DE102011081247A1 - Belichtungsanlage und Verfahren zur strukturierten Belichtung einer lichtempfindlichen Schicht - Google Patents

Belichtungsanlage und Verfahren zur strukturierten Belichtung einer lichtempfindlichen Schicht Download PDF

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Publication number
DE102011081247A1
DE102011081247A1 DE201110081247 DE102011081247A DE102011081247A1 DE 102011081247 A1 DE102011081247 A1 DE 102011081247A1 DE 201110081247 DE201110081247 DE 201110081247 DE 102011081247 A DE102011081247 A DE 102011081247A DE 102011081247 A1 DE102011081247 A1 DE 102011081247A1
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DE
Germany
Prior art keywords
exposure
photosensitive layer
state
beams
intensity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE201110081247
Other languages
German (de)
English (en)
Inventor
Damian Fiolka
Jürgen Baier
Michael Totzeck
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Carl Zeiss SMT GmbH
Original Assignee
Carl Zeiss SMT GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Carl Zeiss SMT GmbH filed Critical Carl Zeiss SMT GmbH
Priority to DE201110081247 priority Critical patent/DE102011081247A1/de
Priority to CN201280050997.0A priority patent/CN103890565B/zh
Priority to PCT/EP2012/065930 priority patent/WO2013026750A1/en
Priority to KR1020147007149A priority patent/KR101986394B1/ko
Priority to JP2014525439A priority patent/JP6086503B2/ja
Publication of DE102011081247A1 publication Critical patent/DE102011081247A1/de
Withdrawn legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70375—Multiphoton lithography or multiphoton photopolymerization; Imaging systems comprising means for converting one type of radiation into another type of radiation
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70383—Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams
    • G03F7/70391—Addressable array sources specially adapted to produce patterns, e.g. addressable LED arrays
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70383—Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams
    • G03F7/704—Scanned exposure beam, e.g. raster-, rotary- and vector scanning

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
DE201110081247 2011-08-19 2011-08-19 Belichtungsanlage und Verfahren zur strukturierten Belichtung einer lichtempfindlichen Schicht Withdrawn DE102011081247A1 (de)

Priority Applications (5)

Application Number Priority Date Filing Date Title
DE201110081247 DE102011081247A1 (de) 2011-08-19 2011-08-19 Belichtungsanlage und Verfahren zur strukturierten Belichtung einer lichtempfindlichen Schicht
CN201280050997.0A CN103890565B (zh) 2011-08-19 2012-08-15 用于光敏层的图案化曝光的曝光设备和方法
PCT/EP2012/065930 WO2013026750A1 (en) 2011-08-19 2012-08-15 Exposure apparatus and method for the patterned exposure of a light-sensitive layer
KR1020147007149A KR101986394B1 (ko) 2011-08-19 2012-08-15 감광성 층의 패터닝된 노광을 위한 노광 장치 및 방법
JP2014525439A JP6086503B2 (ja) 2011-08-19 2012-08-15 感光層のパターン付き露光のための露光装置及び方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE201110081247 DE102011081247A1 (de) 2011-08-19 2011-08-19 Belichtungsanlage und Verfahren zur strukturierten Belichtung einer lichtempfindlichen Schicht

Publications (1)

Publication Number Publication Date
DE102011081247A1 true DE102011081247A1 (de) 2013-02-21

Family

ID=47625150

Family Applications (1)

Application Number Title Priority Date Filing Date
DE201110081247 Withdrawn DE102011081247A1 (de) 2011-08-19 2011-08-19 Belichtungsanlage und Verfahren zur strukturierten Belichtung einer lichtempfindlichen Schicht

Country Status (5)

Country Link
JP (1) JP6086503B2 (ko)
KR (1) KR101986394B1 (ko)
CN (1) CN103890565B (ko)
DE (1) DE102011081247A1 (ko)
WO (1) WO2013026750A1 (ko)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102028712B1 (ko) * 2015-04-10 2019-10-04 에이에스엠엘 네델란즈 비.브이. 검사와 계측을 위한 방법 및 장치
WO2018001747A1 (en) * 2016-07-01 2018-01-04 Asml Netherlands B.V. Illumination system for a lithographic or inspection apparatus
CN106919008A (zh) * 2017-04-25 2017-07-04 昆山国显光电有限公司 曝光机及曝光系统
WO2019080820A1 (zh) * 2017-10-23 2019-05-02 上海必修福企业管理有限公司 一种光刻方法、光刻产品和光刻材料
CN109283805A (zh) * 2018-11-29 2019-01-29 暨南大学 基于达曼光栅的激光直写装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19626176A1 (de) * 1996-06-29 1998-01-08 Deutsche Forsch Luft Raumfahrt Lithographie-Belichtungseinrichtung und Lithographie-Verfahren
US20060044985A1 (en) 2003-04-13 2006-03-02 Stefan Hell Creating a permanet structure with high spatial resolution
US7425713B2 (en) 2005-01-14 2008-09-16 Arradiance, Inc. Synchronous raster scanning lithographic system

