DE102010036752B4 - Vorrichtung zur Reduzierung eines thermischen Verstärkungsgradkoeffizienten einer Photodiode - Google Patents

Vorrichtung zur Reduzierung eines thermischen Verstärkungsgradkoeffizienten einer Photodiode Download PDF

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Publication number
DE102010036752B4
DE102010036752B4 DE102010036752.4A DE102010036752A DE102010036752B4 DE 102010036752 B4 DE102010036752 B4 DE 102010036752B4 DE 102010036752 A DE102010036752 A DE 102010036752A DE 102010036752 B4 DE102010036752 B4 DE 102010036752B4
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Germany
Prior art keywords
photodiode
thickness
layer
base material
diffusion length
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Expired - Fee Related
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DE102010036752.4A
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German (de)
English (en)
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DE102010036752A1 (de
Inventor
Wen Li
Jonathan David Short
George Edward Possin
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General Electric Co
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General Electric Co
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Publication of DE102010036752A1 publication Critical patent/DE102010036752A1/de
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    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
    • A61B6/00—Apparatus or devices for radiation diagnosis; Apparatus or devices for radiation diagnosis combined with radiation therapy equipment
    • A61B6/02—Arrangements for diagnosis sequentially in different planes; Stereoscopic radiation diagnosis
    • A61B6/03—Computed tomography [CT]
    • A61B6/032—Transmission computed tomography [CT]
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/20—Measuring radiation intensity with scintillation detectors
    • G01T1/2018—Scintillation-photodiode combinations
    • G01T1/20183—Arrangements for preventing or correcting crosstalk, e.g. optical or electrical arrangements for correcting crosstalk
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/20—Measuring radiation intensity with scintillation detectors
    • G01T1/2018—Scintillation-photodiode combinations
    • G01T1/20185—Coupling means between the photodiode and the scintillator, e.g. optical couplings using adhesives with wavelength-shifting fibres
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/24—Measuring radiation intensity with semiconductor detectors
    • G01T1/249—Measuring radiation intensity with semiconductor detectors specially adapted for use in SPECT or PET
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/223—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PIN barrier
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors

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  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Molecular Biology (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Medical Informatics (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • Surgery (AREA)
  • Theoretical Computer Science (AREA)
  • Pulmonology (AREA)
  • Optics & Photonics (AREA)
  • Pathology (AREA)
  • Radiology & Medical Imaging (AREA)
  • Biomedical Technology (AREA)
  • Heart & Thoracic Surgery (AREA)
  • Biophysics (AREA)
  • Animal Behavior & Ethology (AREA)
  • General Health & Medical Sciences (AREA)
  • Public Health (AREA)
  • Veterinary Medicine (AREA)
  • Measurement Of Radiation (AREA)
  • Light Receiving Elements (AREA)
  • Apparatus For Radiation Diagnosis (AREA)
  • Solid State Image Pick-Up Elements (AREA)
DE102010036752.4A 2009-07-30 2010-07-29 Vorrichtung zur Reduzierung eines thermischen Verstärkungsgradkoeffizienten einer Photodiode Expired - Fee Related DE102010036752B4 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/512,714 US8409908B2 (en) 2009-07-30 2009-07-30 Apparatus for reducing photodiode thermal gain coefficient and method of making same
US12/512,714 2009-07-30

Publications (2)

Publication Number Publication Date
DE102010036752A1 DE102010036752A1 (de) 2011-02-03
DE102010036752B4 true DE102010036752B4 (de) 2016-06-16

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DE102010036752.4A Expired - Fee Related DE102010036752B4 (de) 2009-07-30 2010-07-29 Vorrichtung zur Reduzierung eines thermischen Verstärkungsgradkoeffizienten einer Photodiode

