DE102016121375A1 - Vorrichtung und Verfahren zur Halterung einer Maske in einer Planlage - Google Patents
Vorrichtung und Verfahren zur Halterung einer Maske in einer Planlage Download PDFInfo
- Publication number
- DE102016121375A1 DE102016121375A1 DE102016121375.6A DE102016121375A DE102016121375A1 DE 102016121375 A1 DE102016121375 A1 DE 102016121375A1 DE 102016121375 A DE102016121375 A DE 102016121375A DE 102016121375 A1 DE102016121375 A1 DE 102016121375A1
- Authority
- DE
- Germany
- Prior art keywords
- mask
- substrate
- magnets
- substrate holder
- coating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000000034 method Methods 0.000 title claims abstract description 35
- 239000000758 substrate Substances 0.000 claims abstract description 106
- 238000000576 coating method Methods 0.000 claims abstract description 19
- 239000011248 coating agent Substances 0.000 claims abstract description 15
- 239000007858 starting material Substances 0.000 claims abstract description 9
- 230000006641 stabilisation Effects 0.000 claims abstract description 7
- 238000011105 stabilization Methods 0.000 claims abstract description 7
- 230000005484 gravity Effects 0.000 claims description 10
- 230000000087 stabilizing effect Effects 0.000 claims description 8
- 238000006073 displacement reaction Methods 0.000 claims description 7
- 238000003860 storage Methods 0.000 claims description 6
- 239000000725 suspension Substances 0.000 claims description 5
- 229910001374 Invar Inorganic materials 0.000 claims description 4
- 239000003381 stabilizer Substances 0.000 claims description 4
- 239000002245 particle Substances 0.000 abstract description 9
- 239000007789 gas Substances 0.000 description 34
- 239000000443 aerosol Substances 0.000 description 11
- 239000012159 carrier gas Substances 0.000 description 10
- 238000000151 deposition Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 230000008021 deposition Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000001105 regulatory effect Effects 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000009833 condensation Methods 0.000 description 2
- 230000005494 condensation Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000005339 levitation Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- BUHVIAUBTBOHAG-FOYDDCNASA-N (2r,3r,4s,5r)-2-[6-[[2-(3,5-dimethoxyphenyl)-2-(2-methylphenyl)ethyl]amino]purin-9-yl]-5-(hydroxymethyl)oxolane-3,4-diol Chemical compound COC1=CC(OC)=CC(C(CNC=2C=3N=CN(C=3N=CN=2)[C@H]2[C@@H]([C@H](O)[C@@H](CO)O2)O)C=2C(=CC=CC=2)C)=C1 BUHVIAUBTBOHAG-FOYDDCNASA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000002775 capsule Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000009432 framing Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 235000013490 limbo Nutrition 0.000 description 1
- 230000005415 magnetization Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052756 noble gas Inorganic materials 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000000284 resting effect Effects 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/228—Gas flow assisted PVD deposition
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102016121375.6A DE102016121375A1 (de) | 2016-11-08 | 2016-11-08 | Vorrichtung und Verfahren zur Halterung einer Maske in einer Planlage |
PCT/EP2017/078299 WO2018087029A1 (fr) | 2016-11-08 | 2017-11-06 | Dispositif et procédé pour fixer un masque dans une position plane |
TW106138320A TW201823854A (zh) | 2016-11-08 | 2017-11-06 | 用於使遮罩保持平面位置之裝置及方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102016121375.6A DE102016121375A1 (de) | 2016-11-08 | 2016-11-08 | Vorrichtung und Verfahren zur Halterung einer Maske in einer Planlage |
Publications (1)
Publication Number | Publication Date |
---|---|