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Publication number Priority date Publication date Assignee Title
EP0558781B1 (en) * 1992-03-05 1998-08-05 Micronic Laser Systems Ab Method and apparatus for exposure of substrates
US5866911A (en) * 1994-07-15 1999-02-02 Baer; Stephen C. Method and apparatus for improving resolution in scanned optical system
JPH11149663A (ja) * 1997-11-14 1999-06-02 Toshiba Corp 記録媒体及び記録方法及びこれを用いた記録装置
WO2003040830A2 (en) * 2001-11-07 2003-05-15 Applied Materials, Inc. Optical spot grid array printer
JP4201178B2 (ja) * 2002-05-30 2008-12-24 大日本スクリーン製造株式会社 画像記録装置
WO2004090950A2 (de) * 2003-04-13 2004-10-21 MAX-PLANCK-Gesellschaft zur Förderung der Wissenschaften e.V. Räumlich hochauflelöstes erzeugen einer dauerhaften struktur
US7714988B2 (en) * 2005-02-17 2010-05-11 Massachusetts Institute Of Technology System and method for absorbance modulation lithography
EP1974243A1 (en) * 2006-01-13 2008-10-01 Massachusetts Institute of Technology System and method for absorbance modulation lithography
DE102006039760A1 (de) * 2006-08-24 2008-03-13 Carl Zeiss Smt Ag Beleuchtungssystem mit einem Detektor zur Aufnahme einer Lichtintensität
WO2008101664A1 (en) * 2007-02-20 2008-08-28 Carl Zeiss Smt Ag Optical element with multiple primary light sources
DE102008002749A1 (de) * 2008-06-27 2009-12-31 Carl Zeiss Smt Ag Beleuchtungsoptik für die Mikrolithografie

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19626176A1 (de) * 1996-06-29 1998-01-08 Deutsche Forsch Luft Raumfahrt Lithographie-Belichtungseinrichtung und Lithographie-Verfahren
US20060044985A1 (en) 2003-04-13 2006-03-02 Stefan Hell Creating a permanet structure with high spatial resolution
US7425713B2 (en) 2005-01-14 2008-09-16 Arradiance, Inc. Synchronous raster scanning lithographic system

Non-Patent Citations (7)

* Cited by examiner, † Cited by third party
Title
"Near-Field Lithography as Prototype Nano-Fabrication Tool", Microelectronic Engineering 84 (2007) 705-710 von Yasuhisa Inao et al.
"Super-resolution near-field lithography using planar silver lenses" von David O. S. Melville et al. (Invited Poster, MNE-2005 ID 00709, "http://www.mne05.org/3-c_01.pdf")
Blaikie, R.J. et al.: "Imaging through planar silver lenses in the optical near field", J. Opt. A: Pure Appl. Opt. 7, S.176-S.183 (2005) *
Blaikie, R.J. et al.: „Imaging through planar silver lenses in the optical near field", J. Opt. A: Pure Appl. Opt. 7, S.176-S.183 (2005)
http://en.wikipedia.org/wiki/Surface_Plasmon
http://www.lgblog.de/2009/06/15/kleinstes-lcd-display-der-welt-mit-vga-auflosung/
http://www.mpibpc.mpg.de/groups/hell/STED_Dyes.html

Also Published As

Publication number Publication date
KR101986394B1 (ko) 2019-06-05
CN103890565A (zh) 2014-06-25
JP2014526152A (ja) 2014-10-02
CN103890565B (zh) 2016-11-09
KR20140056346A (ko) 2014-05-09
JP6086503B2 (ja) 2017-03-01
WO2013026750A1 (en) 2013-02-28

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Effective date: 20141002