DE102014117388A1 - Verfahren zum Kalibrieren einer Pyrometeranordnung eines CVD- oder PVD-Reaktors - Google Patents
Verfahren zum Kalibrieren einer Pyrometeranordnung eines CVD- oder PVD-Reaktors Download PDFInfo
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- DE102014117388A1 DE102014117388A1 DE102014117388.0A DE102014117388A DE102014117388A1 DE 102014117388 A1 DE102014117388 A1 DE 102014117388A1 DE 102014117388 A DE102014117388 A DE 102014117388A DE 102014117388 A1 DE102014117388 A1 DE 102014117388A1
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- pyrometer
- calibration
- temperature
- susceptor
- calibrated
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Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/60—Radiation pyrometry, e.g. infrared or optical thermometry using determination of colour temperature
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/541—Heating or cooling of the substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/52—Radiation pyrometry, e.g. infrared or optical thermometry using comparison with reference sources, e.g. disappearing-filament pyrometer
- G01J5/53—Reference sources, e.g. standard lamps; Black bodies
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/80—Calibration
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Chemical & Material Sciences (AREA)
- Radiation Pyrometers (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102014117388.0A DE102014117388A1 (de) | 2014-11-27 | 2014-11-27 | Verfahren zum Kalibrieren einer Pyrometeranordnung eines CVD- oder PVD-Reaktors |
| PCT/EP2015/077502 WO2016083373A1 (de) | 2014-11-27 | 2015-11-24 | Verfahren zum kalibrieren einer pyrometeranordnung eines cvd- oder pvd-reaktors |
| CN201580073149.5A CN107110709B (zh) | 2014-11-27 | 2015-11-24 | 校准cvd或pvd反应器的高温计装置的方法 |
| TW104139155A TWI680281B (zh) | 2014-11-27 | 2015-11-25 | 校準ｃｖｄ或ｐｖｄ反應器之高溫計配置的方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102014117388.0A DE102014117388A1 (de) | 2014-11-27 | 2014-11-27 | Verfahren zum Kalibrieren einer Pyrometeranordnung eines CVD- oder PVD-Reaktors |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE102014117388A1 true DE102014117388A1 (de) | 2016-06-02 |
Family
ID=54705167
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE102014117388.0A Pending DE102014117388A1 (de) | 2014-11-27 | 2014-11-27 | Verfahren zum Kalibrieren einer Pyrometeranordnung eines CVD- oder PVD-Reaktors |
Country Status (4)
| Country | Link |
|---|---|
| CN (1) | CN107110709B (zh) |
| DE (1) | DE102014117388A1 (zh) |
| TW (1) | TWI680281B (zh) |
| WO (1) | WO2016083373A1 (zh) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102017001394A1 (de) | 2017-02-14 | 2018-08-16 | Wsp Gmbh | Kalibriereinrichtung und Kalibrierverfahren für Strahlungspyrometer in einer Durchlauf-Wärmebehandlungsanlage für Metallbänder |
| DE102019114249A1 (de) | 2018-06-19 | 2019-12-19 | Aixtron Se | Anordnung zum Messen der Oberflächentemperatur eines Suszeptors in einem CVD-Reaktor |
| WO2020188087A3 (de) * | 2019-03-21 | 2020-11-19 | Aixtron Se | Verfahren zur erfassung eines zustandes eines cvd-reaktors unter produktionsbedingungen |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI717176B (zh) * | 2019-12-26 | 2021-01-21 | 陳瑞凱 | 一種高溫磁性溫度計之校正方法 |
| CN112097950B (zh) * | 2020-08-21 | 2022-06-10 | 中国电子科技集团公司第十三研究所 | 基于光热反射的温度测量方法、装置及终端设备 |
| CN113281304B (zh) * | 2021-04-01 | 2023-11-21 | 上海新昇半导体科技有限公司 | 一种退火炉降温速率校准的方法 |
Citations (29)
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|---|---|---|---|---|
| US4222663A (en) | 1977-08-01 | 1980-09-16 | United Technologies Corporation | Optical pyrometer and technique for temperature measurement |
| US4708474A (en) | 1985-11-14 | 1987-11-24 | United Technologies Corporation | Reflection corrected radiosity optical pyrometer |
| EP0317653A1 (en) | 1987-11-23 | 1989-05-31 | Quantum Logic Corporation | Apparatus for remote measurement of temperatures |
| US4979134A (en) | 1988-07-15 | 1990-12-18 | Minolta Camera Kabushiki Kaisha | Method for measuring surface temperature of semiconductor wafer substrate, and heat-treating apparatus |
| US4979133A (en) | 1988-02-08 | 1990-12-18 | Minolta Camera Kabushiki Kaisha | Pyrometer |
| US5249142A (en) | 1989-03-31 | 1993-09-28 | Tokyo Electron Kyushu Limited | Indirect temperature-measurement of films formed on semiconductor wafers |
| EP0490290B1 (en) | 1990-12-07 | 1995-08-16 | AG Processing Technologies, Inc. | Calibration for bichannel radiation detection |
| WO1997011340A1 (en) | 1995-09-06 | 1997-03-27 | 3T True Temperature Technologies | Method and apparatus for true temperature determination |
| EP0801292A2 (en) | 1996-04-08 | 1997-10-15 | Applied Materials, Inc. | Self-calibrating temperature probe |
| WO1998004892A1 (en) | 1996-07-26 | 1998-02-05 | Advanced Micro Devices, Inc. | A rapid thermal anneal system and method including improved temperature sensing and monitoring |
| WO1998053286A1 (en) | 1997-05-22 | 1998-11-26 | Applied Materials, Inc. | Pyrometer calibration using multiple light sources |
| WO1999013304A1 (en) | 1997-09-05 | 1999-03-18 | Advanced Micro Devices, Inc. | Black body reference for rta |
| WO2000054017A1 (en) | 1999-03-08 | 2000-09-14 | C.I. Systems Ltd. | Method and apparatus for active pyrometric measurement of the temperature of a body whose emissivity varies with wavelength |
| US6151446A (en) | 1999-07-06 | 2000-11-21 | Applied Materials, Inc. | Apparatus and method for thermally processing substrates including a processor using multiple detection signals |
| US6379038B1 (en) | 1998-06-22 | 2002-04-30 | Ralph A. Felice | Temperature determining device and process |
| US6398406B1 (en) | 2000-06-01 | 2002-06-04 | Sandia Corporation | Temperature determination using pyrometry |
| US20020066859A1 (en) | 1998-03-19 | 2002-06-06 | Tomomi Ino | Temperature measuring method and apparatus, measuring mehtod for the thickness of the formed film, measuring apparatus for the thickness of the formed film thermometer for wafers |
| US6492625B1 (en) | 2000-09-27 | 2002-12-10 | Emcore Corporation | Apparatus and method for controlling temperature uniformity of substrates |
| WO2004000184A1 (en) | 2002-06-25 | 2003-12-31 | Mcneil-Ppc, Inc. | Compressed absorbent tampon |
| DE102004007984A1 (de) | 2004-02-18 | 2005-09-01 | Aixtron Ag | CVD-Reaktor mit Fotodioden-Array |
| US6963816B1 (en) | 2002-09-04 | 2005-11-08 | The United States Of America As Represented By The United States Department Of Energy | Systems and methods for integrated emissivity and temperature measurement of a surface |
| EP1481117B1 (de) | 2002-02-22 | 2007-10-24 | Aixtron AG | Verfahren und vorrichtung zum abscheiden von halbleiterschichten |
| DE102007023970A1 (de) | 2007-05-23 | 2008-12-04 | Aixtron Ag | Vorrichtung zum Beschichten einer Vielzahl in dichtester Packung auf einem Suszeptor angeordneter Substrate |
| DE102009019572A1 (de) * | 2009-05-02 | 2010-11-25 | Schott Ag | Verfahren und Vorrichtung zur pyrometrischen Strahlungsmessung |
| US8050884B2 (en) * | 2007-12-06 | 2011-11-01 | The Boeing Company | Method and apparatus for determining the emissivity, area and temperature of an object |
| EP2251658B1 (en) | 2009-05-12 | 2012-01-25 | LayTec Aktiengesellschaft | Method for calibrating a pyrometer, method for determining the temperature of a semiconducting wafer and system for determining the temperature of a semiconducting wafer |
| US8296091B2 (en) | 2002-06-24 | 2012-10-23 | Mattson Technology, Inc. | System and process for calibrating pyrometers in thermal processing chambers |
| DE102012101717A1 (de) | 2012-03-01 | 2013-09-05 | Aixtron Se | Verfahren und Vorrichtung zur Regelung der Oberflächentemperatur eines Suszeptors einer Substratbeschichtungseinrichtung |
| US20130294476A1 (en) | 2012-05-04 | 2013-11-07 | Laytec Ag | Flat light emitting plate for simulating thermal radiation, method for calibrating a pyrometer and method for determining the temperature of a semiconducting wafer |
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| CN101906622B (zh) * | 2010-08-20 | 2013-03-20 | 江苏中晟半导体设备有限公司 | 用于mocvd系统中控制外延片温度及均匀性的装置与方法 |
| US8888360B2 (en) * | 2010-12-30 | 2014-11-18 | Veeco Instruments Inc. | Methods and systems for in-situ pyrometer calibration |
| US8967860B2 (en) * | 2011-02-07 | 2015-03-03 | Applied Materials, Inc. | Low temperature measurement and control using low temperature pyrometry |
| CN103628046B (zh) * | 2012-08-24 | 2015-11-11 | 中微半导体设备(上海)有限公司 | 一种调节基片表面温度的控温系统和控温方法 |
| CN103712695B (zh) * | 2012-10-09 | 2016-04-13 | 甘志银 | 化学气相沉积设备的红外辐射测温校准装置及其校准方法 |
| US8970114B2 (en) * | 2013-02-01 | 2015-03-03 | Lam Research Corporation | Temperature controlled window of a plasma processing chamber component |
-
2014
- 2014-11-27 DE DE102014117388.0A patent/DE102014117388A1/de active Pending
-
2015
- 2015-11-24 CN CN201580073149.5A patent/CN107110709B/zh active Active
- 2015-11-24 WO PCT/EP2015/077502 patent/WO2016083373A1/de active Application Filing
- 2015-11-25 TW TW104139155A patent/TWI680281B/zh active
Patent Citations (32)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4222663A (en) | 1977-08-01 | 1980-09-16 | United Technologies Corporation | Optical pyrometer and technique for temperature measurement |
| US4708474A (en) | 1985-11-14 | 1987-11-24 | United Technologies Corporation | Reflection corrected radiosity optical pyrometer |
| EP0317653A1 (en) | 1987-11-23 | 1989-05-31 | Quantum Logic Corporation | Apparatus for remote measurement of temperatures |
| EP0317653B1 (en) * | 1987-11-23 | 1993-09-08 | Quantum Logic Corporation | Apparatus for remote measurement of temperatures |
| US4979133A (en) | 1988-02-08 | 1990-12-18 | Minolta Camera Kabushiki Kaisha | Pyrometer |
| US4979134A (en) | 1988-07-15 | 1990-12-18 | Minolta Camera Kabushiki Kaisha | Method for measuring surface temperature of semiconductor wafer substrate, and heat-treating apparatus |
| US5249142A (en) | 1989-03-31 | 1993-09-28 | Tokyo Electron Kyushu Limited | Indirect temperature-measurement of films formed on semiconductor wafers |
| EP0490290B1 (en) | 1990-12-07 | 1995-08-16 | AG Processing Technologies, Inc. | Calibration for bichannel radiation detection |
| WO1997011340A1 (en) | 1995-09-06 | 1997-03-27 | 3T True Temperature Technologies | Method and apparatus for true temperature determination |
| EP0801292A2 (en) | 1996-04-08 | 1997-10-15 | Applied Materials, Inc. | Self-calibrating temperature probe |
| EP0801292B1 (en) * | 1996-04-08 | 2004-08-25 | Applied Materials, Inc. | Self-calibrating temperature probe |
| WO1998004892A1 (en) | 1996-07-26 | 1998-02-05 | Advanced Micro Devices, Inc. | A rapid thermal anneal system and method including improved temperature sensing and monitoring |
| WO1998053286A1 (en) | 1997-05-22 | 1998-11-26 | Applied Materials, Inc. | Pyrometer calibration using multiple light sources |
| WO1999013304A1 (en) | 1997-09-05 | 1999-03-18 | Advanced Micro Devices, Inc. | Black body reference for rta |
| US20020066859A1 (en) | 1998-03-19 | 2002-06-06 | Tomomi Ino | Temperature measuring method and apparatus, measuring mehtod for the thickness of the formed film, measuring apparatus for the thickness of the formed film thermometer for wafers |
