decoupling, wherein the further decoupling on or in the

Insulating element is arranged and, wherein the refractive index of the further decoupling substance is higher than the refractive index of the further matrix material.

Show it:

Figure 1 is a schematic cross-sectional view of a

organic light emitting diode;

Figure 2a is a schematic cross-sectional view of a

Embodiment of an organic

light emitting diode device

Figure 2b is a schematic plan view of a

Embodiment of an organic

Light emitting diode device;

Figure 3 is a schematic cross-sectional view

Embodiment of an organic

Light emitting diode device;

Figure 4 is a schematic cross-sectional view e

Embodiment of an organic

Light emitting diode device; Figure 5 is a schematic cross-sectional view e

Embodiment of an organic

Light emitting diode device;

Figure 6 is a schematic cross-sectional view of a

From an organic game

Light emitting diode device; Figure 7a is a schematic plan view of a

Embodiment of an organic

Light emitting diode device; Figure 7b is a schematic plan view of a

Embodiment of an organic

Light emitting diode device;

Figure 7c is a schematic plan view of a

Embodiment of an organic

Light emitting diode device;

Figure 8 is a schematic cross-sectional view of a

Ausführungsbeispie1s an organic

Light emitting diode device;

Figure 9 is a schematic cross-sectional view of a

Embodiment of an organic

Light emitting diode device;

Figure 10 is a schematic cross-sectional view of a

Embodiment of an organic

Light emitting diode device; FIG. 11 shows a flow diagram of a method for producing an organic light-emitting diode device; and

FIG. 12 shows a flow diagram of a method for producing an organic light-emitting diode device.

In the following detailed description, reference is made to the accompanying drawings, which form a part of this specification, and in which is shown by way of illustration specific embodiments in which the invention may be practiced. In this regard, directional terminology such as "top", "bottom", "front", "back", "front", "rear", etc. is used with reference to the orientation of the described figure (s). There For example, components of embodiments may be positioned in a number of different orientations, the directional terminology is illustrative and is in no way limiting. It is understood that other embodiments may be utilized and structural or logical changes may be made without departing from the scope of the present invention. It should be understood that the features of the various embodiments described herein may be combined with each other unless specifically stated otherwise. The following detailed description is therefore not to be taken in a limiting sense, and the scope of the present invention is defined by the appended claims.

In the following detailed description, reference is made to the accompanying drawings, which form a part of this specification, and in which is shown by way of illustration specific embodiments in which the invention may be practiced. It is understood that other embodiments may be utilized and structural or logical changes may be made without departing from

To deviate scope of the present invention. It should be understood that the features of the various embodiments described herein may be combined with each other unless specifically stated otherwise. The following detailed description is therefore not to be taken in a limiting sense, and the scope of the present invention is defined by the appended claims.

In the context of this description, the terms

"connected", "connected" and "coupled" used to describe both a direct and indirect connection, a direct or indirect connection and a direct or indirect coupling. The figures identical or similar elements are provided with identical reference numerals, as appropriate. An organic light emitting diode device may comprise one, two or more organic light emitting diodes. Optionally, an organic light-emitting diode device may also have one, two or more electronic components. An electronic component may have, for example, an active and / or a passive component. An active electronic component may comprise, for example, a driver circuit, a power source, a computing, control and / or regulating unit and / or one or more transistors. A passive electronic component may, for example, comprise a capacitor, a resistor, a diode or a coil.

A light-emitting diode may be an electromagnetic radiation-emitting semiconductor light-emitting diode, an inorganic

Be light emitting diode and / or an organic light emitting diode. A light emitting diode may be part of an integrated circuit. A light-emitting diode can emit, for example, light in the visible range, UV light and / or infrared light.

The term "translucent" or "translucent layer" can be understood in various embodiments that a layer or a material is permeable to light, for example for that of the

electromagnetic radiation source generated light,

For example, one or more wavelength ranges, for example, for light in a wavelength range of visible light (for example, at least in one

Subregion of the wavelength range from 380 nm to 780 nm). By way of example, the term "translucent layer" in various exemplary embodiments is to be understood as meaning that substantially all of the amount of light coupled into a structure (for example a layer) is coupled out of the structure (for example layer), whereby part of the light can be scattered in this case ,

The term "transparent" or "transparent layer" can be understood in various embodiments be that a layer is transparent to light

(For example, at least i a portion of the

Wavelength range from 380 nm to 780 nm), where in ine

Structure (for example, a layer) coupled light without scattering or light conversion is also coupled out of the structure (for example, layer),

1 shows an embodiment of an organic

Light-emitting diode 100. The organic light-emitting diode 100 can be used as a surface component, for example as a

Surface light source to be formed. The organic

Light-emitting diode 100 has a carrier 101. The carrier 101 may be translucent or transparent. Of the

Carrier 101 serves as a carrier element for electronic elements or layers, for example light-emitting elements.

The carrier 101 may, for example, comprise or be formed from plastic, metal, glass, quartz and / or a semiconductor material. Further, the carrier 101 may be a

Plastic film or a laminate with one or more plastic films or be formed from it. The carrier 101 may be mechanically rigid or mechanically flexible. The carrier 101 may also be referred to as

Substrate 101 may be referred to. On the carrier 101 is an opto-electronic

Layer structure formed. The optoelectronic

Layer structure has a first electrode 102, wherein the first electrode 102 on or above the carrier 101

is trained . The first electrode 102 may also be referred to as the first electrode layer 102. Between the carrier 101 and the first electrode layer 102, a first, not shown, barrier layer, for example a first barrier thin layer, may be formed. The first

Barrier thin film serves to on the carrier 101

protect trained elements from harmful external influences, such as oxygen and / or moisture. The first electrode 102 may be formed as an anode or as a cathode. The first electrode 102 may be translucent or transparent. The first electrode 102 comprises an electrically conductive material, for example metal and / or a conductive transparent oxide

{transparent conductive oxide, TCO) or one

Layer stacks of multiple layers comprising metals or TCOs. For example, the first electrode 102 may comprise a stack of layers of a coral of a layer of a metal on a layer of a TCO, or vice versa. An example is a silver layer deposited on an indium tin oxide (ITO) layer (Ag on 1TO) or ITO-Ag-ITO multilayers. The first electrode 102 may alternatively or in addition to the materials mentioned:

Networks of metallic nanowires and particles, for example of Ag, networks of carbon nanotubes, graphene particles and layers and / or networks of semiconducting nanowires. Above the first electrode 102 is an optically functional

Layer structure, for example, an organic functional layer structure 103, the optoelectronic

Layer structure formed. The organically functional layer structure 103 can also be described as organic

functional layer structure. The

organic functional layer structure 103 may

for example, have one, two or more sub-layers. For example, the organically functional

Layer structure 103, a hole injection layer, a

Hole transport layer, an emitter layer, a

Electron transport layer and / or a

Having electron injection layer. The

Hole injection layer serves to reduce the band gap between the first electrode and hole transport layer. In the hole transport layer, the hole conductivity is larger than the electron conductivity. The hole transport layer serves to transport the holes. In the electron transport layer, the electron conductivity is larger than that Hole conductivity, The electron transport layer is used to transport the holes. The electron injection layer serves to reduce the bandgap between the second electrode and the electron transport layer. Furthermore, the organic functional layer structure 103 may have one, two or more functional layer structure units, each of which has the sublayers and / or further intermediate layers. The organic functional layer structure 103, also as an organic functional layer structure 103, can be made translucent or transparent.

Over the organic functional layer structure 103 is a second electrode 104 of the optoelectronic

Layer structure formed. The second electrode 104 may be formed according to any one of the configurations of the first electrode 102, wherein the first electrode 102 and the second electrode 104 may be the same or different. The first electrode 102 serves, for example, as the anode or cathode of the optoelectronic layer structure. The second electrode 104 serves as a cathode or anode of the optoelectronic corresponding to the first electrode

Layer structure.

The optoelectronic layer structure is an electrically and / or optically active region. The active region is, for example, the region of the optoelectronic component 100 in which electrical current is used to operate the

optoelectronic component 100 flows and / or in which electromagnetic radiation is generated or absorbed. On or above the active area, a getter structure (not shown) may be arranged. The getter layer can be translucent, transparent or opaque. The getter layer may include or be formed of a material that absorbs and binds substances that are detrimental to the active area. The optically active

Region 107 may also be referred to as a light-emitting region. An encapsulation layer 105 of the optoelectronic layer structure, which encapsulates the optoelectronic layer structure, is formed over the second electrode 104. The

Encapsulation layer 105 may also be referred to as encapsulation 105. The encapsulation layer 105 may serve as a second barrier layer, for example as a second barrier layer

Barrier thin film, be formed. The

Encapsulation layer 105 may also be referred to as

Thin film encapsulation 105 may be referred to. The

Encapsulation layer 105 forms a barrier to chemical contaminants or atmospheric agents, particularly to water (moisture) and oxygen. The encapsulation layer 105 may be formed as a single layer, a layer stack, or a layered structure. The encapsulation layer 105 may include or be formed from: alumina, zinc oxide, zirconia,

Titanium oxide, hafnium oxide, tantalum oxide, lanthanum oxide,

Silicon oxide, silicon nitride, silicon oxynitride,

Indium tin oxide, indium zinc oxide, aluminum-doped zinc oxide, and mixtures and alloys thereof. Optionally, the first barrier layer on the carrier 101

Corresponding to an embodiment of

Encapsulation layer 105 may be formed. Over the encapsulation layer 105 is formed an adhesive layer (not shown). The adhesive layer has, for example, an adhesive, for example a

Adhesive, for example, a laminating adhesive, a paint and / or a resin. The adhesive layer can

For example, have particles that scatter electromagnetic radiation, such as light-scattering particles.

Above the adhesive layer is a cover body 106

educated . The adhesive layer serves to attach the cover body 106 to the encapsulation layer 105

Cover body 106 has, for example, plastic, glass and / or metal. For example, the cover body 106 may be formed substantially of glass and a thin Metal layer, such as a metal foil, and / or a graphite layer, such as a graphite laminate, have on the glass body. The cover body 106 serves to protect the conventional optoelectronic component 100,

for example, against mechanical forces from the outside. Furthermore, the cover body 106 for distributing and / or

Dissipate heat, which in the conventional

optoelectronic component 100 is generated.

For example, the glass of the cover body 106 may serve as protection against external influences, and the metal layer of the cover body 106 may serve for distributing and / or discharging the heat generated during operation of the conventional optoelectronic component 100. According to one

From exemplary embodiment of the cover body 106 is formed as the carrier 101.

2a shows a schematic cross-sectional view of an organic light-emitting diode device according to a

Embodiment.

An organic light emitting diode device may include a plurality of organic light emitting diodes 100. The organic light emitting diodes may be the same or different from each other and share a common substrate. The organic light-emitting diodes 100 may, for example, in

Formed a Matri next to each other. FIG. 2a shows an embodiment of an organic light-emitting diode which is surrounded by a separating structure 210, as described in detail below. In addition to the organic light-emitting diode and in addition to the separating structure 210, further organic light emitting diodes may be formed, which are not shown for the sake of simplicity. The organic light-emitting diodes 100 can furthermore also share at least one of the layers described above, for example by virtue of this layer passing through the separating structure 210 toward one of the layers

adjacent organic light-emitting diode 100 extends. The organic light emitting diode device has a substrate 201 on which a plurality of pixels are formed. Furthermore, the organic light emitting diode device has a

Separation structure 210 formed between the pixels and on the substrate 201. Furthermore, the organic light-emitting diode device has a reflection layer 220, which is arranged on the separation structure 210. The reflectivity of the reflection layer 220 is higher than the Re selectivity of the separation structure 210. The organic light emitting diode device further comprises an organic functional layer structure having at least one organic layer 203. The

At least one organic layer 203 extends over the entire reflection layer 220. Due to the presence of the reflection layer 220 on the separation structure 210, penetration of electromagnetic radiation into the light source can occur

Separation structure 210 can be reduced. Thus, losses of light intensity are reduced and it becomes efficient

Light emitting diode device provided. According to one embodiment, the substrate 201 is formed according to an embodiment of the substrate 101 described above. According to an embodiment, the substrate 201 has a plurality of transistors, for example, thin-film transistors (TFTs) for driving the plurality of pixels. According to one

Embodiment, the substrate 201 is formed flat and has a processing surface, wherein on the processing surface, the separation structure 210 and the

Plurality of pixels are arranged. In case that

Substrate 201 comprises thin film transistors, the substrate 201 or a portion of the substrate 201 as a TFT plane

be designated. In the operation of the organic

Light emitting diode device, the pixels can be controlled with a driver unit, not shown, so that by means of the organic light emitting diode device one, two or more images, in particular a sequence of images, such as a movie, a video or a video game are visually displayed. The driver unit may be on or in the substrate 201 be educated. The driver unit, not shown, has an electronic circuit. The driver unit has in particular a not shown

Operating time control, a data driver unit and a gate drive unit, by means of which the pixels can be controlled depending on image data to be displayed. To drive the pixels, the driver unit changes nominal values of at least one control variable by means of which the pixels

be controlled. The setpoint values of the control variable depend on the image data. The image data contains the

Image information for the images to be displayed and can, for example, by means of an internal or external

Enter the arithmetic unit. Depending on the driving of the pixels by means of the driver unit and the corresponding image data, the light-emitting components emit light in the different colors, whereby further colors can be displayed by means of color mixing of the generated light.

According to one embodiment, one pixel is out of the

Plurality of pixels according to one described above

Embodiment of the Organic Light-emitting Diode 100

educated. Furthermore, a pixel of the plurality of pixels may also be referred to as single pixels or individual pixels. The individual pixels can be the same or different from each other. The plurality of pixels may be considered as a plurality of organic light emitting diodes formed side by side.

The individual pixels each have a first electrode 202 and a second electrode 204. The first electrode 202 is disposed on or above the carrier 201. On or above the first electrode is the organically functional

Layer structure arranged. On or above the organic functional layer structure, the second electrode 204 is arranged. A single pixel may be in a plan view

For example, approximately in the form of a rectangle, a square, a circle or any other suitable shape. Two single pixels, approximately the shape a rectangle are shown for example in Fig.2b. The first electrode 202 is formed according to an embodiment of the first electrode 102 described above. The second electrode 204 is formed according to an embodiment of the second electrode 104 described above.

According to an exemplary embodiment, the separation structure 210 is arranged in a structured manner on or above the substrate 201. The separation structure 210 has a plurality of recesses 224, wherein the plurality of pixels in the plurality of

Recesses 224 is arranged. The separation structure 210 has a thickness d, for example in a range from about 0.2 μm to about 20 μm, for example in a range from about 1 μm to about 3 μm, for example in a range from about 1 μm to about 2 μm. The separation structure 210 has an upper surface 240, wherein the surface normal of the upper surface 240 parallel to the normal surface of the

Processing surface 230 is. Furthermore, the

Separation structure on a lower surface 250. The lower surface 250 and the processing surface 230 may be in direct contact with each other, whereas the upper surface 240 is a surface of the separation structure 210 facing away from the substrate 201. The upper surface 240 and the lower surface 250 are connected to each other by means of a side surface. The

Side surface has a curvature, for example, as shown schematically in Fig.2a. The curved one

Side surface may also be referred to as edge or resist edge. A single pixel can, depending on the shape of the single pixel, be surrounded by several curved sides.