DE102016121375A1 true DE102016121375A1 (de) | 2018-05-09 |
Family
ID=60293949
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE102016121375.6A Withdrawn DE102016121375A1 (de) | 2016-11-08 | 2016-11-08 | Vorrichtung und Verfahren zur Halterung einer Maske in einer Planlage |
Country Status (3)
Country | Link |
---|---|
DE (1) | DE102016121375A1 (fr) |
TW (1) | TW201823854A (fr) |
WO (1) | WO2018087029A1 (fr) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113539877A (zh) * | 2021-07-22 | 2021-10-22 | 长鑫存储技术有限公司 | 半导体结构的测量装置及测量方法 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113493891B (zh) * | 2020-03-19 | 2022-09-02 | 上海微电子装备(集团)股份有限公司 | 掩模夹持模块及掩模拉伸装置 |
US20230067115A1 (en) * | 2021-08-27 | 2023-03-02 | Taiwan Semiconductor Manufacturing Co., Ltd. | Systems and methods for processing a substrate |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10158031A1 (de) * | 2000-11-27 | 2002-10-24 | Singulus Technologies Ag | Vorrichtung und Verfahren zum Aufsetzen und Abnehmen von Masken auf ein bzw. von einem Substrat bei einer Bearbeitung des Substrats im Vakuum |
DE102008037387A1 (de) * | 2008-09-24 | 2010-03-25 | Aixtron Ag | Verfahren sowie Vorrichtung zum Abscheiden lateral strukturierter Schichten mittels einer magnetisch auf einem Substrathalter gehaltenen Schattenmaske |
DE102010000447A1 (de) | 2010-02-17 | 2011-08-18 | Aixtron Ag, 52134 | Beschichtungsvorrichtung sowie Verfahren zum Betrieb einer Beschichtungsvorrichtung mit einer Schirmplatte |
US20160248049A1 (en) | 2015-02-25 | 2016-08-25 | Samsung Display Co., Ltd. | Deposition apparatus |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6524431B1 (en) * | 2000-11-10 | 2003-02-25 | Helix Technology Inc. | Apparatus for automatically cleaning mask |
KR20140053625A (ko) * | 2012-10-26 | 2014-05-08 | 삼성디스플레이 주식회사 | 유기물 증착 장치 |
KR102211969B1 (ko) * | 2014-01-03 | 2021-02-05 | 삼성디스플레이 주식회사 | 증착 장치 |
KR20160062331A (ko) * | 2014-11-24 | 2016-06-02 | 삼성디스플레이 주식회사 | 박막 증착 마스크 조립체 및 이를 포함하는 인라인식 박막 증착 장치 |
-
2016
- 2016-11-08 DE DE102016121375.6A patent/DE102016121375A1/de not_active Withdrawn
-
2017
- 2017-11-06 WO PCT/EP2017/078299 patent/WO2018087029A1/fr active Application Filing
- 2017-11-06 TW TW106138320A patent/TW201823854A/zh unknown
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10158031A1 (de) * | 2000-11-27 | 2002-10-24 | Singulus Technologies Ag | Vorrichtung und Verfahren zum Aufsetzen und Abnehmen von Masken auf ein bzw. von einem Substrat bei einer Bearbeitung des Substrats im Vakuum |
DE102008037387A1 (de) * | 2008-09-24 | 2010-03-25 | Aixtron Ag | Verfahren sowie Vorrichtung zum Abscheiden lateral strukturierter Schichten mittels einer magnetisch auf einem Substrathalter gehaltenen Schattenmaske |
DE102010000447A1 (de) | 2010-02-17 | 2011-08-18 | Aixtron Ag, 52134 | Beschichtungsvorrichtung sowie Verfahren zum Betrieb einer Beschichtungsvorrichtung mit einer Schirmplatte |
US20160248049A1 (en) | 2015-02-25 | 2016-08-25 | Samsung Display Co., Ltd. | Deposition apparatus |
Non-Patent Citations (1)
Title |
---|
Transactions on Semiconductor Manufacturing, Vol. 3, NO. 3. August 1990 „Applications of Magnetic Levitation-Based Micro-Automation in Semiconductor Manufacturing" |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113539877A (zh) * | 2021-07-22 | 2021-10-22 | 长鑫存储技术有限公司 | 半导体结构的测量装置及测量方法 |
CN113539877B (zh) * | 2021-07-22 | 2023-10-17 | 长鑫存储技术有限公司 | 半导体结构的测量装置及测量方法 |
Also Published As
Publication number | Publication date |
---|---|
WO2018087029A1 (fr) | 2018-05-17 |
TW201823854A (zh) | 2018-07-01 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
R163 | Identified publications notified | ||
R083 | Amendment of/additions to inventor(s) | ||
R119 | Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee |