DE102013106815A1 - Optoelectronic component and method for producing an optoelectronic component - Google Patents

Abstract

In various exemplary embodiments, an optoelectronic component (140, 160, 250, 350) is provided, the optoelectronic component (140, 160, 250, 350) comprising: an electrically active region (136) having an optically active region (132) and an optical inactive area (134); wherein the electrically active region (136) comprises at least one electrical bus bar (118) formed in the optically active region (132); an encapsulation structure on or above the electrically active region (136); wherein the encapsulation structure has a support structure (122) on or above the electrical bus bar (118) in the optically active region (132).

Description

In various embodiments, an optoelectronic component and a method for producing an optoelectronic component are provided.

An organic optoelectronic device (shown in FIG 6 ), for example an OLED, can be an anode 604 and a cathode 608 with an organic functional layer system 606 in between. The organic functional layer system 606 may comprise one or more emitter layers (not shown) in which electromagnetic radiation is generated, one or more charge carrier pair generation layer structures (not shown) each consisting of two or more charge generating pairs ("charge generating layer"). CGL) for charge carrier pair generation, and one or more electron block layers (not shown), also referred to as Hole Transport Layer (HTL), and one or more Lochblockadeschichten (not shown), also referred to as an electron transport layer (s) ("Electron transport layer" - ETL) to direct the flow of electricity. Organic-based optoelectronic components, for example organic light emitting diodes (OLEDs), are finding increasing widespread use in general lighting, for example as surface light sources. An organic optoelectronic device conventionally comprises: a first electrode 604 on or over a carrier 602 is trained. On or above the first electrode 604 is an organic functional layered structure 606 educated. Over or on the organic functional layer structure 606 is a second electrode 608 educated. The second electrode 608 is by means of an electrical insulation 610 from the first electrode 604 electrically isolated. The electrical insulations 610 is configured such that a current flow between the first electrode 604 and the second electrode 608 is prevented. The second electrode 608 is with a second contact pad 614 physically and electrically connected and the first electrode 604 with a first contact pad 612 ,

The organic constituents of organic components, for example organic optoelectronic components, for example an organic light emitting diode (OLED), are often susceptible to harmful environmental influences. A harmful environmental influence can be, for example, a substance harmful to organic substances or organic substance mixtures, for example oxygen and / or, for example, a solvent, for example water. The hermetic shielding of organic optoelectronic surface light sources is important to ensure a shelf life of, for example, 10 years, or a lifetime in operation, for example, of more than 10,000 hours for the optoelectronic surface light sources. To protect against harmful environmental influences, a component can be surrounded by a hermetically sealed encapsulation, for example a thin-film encapsulation, barrier thin layer, barrier layer, encapsulation layer, barrier film, an intrinsically hermetically sealed substance or mixture of substances or the like. The encapsulation requires permeability values for water and / or oxygen of less than 10 ^-6 g / cm / d. Organic optoelectronic components are therefore conventionally encapsulated for protection against water and / or oxygen, ie hermetically shielded with respect to water and / or oxygen. The areas to be protected can span a very large area. Conventionally, to achieve these values, a laminar lamination ( 7a ) or a cavity glass encapsulation ( 7b ) used.

7a , b show schematic representations of a conventional encapsulation of an organic optoelectronic component.

7a shows a conventional method for encapsulating an optoelectronic device 600 , On the second electrode 608 an optoelectronic component 600 (please refer 6 ) becomes a barrier thin film 700 formed such that the second electrode 608 , the electrical insulations 610 and the organic functional layer structure 606 from the barrier thin film 616 is surrounded. Continue on a cover 704 an adhesive layer 706 applied. The cover 704 is for example a laminating glass 704 or a slide 704 and the adhesive is an epoxy adhesive. The cover 704 with adhesive layer 706 is then on the barrier thin film 702 applied (shown in 7a ). This results in an encapsulated optoelectronic device having a conventional encapsulation structure 706 with barrier thin film 700 and laminated cover 702 educated.

7b shows another conventional method for encapsulating an optoelectronic device 600 , On a cover 704 becomes a moisture-binding getter 710 applied and in the edge region of the cover 702 a lateral adhesive layer 708 applied. The cover 704 with lateral adhesive layer 708 and getters 710 is then on the optoelectronic device 600 applied, for example on the contact pads 612 . 614 (shown in 7b ). This is a conventional Kavitätsglasverkapselung 712 educated.

However, moisture and / or air (oxygen) can pass through the encapsulation structure to the optoelectronic component due to an epoxy adhesive and / or its boundary surfaces 600 diffuse. Furthermore, the areas to be protected in a surface light source are very large, so that thereby an increased particle sensitivity is present (shown in FIG 8a . 8b ). An optoelectronic component 600 with a conventional encapsulation structure 706 with barrier thin film 702 and cover 704 ; and an optoelectronic device 600 with a cavity glass encapsulation 712 may be susceptible to errors, for example, with regard to the adhesive, particle contamination and / or visual properties. When a pressure 804 or a curvature 806 on the cover 704 acts, for example, a protective glass 704 or a lamination glass 704 ; can be a particle contamination 802 pressed into the organic functional layers of the OLED. This can lead to a short circuit and / or create latent heat spots. Heat spots could result in spontaneous failure as a late consequence. Mechanically flexible components may have a higher susceptibility to error due to the possibility of curvature.

Conventionally, attempts are being made to reduce the number of particle contaminations in the optoelectronic components by producing the optoelectronic components under particle-poor conditions or by testing and sorting out particle-contaminated optoelectronic components in a complex process. This, however, the cost-benefit ratio is deteriorated in the manufacture of large-area optoelectronic devices.

In a conventional encapsulation structure 706 with barrier film and laminated cover 702 has the adhesive layer 704 Conventional has a thickness in a range of 10 .mu.m to 100 .mu.m. The adhesive layer 704 However, conventionally, it does not have a homogeneous thickness, but has a nonuniformity. By means of this non-uniformity of the adhesive layer 704 can be on the side of the cover of the adhesive layer 704 Interference fringes arise. These interference fringes can be used with transparent optoelectronic components 600 be disturbing with regard to the visual appearance.

In various embodiments, an optoelectronic component and a method for producing an optoelectronic component are provided with which it is possible to increase the mechanical stability of encapsulated optoelectronic components.

In various embodiments, an optoelectronic component is provided, the optoelectronic component having: an electrically active region having an optically active region and an optically inactive region; wherein the electrically active region comprises at least one electrical bus bar formed in the optically active region; an encapsulation structure on or above the electrically active region; wherein the encapsulation structure has a support structure on or above the electrical bus bar in the optically active region.

In one embodiment, the optoelectronic component can be designed as an organic light-emitting diode.

In one embodiment, the optoelectronic component may be formed as an organic solar cell.

In one embodiment, the electrically active region may have an electrically functional structure, wherein the electrically functional structure has an organic functional layer structure between a first electrode and a second electrode.

In one embodiment, the organic functional layer structure may be configured to emit electromagnetic radiation from a supplied electrical energy and / or to generate an electrical energy from an absorbed electromagnetic radiation.

In one embodiment, the organic functional layer structure may be at least partially formed in the optically active region.

In one embodiment, the electrical busbar may be electrically coupled to the first electrode or to the second electrode.

In one configuration, the optoelectronic component may further include a first contact pad and a second contact pad, wherein the first contact pad may be electrically coupled to the first electrode and the second contact pad may be electrically coupled to the second electrode.

In one embodiment, the first electrode, the second electrode, the electrical busbar, the first contact pad and / or the second contact pad may be at least partially formed in the optically inactive region.

In one embodiment, the electrical busbar may be formed in the optically active region such that the electrical Busbar is at least partially formed on or over a part of the organic functional layer structure and / or wherein at least a part of the organic functional layer structure is formed on or above the electrical busbar.

In one embodiment, the optoelectronic component may have a first electrical busbar and at least one second electrical busbar, wherein the first electrical busbar is electrically coupled to the first electrode and the at least one second electrical busbar is electrically coupled to the second electrode.

In one embodiment, the support structure may be formed as a second busbar.

In one embodiment, the encapsulation structure may have a cover.

In one embodiment, the cover may be hermetically sealed with respect to water and / or oxygen.

In one embodiment, the cover may be formed as a film.

In one embodiment, the cover may be configured as a glass cover, metal cover or plastic cover.

In one embodiment, the encapsulation structure may be formed as a thin layer or have a thin layer that is hermetically sealed with respect to water and / or oxygen.

In one embodiment, the encapsulation structure can be at least the areal dimension of the optically active. Have area.

In one embodiment, the cover can be conclusive with the electrically functional. Structure be connected, for example, cohesively.

In one embodiment, the connection of the cover to the electrically functional structure may be hermetically sealed with respect to water and / or oxygen.

In one embodiment, the cover may be connected to the electrically functional structure at least partially in the optically inactive region.

In one embodiment, at least one support structure may comprise a substance or mixture of substances which is hermetically sealed with respect to water and / or oxygen.

In one embodiment, at least one support structure may comprise or be formed from one of the following materials: a metal, a metal oxide, a ceramic, a plastic.

In one embodiment, at least one support structure may comprise or be formed from a eutectic substance.

In one embodiment, at least one support structure may comprise or be formed from one or more of the following materials: gallium, indium, tin, chromium, molybdenum, gold, silver and / or aluminum.

In one embodiment, at least one support structure may comprise an adhesive, a plastic and / or a lacquer, for example a resin, an epoxide, a polyacrylate.

In one embodiment, the optoelectronic component may have a first support structure and at least one second support structure.

In one embodiment, the cover can be connected to the electrically functional structure by means of a second support structure and / or a third support structure.

In one embodiment, the cover may be connected to the electrically functional structure by means of a further support structure such that at least one cavity is formed between the cover and the electrically functional structure with the first support structure and the further support structure.

In one embodiment, the first support structure and the at least one second support structure may be formed such that the distance of the cover to the electrically functional structure is greater than the thickness of the electrically functional structure.

In one embodiment, the cavity may at least partially comprise or be filled with a gas or gas mixture.

In one embodiment, the support structure may be formed on the cover in the cavity and / or on the electrically active structure.

In one embodiment, the support structure may mechanically connect the support structure to the cover and the electrically functional structure.

In one embodiment, the support structure may be formed as a conclusive connection of the electrically functional structure with the cover, for example, as a material connection.

In one embodiment, at least one functional layer may be formed on the cover in the cavity.

In one embodiment, the functional layer may include or be formed from a getter.

In one embodiment, the getter may comprise or be formed from a zeolite.

In one embodiment, the functional layer may comprise scattering centers for electromagnetic radiation which is emitted or absorbed by the optoelectronic component.