According to an embodiment, the separation structure 210 is at least partially formed on or above the first electrode 202.

According to one embodiment, the separation structure 210 comprises a photoresist, also referred to as resist or Photoresist, up. The separation structure 210 comprises a polyimide or is formed of a polyimide. Polyimides are not normally prone to this during a manufacturing process which takes place using a vacuum.

outgas. Thereby, the production of the organic light emitting diode device is simplified.

The separation structure 210 may be transparent or translucent,

According to one embodiment, the separation structure is at least partially formed on or above the first electrode. According to a development, the reflection layer comprises a metal or is formed from a metal. A

Reflection layer of metal can be a particularly high

Have reflectivity, for example, a reflectivity of about 20% to about 99.8%, for example from about 50% to about 99%, for example from about 80% to about 95%.

The at least one organically functional layer 203 may also be referred to as organic layer 203. According to one embodiment, the organically functional layer structure is as described above

Embodiment of the organic functional

Layer structure 103 formed. For simplification, only the at least one organic functional layer 203 of the organic functional layer structure is shown in FIG. The. at least one organically functional

Layer 203 is formed on or over the separation structure 210 and in the pixel spaces. The area that lies between the pixels may be considered a pixel space

be designated.

The organic functional layer 203 is in the

Pixel region 224 and arranged in the flank region 223. The organic functional layer 203 is in the Flanking region 223 and disposed above the reflective layer 220 such that the projection of the organic functional layer 203 overlaps the reflective layer 220. Alternatively, the organic functional layer 203 is disposed throughout in the pixel region 224, in the flank region 223, and in the release structure region 222, the organic functional layer 203 extends over the plurality of pixels and over the separation structure 210.

The individual pixels can be designed in such a way that individual pixels are approximately an electromagnetic one

Radiation with the same properties, such as light with the same or with approximately the same color emit.

In another embodiment, the pixels are formed such that the individual pixels or certain pixel groups with an electromagnetic radiation

emit different properties, for example, the pixels or pixel groups can use light

emit different colors. In one

In one embodiment, the pixels are configured such that a first pixel subgroup emits red light, a second pixel subgroup emits green light, and a third pixel subgroup emits blue light.

For example, the organic light emitting diode device may include one or more color filters or one or more

Have conversion layer (s).

According to an embodiment, the second electrode 204 is formed at least partially over the separation structure 210, and an insulating layer 260 is formed between the separation structure 210 and the second electrode 204. By means of an insulating layer 260 can easily a short circuit between the second electrode 204 and a

underlying layer can be prevented. In the case of a conductive reflection layer, for example, insulation can be effected by means of the insulating layer 260.

Alternatively, the reflection layer 220 may be applied only on the flank without contact with the first electrode 202, which may be formed, for example, as an anode.

The insulating layer 260 is formed of an electrically insulating material. The insulating layer 260 may include or be formed from a photoresist. The insulating layer 260 may be formed of a polyimide, or the insulating layer 260 may include a polyimide.

The insulating layer 260 may be translucent or transparent.

According to an embodiment, the second electrode 204 is formed at least partially over the separation structure 210, and an insulation layer 260 is formed between the separation structure 210 and the second electrode 204.

According to one embodiment, the second electrode 204 extends over and over the plurality of pixels

Separation structure 210. This allows the organic

Light emitting diode device can be formed in a simple manner, since the second electrode 204 can be formed over a large area in the organic light emitting diode device.

According to an embodiment, the second electrode 204 is formed in the separation structure region 222 such that the second electrode 204 covers the entire separation structure region 222.

According to an exemplary embodiment, the second electrode extends over the plurality of pixels and over the pixels

Separation structure. This allows the organic

Light emitting diode device can be formed in a simple manner, since the second electrode can be formed, for example, unstructured. 2a shows by way of example a cross section of a single pixel together with the separating structure 210 surrounding the pixel. On the substrate 201, the first electrode 201

educated. On the first electrode 201 is the

Separation structure 210 formed. The separation structure 210 is at least partially on the first electrode 202

educated . The separation structure 210 is formed, for example, on an edge portion of the first electrode 202. The first electrode 202 has an area that is free from the separation structure 210. On the separation structure 210 and in the

Area of the curved side surface of the separation structure 210, the reflection layer 220 is formed. The reflection layer 220 can also be referred to as a coupling-out layer in the following. The decoupling layer 220 covers the curved ones

Side surfaces. According to the exemplary embodiment illustrated in FIG. 2a, the decoupling layer 220 is in direct contact with the first electrode 202. Furthermore, the decoupling layer 220 has a curvature similar to that of the curved side surface. On the coupling-out layer 220, the insulating layer 260 is arranged. The insulating layer 260 may completely cover the Auskopp lschicht 220. The

Insulating layer 260 isolates decoupling layer 220 from the at least one organic functional layer 203. According to one embodiment, insulating layer 260 is disposed in the entire pixel area 224, which is described in detail below. On the first electrode 202, the organic functional layer structure 203 is formed. On the at least one organic functional layer 203, the second electrode 204 is formed.

As shown in Figure 2a, the coupling-out layer 220, the insulating layer 260, the organic functional

Layer structure 203 and the second electrode 204 on a similar curvature as the curved side surface.

Due to the presence of the reflection layer 220 on the separation structure 210, penetration of electromagnetic radiation into the separation structure 210, which is also referred to below as Resist layer 210 may be reduced. Thus, losses of light intensity are reduced and a particularly efficient light emitting diode device is provided. Furthermore, higher efficiency can be achieved without far-reaching changes in the chip design or in the design of the OLED. There may also be higher ones

Lifetimes are achieved.

Fig.2b shows a schematic representation of a plan view of an embodiment of an organic

Light-emitting diode device.

According to one embodiment, the organic

Light-emitting diode device has an edge region 221 that is free of pixels and is free of the separating structure 210,

According to one embodiment, the organic

Light emitting diode device on a separation structure region 222. The separation structure region 222 has the separation structure 210.

As described in detail above, the separation structure 210 has curved side surfaces. The curved side surfaces may in particular be arranged at the edges of the separating structure 210, for example at those edges of the

Separation structure 210, which face the pixels. The flank region 223 shown in FIG. 2b has curved edges

Side surfaces on. The separating structure 210 may also have curved side surfaces at their edges facing the edge region, which are not shown for the sake of simplicity.

The separation structure 210 has recesses 224 in which the pixels are formed. The region of the recesses 224 may also be referred to as pixel region 224.

3 shows an embodiment of an organic

Light-emitting diode device, for example, can largely correspond to the embodiment shown in FIG. A first electrode 302 is formed on a substrate 301 formed according to the above-described embodiment of the substrate 101, 201. The first electrode 302 is formed in accordance with one above

described embodiment of the first electrode 102, 202 is formed. At least partially on the first electrode 302, a separation structure 310 is formed. The separation structure 310 is, for example, on an edge region of the first

Electrode 302 is formed. The first electrode 302 has an area which is free from the separation structure 310. A of the separation structure 310 and in the region of the curved

Side surface of the separation structure 310, the reflection layer 320 is formed. The reflective layer 320 covers the curved side surface and is formed on the partition structure 310. The reflection layer 320 is formed only on the separation structure 310. An organic functional layer 303, which according to an embodiment of the

at least one organic functional layer 303

is formed is above the first electrode 302, above the reflective layer 320 and above the separation structure 310th

arranged. In the area of the first electrode 302 that is free of the separation structure 310, the organic functional layer 303 is formed on the first electrode 302. In regions of the substrate 301 having the separation structure 310, the organic functional layer 303 is

at least partially formed on the separation structure 310. In the region of the curved side walls of the separation structure 310, the organic functional layer 303 is formed predominantly on the coupling-out layer. On or above the at least one organic functional layer 303, the second electrode 304 is formed. The second electrode 304 is formed in the region of the first electrode 302 that is free of the separation structure 310. According to one

Embodiment and as shown in Fig. 3 and Fig. 2a, the second electrode 304 may also be at least partially formed in a region of the substrate 301 having the separation structure 310. 4 shows an embodiment of an organic

Light-emitting diode device, for example, can largely correspond to the embodiment shown in Figure 3. On a substrate 401, which is formed according to an embodiment of the substrate 101, 201, 301 described above, a separation structure 410 is formed. The separation structure 410 can be made according to one of the above

described embodiment of the separation structure may be formed. The first electrode 402 is formed on the substrate 401 and in the pixel region 224. The first electrode 402 is formed in the flank region 223. The first electrode 402 is formed according to an embodiment of the reflective layer 220. The first electrode 402 comprises a metal or is formed of a metal.

As illustrated in FIG. 1, the first electrode 402 may also be at least partially disposed in the separation structure region 222

be educated.

The at least one organic functional layer 403 is formed on the first electrode 402 and in the pixel region 224. The organic functional layer 403 is disposed in the flank region 223 and above the first electrode 402 such that the projection of the organic

functional layer 403 overlaps the first electrode 402. The at least one organic functional layer 403 is further formed in the flank region 223. According to one embodiment, the at least one organic functional layer 403 covers approximately the entire

Separation structure region 222. The second electrode 404 is on or above the at least one organically functional

Layer 403 and formed in the pixel area 224. According to an embodiment, the second electrode 404 is further formed in the flank region 223. According to one

Embodiment covers the at least one organic functional layer 403 approximately the entire

Separation structure area 222. According to one embodiment, the anode is after the

Forming the separation structure 410, wherein the formation of the separation structure can also be referred to as PI process, deposited to at the edge as

Serve reflection layer. The isolation to the cathode is either via at least one trained

Organic layer 403, or via the insulating layer 260,

Alternatively, the first electrode 402 may be formed in the pixel region 224 and approximately in the entire separation structure region 222. In this case, the

Separation structure region 222 have a region which is free from the second electrode 404. Figure 5 shows an embodiment of an organic

Light emitting diode device, for example, can largely correspond to the embodiment shown in Figure 4.

The light-emitting diode device illustrated in FIG. 5 has a substrate 501, a first electrode 502, at least one organic-functional layer 503, a second electrode 504 and a separating structure 510. The substrate 501 is according to an embodiment of the invention described above

Substrate 101, 201, 301, 401 formed. The first electrode 502 is as described above

Embodiment of the first electrode 402 is formed. The at least one functional layer 503 is formed according to an embodiment of the at least one functional layer 203, 303, 403 described above. The separation structure 510 is according to an embodiment of the separation structure 210, 310, 410 described above

educated. The first electrode 502 and the second electrode 504 are each at least partially in the

Separation structure region 222 formed.

In contrast to the exemplary embodiment shown in FIG. 4, the organic light-emitting diode device of FIG. 5 has an insulating layer 560. The insulating layer 560 may according to one described in detail above

Embodiment of the insulating layer 260 may be formed. According to an embodiment, the insulating layer 560 is formed of a polyimide. The insulating layer 560 may be formed between the first electrode 502 and the second electrode 504. The insulating layer 560 may be on the at least one organic functional layer 503

be educated. According to an embodiment, the insulating layer 560 is formed on the first electrode 502. According to one embodiment, the insulating layer 560 is translucent or transparent.

The insulating layer 560 serves to electrically isolate the first electrode 502 from the second electrode 504 in the separation structure region 222. The at least one organically functional layer 503 may be made so thin that an electrical short circuit between the first electrode 502 and the second electrode 504 may occur. 9 shows an embodiment of an organic

Light-emitting diode device.

9 shows a substrate 901, which is formed according to an embodiment of the substrate 101, 201, 301, 401, 501, 601, 801 described above. On the substrate 901, a first electrode 902 is formed. The first electrode 902 is described in detail above

Embodiment of the first electrode 202, 302, 402, 502, 602, 802 formed.

On the first electrode 902 is at least one

Conductor element 926 formed. The at least one

Conductor element 926 can also be referred to below as busbar 926 or as electrical busbar 926. Furthermore, several can also be provided on first electrode 902

Track elements to be formed. The at least one conductor element 926 can be used to improve the

lateral current distribution of the first electrode 902 serve. The at least one conductor track element 926 is formed from or comprises an electrically conductive material. According to one exemplary embodiment, this is

at least one conductor track element 926 formed of a metal or has such. Alternatively, the at least one trace element 926 on the second

Electrode 904 may be formed.

An insulating member 928 is provided on the wiring member and the first electrode 902 or the second electrode 904

formed such that the insulating 928 the

Track element 926 completely covered. The insulating member 928 may be formed according to an embodiment of the insulating layer 260. The insulating element 928 can

have approximately the shape of a half-cylinder, which is formed on the conductor element 926.

According to one embodiment is another

Reflection layer 920 formed on the insulating member 928 and the reflectivity of the further reflection layer 920 is higher than the reflectivity of the insulating. The further reflection layer may be formed according to an embodiment of the reflection layer 220. The further reflection layer 920 may be on the edge of the

Insulating element 928 and partially formed on the first electrode 902. The further reflection layer 920 may be formed on the insulating element 928 such that a light coupling into the insulating element 928 is reduced.

On or above the further reflection layer 920, on or above the insulating element 928 and on or above the first electrode 902, an organic functional layer 903 is formed. The organic functional layer 903 is formed according to an embodiment of the organic functional layer 203, 303, 403, 503, 603, 803 described above. On the organic functional layer 903, a second electrode 904 is formed. The second electrode 904 is according to one described above

Embodiment of the second electrode 104, 204, 304, 404, 504, 604, 804 is formed. The areas with electrical busbars usually appear darker than the areas next to it. Therefore, the use of the further reflective layer 920 may be advantageous when used in OLED lighting products. Since OLED lighting products usually have very fine electrical busbars or very fine busbar grids, they can be outshined, whereby an improvement in the visual impression can be achieved. Fig.6 shows an embodiment of an organic

Light-emitting diode device.

The organic light emitting diode device has a substrate 601. The substrate 601 is formed according to an embodiment of the substrate 101, 201, 301, 401, 501 described above. On the substrate 601, a plurality of pixels are formed. Furthermore, the organic

Light emitting diode device on a separation structure 610, which is formed between the pixels and on the substrate 601. The separation structure 610 is formed according to an embodiment of the separation structure 210, 310, 410, 510 described above.

The separation structure 610 comprises a matrix material. According to one embodiment, the matrix material is a

Photoresist or has a photoresist on. According to one

Ausführungsbeispiei, the matrix material on a polyimide or is a polyimide. For example, polyimide may have a refractive index of about 1.6 to about 1.8.

Furthermore, the organic light-emitting diode device has a decoupling substance. The decoupling substance is arranged in or on the separating structure 610. The refractive index of the Decoupling material is higher or lower than the refractive index of the matrix material. By the presence of a decoupling substance in the separation structure 610, wherein the refractive index of the decoupling substance is higher than that

Refractive index of the matrix material, the decoupling of electromagnetic radiation from the separation structure 610 can be increased. Furthermore, the presence of a decoupling substance on the separation structure 610 can reduce the penetration of electromagnetic radiation into the separation structure 610. Thus, losses of light intensity are reduced and a particularly efficient organic light-emitting diode device is provided.

According to one exemplary embodiment, the decoupling substance has scattering particles or is formed from scattering particles.

For example, scattering particles may comprise TiO ₂ or be formed from T1O ₂ . For example, Ti0 ₂ may be a

Refractive index of about 2.2 to about 2.6. According to a further embodiment, the

Refractive index of the decoupling material may also be lower than that of the matrix material. For example, the

Decoupling substance having air bubbles. The decoupling substance may, for example, comprise Al 2 O 3, the decoupling substance being in a matrix material with a very high refractive index

is embedded.

The light-emitting diode device illustrated in FIG. 6 furthermore has a first electrode 602, at least one organically functional layer 603, a second electrode 604.

Each pixel may include a first electrode 602 and a second electrode 604, respectively. The first electrode 602 is formed according to an embodiment of the first electrode 202, 302 described above. The at least one functional layer 603 is formed according to an embodiment of the at least one functional layer 203, 303, 403, 503 described above. According to an embodiment, the second electrode 604 is formed at least partially over the separation structure 610. Further, an insulating layer (not shown) may be provided between the separation structure 610 and the second electrode 604

be educated.

According to an embodiment, the separation structure 610 is formed at least partially on or above the first electrode 602.

In contrast to the exemplary embodiment which has been described above with regard to FIG. 3, the decoupling substance is formed on the separating structure 610 instead of the reflection layer 320.

As shown in Figure 6, the decoupling material may be formed on the separation structure 610 such that the

Auskoppelstof forms a layer 620 on the separation structure 610. A layer 620 formed by the AuskoppeIstoff may also be referred to as AuskoppelSchicht 620 hereinafter. The decoupling layer 620 may be formed with respect to its arrangement on the separation structure 610 and in the organic light emitting diode device analogous to an embodiment of the reflective layer 220, 320.

For example, the decoupling layer 620 is on the

Separation structure 610 and formed in the region of the curved side surface of the separation structure 610. The decoupling layer 620 may completely cover the curved side surfaces of the separation structure 610. According to one embodiment, the coupling-out layer 620 is formed in the entire flank region 223. Furthermore, the coupling-out layer 620 can also be formed in the entire separating structure region 222.

In the case that the scattering particles are formed electrically insulating with respect to an electric current, the decoupling layer 620 may be in direct contact with the first electrode 602, as shown in Figure 6. The Decoupling layer 620 may also be referred to below as scattering layer 620.

A scattering layer 620 can be easily and by means of

cost-effective method, for example

Inkjet printing, are produced. Furthermore, in the case of electrically insulating scattering particles, there is no need for an insulating layer 260, which simplifies the manufacturing process of the organic light-emitting diode device.

Scattering particles have a scattering particle size which is approximately in the range of the wavelength of the to be scattered

electromagnetic radiation. An improvement in the decoupling can be achieved, for example, by applying a scattering layer 620 to the curved side surfaces of the separating structure 610, also referred to below as the trailing edge 610. TiO ₂ particles, Hf0 ₂ particles, Ta ₂ 0 ₅ particles, ZrC ^ particles and particles of neodymium oxide are among the particles that can be scattered.

Terbium oxide and / or yttrium oxide.

A decoupling layer, which according to the above-described

Embodiment of the decoupling layer 620 is formed, may be formed instead of the further reflection layer 920 on the insulating member 928.

7a shows a schematic representation of a top of an embodiment of an organic

Light emitting diode device, In Fig.7a, Fig.7b and Fig.7c are various ways to arrange the reflective layer 220, 320 or the

Decoupling layer 620 on the separation structure 210, 310, 610 shown.

FIG. 7 a shows a part of a separating structure region 722. The separating structure region 722 has a

Pixel area 724 on. In the pixel area 724, a functional layer 720 is arranged. The functional layer 720 is either according to one embodiment of the

Reflective layer 220, 320 or according to a

Embodiment of the decoupling layer 620 formed. The separation structure region 722 is according to one above

described embodiment of the separation structure region 222 is formed. The pixel area 724 is formed according to an embodiment of the pixel area 224 described above. The separating structure region 722 is according to an embodiment of the invention described above

Separation structure region 222 formed. The pixel area 724 is framed by the area having the functional layer 720. The entire area between the

individual pixel regions 724 has the functional layer 720. The separation structure region 722 has an area that is free from the functional layer 720.

7a shows a plurality of pixels with a non-separated functional layer 720. Depending on the type of deposition, this exemplary embodiment may be simpler in terms of process technology than embodiments with separation.

FIG. 7b shows a schematic illustration of a top view of an embodiment of an organic

Light emitting diode device, for example, can largely correspond to the embodiment shown in Fig. A

In contrast to that shown in Fig. A

Embodiment, has the area shown in Figure 7b between the pixels, an area which is free from the functional layer 720.

Fig. 7b shows several pixels with a separated one

functional layer 720. The advantage is that such a separated or pixelated arrangement of the functional layer 720 on the separation structure 722 results in a very good pixel definition. This can

advantageous for the pixel impression in an operating state (engl, on-state) and in an inoperative state (off-state).

7c shows a schematic representation of a top view of an embodiment of an organic

Light emitting diode device, for example, can largely correspond to the embodiment shown in FIG

According to an exemplary embodiment, the decoupling layer 720 may be arranged only sporadically around the pixel region 724. In other words, portions of the edge of the pixels may be free from the output 720.

FIG. 7c shows a plurality of pixels with a separated but non-rotating functional layer 720. The advantage is that, for example, areas of a bottom emitter, the

Structural elements in the substrate, also referred to as backplane, also seem to emit.

8 shows an embodiment of an organic

Light emitting diode device, for example, the largely in

6 may correspond to the embodiment shown in FIG.

In contrast to that shown in Fig.6

Embodiment, the decoupling substance is not as

Decoupling layer 620 disposed on the separation structure 610, but the decoupling material is disposed in the matrix material of the separation structure 810. The organic light emitting diode device illustrated in FIG. 8 has a substrate 801, a first electrode 802, at least one organic functional layer 803, a second one

Electrode 804 and a separation structure 810 on. The substrate 801 is according to one described above

Embodiment of the substrate 101, 201, 301, 401, 501, 601 formed. The first electrode 802 is the first according to an embodiment described above

Electrode 202, 302, 602 formed. The at least one functional layer 803 is according to one above

described from leadership example of at least one

functional layer 203, 303, 403, 503, 603 formed. The separation structure 810 is formed according to an embodiment of the separation structure 210, 310, 410, 510, 610 described above. The decoupling substance has scattering particles or is formed from scattering particles. Furthermore, the

Decoupling material arranged in the matrix material of the separation structure 810. For example, scattering particles can be easily integrated into the separation structure, for example by simply adding the scattering particles into the matrix material.

Scattering particles can be homogeneous or inhomogeneous in the

Matrix material may be arranged.

An improvement of the decoupling can be done for example by the introduction of scattering particles in the resist. Stray particles, for example from T1O2, can be added directly to the resist.

It should be noted that the above

Embodiments of the organic light emitting diode device may further comprise an encapsulation, an adhesive layer and a cover body. The encapsulation is formed according to an embodiment of the encapsulation 105 described with reference to FIG. Furthermore, the

Adhesive layer according to one described above From management example, the Haf medium layer formed. Further, the cover body is formed according to an embodiment of the cover body 106 described above, Fig.10 shows an embodiment of an organic

Light-emitting diode device.

10 shows a substrate 1001, which is formed according to an embodiment of the substrate 101, 201, 301, 401, 501, 601, 801, 901 described above. On the

Substrate 1001, a first electrode 1002 is formed. The first electrode 1002 is formed according to an embodiment of the first electrode 202, 302, 402, 502, 602, 802, 902 described in detail above.

On the first electrode 1002 is at least one

Conductor element 1026 formed. The at least one

Conductor element 1026 is formed according to an embodiment of the at least one conductor element 926.

Furthermore, a plurality of electrodes may also be provided on the first electrode 1002

Track elements to be formed. Alternatively, the at least one conductor element 1026 on the second

Electrode 1004 may be formed. An insulating member 1028 is formed on the wiring member 1026 and the first electrode 1002 or the second electrode 1004 such that the insulating member 1028 forms the insulating member 1028

Track element 1026 completely covered. The

Insulating element 1028 is formed according to an embodiment of insulating element 328.

The insulating element 1028 comprises a further matrix material and a further AuskoppeIstoff, wherein the further

Decoupling material is arranged in the insulating element 1028 and, wherein the refractive index of the further decoupling substance is higher than the refractive index of the further matrix material. The further matrix material is according to an exemplary embodiment of the matrix material described above

educated . Furthermore, the decoupling material is formed according to an exemplary embodiment of the decoupling substance described above. For example, the matrix material may be

Be polyimide, the decoupling can scattering particles

and the decoupling material may be distributed homogeneously or inhomogeneous in the matrix material. 11 shows a flowchart of a method for

Producing an organic light-emitting diode device,

for example, the above-explained organic light emitting diode device.

The flowchart shown in FIG. 11 relates to a method for producing an organic

Light emitting diode device, wherein the organic

Light emitting diode device has a reflective layer 220, 320, 720. Embodiments of the organic

Light emitting diode device with the reflective layer 220, 320, 720 are described in detail above and

For example, in Figures 2a, 3 and 7 shown. Further, the flowchart of Fig. 11 is referred to

Embodiments of the organic light emitting diode device, wherein the organic light emitting diode device, a first

Electrode 402, 502 and the first electrode 402, 502 serves as the reflection splitter. Embodiments of the organic light emitting diode device with the first electrode 402, 502, wherein the first electrode 402, 502 as

Reflection layer serves are shown for example in Figures 4 and 5.

The process for producing an organic

Light emitting diode device comprises forming a plurality of pixels on a substrate 201, 301, 401, 501. Further, the method comprises forming a separation structure 210, 310, 410, 510 between the pixels and on the substrate 201, 301, 401, 501. Furthermore, the method has a formation The reflectivity of the reflection layer 220, 320 is higher than the reflectivity of the separation structure 210, 310, 410, 510. The organic light-emitting diode device is designed in such a way that the organic light-emitting diode device is formed on the separation structure 210, 310, 410, 510

Light-emitting diode device an organically functional

Layer structure 103 with at least one organic

Layer 203, 303, 403, 503 on eist. The at least one organic functional layer 203, 303, 403, 503 is formed in such a way that the at least one organic layer 203, 303, 403, 503 extends over the entire reflection layer 220, 320.

In 1101, a plurality of pixels are formed on the substrate 201, 301, 401, 501. The plurality of pixels may be considered as a plurality of organic light emitting diodes formed side by side. Each pixel is formed such that each pixel has a first electrode 202, 302, 402, 502, at least one organic functional layer 203, 303, 403, 503 and a second electrode 204, 304, 404, 504.

In various exemplary embodiments, for example the exemplary embodiments illustrated in FIGS. 2 a and 3, the first electrode 202, 302 is formed on the substrate 201, 301 and before the formation of the separation structure 210, 310.

In various exemplary embodiments, for example the exemplary embodiments illustrated in FIGS. 1 and 5, the first electrode 402, 502 is formed on the substrate 401, 501 and after forming the separation structure 410, 510 such that the first electrode 402, 502 partially of the

Separation structure is formed. The first electrode 202, 302, 402, 502 and the second

Electrode 204, 304, 404, 504 are formed according to an embodiment described above. The first

Electrode 202, 302, 402, 502 will be the same or different formed by the second electrode 204, 304, 404, 504. The first electrode 202, 302, 402, 502 and / or the second

Electrode 204, 304, 404, 504 may be formed using optical lithography, a mask, or other suitable technique. The first electrode 202, 302, 402, 502 and / or the second electrode 204, 30, 404, 504 may be formed by physical vapor deposition. The organically functional layer 203, 303, 403, 503 is formed according to a further described embodiment. For example, the organic functional layer 203, 303, 403, 503 is screen printed,

Inkjet printing, knife coating, spraying and / or a

AufdampfVerfahrens trained.

I 1102 becomes the separation structure 210, 310, 410, 510

educated . The separation structure 210, 310, 410, 510 will be according to an embodiment described above

educated . The separation structure 210, 310, 410, 510 may be formed using optical lithography, a shadow mask, or using any other suitable method. The release structure 210, 310, 410, 510 may be screen printed, ink jet printed, doctored or

Spraying be formed.

According to one embodiment, the separation structure 210, 310, 410, 510 is formed from a polyimide or the

Separation structure 210, 310, 410, 510 is formed to include a polyimide.

The second electrode 204, 304, 404, 504 may be at least partially over the separation structure 210, 310, 410, 510

and an insulating layer 260, 560 may be formed between the separation structure 210, 310, 410, 510 and the second electrode 204, 304, 404, 504. The

Insulating layer 260, 560 will follow one of the above

described embodiment formed. The Insulating layer 260, 560 may be formed using optical lithography, a shadow mask, or using any other suitable method. The

Insulating layer 260, 560 may be screen printed,

Ink jet printing, knife coating or spraying are formed. The insulating layer 260, 560 can by means of

Atomic layer deposition (ALD) and / or chemical vapor deposition (CVD, chemical vapor

deposition) are formed.

In 1103, the reflection layer 220, 320 is formed. The reflection layer 220, 320 is formed according to an embodiment described above. The

Reflection layer 220, 320 may be formed using optical lithography, shadow mask, or under

Be formed using another suitable method. The reflection layer 220, 320 may be formed by a physical vapor deposition. According to one embodiment, the reflection layer

220, 320 formed of a metal or the reflection layer 220, 320 is formed so as to include a metal. As shown in FIG. 5 and FIG. 5, the formation of the

Reflection layer have the formation of the first electrode 402, 502 in the flank region 223.

According to an embodiment, the second electrode 204, 304, 404, 504 is above and above the plurality of pixels

Separation structure 210, 310, 410, 510 formed.

12 shows a flow chart of a method for

Producing an organic light-emitting diode device, for example the organic light-emitting diode device explained above. The flowchart shown in FIG. 12 relates to a method for producing an organic

Light emitting diode device, wherein the organic

Light emitting diode device has a decoupling,

Embodiments of the organic light-emitting device with the AuskoppeIstoff are detailed above

described and illustrated for example in Figures 6, 7 and 8, the method for producing an organic

Light emitting diode device has a forming 1201 a

Plurality of pixels on a substrate 601, 801. Furthermore, the method comprises forming 1202 a separating structure 610, 810 between the pixels and on the substrate 601, 801, wherein the separating structure 610, 810 is formed such that the separating structure 610, 810 comprises a matrix material. The method further comprises arranging 1203 a decoupling substance in or on the separation structure 610, 810. The refractive index of the decoupling substance is higher than the refractive index of the matrix material.

