DE102009051862A1 - Speichervorrichtung und Speicherverfahren - Google Patents

Speichervorrichtung und Speicherverfahren Download PDF

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Publication number
DE102009051862A1
DE102009051862A1 DE102009051862A DE102009051862A DE102009051862A1 DE 102009051862 A1 DE102009051862 A1 DE 102009051862A1 DE 102009051862 A DE102009051862 A DE 102009051862A DE 102009051862 A DE102009051862 A DE 102009051862A DE 102009051862 A1 DE102009051862 A1 DE 102009051862A1
Authority
DE
Germany
Prior art keywords
memory
memory page
page
free
block
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE102009051862A
Other languages
German (de)
English (en)
Inventor
Hisham Chowdhury
Joseph Edgington
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Micron Technology Inc
Original Assignee
Chowdhury Hisham Fair Oaks
Edgington Joseph Sacramento
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Chowdhury Hisham Fair Oaks, Edgington Joseph Sacramento filed Critical Chowdhury Hisham Fair Oaks
Publication of DE102009051862A1 publication Critical patent/DE102009051862A1/de
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02—Addressing or allocation; Relocation
    • G06F12/0223—User address space allocation, e.g. contiguous or non contiguous base addressing
    • G06F12/023—Free address space management
    • G06F12/0238—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory
    • G06F12/0246—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory in block erasable memory, e.g. flash memory
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02—Addressing or allocation; Relocation
    • G06F12/08—Addressing or allocation; Relocation in hierarchically structured memory systems, e.g. virtual memory systems
    • G06F12/10—Address translation
    • G06F12/1009—Address translation using page tables, e.g. page table structures
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601—Interfaces specially adapted for storage systems
    • G06F3/0628—Interfaces specially adapted for storage systems making use of a particular technique
    • G06F3/0638—Organizing or formatting or addressing of data
    • G06F3/064—Management of blocks
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601—Interfaces specially adapted for storage systems
    • G06F3/0668—Interfaces specially adapted for storage systems adopting a particular infrastructure
    • G06F3/0671—In-line storage system
    • G06F3/0673—Single storage device
    • G06F3/0679—Non-volatile semiconductor memory device, e.g. flash memory, one time programmable memory [OTP]
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/102—External programming circuits, e.g. EPROM programmers; In-circuit programming or reprogramming; EPROM emulators
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
    • G06F2212/72—Details relating to flash memory management
    • G06F2212/7202—Allocation control and policies
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
    • G06F2212/72—Details relating to flash memory management
    • G06F2212/7209—Validity control, e.g. using flags, time stamps or sequence numbers

Landscapes

  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Human Computer Interaction (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Memory System (AREA)
DE102009051862A 2008-12-31 2009-11-04 Speichervorrichtung und Speicherverfahren Withdrawn DE102009051862A1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/347,935 2008-12-31
US12/347,935 US9612954B2 (en) 2008-12-31 2008-12-31 Recovery for non-volatile memory after power loss

Publications (1)

Publication Number Publication Date
DE102009051862A1 true DE102009051862A1 (de) 2010-07-01

Family

ID=42221053

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102009051862A Withdrawn DE102009051862A1 (de) 2008-12-31 2009-11-04 Speichervorrichtung und Speicherverfahren

Country Status (6)

Country Link
US (2) US9612954B2 (https=)
JP (1) JP5528782B2 (https=)
KR (1) KR101613678B1 (https=)
CN (1) CN101770809B (https=)
DE (1) DE102009051862A1 (https=)
SG (2) SG196777A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9612954B2 (en) 2008-12-31 2017-04-04 Micron Technology, Inc. Recovery for non-volatile memory after power loss

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US9904688B2 (en) * 2014-09-30 2018-02-27 International Business Machines Corporation Buffering and replicating data written to a distributed storage system
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TWI718975B (zh) * 2020-07-17 2021-02-11 汎思數據股份有限公司 提高記憶體資料讀寫速度的方法及裝置
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9612954B2 (en) 2008-12-31 2017-04-04 Micron Technology, Inc. Recovery for non-volatile memory after power loss
US10552311B2 (en) 2008-12-31 2020-02-04 Micron Technology, Inc. Recovery for non-volatile memory after power loss

Also Published As

Publication number Publication date
CN101770809B (zh) 2014-03-26
US9612954B2 (en) 2017-04-04
SG162655A1 (en) 2010-07-29
US10552311B2 (en) 2020-02-04
CN101770809A (zh) 2010-07-07
JP2010157216A (ja) 2010-07-15
US20170206157A1 (en) 2017-07-20
US20100169543A1 (en) 2010-07-01
SG196777A1 (en) 2014-02-13
KR20100080350A (ko) 2010-07-08
KR101613678B1 (ko) 2016-04-19
JP5528782B2 (ja) 2014-06-25

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Owner name: NUMONYX B.V., ROLLE, CH

8181 Inventor (new situation)

Inventor name: EDGINGTON, JOSEPH, SACRAMENTO, CALIF., US

Inventor name: CHOWDHURY, HISHAM, FAIR OAKS, CALIF., US

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Owner name: MICRON TECHNOLOGY, INC., BOISE, US

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