In one embodiment, the scattering centers may be formed as microlenses.

In one embodiment, the functional layer may be formed as a barrier thin film.

In one embodiment, the functional layer may be formed as an anti-adhesion layer with respect to water.

In one embodiment, the functional layer may be formed as an anti-adhesion layer with respect to a substance or substance mixture of the at least one support structure.

In one embodiment, the functional layer may be formed as a coupling-in layer or a coupling-out layer with respect to electromagnetic radiation which is emitted or absorbed by the optoelectronic component.

In one embodiment, the functional layer may be formed as a UV protective layer.

In one embodiment, the substance or the substance mixture of the functional layer may be elastic or viscoelastic.

In one embodiment, the functional layer may have a higher compression modulus than the organic functional layer structure.

In one embodiment, the functional layer may have a higher compression modulus than the electrically functional structure.

In one embodiment, the functional layer may have a layer thickness which is smaller than the distance of the cover from the electrically functional structure.

In one embodiment, the encapsulation structure may be formed as a barrier thin film and / or an ALD layer or MLD layer or have such.

In one embodiment, the encapsulation structure may be formed as a cavity encapsulation.

In one embodiment, the support structure may have a width that is similar to the width of the electrical busbar.

In one embodiment, the support structure may be approximately congruent on or over the electrical busbar.

In one embodiment, the support structure may be formed at least partially surrounded by the organic functional layer structure.

In one embodiment, at least one support structure may be at least partially electrically coupled to at least one electrical busbar and / or mechanically connected.

In one embodiment, at least one second support structure may be formed adjacent to the first support structure.

In one embodiment, at least one second support structure may be formed over the first support structure.

In one embodiment, at least one second support structure may be electrically and / or mechanically coupled to the first support structure.

In one embodiment, at least one second support structure may be formed electrically insulated from the first support structure.

In various embodiments, there is provided a method of fabricating an optoelectronic device, the method comprising: forming an electrically active region comprising an optically active region and an optically inactive region; wherein the electrically active region is formed to have at least one electrical busbar, the busbar being formed in the optically active region; Forming an encapsulation structure on or over the electrically active region; wherein the encapsulation structure is formed with a support structure on or above the electrical bus bar in the optically active region.

In one embodiment of the method, the optoelectronic component can be formed as an organic light-emitting diode.

In one embodiment of the method, the optoelectronic component can be formed as an organic solar cell.

In one configuration of the method, forming the electrically active region may include forming an electrically functional structure, wherein the electrically functional structure has an organic functional layer structure between a first electrode and a second electrode.

In one embodiment of the method, the organic functional layer structure may be formed for emitting electromagnetic radiation from a supplied electrical energy and / or for generating an electrical energy from an absorbed electromagnetic radiation.

In one embodiment of the method, the organic functional layer structure can be formed at least partially in the optically active region.

In one embodiment of the method, the electrical busbar can be formed electrically coupled to the first electrode or to the second electrode.

In one embodiment of the method, the method may further include forming a first contact pad and a second contact pad, wherein the first contact pad with the first electrode and the second contact pad with the second electrode are formed electrically coupled.

In one configuration of the method, the first electrode, the second electrode, the electrical busbar, the first contact pad and / or the second contact pad may be formed at least partially in the optically inactive region.

In one embodiment of the method, the electrical busbar can be formed in the optically active region such that the electrical busbar is at least partially formed on or over part of the organic functional layer structure and / or at least part of the organic functional layer structure on or above the electrical busbar is formed.

In one embodiment of the method, the method may further comprise forming a first electrical busbar and at least one second electrical busbar.

In one embodiment of the method, the first electrical busbar can be formed electrically coupled to the first electrode and the at least one second electrical busbar to the second electrode.

In one embodiment of the method, the support structure may be formed as a second busbar.

In one configuration of the method, the formation of the encapsulation structure may include forming or applying a cover or may include applying a cover on or above the electrical functional structure.

In one embodiment of the method, the cover can be formed hermetically sealed with respect to water and / or oxygen.

In one embodiment of the method, the cover can be formed as a film or be set up.

In one embodiment of the method, the cover may be configured as a glass cover, metal cover or plastic cover.

In one embodiment of the method, the encapsulation structure may be formed as a thin layer or may comprise a thin layer, wherein the thin layer is hermetically sealed with respect to water and / or oxygen.

In one embodiment of the method, the encapsulation structure can be formed having at least the areal dimension of the optically active region.

In one embodiment of the method, the cover can be connected conclusively to the electrically functional structure, for example by material bonding.

In one embodiment of the method, the connection of the cover to the electrically functional structure can be hermetically sealed with respect to water and / or oxygen.

In one embodiment of the method, the cover can be connected to the electrically functional structure at least partially in the optically inactive region conclusive.

In one embodiment of the method, at least one support structure may comprise a substance or a substance mixture which is hermetically sealed with respect to water and / or oxygen.

In one embodiment of the method, at least one support structure may be one of the following Comprise or be formed from substances: a metal, a metal oxide, a ceramic, a plastic.

In one embodiment of the method, at least one support structure may comprise or be formed from a eutectic substance.

In one embodiment of the method, at least one support structure may comprise or be formed from one or more of the following materials: gallium, indium, tin, chromium, molybdenum, gold, silver and / or aluminum.

In one embodiment of the method, at least one support structure may comprise or be formed from an adhesive, a plastic and / or a lacquer, for example a resin, an epoxide, a polyacrylate.

In one embodiment of the method, the cover can be connected conclusively to the electrically functional structure by means of a second support structure and / or a third support structure.

In one embodiment of the method, the cover can be connected to the electrically functional structure by means of a further support structure such that at least one cavity is formed between the cover and the electrically functional structure with the first support structure and the further support structure.

In one embodiment of the method, the first support structure and the at least one second support structure may be formed such that the distance of the cover from the electrically functional structure is greater than the thickness of the electrically functional structure.

In one embodiment of the method, the cavity can be at least partially filled with a gas or gas mixture.

In one embodiment of the method, the support structure may be formed on the cover in the cavity and / or on the electrically active structure.

In one embodiment of the method, the support structure may mechanically connect the support structure to the cover and the electrically functional structure.

In one embodiment of the method, the support structure may be formed as a conclusive connection of the electrically functional structure with the cover, for example as a material connection.

In one embodiment of the method, at least one functional layer can be formed on the cover in the cavity.

In one embodiment of the method, the functional layer can have a getter or be formed therefrom.

In one embodiment of the method, the getter may comprise or be formed from a zeolite.

In one embodiment of the method, the functional layer can be formed such that the functional layer has scattering centers for electromagnetic radiation, wherein the electromagnetic radiation is emitted or absorbed by the optoelectronic component.

In one embodiment of the method, the scattering centers can be formed as microlenses.

In one embodiment of the method, the functional layer may be formed as a barrier thin film.

In one embodiment of the method, the functional layer may be formed as an anti-adhesion layer with respect to water.

In one embodiment of the method, the functional layer may be formed as an anti-adhesion layer with respect to a substance or mixture of substances of the at least one support structure.

In one embodiment of the method, the functional layer can be formed as a coupling-in layer or a coupling-out layer with regard to electromagnetic radiation which is emitted or absorbed by the optoelectronic component.

In one embodiment of the method, the functional layer can be formed as a UV protective layer.

In one embodiment of the method, the substance or the substance mixture of the functional layer can be formed elastically or viscoelastically.

In one embodiment of the method, the functional layer may be formed such that the functional layer has a higher compression modulus than the organic functional layer structure.

In one embodiment of the method, the functional layer can be formed in such a way that in that the functional layer has a layer thickness which is smaller than the distance of the cover from the electrically functional structure.

In one embodiment of the method, encapsulation structure can be formed as a barrier thin layer and / or an ALD layer or MLD layer or have such a.

In one embodiment of the method, the encapsulation structure can be formed as a cavity encapsulation.

In one embodiment of the method, the support structure may have a width which is similar to the width of the electrical busbar.

In one embodiment of the method, the support structure may be approximately congruently formed on or above the electrical busbar.

In one embodiment of the method, the support structure may be formed such that the support structure is at least partially surrounded by the organic functional layer structure.

In one embodiment of the method, at least one support structure may be at least partially electrically coupled to at least one electrical busbar and / or mechanically connected.

In one embodiment of the method, the method may include forming a first support structure and at least one second support structure.

In one embodiment of the method, at least one second support structure may be formed adjacent to the first support structure.

In one embodiment of the method, at least one second support structure may be formed over the first support structure.

In one embodiment of the method, at least one second support structure can be formed electrically and / or mechanically coupled to the first support structure.

In one embodiment of the method, at least one second support structure may be formed electrically insulated from the first support structure.

Embodiments of the invention are illustrated in the figures and are explained in more detail below.

Show it

1a D schematic cross-sectional views of optoelectronic devices according to various embodiments;

2a B schematic cross-sectional views of optoelectronic components in the method for producing an optoelectronic component, according to various embodiments;

3a B schematic cross-sectional views of optoelectronic components in the method for producing an optoelectronic component, according to various embodiments;

4a D schematic cross-sectional views of optoelectronic devices, according to various embodiments;

5a C schematic cross-sectional views of optoelectronic devices, according to various embodiments;

6 schematic cross-sectional views of a conventional optoelectronic device;

7a FIG. 2 b shows schematic cross-sectional views of a conventional optoelectronic component; FIG. and

8a -B are schematic cross-sectional views of a conventional optoelectronic device.

In the following detailed description, reference is made to the accompanying drawings, which form a part hereof, and in which is shown by way of illustration specific embodiments in which the invention may be practiced. In this regard, directional terminology such as "top", "bottom", "front", "back", "front", "rear", etc. is used with reference to the orientation of the described figure (s). Because components of embodiments can be positioned in a number of different orientations, the directional terminology is illustrative and is in no way limiting. It should be understood that other embodiments may be utilized and structural or logical changes may be made without departing from the scope of the present invention. It should be understood that the features of the various exemplary embodiments described herein may be combined with each other unless specifically stated otherwise. The following detailed description is therefore not to be construed in a limiting sense, and the scope of the present invention is defined by the appended claims.

As used herein, the terms "connected," "connected," and "coupled" are used to describe both direct and indirect connection, direct or indirect connection, and direct or indirect coupling. In the figures, identical or similar elements are provided with identical reference numerals, as appropriate.

In the context of this description, an optoelectronic component can be understood to mean an embodiment of an electronic component, the optoelectronic component having an optically active region. The optically active region can absorb electromagnetic radiation and form a photocurrent therefrom or emit electromagnetic radiation by means of an applied voltage to the optically active region.