| US6379038B1 (en) | 1998-06-22 | 2002-04-30 | Ralph A. Felice | Temperature determining device and process |
| WO2000054017A1 (en) | 1999-03-08 | 2000-09-14 | C.I. Systems Ltd. | Method and apparatus for active pyrometric measurement of the temperature of a body whose emissivity varies with wavelength |
| US6151446A (en) | 1999-07-06 | 2000-11-21 | Applied Materials, Inc. | Apparatus and method for thermally processing substrates including a processor using multiple detection signals |
| US6398406B1 (en) | 2000-06-01 | 2002-06-04 | Sandia Corporation | Temperature determination using pyrometry |
| US6492625B1 (en) | 2000-09-27 | 2002-12-10 | Emcore Corporation | Apparatus and method for controlling temperature uniformity of substrates |
| EP1481117B1 (de) | 2002-02-22 | 2007-10-24 | Aixtron AG | Verfahren und vorrichtung zum abscheiden von halbleiterschichten |
| US8296091B2 (en) | 2002-06-24 | 2012-10-23 | Mattson Technology, Inc. | System and process for calibrating pyrometers in thermal processing chambers |
| WO2004000184A1 (en) | 2002-06-25 | 2003-12-31 | Mcneil-Ppc, Inc. | Compressed absorbent tampon |
| US6963816B1 (en) | 2002-09-04 | 2005-11-08 | The United States Of America As Represented By The United States Department Of Energy | Systems and methods for integrated emissivity and temperature measurement of a surface |
| DE102004007984A1 (de) | 2004-02-18 | 2005-09-01 | Aixtron Ag | CVD-Reaktor mit Fotodioden-Array |
| DE102007023970A1 (de) | 2007-05-23 | 2008-12-04 | Aixtron Ag | Vorrichtung zum Beschichten einer Vielzahl in dichtester Packung auf einem Suszeptor angeordneter Substrate |
| US8050884B2 (en) * | 2007-12-06 | 2011-11-01 | The Boeing Company | Method and apparatus for determining the emissivity, area and temperature of an object |
| DE102009019572A1 (de) * | 2009-05-02 | 2010-11-25 | Schott Ag | Verfahren und Vorrichtung zur pyrometrischen Strahlungsmessung |
| EP2365307B1 (en) | 2009-05-12 | 2012-07-18 | LayTec Aktiengesellschaft | Method for calibrating a pyrometer, method for determining the temperature of a semiconducting wafer and system for determining the temperature of a semiconducting wafer |
| EP2251658B1 (en) | 2009-05-12 | 2012-01-25 | LayTec Aktiengesellschaft | Method for calibrating a pyrometer, method for determining the temperature of a semiconducting wafer and system for determining the temperature of a semiconducting wafer |
| DE102012101717A1 (de) | 2012-03-01 | 2013-09-05 | Aixtron Se | Verfahren und Vorrichtung zur Regelung der Oberflächentemperatur eines Suszeptors einer Substratbeschichtungseinrichtung |
| US20130294476A1 (en) | 2012-05-04 | 2013-11-07 | Laytec Ag | Flat light emitting plate for simulating thermal radiation, method for calibrating a pyrometer and method for determining the temperature of a semiconducting wafer |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102017001394A1 (de) | 2017-02-14 | 2018-08-16 | Wsp Gmbh | Kalibriereinrichtung und Kalibrierverfahren für Strahlungspyrometer in einer Durchlauf-Wärmebehandlungsanlage für Metallbänder |
| DE102019114249A1 (de) | 2018-06-19 | 2019-12-19 | Aixtron Se | Anordnung zum Messen der Oberflächentemperatur eines Suszeptors in einem CVD-Reaktor |
| WO2019243196A1 (de) | 2018-06-19 | 2019-12-26 | Aixtron Se | Anordnung zum messen der oberflächentemperatur eines suszeptors in einem cvd-reaktor |
| WO2020188087A3 (de) * | 2019-03-21 | 2020-11-19 | Aixtron Se | Verfahren zur erfassung eines zustandes eines cvd-reaktors unter produktionsbedingungen |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI680281B (zh) | 2019-12-21 |
| CN107110709A (zh) | 2017-08-29 |
| CN107110709B (zh) | 2019-10-18 |
| TW201625910A (zh) | 2016-07-16 |
| WO2016083373A1 (de) | 2016-06-02 |
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