According to one embodiment, the decoupling substance is formed from scattering particles or the decoupling substance is formed such that it has scattering particles.

The matrix material may be formed of a polyimide, or the matrix material may be formed to have a polyimide. The formation 1201 of the plurality of pixels as well as the formation 1202 of the separation structure 610, 810 takes place according to exemplary embodiments described above.

The decoupling substance can, as shown in FIG. 6, be arranged on the separating structure 610. The decoupling material can be determined using an optical lithography, a

Shadow mask or be arranged on the separation structure 610 using another suitable method. Of the Decoupling substance can be screen printed,

Rotary coating, ink jet printing, doctor blading or spraying are formed. For example, the

Äuskoppelstoff be dispersed in a suitable solvent and then be arranged by means of a spin coating on the separation structure 610. Subsequently, the solvent can be removed, for example by evaporating the solvent. Subsequently, areas of the resulting decoupling layer can be removed again, for example by means of a suitable

Etching method. According to one embodiment, the

Decoupling agent are so mixed with a suitable solvent that a paste is formed. The result

resulting paste can be screen printed on the

Separation structure 610 can be arranged.

The decoupling material can furthermore be arranged in the matrix material, as shown in FIG. Arranging the

Decoyant in the matrix material may include an admixture of the ash coupler into a liquid matrix material.

The decoupling substance can then be arranged on the substrate 801 together with the still liquid matrix material. Subsequently, the liquid matrix material can be cured, for example by heating the matrix material. Structuring of the matrix material can be carried out, for example, by means of optical lithography or another suitable process.

The two methods described above, the method for producing an organic light-emitting diode device with

Reflection layer and the method for producing an organic light emitting diode device with decoupling, both can form at least one

Printed circuit board element 926, 1026 (shown for example in FIG. 9 and FIG. 10). The conductor element 926,

1026 is performed according to one described above

Embodiment formed. The conductor element 926, 1026, for example, by means of a physical

Gas phase deposition can be formed.

According to one embodiment, the at least one conductor element 926, 1026 on the first electrode 902,

1002 or formed on the second electrode 904, 1004. , and wherein an insulating member 928, 1028 on the

Conductor element 926, 1026 and the first electrode 902, 1002 or the second electrode 904, 1004 is formed such that the insulating element 928, 1028 the

Track element 926, 1026 completely covered.

The first electrode 902, 1002 is formed according to an embodiment of the first electrode 902, 1002 described above. The second electrode 90, 1004 is formed according to an embodiment of the second electrode 904, 1004 described above.

According to one embodiment, another

Reflection layer 920 formed on the insulating 928, 1028 and the reflectivity of the other

Reflection layer 920 is higher than the reflectivity of insulating element 928, 1028. The further reflection layer 920 is formed in accordance with an embodiment of the further reflection layer 920 described above. The others

Reflection layer 920 may be formed using optical lithography, a shadow mask, or using any other suitable method. The further reflection layer 920 can be detected by means of a physical

Gas phase deposition can be formed.

According to one exemplary embodiment, the insulating element 928, 1028 is formed such that the insulating element 928, 1028 has a further matrix material and a further decoupling substance, wherein the further decoupling substance is arranged on or in the insulating element 928, 1028 and, wherein the Refractive index of the further decoupling substance is higher than the refractive index of the further matrix material,

The further decoupling material can, as shown in Figure 9, on the insulating 928, 1028 are arranged. Of the

Decoupling agent can be made using an optical

Lithography, a shadow mask or using any other suitable method on the insulating 928, 1028 are arranged. The further decoupling substance can be screen-printed, spin-coated,

Ink jet printing, doctoring or spraying are formed. For example, the further decoy can be dispersed in a suitable solvent and

connect by means of a spin coating on the

Insulating element 928, 1028 are arranged. Subsequently, the solvent can be removed, for example by evaporating the solvent. Subsequently, regions which have the further decoupling substance can be removed again, for example by means of a suitable etching process. According to one embodiment, the further decoupling substance can be mixed with a suitable solvent in such a way that a paste is formed. The resulting paste may be screen printed on the insulating member 928, 1028.

The further output material can furthermore, as shown in FIG

represented, are arranged in the further matrix material. The arrangement of the further decoupling substance in the further matrix material may be a blending of the

The ejector has O'ffs in a liquid further matrix material. The further decoupling substance can then be arranged together with the still liquid further matrix material on the first electrode 1002 and on the conductor track element 1026. Subsequently, the liquid further matrix material can be cured, for example by heating the further matrix material. A structuring of the further matrix material can, for example, by means of an optical lithography or other suitable process.

In various embodiments, the method of fabricating the organic light emitting diode device may include features of the organic light emitting diode device, and the organic light emitting diode device may include features of the

Process for producing the organic

Light emitting diode device have such and insofar as that the features are each usefully applicable. This means, for example, that the subject matter of the dependent device claims are correspondingly applicable to the method and, accordingly, as dependent

Procedural claims can be formulated

The invention is not limited to those specified

Embodiments limited. For example, the embodiments shown in Figures 1, 2a, 2b, 3, 4, 5, 6, 7a, 7b, 7c, 8, 9 and 10 may be combined.

LIST OF REFERENCE NUMBERS

100 light emitting diode

101 carriers

102 first electrode

103 organic functional layer structure

104 second electrode

105 encapsulation layer

106 cover body

107 optically active region

201 optically active region

202 first electrode

203 first electrode

204th-wide electrode

210 separation structure

220 reflection layer

230 processing interface

240 upper surface

250 lower surface

260 separation structure

d thickness

221 border area

222 separation structure area

223 flank area

224 recesses

301 substrate

302 first electrode

303 organically functional layer

304 second electrode

310 separation structure

320 reflection layer

401 substrate

402 first electrode

403 organic layer

404 second electrode

410 separation structure

501 substrate

502 first electrode 503 organic layer

504 second electrode

510 separation structure

560 insulating layer

601 substrate

602 first electrode

603 organic layer

604 second electrode

610 separation structure

620 reflection layer

720 functional layer

722 separation structure area

724 pixel area

801 substrate

802 first electrode

803 organic layer

804 second electrode

810 separation structure

901 substrate

902 first electrode

903 organic layer

904 second electrode

920 reflection layer

926 trace element

928 insulating element

1001 substrate

1002 first electrode

1003 organic layer

1004 second electrode

1026 trace element

1028 insulating element

1101, 1102, 1103, 1201, 1202, 1203 method steps

Claims

Organic light-emitting diode device, comprising:

• a substrate (101, 201, 301, 401, 501, 601, 801, 901, 1001) on which a plurality of pixels are formed;

A separation structure (210, 310, 410, 510, 610, 810) formed between the pixels and on the substrate (101, 201, 301, 401, 501, 601, 801, 901, 1001};

A reflection layer {220, 320), which is located on the

Separation structure (210, 310, 410, 510, 610, 810)

is arranged;

Wherein the reflectivity of the reflective layer (220, 320) is higher than the reflectivity of the

Separation structure (210, 310, 410, 510, 610, 810);

Wherein the organic light emitting diode device further comprises an organic functional layer structure (103) having at least one organic layer (203, 303, 403, 503, 603, 803, 903, 1003); and

• wherein the at least one organic layer

(203, 303, 403, 503, 603, 803, 903, 1003) extends over the entire reflective layer (220, 320).