In various embodiments, an optoelectronic component may be formed as an organic light emitting diode (OLED), an organic photovoltaic system, for example an organic solar cell, an organic sensor, an organic field effect transistor (OFET) and / or organic electronics be. The organic field effect transistor may be an all-OFET in which all layers are organic. An organic, electronic component may have an organic functional layer system, which is synonymously also referred to as an organic functional layer structure. The organic functional layer structure may include or may be formed from an organic substance or mixture of organic substances, for example, configured to provide electromagnetic radiation from a provided electrical current or to provide an electrical current from a provided electromagnetic radiation. The radiation may, for example, be light in the visible range, UV light and / or infrared light. In this context, the electromagnetic radiation emitting device may be formed, for example, as a light emitting diode (LED) as an organic light emitting diode (OLED), as a light emitting transistor or as an organic light emitting transistor. The light emitting device may be part of an integrated circuit in various embodiments. Furthermore, a plurality of light-emitting components may be provided, for example housed in a common housing.

In the context of this description, an organic substance can be understood as meaning a compound of the carbon characterized by characteristic physical and chemical properties, regardless of the particular state of matter, in chemically uniform form. Furthermore, in the context of this description, an inorganic substance can be understood as meaning a compound without carbon or a simple carbon compound, characterized by characteristic physical and chemical properties, regardless of the particular state of matter, in chemically uniform form. In the context of this description, an organic-inorganic substance (hybrid substance) can be understood as meaning a compound present in chemically uniform form, characterized by characteristic physical and chemical properties, regardless of the respective state of matter, with compounds which contain carbon and are free of carbon. In the context of this description, the term "substance" encompasses all substances mentioned above, for example an organic substance, an inorganic substance, and / or a hybrid substance. Furthermore, in the context of this description, a substance mixture can be understood to mean something which consists of constituents of two or more different substances whose constituents are, for example, distributed very finely. A substance class means a substance or mixture of one or more organic substances, one or more inorganic substances or one or more hybrid substances. The term "material" can be used synonymously with the term "substance".

In various embodiments, an adhesive may include or be formed from one of the following: a casein, a glutin, a starch, a cellulose, a resin, a tannin, a lignin, an organic with oxygen, nitrogen, chlorine, and / or sulfur ; a metal oxide, a silicate, a phosphate, a borate.

In various embodiments, an adhesive may be used as a hot melt adhesive, for example, a solvent-borne wet adhesive, a contact adhesive, a dispersion adhesive, a water-based adhesive, a plastisol; a polymerization adhesive, for example, a cyanoacrylate adhesive, a methyl methacrylate adhesive, an anaerobic curing adhesive, an unsaturated polyester, a radiation curing adhesive; a polycondensation adhesive, for example, a phenol-formaldehyde resin adhesive, a silicone, a silane-crosslinking polymer adhesive, a polyimide adhesive, a polysulfide adhesive; and / or a polyaddition adhesive, for example an epoxy adhesive, a polyurethane adhesive, a silicone, a pressure-sensitive adhesive; have or be formed from it.

1a FIG. 2 d show schematic cross-sectional views of optoelectronic components according to various exemplary embodiments. FIG.

Shown are schematic cross-sectional views of an optoelectronic component according to one of the descriptions of 1 to 5 ,

The optoelectronic component 140 . 160 can be set up for receiving and / or providing electromagnetic radiation, wherein the optoelectronic component 140 . 160 is set up to generate an electrical energy from a recorded electromagnetic radiation and / or to generate electromagnetic radiation from a provided electrical energy.

In one embodiment, the optoelectronic device may be used as a light emitting device 140 . 160 , For example, in the form of an organic light emitting diode 140 . 160 be educated.

In various embodiments, the organic light emitting diode 140 . 160 (or the light-emitting devices according to the embodiments described above or in the following) be configured as a so-called top emitter and bottom emitter, for example, a transparent top emitter or a transparent bottom emitter. A top and / or bottom emitter can also be used as an optically transparent or translucent component, for example a transparent or translucent organic light-emitting diode 140 . 160 be designated.

In various embodiments, the optoelectronic component 140 . 160 on or over a carrier 102 be educated.

The carrier 102 For example, it can serve as a support element for electronic elements or layers, for example light-emitting elements. For example, the carrier 102 Glass, quartz, and / or a semiconductor material or any other suitable substance or be formed therefrom. Furthermore, the carrier can 102 comprise or be formed from a plastic film or a laminate with one or more plastic films. The plastic may include or be formed from one or more polyolefins (eg, high or low density polyethylene or PE) or polypropylene (PP). Further, the plastic may include or be formed from polyvinyl chloride (PVC), polystyrene (PS), polyester and / or polycarbonate (PC), polyethylene terephthalate (PET), polyethersulfone (PES) and / or polyethylene naphthalate (PEN). The carrier 102 may comprise one or more of the above substances.

The carrier 102 may comprise or be formed from a metal, for example copper, silver, gold, platinum, iron, for example a metal compound, for example steel.

A carrier 102 Having a metal or a metal compound may also be formed as a metal foil or a metal-coated foil.

The carrier 102 can be translucent or even transparent. With a carrier 102 comprising a metal, the metal may be formed, for example, as a thin layer of transparent or translucent layer, and / or the metal may be part of a mirror structure.

The carrier 102 may have a mechanically rigid region and / or a mechanically flexible region or be formed. A carrier 102 For example, the mechanical rigid portion and a mechanically flexible portion may be structured, for example, by making the rigid portion and the flexible portion have different thicknesses.

A mechanically flexible carrier 102 or the mechanically flexible region may, for example, be formed as a foil, for example a plastic foil, metal foil or a thin glass.

In one embodiment, the carrier may 102 as a waveguide for electromagnetic radiation of the optoelectronic component 140 . 160 be formed, for example, be transparent or translucent with respect to the provided electromagnetic radiation of the optoelectronic component 140 . 160 ,

On or above the vehicle 102 In various embodiments, a barrier layer may optionally be arranged (not shown), for example on the side of the organic functional layer structure 106 and / or on the side, the organic functional layer structure 106 turned away.

The barrier layer may comprise or consist of one or more of the following: aluminum oxide, zinc oxide, zirconium oxide, titanium oxide, hafnium oxide, tantalum oxide lanthanum oxide, silicon oxide, silicon nitride, silicon oxynitride, indium tin oxide, indium zinc oxide, aluminum doped zinc oxide, poly (p-phenylene terephthalamide), Nylon 66, as well as mixtures and alloys thereof. In various embodiments, the barrier layer can be formed by means of an atomic layer deposition method (ALD) and / or a molecular layer deposition method (MLD). In various embodiments, the barrier layer may be two or more identical and / or different layers, or have layers, for example, side by side and / or one above the other, for example, as a barrier layer structure or a barrier stack, for example, structured. Further, in various embodiments, the barrier layer may have a layer thickness in a range of about 0.1 nm (one atomic layer) to about 1000 nm, for example, a layer thickness in a range of about 10 nm to about 200 nm, for example, a layer thickness of about 40 nm ,

In various embodiments, a further cover (not shown) may be provided on or above the barrier layer and / or the barrier layer may be formed as a further cover, for example as a cavity glass encapsulation.

In various embodiments, on or above the barrier layer (or, if the barrier layer is not present (shown), on or above the support 102 ) the first electrode 104 (For example in the form of a first electrode layer 104 ) be applied.

The first electrode 104 (hereinafter also referred to as lower electrode 104 may be formed of an electrically conductive substance or be, such as a metal or a conductive transparent oxide (TCO) or a stack of layers of the same metal or different metals and / or the same TCO or different TCOs. Transparent conductive oxides are transparent, conductive substances, for example metal oxides, such as, for example, zinc oxide, tin oxide, cadmium oxide, titanium oxide, indium oxide, or indium tin oxide (ITO). In addition to binary metal oxygen compounds such as ZnO, SnO ₂ , or In ₂ O _{3 also} include ternary metal oxygen compounds such as AlZnO, Zn ₂ SnO ₄ , CdSnO ₃ , ZnSnO ₃ , MgIn ₂ O ₄ , GaInO ₃ , Zn ₂ In ₂ O ₅ or In ₄ Sn ₃ O ₁₂ or mixtures of different transparent conductive oxides to the group of TCOs and can be used in various embodiments. Furthermore, the TCOs do not necessarily correspond to a stoichiometric composition and may also be p-doped or n-doped.

In various embodiments, the first electrode 104 have a metal; For example, Ag, Pt, Au, Mg, Al, Ba, In, Cr, Mo, Ca, Sm or Li, as well as compounds, combinations or alloys of these substances.

In various embodiments, the first electrode 104 are formed by a stack of layers of a combination of a layer of a metal on a layer of a TCO, or vice versa. An example is a silver layer deposited on an indium tin oxide (ITO) layer (Ag on ITO) or ITO-Ag-ITO multilayers.

In various embodiments, the first electrode 104 have one or more of the following substances as an alternative or in addition to the above-mentioned substances: networks of metallic nanowires and particles, for example of Ag; Networks of carbon nanotubes; Graphene particles and layers; Networks of semiconducting nanowires.

Furthermore, the first electrode 104 having electrically conductive polymers or transition metal oxides or electrically conductive transparent oxides.

In various embodiments, the first electrode 104 and the carrier 102 be formed translucent or transparent. In the case that the first electrode 104 comprises or is formed of a metal, the first electrode 104 For example, have a layer thickness of less than or equal to about 25 nm, for example, a layer thickness of less than or equal to about 20 nm, for example, a layer thickness of less than or equal to about 18 nm 104 For example, have a layer thickness of greater than or equal to about 10 nm, for example, a layer thickness of greater than or equal to about 15 nm. In various embodiments, the first electrode 104 a layer thickness in a range of about 10 nm to about 25 nm, for example, a layer thickness in a range of about 10 nm to about 18 nm, for example, a layer thickness in a range of about 15 nm to about 18 nm.

Furthermore, in the event that the first electrode 104 has a conductive transparent oxide (TCO) or is formed therefrom, the first electrode 104 For example, have a layer thickness in a range of about 10 nm to about 100 nm, for example a layer thickness in a range of about 75 nm to about 250 nm, for example, a layer thickness in a range of about 100 nm to about 150 nm.

Furthermore, in the event that the first electrode 104 For example, from a network of metallic nanowires, such as Ag, which may be combined with conductive polymers, a network of carbon nanotubes that may be combined with conductive polymers, or formed from graphene layers and composites, the first electrode 104 For example, a layer thickness in a range of about 1 nm to about 100 nm, for example, a layer thickness in a range of about 10 nm to about 400 nm, for example, a layer thickness in a range of about 40 nm to about 250 nm.

The first electrode 104 may be formed as an anode, that is, as a hole-injecting electrode or as a cathode, that is, as an electron-injecting electrode.

