DE102011078928A1 - Beleuchtungsoptik für die Projektionslithografie - Google Patents

Beleuchtungsoptik für die Projektionslithografie Download PDF

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Publication number
DE102011078928A1
DE102011078928A1 DE102011078928A DE102011078928A DE102011078928A1 DE 102011078928 A1 DE102011078928 A1 DE 102011078928A1 DE 102011078928 A DE102011078928 A DE 102011078928A DE 102011078928 A DE102011078928 A DE 102011078928A DE 102011078928 A1 DE102011078928 A1 DE 102011078928A1
Authority
DE
Germany
Prior art keywords
mirror
illumination
polarization
support frame
mirror device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE102011078928A
Other languages
German (de)
English (en)
Inventor
Christoph Hennerkes
Ingo Sänger
Jörg Zimmermann
Johannes Ruoff
Martin Meier
Frank Schlesener
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Carl Zeiss SMT GmbH
Original Assignee
Carl Zeiss SMT GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Carl Zeiss SMT GmbH filed Critical Carl Zeiss SMT GmbH
Priority to DE102011078928A priority Critical patent/DE102011078928A1/de
Priority to TW101124746A priority patent/TWI574115B/zh
Priority to PCT/EP2012/063520 priority patent/WO2013007731A1/en
Priority to JP2014519525A priority patent/JP2014523136A/ja
Publication of DE102011078928A1 publication Critical patent/DE102011078928A1/de
Priority to US14/135,540 priority patent/US9507269B2/en
Withdrawn legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70191—Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G03F7/70108—Off-axis setting using a light-guiding element, e.g. diffractive optical elements [DOEs] or light guides
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B17/00—Systems with reflecting surfaces, with or without refracting elements
    • G02B17/02—Catoptric systems, e.g. image erecting and reversing system
    • G02B17/06—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
    • G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
    • G02B26/0816—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B7/00—Mountings, adjusting means, or light-tight connections, for optical elements
    • G02B7/18—Mountings, adjusting means, or light-tight connections, for optical elements for prisms; for mirrors
    • G02B7/181—Mountings, adjusting means, or light-tight connections, for optical elements for prisms; for mirrors with means for compensating for changes in temperature or for controlling the temperature; thermal stabilisation
    • G02B7/1815—Mountings, adjusting means, or light-tight connections, for optical elements for prisms; for mirrors with means for compensating for changes in temperature or for controlling the temperature; thermal stabilisation with cooling or heating systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G03F7/70116—Off-axis setting using a programmable means, e.g. liquid crystal display [LCD], digital micromirror device [DMD] or pupil facets
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70883—Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
    • G03F7/70891—Temperature

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Optics & Photonics (AREA)
  • Toxicology (AREA)
  • Atmospheric Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
DE102011078928A 2011-07-11 2011-07-11 Beleuchtungsoptik für die Projektionslithografie Withdrawn DE102011078928A1 (de)

Priority Applications (5)

Application Number Priority Date Filing Date Title
DE102011078928A DE102011078928A1 (de) 2011-07-11 2011-07-11 Beleuchtungsoptik für die Projektionslithografie
TW101124746A TWI574115B (zh) 2011-07-11 2012-07-10 用於投射微影之照射光學單元
PCT/EP2012/063520 WO2013007731A1 (en) 2011-07-11 2012-07-11 Illumination optical unit for projection lithography
JP2014519525A JP2014523136A (ja) 2011-07-11 2012-07-11 投影リソグラフィのための照明光学ユニット
US14/135,540 US9507269B2 (en) 2011-07-11 2013-12-19 Illumination optical unit for projection lithography

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102011078928A DE102011078928A1 (de) 2011-07-11 2011-07-11 Beleuchtungsoptik für die Projektionslithografie

Publications (1)

Publication Number Publication Date
DE102011078928A1 true DE102011078928A1 (de) 2013-01-17

Family

ID=47425403

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102011078928A Withdrawn DE102011078928A1 (de) 2011-07-11 2011-07-11 Beleuchtungsoptik für die Projektionslithografie

Country Status (5)

Country Link
US (1) US9507269B2 (https=)
JP (1) JP2014523136A (https=)
DE (1) DE102011078928A1 (https=)
TW (1) TWI574115B (https=)
WO (1) WO2013007731A1 (https=)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102013200394A1 (de) * 2013-01-14 2014-07-17 Carl Zeiss Smt Gmbh Polarisationsmessvorrichtung, Lithographieanlage, Messanordnung, und Verfahren zur Polarisationsmessung
DE102014204818A1 (de) * 2014-03-14 2015-09-17 Carl Zeiss Smt Gmbh Optisches Bauelement
US9817317B2 (en) 2012-04-16 2017-11-14 Carl Zeiss Smt Gmbh Optical system of a microlithographic projection exposure apparatus

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20190017878A1 (en) * 2017-07-12 2019-01-17 Radiant Innovation Inc. Non-contact temperature measuring device
DE102019200193B3 (de) 2019-01-09 2020-02-06 Carl Zeiss Smt Gmbh Optisches System für eine Projektionsbelichtungsanlage
US12399431B2 (en) * 2021-11-15 2025-08-26 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor processing tool and methods of operation
CN117471633B (zh) * 2023-10-17 2025-09-30 中国科学院合肥物质科学研究院 一种红外激光光学镜的调节机构