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Country Link
US (2) US8409908B2 (enExample)
JP (1) JP5639809B2 (enExample)
DE (1) DE102010036752B4 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6037405A (en) * 1995-12-25 2000-03-14 Sakata Inx Corp. Pigment dispersion and offset printing ink composition using the same
US8736008B2 (en) 2012-01-04 2014-05-27 General Electric Company Photodiode array and methods of fabrication
US9935152B2 (en) 2012-12-27 2018-04-03 General Electric Company X-ray detector having improved noise performance
US9285489B2 (en) 2013-08-29 2016-03-15 General Electric Company Organic x-ray detector assembly and method of manufacturing same
US9917133B2 (en) 2013-12-12 2018-03-13 General Electric Company Optoelectronic device with flexible substrate
WO2015138329A1 (en) 2014-03-13 2015-09-17 General Electric Company Curved digital x-ray detector for weld inspection
JP6671839B2 (ja) * 2014-10-07 2020-03-25 キヤノン株式会社 放射線撮像装置及び撮像システム
JP6691783B2 (ja) * 2016-01-20 2020-05-13 キヤノンメディカルシステムズ株式会社 Ｘ線検出器及びｘ線ｃｔ装置
CN115589774B (zh) * 2022-12-08 2023-03-10 西安电子科技大学杭州研究院 一种光控电容型铁电存储器及其制备方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6707046B2 (en) * 2002-01-03 2004-03-16 General Electric Company Optimized scintillator and pixilated photodiode detector array for multi-slice CT x-ray detector using backside illumination

Family Cites Families (14)

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Publication number Priority date Publication date Assignee Title
US4686554A (en) * 1983-07-02 1987-08-11 Canon Kabushiki Kaisha Photoelectric converter
US5583352A (en) * 1994-04-29 1996-12-10 Eg&G Limited Low-noise, reach-through, avalanche photodiodes
US5808329A (en) * 1996-07-15 1998-09-15 Raytheon Company Low light level imager with extended wavelength response employing atomic bonded (fused) semiconductor materials
JP2001067565A (ja) * 1999-08-26 2001-03-16 Matsushita Electric Works Ltd 光電式煙感知器
WO2001082360A1 (en) * 2000-04-20 2001-11-01 Digirad Corporation Technique for suppression of edge current in semiconductor devices
US6670258B2 (en) * 2000-04-20 2003-12-30 Digirad Corporation Fabrication of low leakage-current backside illuminated photodiodes
US7045833B2 (en) * 2000-09-29 2006-05-16 Board Of Regents, The University Of Texas System Avalanche photodiodes with an impact-ionization-engineered multiplication region
US6426991B1 (en) * 2000-11-16 2002-07-30 Koninklijke Philips Electronics N.V. Back-illuminated photodiodes for computed tomography detectors
JP3782008B2 (ja) * 2001-12-26 2006-06-07 シャープ株式会社 受光アンプ回路
US6933489B2 (en) * 2002-05-10 2005-08-23 Hamamatsu Photonics K.K. Back illuminated photodiode array and method of manufacturing the same
JP4153252B2 (ja) * 2002-07-11 2008-09-24 浜松ホトニクス株式会社 ホトダイオード
US6762473B1 (en) * 2003-06-25 2004-07-13 Semicoa Semiconductors Ultra thin back-illuminated photodiode array structures and fabrication methods
US7834422B2 (en) * 2004-05-18 2010-11-16 Qucor Pty. Ltd. Implanted counted dopant ions
JP4696631B2 (ja) * 2005-03-25 2011-06-08 Ｔｄｋ株式会社 光電流増幅回路

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6707046B2 (en) * 2002-01-03 2004-03-16 General Electric Company Optimized scintillator and pixilated photodiode detector array for multi-slice CT x-ray detector using backside illumination

Also Published As

Publication number Publication date
DE102010036752A1 (de) 2011-02-03
US20130230134A1 (en) 2013-09-05
US20110024711A1 (en) 2011-02-03
JP5639809B2 (ja) 2014-12-10
US8409908B2 (en) 2013-04-02
JP2011033624A (ja) 2011-02-17
US8564086B2 (en) 2013-10-22

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