On or above the first electrode 104 is an organic functional layered structure 106 shown.

The organic functional layer structure 106 may comprise one or more emitter layers (not shown), for example with fluorescent and / or phosphorescent emitters, and one or more hole line layers (also referred to as hole transport layer (s)) (not shown). In various embodiments, alternatively or additionally, one or more electron conductive layers (also referred to as electron transport layer (s)) may be provided (not shown).

Examples of emitter materials used in the optoelectronic device 140 . 160 According to various embodiments, for the emitter layer (s) can be used include organic or organometallic compounds, such as derivatives of polyfluorene, polythiophene and polyphenylene (eg 2- or 2,5-substituted poly-p-phenylenevinylene) and metal complexes, for example Iridium complexes such as blue phosphorescent FIrPic (bis (3,5-difluoro-2- (2-pyridyl) phenyl- (2-carboxypyridyl) iridium III), green phosphorescing Ir (ppy) ₃ (tris (2-phenylpyridine) iridium III), red phosphorescent Ru (dtb-bpy) ₃ · 2 (PF ₆ ) (tris [4,4'-di-tert-butyl- (2,2 ') -bipyridine] ruthenium (III) complex) and blue fluorescent DPAVBi (4,4-bis [4- (di-p-tolylamino) styryl] biphenyl), green fluorescent TTPA (9,10-bis [N, N-di (p-tolyl) amino] anthracene) and red fluorescent DCM2 (4-dicyanomethylene) -2-methyl-6-glololidyl-9-enyl-4H-pyran) as a non-polymeric emitter. Such non-polymeric emitters are, for example, depositable by means of thermal evaporation, an atomic layer deposition method and / or a molecule layer deposition method. Furthermore, it is possible to use polymer emitters which can be deposited in particular by means of a wet-chemical method, for example a spin-coating method (also referred to as spin coating).

The emitter materials may be suitably embedded in a matrix material.

It should be noted that other suitable emitter materials are also provided in other embodiments.

The emitter materials of the emitter layer (s) of the optoelectronic component 140 . 160 For example, they may be selected such that the optoelectronic component 140 . 160 White light emitted. The emitter layer (s) may comprise a plurality of emitter materials emitting different colors (for example blue and yellow or blue, green and red), alternatively the emitter layer (s) may also be composed of several sublayers, such as a blue fluorescent emitter layer or blue phosphorescent emitter layer, a green phosphorescent emitter layer and a red phosphorescent emitter layer. By mixing the different colors, the emission of light can result in a white color impression. Alternatively, it can also be provided to arrange a converter material in the beam path of the primary emission generated by these layers, which at least partially absorbs the primary radiation and emits secondary radiation of a different wavelength, so that from a (not yet white) primary radiation by the combination of primary radiation and secondary Radiation produces a white color impression.

The organic functional layer structure 106 may generally comprise one or more electroluminescent layers. The one or more electroluminescent layers may or may comprise organic polymers, organic oligomers, organic monomers, organic small non-polymeric molecules ("small molecules"), or a combination of these substances. For example, the organic functional layer structure 106 have one or more electroluminescent layers, which is or are designed as a hole transport layer, so that, for example, in the case of an OLED, an effective hole injection into an electroluminescent layer or an electroluminescent region is made possible. Alternatively, in various embodiments, the organic functional layer structure 106 have one or more functional layers, which is or are designed as an electron transport layer, so that, for example, in an OLED effective electron injection into an electroluminescent layer or an electroluminescent region is made possible. As a material for the hole transport layer, for example, tertiary amines, Carbazoderivate, conductive polyaniline or Polythylendioxythiophen can be used. In various embodiments, the one or more electroluminescent layers may be embodied as an electroluminescent layer.

In various embodiments, the hole transport layer may be on or over the first electrode 104 be deposited, for example, deposited, and the emitter layer may be applied to or over the hole transport layer, for example, be deposited. In various embodiments, the electron transport layer may be deposited on or over the emitter layer, for example, deposited.

In various embodiments, the organic functional layer structure 106 (Thus, for example, the sum of the thicknesses of hole transport layer (s) and emitter layer (s) and electron transport layer (s)) have a layer thickness of about 1.5 microns, for example, a maximum thickness of about 1.2 microns, for example, a maximum layer thickness approximately 1 μm, for example a layer thickness of at most approximately 800 nm, for example a layer thickness of at most approximately 100 nm, for example a layer thickness of approximately approximately 400 nm, for example a layer thickness of approximately approximately 300 nm.

In various embodiments, the organic functional layer structure 106 For example, a stack of a plurality of directly superimposed organic light-emitting diode units (OLED unit), each OLED unit, for example, may have a layer thickness of about 1.5 microns, for example, a maximum thickness of about 1.2 microns, for example one Layer thickness of a maximum of about 1 micron, for example, a layer thickness of about 800 nm, for example, a layer thickness of about 100 nm, for example, a layer thickness of about 400 nm, for example, a layer thickness of about 300 nm. In various embodiments, the organic functional layer structure 106 For example, have a stack of two, three or four directly superimposed OLED units, in which case, for example, organic functional layer structure 106 may have a layer thickness of at most about 3 microns.

The optoelectronic component 140 . 160 Optionally, it may optionally include organic functional layer structures, for example, disposed on or over the one or more emitter layers, or on or above the electron transport layer (s) serving to enhance the functionality and hence the efficiency of the optoelectronic device 140 . 160 continue to improve. The further organic functional layer structures may, for example, be separated from one another by means of a charge-generating pair (CGL) layer structure.

On or above the organic functional layer structure 106 or optionally on or over the one or more further organic functional layer structures, the second electrode 108 (For example in the form of a second electrode layer 108 ) be applied.

The second electrode 108 is by means of an electrical insulation 110 from the first electrode 104 electrically isolated.

In various embodiments, the second electrode 108 have the same substances or be formed from it as the first electrode 104 , wherein in various embodiments, metals are particularly suitable.

In various embodiments, the second electrode 108 (For example, in the case of a metallic second electrode 108 ), for example, a layer thickness of less than or equal to about 150 nm, for example, a layer thickness of less than or equal to about 100 nm, for example, a layer thickness of less than or equal to about 10 nm, for example, a layer thickness of less than or equal to about 45 nm, for example, a layer thickness of less than or equal to about 40 nm, for example, a layer thickness of less than or equal to about 35 nm, for example, a layer thickness of less than or equal to about 30 nm, for example, a layer thickness of less than or equal to about 25 nm For example, a layer thickness of less than or equal to about 20 nm, for example, a layer thickness of less than or equal to about 15 nm, for example, a layer thickness of less than or equal to about 10 nm.

The second electrode 108 may generally be formed or be similar to the first electrode 104 , or different from this. The second electrode 108 may be formed in various embodiments of one or more of the substances and with the respective layer thickness or be, as above in connection with the first electrode 104 described. In various embodiments, the first electrode 104 and the second electrode 108 both translucent or transparent.

The second electrode 108 may be formed as an anode, that is, as a hole-injecting electrode or as a cathode, that is, as an electron-injecting electrode.

The second electrode 108 can with a second contact pad 114 be electrically connected, to which a second electrical potential (which is different from the first electrical Potential) provided by the power source can be applied. For example, the second electrical potential may have a value such that the difference from the first electrical potential has a value in a range of about 1.5V to about 20V, for example, a value in a range of about 2.5V to about For example, 15V has a value in a range of about 3V to about 12V. A contact pad 112 . 114 may be electrically and / or physically connected to an electrode 104 . 108 , A contact pad 112 . 114 However, it can also be considered as an area of an electrode 104 . 106 or a connection layer.

The first electrode 104 can with a first electrical contact pad 112 be electrically connected, to which a first electrical potential can be applied - provided by a power source (not shown), for example, a power source or a voltage source. The first contact pad 112 may be in the geometric edge region of the optically active region 132 the OLED 140 . 160 on or above the vehicle 102 be formed, for example, laterally adjacent to the first electrode 104 , Alternatively, the first electrical potential to the carrier 102 be created or be and then then indirectly to the first electrode 104 be created or be. The first electrical potential may be, for example, the ground potential or another predetermined reference potential.

In various embodiments, the second electrode 108 with a second contact pad 114 be physically and electrically connected.

The first contact pad 112 is by means of electrical insulation 110 electrically from the second electrode 108 isolated. In other words: the electrical insulation 110 may be arranged such that a current flow between two electrically conductive regions, for example between the first electrode 104 and the second electrode 108 is prevented. The substance or the substance mixture of the electrical insulation can be, for example, a coating or a coating agent, for example a polymer and / or a lacquer. The lacquer may, for example, have a coating material which can be applied in liquid or in powder form, for example comprising or being formed from a polyimide. The electrical insulations 110 For example, they may be applied or formed lithographically or by means of a printing process, for example structured. The printing method may include, for example, inkjet printing (inkjet printing), screen printing and / or pad printing (pad printing).

In one embodiment, electrical isolation 110 be optional, for example when forming the optoelectronic device 140 . 160 with a suitable mask process.

The contact pads 112 . 114 may as a substance or mixture of substances, a substance or a mixture of substances similar to the first electrode 104 and / or the second electrode 108 or formed therefrom, for example as a metal layer structure having at least one chromium layer and at least one aluminum layer, for example chromium-aluminum-chromium (Cr-Al-Cr); or molybdenum-aluminum-molybdenum (Mo-Al-Mo), silver-magnesium (Ag-Mg), aluminum.

The contact pads 112 . 114 For example, they may include or may be formed such as a contact pad, a pin, a flexible printed circuit board, a clip, a clip, or other electrical connection means.

The electrical functional structure 130 . 150 (shown in 1a and 1c ) may be approximately as the area of the optoelectronic device 140 . 160 be understood, in which an electric current for operation of the optoelectronic component 140 . 160 flows. In various embodiments, the electrically functional structure may be the first electrode 104 , the second electrode 108 and the organic functional layer structure 106 exhibit.

In various embodiments, the optoelectronic component may have an optically active region 132 exhibit. Approximately the range of the optoelectronic component 140 . 160 with organic functional layer structure 106 on or above the vehicle 102 can act as an optically active area 132 be designated.

Approximately the range of the optoelectronic component 140 . 160 without organic functional layer structure 106 on or above the vehicle 102 can be considered optically inactive area 134 be designated. The optically inactive area 134 For example, it can be flat next to the optically active area 112 be arranged. The optically inactive area 134 can, for example, contact pads 112 . 114 or insulator layers 110 . 116 for electrically contacting the organic functional layer structure 106 exhibit. In other words, in the geometric edge region, the optoelectronic component 140 . 160 be formed such that contact pads 112 . 114 for electrically contacting the optoelectronic component 140 . 160 are formed, for example by electrically conductive layers, such as contact pads 112 . 114 , Electrodes 104 . 108 or the like in the optically inactive region 134 at least partially exposed.

The area of the optoelectronic component 140 . 160 on or above the vehicle 102 with the optically active region 132 and the optically inactive region 134 can be considered electrically active area 136 be designated.

An optoelectronic component 140 . 160 which is at least partially transmissive, for example transparent or translucent, formed, for example, a transmitting carrier 102 , transmitting electrodes 110 . 114 , a transmissive, organic functional layered structure 106 , and a transmitting barrier thin film 116 can have two planar, optically active sides - in the schematic cross-sectional view of the top and bottom of the optoelectronic component 140 . 160 ,

The optically active area 132 an optoelectronic component 140 . 160 However, it can also have only one optically active side and one optically inactive side, for example in the case of an optoelectronic component 140 . 160 which is set up as a top emitter or bottom emitter, for example by the second electrode 108 or the barrier thin film on the support 102 is formed reflective for provided electromagnetic radiation.

In various embodiments, on or above the second electrode 108 a barrier thin film 116 be arranged (shown in 1a , b) such that the second electrode 108 , the electrical insulations 110 and the organic functional layer structure 106 from the barrier thin film 116 surrounded, ie in conjunction of barrier thin film 116 with the carrier 102 are included.

Under a "barrier thin film" 116 or a "barrier thin film" 116 In the context of this description, for example, a layer or a layer structure can be understood that is suitable for forming a barrier to chemical contaminants or atmospheric substances, in particular to water (moisture) and oxygen. In other words, the barrier thin film 116 designed such that it can not be penetrated by OLED-damaging substances such as water, oxygen or solvent or at most very small proportions.

According to one embodiment, the barrier thin film 116 be formed as a single layer (in other words, as a single layer). According to an alternative embodiment, the barrier thin layer 116 have a plurality of sub-layers formed on each other. In other words, according to an embodiment, the barrier thin film 116 be formed as a layer stack (stack). The barrier thin film 116 or one or more sublayers of the barrier film 116 can be formed, for example, by means of a suitable deposition process, for. Example by means of a Molekugelagenabscheideverfahrens (MLD), Atomlagenabscheideverfahrens (ALD) according to an embodiment, for. Plasma Enhanced Atomic Layer Deposition (PEALD) or a plasma-less atomic layer deposition (PLALD) method, or by chemical vapor deposition (CVD) method according to another embodiment, e.g. , A plasma enhanced chemical vapor deposition (PECVD) or plasma-less chemical vapor deposition (PLCVD) process, or alternatively by other suitable deposition techniques.

By using an atomic layer deposition (ALD) and / or a molecular layer deposition (MLD) process, very thin layers can be deposited. In particular, layers can be deposited whose layer thicknesses are in the atomic layer region.

According to one embodiment, in the case of a barrier thin film 116 comprising a plurality of sublayers, all sublayers being formed by means of an atomic layer deposition process and / or a molecular layer deposition process (MLD). A layer sequence comprising only ALD layers and / or MLD layers can also be referred to as "nanolaminate".

According to an alternative embodiment, in the case of a barrier thin layer 116 comprising a plurality of sublayers, one or more sublayers of the barrier film 116 be deposited by a deposition method other than an atomic layer deposition method, for example, by a vapor deposition method.

The barrier thin film 116 According to one embodiment, it may have a layer thickness of about 0.1 nm (one atomic layer) to about 1000 nm, for example a layer thickness of about 10 nm to about 100 nm according to an embodiment, for example about 40 nm according to an embodiment.

According to an embodiment, in which the barrier thin film 116 has multiple sub-layers, all sub-layers may have the same layer thickness. According to another embodiment, the individual partial layers of the barrier thin layer 116 have different layer thicknesses. In other words, at least one of Partial layers may have a different layer thickness than one or more other of the partial layers.

The barrier thin film 116 or the individual partial layers of the barrier thin film 116 may be formed according to an embodiment as a translucent or transparent layer. In other words, the barrier thin film 116 (or the individual sublayers of the barrier thin film 116 ) may consist of a translucent or transparent substance (or a mixture of substances that is translucent or transparent).

According to one embodiment, the barrier thin film 116 or (in the case of a layer stack having a plurality of sublayers) one or more of the sublayers of the barrier film 116 alumina, zinc oxide, zirconium oxide, titanium oxide, hafnium oxide, tantalum oxide lanthanum oxide, silicon oxide, silicon nitride, silicon oxynitride, indium tin oxide, indium zinc oxide, aluminum-doped zinc oxide, and mixtures and alloys thereof. In various embodiments, the barrier thin film 116 or (in the case of a layer stack having a plurality of sublayers) one or more of the sublayers of the barrier film 116 one or more high-index substances, in other words one or more substances with a high refractive index, for example with a refractive index of at least 2.

It should also be pointed out that in various embodiments also entirely on a barrier thin film 116 can be omitted (shown in 1c , d). In such an embodiment, the optoelectronic component device may for example have a further encapsulation structure, whereby a barrier thin film 116 can be optional, for example, a cover, for example, a Kavitätsglasverkapselung or metallic encapsulation.

On or above the electrically functional structure 130 . 150 For example, at least partially on or over the optically active region 132 and / or at least partially on or over the optically inactive region 134 , a getter layer may be disposed (not shown) such that the getter layer is the electrically functional structure 130 . 150 hermetically seals with respect to harmful environmental influences, for example, the diffusion rate of water and / or oxygen to the barrier thin film 116 and / or the electrically functional structure 130 . 150 reduced.

In various embodiments, the getter layer may have a matrix and distributed therein a getter.

In various embodiments, the getter layer may be translucent, transparent or opaque and have a layer thickness of greater than about 1 micron, for example, a layer thickness of several microns. In various embodiments, the matrix of the getter layer may comprise a lamination adhesive.

In various embodiments, light-scattering particles which can lead to a further improvement in the color angle distortion and the coupling-out efficiency can also be embedded in the getter layer. In various embodiments may be provided as light scattering particles, for example, dielectric scattering particles such as metal oxides such. For example, silicon oxide (SiO ₂ ), zinc oxide (ZnO), zirconium oxide (ZrO ₂ ), indium tin oxide (ITO) or indium zinc oxide (IZO), gallium oxide (Ga ₂ O _x ) alumina, or titanium oxide. Other particles may also be suitable as long as they have a refractive index which is different from the effective refractive index of the matrix of the translucent layer structure of the getter layer, for example air bubbles, acrylate or glass hollow spheres. Furthermore, for example, metallic nanoparticles, metals such as gold, silver, iron nanoparticles, or the like may be provided as light-scattering particles.

In various embodiments, between the second electrode 108 and the getter layer may be provided with an electrically insulating layer (not shown), for example SiN, SiOx or SiNOx, for example with a layer thickness in a range of approximately 300 nm to approximately 1.5 μm, for example with a layer thickness in one Range from about 100 nm to about 1 μm to protect electrically unstable materials, for example, during a wet chemical process.

In various embodiments, the optically active region 132 be at least partially free of getter layer, for example, when the getter layer is opaque and the optically active region 132 is formed transparent and / or translucent. Furthermore, the optically active region 132 be at least partially free of getter layer to save getter layer.

Furthermore, in various exemplary embodiments, additionally one or more input / output coupling layers in the organic, optoelectronic component can be provided 140 . 160 be formed, for example, an external Auskoppelfolie on or above the carrier 102 (not shown) or an internal coupling-out layer (not shown) in the layer cross-section of the optoelectronic component 140 . 160 , The coupling / decoupling layer may have a matrix and scattering centers distributed therein, wherein the average refractive index of the input / outcoupling layer is greater than the average refractive index of the layer from which the electromagnetic radiation is provided.

In the event, for example, that a light-emitting monochrome or emission-limited optoelectronic component is to be provided, it is sufficient for the organic functional layer structure to be translucent at least in a partial region of the wavelength range of the desired monochromatic light or for the limited emission spectrum.

In various embodiments, the optoelectronic component 130 . 140 . 150 . 160 an electric busbar 118 on or above the first electrode 118 (shown) or organic functional layer structure 106 (not shown). In various embodiments, the electrical busbar 118 by means of an electrical insulation 120 with regard to further layers of the optoelectronic component 130 . 140 . 150 . 160 be electrically isolated. In various embodiments, the electrical busbar 118 be formed such that the electrical busbar 118 of organic functional layer structure 106 is at least partially surrounded.

The electric busbar 118 may be arranged to increase the lateral current distribution in the optoelectronic component, for example if the first electrode 104 and / or the second electrode 108 have / has an electrical sheet resistance, which is a large-area forming of the optically active region 132 would prevent. The electric busbar 118 For example, with one of the electrodes 104 . 108 be electrically connected. In various embodiments, optoelectronic component 130 . 140 . 150 . 160 two or more electrical busbars, wherein the plurality of electrical busbars may be electrically coupled to the same or, with respect to the electrical potential of the electrodes, different electrodes.

In various embodiments, on or above the electrically functional structure 130 . 150 be formed on the encapsulation structure, wherein the encapsulation structure, a first support structure 122 on or above the electrical busbar 118 having.

In one embodiment illustrated in FIG 1b are the first electrode 104 , the electric busbar 118 , the organic functional layer structure 106 and the second electrode 108 at least partially by means of a barrier thin film 116 encapsulated. On or above the barrier thin film 116 can be an encapsulation structure 142 be educated. The barrier thin film 116 may according to one of the embodiments of the barrier thin film on the support 102 be educated.

The encapsulation structure 142 can a cover 124 have the above the electrically functional structure 130 applied or formed.

A cover 124 For example, a glass cover 124 , a metal foil cover 124 or a sealed plastic film cover 124 be.

The cover 124 can be hermetically sealed with respect to water and / or oxygen.

The cover 124 can by means of a second support structure 128 with the barrier thin film 116 (shown in 1b ), with contact pads 112 . 114 (shown in 1d ) or the electrodes 104 . 108 (not shown) be connected conclusively, for example, materially.

In the embodiments, in 116 the cover 124 is connected to the barrier thin film conclusively, the second support structure 128 For example, be formed as an adhesive layer. The second support structure may be the electrically functional structure 130 surface and hermetically seal with respect to harmful environmental influences, for example, the diffusion rate of water and / or oxygen to the barrier thin film 116 reduced. The cover 124 for example, on the barrier thin film 116 with an adhesive 128 be glued, for example, be laminated. The cover 124 For example, it may be formed as a glass cover, a metal cover and / or a plastic cover. The cover 124 For example, it can be structured, for example as a cavity glass.