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5452054A (en) * 1993-03-01 1995-09-19 General Signal Corporation Variable annular illuminator for photolithographic projection imager
US5504627A (en) * 1992-10-20 1996-04-02 Samsung Electronics Co., Ltd. Projection exposure system
WO2006111319A2 (en) 2005-04-20 2006-10-26 Carl Zeiss Smt Ag Projection exposure system, method for manufacturing a micro-structured structural member by the aid of such a projection exposure system and polarization-optical element adapted for use in such a system
US20070132977A1 (en) * 2005-02-03 2007-06-14 Nikon Corporation Optical integrator, illumination optical device, exposure device, and exposure method
US7414781B2 (en) 2005-09-13 2008-08-19 Carl Zeiss Smt Ag Catoptric objectives and systems using catoptric objectives
DE102009029103A1 (de) 2008-11-20 2010-05-27 Carl Zeiss Smt Ag Beleuchtungseinrichtung für eine Mikrolithographische Projektionsbelichtungsanlage

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2866267B2 (ja) 1992-12-11 1999-03-08 三菱電機株式会社 光描画装置およびウェハ基板の光描画方法
US6573978B1 (en) * 1999-01-26 2003-06-03 Mcguire, Jr. James P. EUV condenser with non-imaging optics
US20050099611A1 (en) * 2002-06-20 2005-05-12 Nikon Corporation Minimizing thermal distortion effects on EUV mirror
JP2005303084A (ja) * 2004-04-13 2005-10-27 Nikon Corp 露光装置、露光装置の製造方法、露光装置の調整方法及びマイクロデバイスの製造方法
WO2005109104A2 (en) 2004-05-06 2005-11-17 Carl Zeiss Laser Optics Gmbh Optical component having an improved thermal behavior
JP5053543B2 (ja) 2005-02-02 2012-10-17 東ソー株式会社 タンタル化合物、その製造方法、タンタル含有薄膜、及びその形成方法
US7591561B2 (en) * 2005-10-13 2009-09-22 Nikon Corporation Liquid cooled mirror for use in extreme ultraviolet lithography
DE102006039655A1 (de) * 2006-08-24 2008-03-20 Carl Zeiss Smt Ag Beleuchtungssystem für eine Mikrolithographie-Projektionsbelichtungsanlage, Projektionsbelichtungsanlage mit einem derartigen Beleuchtungssystem, Verfahren zur Herstellung eines mikrostruktuierten Bauelements mit einer derartigen Projektionsbelichtungsanlage sowie durch dieses Verfahren hergestelltes mikrostrukturiertes Bauelement
DE102008021833B4 (de) 2007-12-19 2010-04-22 Carl Zeiss Smt Ag Verfahren zur Einstellung einer Beleuchtungswinkelverteilung und gleichzeitig einer Intensitätsverteilung über ein in ein Bildfeld abzubildendes Objektfeld
EP2243047B1 (en) 2008-02-15 2021-03-31 Carl Zeiss SMT GmbH Facet mirror for use in a projection exposure apparatus for microlithography
DE102012203950A1 (de) * 2012-03-14 2013-09-19 Carl Zeiss Smt Gmbh Beleuchtungsoptik für eine Projektionsbelichtungsanlage
DE102012209132A1 (de) * 2012-05-31 2013-12-05 Carl Zeiss Smt Gmbh Beleuchtungsoptik für die Projektionslithographie

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5504627A (en) * 1992-10-20 1996-04-02 Samsung Electronics Co., Ltd. Projection exposure system
US5452054A (en) * 1993-03-01 1995-09-19 General Signal Corporation Variable annular illuminator for photolithographic projection imager
US20070132977A1 (en) * 2005-02-03 2007-06-14 Nikon Corporation Optical integrator, illumination optical device, exposure device, and exposure method
WO2006111319A2 (en) 2005-04-20 2006-10-26 Carl Zeiss Smt Ag Projection exposure system, method for manufacturing a micro-structured structural member by the aid of such a projection exposure system and polarization-optical element adapted for use in such a system
US20080192225A1 (en) 2005-04-20 2008-08-14 Carl Zeiss Smt Ag Projection Exposure System, Method For Manufacturing a Micro-Structured Structural Member by the Aid of Such a Projection Exposure System and Polarization-Optical Element Adapted for Use in Such a System
US7414781B2 (en) 2005-09-13 2008-08-19 Carl Zeiss Smt Ag Catoptric objectives and systems using catoptric objectives
DE102009029103A1 (de) 2008-11-20 2010-05-27 Carl Zeiss Smt Ag Beleuchtungseinrichtung für eine Mikrolithographische Projektionsbelichtungsanlage

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9817317B2 (en) 2012-04-16 2017-11-14 Carl Zeiss Smt Gmbh Optical system of a microlithographic projection exposure apparatus
DE102013200394A1 (de) * 2013-01-14 2014-07-17 Carl Zeiss Smt Gmbh Polarisationsmessvorrichtung, Lithographieanlage, Messanordnung, und Verfahren zur Polarisationsmessung
US10041836B2 (en) 2013-01-14 2018-08-07 Carl Zeiss Smt Gmbh Polarization measuring device, lithography apparatus, measuring arrangement, and method for polarization measurement
DE102014204818A1 (de) * 2014-03-14 2015-09-17 Carl Zeiss Smt Gmbh Optisches Bauelement
US10133183B2 (en) 2014-03-14 2018-11-20 Carl Zeiss Smt Gmbh Optical component

Also Published As

Publication number Publication date
WO2013007731A1 (en) 2013-01-17
US20140111785A1 (en) 2014-04-24
JP2014523136A (ja) 2014-09-08
US9507269B2 (en) 2016-11-29
TWI574115B (zh) 2017-03-11
TW201321902A (zh) 2013-06-01

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Legal Events

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R012 Request for examination validly filed
R120 Application withdrawn or ip right abandoned

Effective date: 20140521