The organic light emitting diode device according to claim 1, wherein the reflective layer (220, 320) comprises a metal or is formed of a metal.

Organic light-emitting diode device according to claim 1 or

2,

wherein the separation structure (210, 310, 410, 510, 610, 810) comprises a polyimide or is formed from a polyimide.

4. Organic light-emitting diode device comprising:

A substrate {101, 201, 301, 401, 501, 601, 801, 901, 1001) on which a plurality of pixels are formed;

A separation structure (210, 310, 410, 510, 610, 810) formed between the pixels and on the substrate (101, 201, 301, 401, 501, 601, 801, 901, 1001), the separation structure (210, 310, 410, 510, 610, 810) have a matrix material;

• a decoupling substance in or on the

Separation structure (210, 310, 410, 510, 610, 810)

is arranged;

• wherein the refractive index of the decoupling substance is higher or lower than the refractive index of the matrix material.

5. Organic light-emitting diode device according to claim 4,

wherein the matrix material comprises a polyimide or is a polyimide.

6. Organic light-emitting diode device according to claim 4 or 5,

wherein the decoupling substance has scattering particles or is formed from scattering particles.

7. Organic light-emitting diode device according to one of

Claims 1 to 6,

wherein each pixel has a first electrode (102, 202, 302, 402, 502, 602, 802, 902, 1002) and a second electrode (104, 204, 304, 404, 504, 604, 804, 904, 1004), respectively ,

The organic light emitting diode device according to claim 7, wherein the second electrode (104, 204, 304, 404, 504, 604, 804, 904, 1004) is at least partially over the

Separation structure (210, 310, 410, 510, 610, 810) is formed and an insulating layer (260, 560) between the separation structure (210, 310, 410, 510, 610, 810) and the second electrode (104, 204, 304, 404, 504, 604, 804) is formed.

Organic light emitting diode device according to claim 7 or 8,

wherein the separation structure (210, 310, 410, 510, 610, 810) is at least partially formed on or above the first electrode (102, 202, 302, 402, 502, 602, 802).

Organic light-emitting diode device according to one of

Claims 7 to 9,

wherein the second electrode (104, 204, 304, 404,

504, 604, 804) over the plurality of pixels and over the

Separation structure (210, 310, 410, 510, 610, 810) extends.

Organic light-emitting diode device according to one of

Claims 7 to 10,

wherein at least one conductor track element (926, 1026) is formed on the first electrode (102, 202, 302, 402, 502, 602, 802) or on the second electrode (104, 204, 304, 404, 504, 604, 804) , and where a

Insulating element (928, 1028) on the conductor element

(926, 1026) and the first electrode (102, 202, 302, 402, 502, 602, 802) or the second electrode (104, 204, 304, 404, 504, 604, 804) is formed such that the insulating element (928, 1028) that

Track element (926, 1026) completely covered.

The organic light emitting diode device according to claim 11, wherein another reflective layer (920) is disposed on the

Insulating element {928, 1028) is formed and the

Ref selectivity of the further reflection layer {920) is higher than the reflectivity of the insulating element (928, 1028).

An organic light emitting diode device according to claim 12, wherein the insulating member (928, 1028) is another

Matrix material on ice and another Decoupling substance, which is arranged on or in the insulating element (928, 1028), wherein the refractive index of the further decoupling substance is higher than that

Refractive index of the further matrix material.

Process for producing an organic

Light emitting diode device, the method comprising:

Forming a plurality of pixels on a substrate (101, 201, 301, 401, 501, 601, 801, 901, 1001);

Forming a separation structure (210, 310, 410, 510, 610, 810) between the pixels and on the substrate (101, 201, 301, 401, 501, 601, 801, 901, 1001);

Forming a reflection layer (220, 320) on the separation structure (210, 310, 410, 510, 610, 810);

Separation structure (210, 310, 410, 510, 610, 810);

• wherein the organic light-emitting diode device is formed such that the organic

Light emitting diode device an organic functional layer structure (103) with at least one

organic layer (203, 303, 403, 503, 603, 803, 903, 1003); and

Wherein the at least one organic layer (203, 303, 403, 503, 603, 803) is formed such that the at least one organic layer (203, 303, 403, 503 ₍ 603, 803, 903, 1003) overlies the entire reflective layer (220, 320) extends,

Method according to claim 14,

wherein the reflective layer (220, 320) is formed of a metal, or wherein the reflective layer (220, 320) is formed to include a metal,

Method according to claim 14 or 15,

wherein the separation structure (210, 310, 410, 510, 610, 810) is formed of a polyimide or wherein the Separation structure (210, 310, 410, 510, 610, 810) is formed such that it comprises a polyimide.

Process for producing an organic

Light emitting diode device, the method comprising:

Forming a separation structure (210, 310, 410, 510, 610, 810) between the pixels and on the substrate {101, 201, 301, 401, 501, 601, 801, 901, 1001), the separation structure (210, 310, 410, 510, 610, 810) is formed such that the separation structure {210, 310, 410, 510, 610, 810) comprises a matrix material;

• arranging a decoupling substance in or on the

Separation structure (210, 310, 410, 510, 610, 810);

• wherein the refractive index of the decoupling substance is higher than the refractive index of the matrix material.

Method according to claim 17,

wherein the matrix material is formed from a polyimide or wherein the matrix material (210, 310, 410, 510, 610, 810) is formed to include a polyimide.

Method according to claim 17 or 18,

wherein the decoupling material is formed from scattering particles or wherein the decoupling material is formed such that it has scattering particles.

Method according to one of claims 14 to 19,

wherein each pixel is formed such that each pixel has a first electrode (102, 202, 302, 402, 502, 602, 802) and a second electrode (104, 204, 304, 404, 504, 604, 804), respectively.

Method according to claim 20,

wherein the second electrode {104, 204, 304, 404, 504, 604, 804) is at least partially over the separation structure (210, 310, 410, 510, 610, 810) is formed and a

Insulating layer (260, 560) between the separation structure

(210, 310, 410, 510, 610, 810) and the second electrode

(104, 204, 304, 404, 504, 604, 804) is formed.

Method according to claim 20 or 21,

Method according to one of claims 20 to 22,

wherein the second electrode (104, 204, 304, 40, 504,

604, 804) is formed over the plurality of pixels and over the separation structure (210, 310, 410, 510, 610, 810).

Method according to one of claims 20 to 23,

wherein on the first electrode (102, 202, 302, 402, 502, 602, 802) or on the second electrode (10, 204, 304, 404, 504, 604, 804) at least one conductor track element

(926, 1026) is formed, and wherein a

Insulating element (928, 1028) on the conductor element (926, 1026) and the first electrode (102, 202, 302, 402, 502, 602, 802) or the second electrode (104, 204, 304, 404, 504, 604, 804) is formed such that the insulating member (928, 1028) the

Track element (926, 1026) completely covered.

Method according to claim 24,

wherein a further reflection layer (926, 1026) on the insulating member (928, 1028) is formed and the ref lectivity of the further reflection layer (926, 1026} is higher than the reflectivity of the insulating.

Method according to claim 24,

wherein the insulating member (928, 1028) is formed such that the insulating member (928, 1028) comprises another matrix material and another one Decoupling material, wherein the further decoupling material on or in the insulating {928, 1028) is arranged, and, wherein the refractive index of the other ndex

Decoupling material is higher than the refractive index of the other matrix material.