The barrier thin film 116 and / or the cover 124 can / can be designed such that the enclosed layers are hermetically sealed with respect to harmful environmental influences, for example with regard to water and / or oxygen.

In one embodiment, a cover 124 For example, made of glass, the second support structure 128 as a fry connection 128 (glass frit bonding / glass soldering / seal glass bonding) by means of a conventional glass solder in the geometric edge regions of the electrically active region 136 be educated.

In various embodiments, the second support structure may be translucent and / or transparent and have a layer thickness of greater than about 1 micron, for example, a layer thickness of several microns. In various embodiments, the second support structure may include or be a lamination adhesive.

In the first support structure 122 and / or the second support structure 128 In various embodiments, light-scattering particles may also be embedded, which may lead to a further improvement in the color angle distortion and the coupling-out efficiency.

In various embodiments may be provided as light scattering particles, for example, dielectric scattering particles such as metal oxides such. For example, silicon oxide (SiO ₂ ), zinc oxide (ZnO), zirconium oxide (ZrO ₂ ), indium tin oxide (ITO) or indium zinc oxide (IZO), gallium oxide (Ga ₂ O _x ) alumina, or titanium oxide. Other particles may also be suitable, provided that they have a refractive index which is different from the effective refractive index of the matrix of the translucent layer structure, for example air bubbles, acrylate or glass hollow spheres. Furthermore, for example, metallic nanoparticles, metals such as gold, silver, iron nanoparticles, or the like may be provided as light-scattering particles.

In various embodiments, between the second electrode 108 and the second support structure 128 or an electrically insulating layer (not shown) may be applied between the second electrode and the first support structure, for example SiN, SiO _x , SiNO _x , for example with a layer thickness in a range from approximately 300 nm to approximately 1.5 μm, for example, with a layer thickness in a range of about 100 nm to about 1 μm to protect electrically unstable materials, for example during a wet chemical process.

In various embodiments, the first support structure 122 and / or the second support structure 128 be set up such that the second support structure 128 has a refractive index that is less than the refractive index of the cover 124 , Such a first support structure 122 and / or such a second support structure 128 For example, it may comprise a low refractive index adhesive, for example an acrylate having a refractive index of about 1.3. The first support structure 122 and or the second support structure 128 however, for example, they may also comprise a high refractive index adhesive having, for example, high refractive index non-diffusing particles and having an average refractive index approximately equal to the average refractive index of the organically functional layered structure, for example in a range from about 1.7 to about 2.0 or greater. Furthermore, several different adhesives in the first support structure 122 and / or the second support structure 128 be provided, which form an adhesive layer sequence.

In various embodiments, the cover may / may 124 , the first supporting structure 122 and / or the second support structure 128 have a refractive index (for example at a wavelength of 633 nm) of 1.55.

In various embodiments, between the cover 124 and the electrically functional structure 31 . 150 a cavity 126 be educated. The cavity 126 may comprise a gas, gas mixture and / or a functional layer (not shown). The cavity 126 For example, it may be partially or completely filled by means of the gas, gas mixture and / or the functional layer.

The cover 124 , the distance of the cover 124 to the electrically functional structure 130 . 150 ; the compression modulus of the substance or of the mixture of substances in the cavity 126 and / or the lateral distance of the first support structure 122 to the second support structure 128 are formed such that the cover 124 not mechanically or only with the increased force mechanically up to the electrically functional structure 130 . 150 can be curved or bent. The formation of the first support structure 122 can provide the necessary force to bend the cover down to the electrically functional structure 130 . 150 already increase.

In one embodiment, the functional layer may include a getter, that is, configured as a getter layer. On or above the getter layer is at least partially the cover 124 arranged.

In various embodiments, the getter layer may be at least partially covered by at least one second support structure 128 be surrounded, for example, such that the getter layer has no surface to air, for example, be completely surrounded.

In the context of this description, a getter layer may include or be formed from a getter. For example, a getter layer having a getter may have a getter in the form of particles distributed in a matrix.

In the context of this description, a "getter" may comprise a substance or a substance mixture which absorbs harmful substances and / or harmful substance mixtures, for example oxygen or the water of the atmospheric moisture. However, a getter may also be distributed in a matrix, for example in the form of particles or dissolved, and by means of the absorption of harmful substances or harmful substance mixtures cause the substance or the substance mixture of the matrix additionally having oxygen-repellent and / or moisture-repellent properties.

A getter may have in various embodiments as a substance, for example, an oxidizable substance or be formed therefrom. For example, an oxidizable substance can react with oxygen and / or water and thereby bind these substances. Thus, for example, getters may comprise or be formed from easily oxidizing substances from the chemical group of alkali metal and / or alkaline earth metals, for example magnesium, calcium, barium, cesium, cobalt, yttrium, lanthanum and / or rare earth metals. Furthermore, other metals may be suitable, for example aluminum, zirconium, tantalum, copper, silver and / or titanium or oxidizable non-metallic substances. In addition, a getter may include or be formed from CaO, BaO, and MgO. However, a getter may also include or be formed from a desiccant. For example, a desiccant may irreversibly absorb water without altering volume or binding water by physisorption without significantly altering its volume.

By supplying heat, for example by means of raising the temperature, the adsorbed water molecules can be removed again. A getter may include, for example, dried silica gels or zeolites, or may be formed therefrom in various embodiments. A getter comprising or formed from a zeolite can adsorb oxygen and / or water in the pores and channels of the zeolite. In the adsorption of water and / or oxygen by means of dried silica gels and / or zeolites no harmful substances or mixtures can be formed for the underlying layers. Furthermore, the getters of dried silica gels and / or zeolite can not change the volume by means of the reaction with water and / or oxygen.

The getter particles may in various embodiments have a mean diameter less than about 50 microns, for example, less than about 1 micron. The average diameter of the getter particles should not be greater than the thickness of the getter layer, for example, not to damage the adjacent layers and the device.

For example, in various embodiments, the getter particles may have a maximum mean diameter that is about 20% of the getter layer thickness.

Getter particles having an average diameter of less than about 1 μm, for example in a range of about 50 nm to about 500 nm, can have the advantage that even with a dense packing of the getter particles punctual forces on, for example, an OLED are reduced.

In various embodiments, the first support structure 122 the cover 124 with the electrically functional structure 130 . 150 conclusively connect, for example, cohesive.

In one embodiment, the first support structure 122 / or the second support structure 128 Hermetically sealed with respect to water and / or oxygen.

In various embodiments, the getter layer may be configured such that the getter layer has a refractive index that is less than the refractive index of the cover 124 , Such a getter layer may comprise, for example, a low refractive index adhesive, for example an acrylate having a refractive index of about 1.3. For example, in one embodiment, the getter layer may comprise a high refractive index adhesive having, for example, high refractive non-diffusing particles and an average refractive index approximately equal to the average refractive index of the organic functional layer structure, for example, in a range of about 1.7 to about 2 , 0 or greater. Furthermore, several different adhesives may be provided in the getter layer, which form an adhesive layer sequence.

A first support structure 122 on or above the electrical busbar 118 can cause possible particle contamination (see 8th ) between the electrically active structure 130 and the cover 124 in the electrical insulation 120 be pressed. The electrical insulation 120 can thus act as an additional threshold against short circuits. The formation of the first support structure 122 for example, a liquid metal such as a GaInSn alloy; the electrical insulation 120 and / or the electrical busbar 118 can be formed by one of the methods used to form the contact pads 112 . 114 and / or the second support structures 128 is used, for example, a To Print. This allows structure widths for the first support structure 122 , the electrical insulation 120 and / or the electrical busbar 118 be realized in a range of about 1 micron to about 100 microns. The structure width for a first support structure made of an adhesive can be greater than 100 μm for process reasons.

In various embodiments, the first support structure 122 and / or the second support structure 128 have one of the following shapes or be formed: punctiform, linear, cylindrical, cuboid, pyramidal and / or circular.

2a , b shows schematic cross-sectional views of optoelectronic components in the method for producing an optoelectronic component, according to various embodiments.

2a shows various schematic cross-sectional view of an optoelectronic component according to various embodiments in a method for producing an optoelectronic component.

In a concrete embodiment 200 for producing an optoelectronic component 250 , becomes an electrically functional structure 130 in a substrate line 200a and in parallel, a cover 124 in a laminating line 200b , educated.

After forming the electrically functional structure 130 with barrier thin film 116 on or over the electrodes 104 . 108 and the organic functional layer structure 116 covers the barrier thin film 116 of the structured substrate over a large area, without being laterally structured.

In one embodiment, over the electrically functional structure 130 on the barrier thin film 116 a second metal layer 202 be formed shown by reference numerals 210 ,

In various embodiments, the second metal layer 202 also as a second functional support structure layer 202 be understood, for example, if the support structure 122 . 128 is formed of a non-metallic material, for example when the support structure 122 . 128 is formed by means of a glass or plastic, for example a glass solder or an adhesive.

In one embodiment, forming the second metal layer 202 a metal alloy or metallization on the electrically functional structure 130 For example, depositing Al, Zn, Cr, Sn, Mo, Au, Ag and / or Ni to form support structures. The application of the metal alloy 210 or metallization 210 can be structured (shown) or unstructured, that is, the second metal layer 202 can be structured or structured and unstructured. The deposited second metal layer 202 may have a thickness in a range of 20 nm to 25 m. In various embodiments, forming the second metal layer 202 forming a plurality of sub-layers in a layer sequence. The geometric edge of the electrically active area 136 can be formed or processed such that it is free of metal layer. This can prevent further alloying after lamination of the encapsulation structure (see description 5 ).

In a further method step, a cover 124 provided. This cover 124 For example, it may be a cleaned laminating glass or a film hermetically sealed with protective layers.

On the cover 124 can optionally have an adhesive layer 204 or non-stick coating 204 be formed - represented by reference numerals 220 For example, for a structured or structured application of a first metal layer 206 - represented by reference numerals 230 , The first metal layer 206 For example, it may comprise a metal or a metal alloy that is liquid at room temperature. The second metal layer 206 can be formed for example by means of printing, dispensing and / or by means of a solution.

In various embodiments, the first metal layer 206 also as the first functional support structure layer 206 be understood, for example, if the support structure 122 . 128 is formed of a non-metallic material, for example when the support structure 122 . 128 is formed by means of a glass or plastic, for example a glass solder or an adhesive.

In one embodiment, by means of the adhesive layer 204 or non-stick layer 204 a first metal layer 206 at the edge of the cover 124 be formed with or without areal application, for example, only on the edge or in the whole area. In one embodiment, the non-stick layer 204 or adhesive layer 204 be formed such that a first metal layer 206 at the edge of the cover 124 , For example, is formed geometrically further out than the geometric edge of the counterpart 210 (the second metal layer 202 Substrate); and / or over the electrical busbar.

The second metal layer 206 may be liquid on the cover in one embodiment 124 , For example, be applied to a laminating glass, wherein the second metal layer 206 the cover 124 depending on the substrate (adhesive layer 204 / Non-stick coating 204 ) wetted or not. In other words: by means of the adhesive layer 204 or non-stick layer 204 can be a structuring of the first metal layer 206 will be realized. As an adhesive layer 204 / a non-stick coating 204 For example, a layer comprising one or more of the following substances: TiOx, GaOx, WOx, ZrOx, AlOx; optional on the cover 124 be formed.

In a further process step 240 becomes the first metal layer 206 on the cover 124 in physical contact with the electrically functional structure 130 with the second metal layer 202 brought. In other words the cover 124 with first metal layer 206 becomes on the electrically functional structure 130 with second metal layer 202 laminated. In one embodiment, the first metal layer 206 and the second metal layer 202 so materially furnished that they begin to form a physical contact with each other when forming. For example, by the second metal layer 202 Aluminum and the first metal layer 206 has a eutectic GaInSn alloy. The first metal layer 206 and the second metal layer 202 alloy with each other and solidify themselves until there is no more local aluminum in physical contact with the GaInSn alloy. This is a selective solidification of the second metal layer 206 possible. The first metal layer 206 remains liquid at the points where it has not reacted with aluminum and can thus have an increased compression modulus, for example, have increased particle resistance - shown in FIG 2 B , The alloyed support structure 122 . 128 can reduce the pressure on softer intermediate areas, such as the organic functional layer structure 106 , reduce. In the geometric edge region of the electrically active region, reaction stops, for example a vacuum point, can further react the first metal layer 206 with the second metal layer 202 avoid.

By using a first metal layer 206 of a low melting first metal alloy in cooperation with a second metal layer 202 from further second alloying elements can metallic support structures 122 . 128 as a new alloy, for example on a thin-film encapsulation 116 be formed. The maximum melting temperature of the first metal alloy should be below the maximum specification temperature of the electrically functional structure, for example at most approximately 80 ° C. This gives organic functional layer structure 106 not damaged during encapsulation. A metallic support structure 122 . 128 should be dimensionally stable above the specification temperature, ie not liquefied during storage or during operation of the optoelectronic component. A metallic support structure with such material may be formed by the first metal layer 206 or the second metal layer 202 is formed from a eutectic substance or a eutectic substance mixture. When forming the metal layer from the eutectic substance or eutectic substance mixture, the eutectic substance or the eutectic substance mixture is at the phase equilibrium (eutectic). The complementary metal layer is formed in this embodiment of a substance or substance that shifts the eutectic substance or the eutectic mixture by means of chemical reaction from the eutectic. In one embodiment, the eutectic or eutectic composition may be in intermediate areas 126 between the support structures 122 , for example in cavities 126 , are still in phase equilibrium, for example, be elastic or viscoelastic. This allows the eutectic substance or the eutectic mixture in the cavities 126 act as an additional particle protection (see. 8th ).

In one embodiment, the eutectic or eutectic composition may include or be formed from a GaInSn alloy and the complementary metal may be aluminum or tin.

In one embodiment, the eutectic or eutectic composition may comprise 68 wt% Ga, 22 wt% In, and 10 wt% Sn. Such a GaInSn alloy can have a melting temperature of -19.5 ° C. have and wet glass, d. H. is thus processable at room temperature. By means of the Sn content of the alloy, the melting point of the GaInSn alloy can be adjusted, for example, a GaInSn alloy having 62 wt.% Ga, 22 wt.% In and 16 wt.% Sn has a melting temperature of 10.7 ° C on. In other words, by means of the Sn content, the melting point of a GaInSn alloy can be set to a process-suitable value.

In one embodiment, the eutectic or eutectic composition may comprise a Field metal or a Field metal alloy, for example, 51 wt% In, 33 wt% Bi, and 16 wt% Sn. Such an InBiSn alloy can have a melting temperature of 62 ° C. have and wet glass, d. H. is thus processable on a hot plate.

In one embodiment, the first functional support structure layer may be 206 and / or the second functional support structure layer 202 have an adjustable melting point, for example by means of a substance concentration of the substance or substance mixture of the first functional support structure layer 206 and / or the second functional support structure layer 202 ,

In one embodiment, the substance or mixture of substances may / may be the first functional support structure layer 206 and / or the second functional support structure layer 202 wet a glass substrate, ie have a contact angle in a range of 0 ° to about 120 °, for example in a range 0 ° to about 90 °, for example in a range of about 0 ° to about 60 °.

3a , b shows schematic cross-sectional views of optoelectronic components in the method for producing an optoelectronic component, according to various embodiments.

3a shows various schematic cross-sectional view of an optoelectronic component according to various embodiments in a method for producing an optoelectronic component.

In a concrete embodiment 300 for producing an optoelectronic component 350 , becomes an electrically functional structure 130 in a substrate line 300a and in parallel, a cover 124 in a laminating line 300b , educated.

After forming the electrically functional structure 130 with barrier thin film 116 on or over the electrodes 104 . 108 and the organic functional layer structure 116 covers the barrier thin film 116 of the structured substrate over a large area, without being laterally structured.

In one embodiment, over the electrically functional structure 130 on the barrier thin film 116 a non-stick layer 204 / Adhesive layer 204 be formed shown by reference numerals 310 ,

The non-stick layer 204 / Adhesive layer 204 may be laterally structured, for example. On the adhesive layer 204 may in one embodiment, the first metal layer 206 be formed - represented by the reference numeral 340 ,

In one embodiment, by means of the adhesive layer 204 or non-stick layer 204 a first metal layer 206 at the edge of the cover 124 be formed with or without areal application, for example, only on the edge or in the whole area. In one embodiment, the non-stick layer 204 or adhesive layer 204 be formed such that a first metal layer 206 at the edge of the cover 124 , For example, is formed geometrically further out than the geometric edge of the counterpart 210 (the second metal layer 202 Substrate); and / or over the electrical busbar.

The first metal layer 206 For example, it may comprise a metal or a metal alloy that is liquid at room temperature. The second metal layer 206 For example, it can be formed by means of printing, dispensing, doctoring and / or by means of a solution.

In a further method step, a cover 124 provided. This cover 124 For example, it may be a cleaned laminating glass, a hermetically sealed film and / or a metal foil. The cover may for example be laterally structured, for example in the region of the support structures to be formed 122 . 128 or in between, for example, to form a cavity.

On the cover 124 can be a second metal layer 202 be formed of a metal alloy or metallization - represented by the reference numeral 320 , The metal alloy or metallization may, for example, be configured as a deposition of Al, Zn, Cr, Sn and / or Ni, for example structured (shown) or unstructured (not shown).

The deposited second metal layer 202 may have a thickness in a range of 20 nm to 25 μPm. In various embodiments, forming the second metal layer 202 forming a plurality of sub-layers in a layer sequence. The geometric edge of the electrically active area 136 can be formed or processed such that it is free of metal layer. This can prevent further alloying after lamination of the encapsulation structure (see description 5 ).

The second metal layer 206 may be liquid on the cover in one embodiment 124 , For example, be applied to a laminating glass, wherein the second metal layer 206 the cover 124 depending on the substrate (adhesive layer 204 / Non-stick coating 204 ) wetted or not. In other words: by means of the adhesive layer 204 or non-stick layer 204 can be a structuring of the first metal layer 206 will be realized. As an adhesive layer 204 / a non-stick coating 204 For example, a layer comprising one or more of the following substances: TiOx, GaOx, WOx, ZrOx, AlOx; optional on the cover 124 be formed.

In a further process step 340 becomes the second metal layer 202 on the cover 124 in physical contact with the electrically functional structure 130 with the first metal layer 206 brought. In other words the cover 124 with second metal layer 202 becomes on the electrically functional structure 130 with first metal layer 206 laminated. In one embodiment, the first metal layer 206 and the second metal layer 202 so materially furnished that they begin to form a physical contact with each other when forming. For example, by the second metal layer 202 Aluminum and the first metal layer 206 has a eutectic GaInSn alloy. The first metal layer 206 and the second metal layer 202 alloy with each other and solidify themselves until there is no more local aluminum in physical contact with the GaInSn alloy. This is a selective solidification of the second metal layer 206 possible. The first metal layer 206 remains liquid at the points where it has not reacted with aluminum and can thus have an increased compression modulus, for example, have increased particle resistance - shown in FIG 3b , The alloyed support structures 122 . 128 can reduce the pressure on softer intermediate areas, such as the organic functional layer structure 106 , reduce. In the geometric edge region of the electrically active region, reaction stops, for example a vacuum point, can further react the first metal layer 206 with the second metal layer 202 avoid.

4a Figure-d show schematic cross-sectional views of optoelectronic components according to various embodiments.

A first support structure 122 over an electric busbar 118 and a second support structure 128 in the edge region of the electrically active region 136 (shown in 1 - 3 ) may be before and / or after forming the support structures 122 . 128 have large-area liquid metal layers and / or adhesive layers. These liquid layers can continue to react and / or continuously change. This allows the border area 402 a support structure 122 . 128 to be exposed to a continuous change (shown in 4a ). The edge of the support structures 122 . 128 can in various embodiments by means of a protective layer, an adhesive layer and / or a release layer (shown in FIG 4b -D) be protected against such changes.

4b shows two adjacent support structures 122 . 128 where next to the support structures 122 . 128 a non-reactive structure 404 is formed, for example, a chemically non-reactive material, such as Ni for GaInSn.

4c shows two adjacent support structures 122 . 128 where next to the support structures 122 . 128 a non-stick layer 406 is formed, for example, from a non-wetting substance or mixture with respect to the substance or mixture of the support structures 122 . 128 , With a support structure 122 . 128 For example, Ga, In, and / or Sn can be applied directly to the lamination glass 124 a non-stick layer 406 comprising GaO _x, AlO _x, TiO _x, ZrO _x and / or ZnO, _x applied while the substrate of the liquid metal alloy comprising for example glass, for example, that a good wetting of GaInSn has.

4d shows two adjacent support structures 122 . 128 where cavity 126 is partially or completely filled with a substance or mixture of substances that has a higher compression modulus than the substance or the mixture of the support structures 122 . 128 , This can be done between the support structures 122 . 128 on the cover 124 at least partially a functional layer 206 be formed, wherein the functional layer 206 at least partially wets the cover in the cavity. The functional layer 206 may have a thickness that is less than or equal to the thickness of the support structures 122 . 128 , In other words: the cavity 126 or the cavity 126 with functional layer 206 may have a lower hardness than the support structure 122 . 128 , This can be between cover 124 and electrically functional structure 130 . 150 be formed a spring, the mechanical loads (see 8th ) can reduce / cushion.

5a -C shows schematic cross-sectional views of optoelectronic components, according to various embodiments. In various embodiments, a support structure 122 . 128 be configured as a material connection of a cover with an electrically functional structure.

When forming the cohesive connection, the reaction time of the support structure 122 . 128 with the cover and / or the electrically functional structure too slow in terms of a desired application.

In various embodiments, at least one functional support structure layer 202 . 206 for forming a support structure 122 . 128 have a structuring, for example, have a structured surface or a structured shape or be formed in such a way (shown in FIG 5a c). As a result, the surface-to-volume ratio of the functional support structure layer can be increased and thereby the Reaction time of the functional support structure layer 202 . 206 with the cover 124 the electrically functional structure 130 and / or a second functional support structure layer 202 . 206 be shortened.

5a shows a thin functional support structure layer 202 . 206 between the cover 124 and the electrically functional structure 130 , A thin functional support structure layer 202 . 206 can react quickly with the functional support structure layer 202 . 206 allow, for example, when the thin functional support structure layer 202 . 206 is formed from a very reactive substance or mixture of substances with regard to the substance or the substance mixture of the cover 124 , the surface of the electrically active structure 130 . 150 and / or a complementary second functional support structure layer 206 , A reactive substance or a reactive substance mixture can be understood as reactive, ie chemically active.

A thin functional support structure layer 202 . 206 For example, it may be a thin metal layer, a thin metal alloy, a thin glass layer, a thin ceramic layer, a thin plastic layer or a thin adhesive layer.

A thin functional support structure layer 202 . 206 For example, it may have a thickness in a range of about 30 nm to about 100 μm, for example in a range of about 50 nm to about 50 μm, for example in a range of about 100 nm to about 10 μm, for example in a range of about 250 nm to about 5 μm, for example in a range of about 500 nm to about 1 μm.

In one embodiment, the first functional support structure layer is 206 formed as a thin aluminum layer, while the second functional support structure layer 202 is formed as a GaInSn layer.

5b shows a powdered functional support structure layer 202 . 206 between the cover 124 and the electrically functional structure 130 , A powdered functional support structure layer 202 . 206 For example, by powder coating one or more substances of the functional support structure layer 202 . 206 may be formed, wherein the particles may have a mean diameter in a range of about 30 nm to about 100 microns.

5c shows a structured functional support structure layer 202 . 206 between the cover 124 and the electrically functional structure 130 ,

In one embodiment, a first functional support structure layer 206 geometrically and / or chemically complementary to a second functional support structure layer 202 be formed, this functional support structure layer 202 . 206 a support structure 122 . 128 form.

In one embodiment, a structured functional support structure layer 202 . 206 have a lamellar shape.

6a , b shows schematic cross-sectional views of a conventional optoelectronic component.

An organic optoelectronic device (shown in FIG 6 ), for example an OLED, can be an anode 604 and a cathode 608 with an organic functional layer system 606 in between. The organic functional layer system 606 may comprise one or more emitter layers (not shown) in which electromagnetic radiation is generated, one or more charge carrier pair generation layer structures (not shown) each consisting of two or more charge generating pairs ("charge generating layer"). CGL) for charge carrier pair generation, and one or more electron block layers (not shown), also referred to as Hole Transport Layer (HTL), and one or more Lochblockadeschichten (not shown), also referred to as an electron transport layer (s) ("Electron transport layer" - ETL) to direct the flow of electricity. Organic-based optoelectronic components, for example organic light emitting diodes (OLEDs), are finding increasing widespread use in general lighting, for example as surface light sources. An organic optoelectronic device conventionally comprises: a first electrode 604 on or over a carrier 602 is trained. On or above the first electrode 604 is an organic functional layered structure 606 educated. Over or on the organic functional layer structure 606 is a second electrode 608 educated. The second electrode 608 is by means of an electrical insulation 610 from the first electrode 604 electrically isolated. The electrical insulations 610 are arranged such that a current flow between the first electrode 604 and the second electrode 608 is prevented. The second electrode 608 is with a second contact pad 614 physically and electrically connected and the first electrode 604 with a first contact pad 612 physically and electrically connected.

7a , b shows schematic cross-sectional views of a conventional optoelectronic component.

7a shows a conventional method for encapsulating an optoelectronic device 600 , On the second electrode 608 an optoelectronic component 600 (please refer 6 ) becomes a barrier thin film 700 formed such that the second electrode 608 , the electrical insulations 610 and the organic functional layer structure 606 from the barrier thin film 616 is surrounded. Continue on a cover 704 an adhesive layer 706 applied. The cover 704 is for example a laminating glass 704 or a slide 704 and the adhesive is an epoxy adhesive. The cover 704 with adhesive layer 706 is then on the barrier thin film 702 applied (shown in 7a ). As a result, an encapsulated optoelectronic component 600 with a conventional encapsulation structure 706 with barrier thin film 700 and laminated cover 702 educated.

7b shows a conventional method for encapsulating an optoelectronic device 600 , On a cover 704 becomes a moisture-binding getter 710 applied and in the edge region of the cover 702 a lateral adhesive layer 708 applied. The cover 704 with lateral adhesive layer 708 and getters 710 is then on the optoelectronic device 600 on the contact pads, for example 612 . 614 applied (shown in 7b ). As a result, conventionally a Kavitätsglasverkapselung 712 educated.

8a , b shows schematic cross-sectional views of a conventional optoelectronic component.

When a pressure 804 or a curvature 806 on a cover 704 a conventional encapsulation acts, for example on a protective glass or a lamination glass; can be a particle contamination 802 pressed into the organic functional layers of the OLED. This can lead to a short circuit and / or create latent heat spots. Heat spots could result in spontaneous failure as a late consequence. Mechanically flexible components may have a higher susceptibility to error due to the possibility of curvature.

In various embodiments, an optoelectronic component and a method for producing an optoelectronic component are provided with which it is possible to increase the mechanical stability of encapsulated optoelectronic components.

The encapsulation protective layers are no longer or less pressed onto the organic functional layers, whereby an increased particle resistance is achieved. The process temperature for producing the encapsulation is lower than the degradation temperature of the organic substances, for example at most about 80 ° C, whereby the organic substances are spared.

The encapsulation according to various embodiments can be applied by various methods, such as vacuum evaporation, printing, spraying, laser structuring, doctor blading or the like. For the support structures, the different melting points of alloys can be used technically advantageous, for example, a reduced melting point, for example below 80 ° C. Furthermore, no further process steps with regard to the encapsulation are necessary, for example an ablation of the thin-film encapsulation. The support structures in conjunction with the thin-film encapsulation can reduce the risk of short-circuiting of the organic functional layer system. Furthermore, very soft materials can be used in the alloys, whereby they can be used for substrates of different types of glass with different coefficients of expansion. The first component of the support structure, which is glass wetting, may have a preference in process control for full area patterning with a very low material requirement. The first component is cheaper than previously used adhesives and recyclable. Depending on the choice of the second component, for example, whether the second component is liquid or solid, for example, large areas can be wetted liquid. As a result, for example, a better particle resistance can be made possible. The material of the support structures is non-toxic and insoluble in water, so that no contamination problems are foreseeable. Furthermore, due to the choice of material of the support structures, the support structures under ambient air, for example in a clean room, are formed. In an encapsulation formed by means of lamination in a vacuum, additional measures to reduce the particle sensitivity are optional, for example, introduction of filler in cavities. Further, reducing particulate contamination by forming the support structures for reduced pressure / stress transparent components can be applied to bends. Furthermore, interference fringes which occur at different adhesive thicknesses over the optically active surface can be made possible with suitable encapsulation without thin-film encapsulation. This can continue to save costs.

Claims (11)

Optoelectronic component ( 140 . 160 . 250 . 350 ) comprising: An electrically active area ( 136 ) having an optically active region ( 132 ) and an optically inactive region ( 134 ); • where the electrically active region ( 136 ) at least one electrical busbar ( 118 ), which in the optically active region ( 132 ) is trained; An encapsulation structure on or above the electrically active region ( 136 ); Where the encapsulation structure is a support structure ( 122 ) on or above the electrical busbar ( 118 ) in the optically active region ( 132 ) having. Optoelectronic component ( 140 . 160 . 250 . 350 ) according to claim 1, wherein the optoelectronic component ( 140 . 160 . 250 . 350 ) as an organic light emitting diode ( 140 . 160 . 250 . 350 ) is trained. Optoelectronic component ( 140 . 160 . 250 . 350 ) according to one of claims 1 or 2, wherein the electrically active region ( 136 ) an electrically functional structure ( 130 . 150 ), wherein the electrically functional structure has an organic functional layer structure ( 106 ) between a first electrode ( 104 ) and a second electrode ( 108 ) having. Optoelectronic component ( 140 . 160 . 250 . 350 ) according to one of claims 1 to 3, further comprising: a first electrical busbar ( 118 ) and at least one second electrical busbar. Optoelectronic component ( 140 . 160 . 250 . 350 ) according to one of claims 1 to 4, wherein at least one support structure ( 122 ) has a substance or mixture of substances which is hermetically sealed with respect to water and / or oxygen. Optoelectronic component ( 140 . 160 . 250 . 350 ) according to one of claims 1 to 5, wherein the support structure ( 122 ) has a width which is similar to the width of the electrical busbar ( 118 ). A method of manufacturing an optoelectronic device, the method comprising: • forming an electrically active region ( 136 ) having an optically active region ( 132 ) and an optically inactive region ( 134 ); • where the electrically active region ( 136 ) at least one electrical busbar ( 118 ) is formed, wherein the busbar ( 118 ) in the optically active region ( 132 ) is formed; Forming an encapsulation structure on or above the electrically active region ( 136 ); Wherein the encapsulation structure is provided with a support structure ( 122 ) on or above the electrical busbar ( 118 ) in the optically active region ( 132 ) is formed. Method according to claim 7, wherein the optoelectronic component ( 140 . 160 . 250 . 350 ) is formed as an organic light emitting diode. Method according to one of claims 7 or 8, wherein the formation of the electrically active region ( 136 ) forming an electrically functional structure ( 130 . 150 ), wherein the electrically functional structure ( 130 . 150 ) an organic functional layer structure ( 106 ) between a first electrode ( 104 ) and a second electrode ( 108 ) having. Method according to claim 9, wherein the electrical busbar ( 118 ) with the first electrode ( 104 ) or with the second electrode ( 108 ) is formed electrically coupled. Method according to one of claims 7 to 10, wherein the support structure ( 122 ) is formed as a second busbar.

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