DE102009018112B3 - Verfahren zur Herstellung eines Halbleiterbauelementes, insbesondere einer Solarzelle, mit einer lokal geöffneten Dielektrikumschicht sowie entsprechendes Halbleiterbauelement - Google Patents
Verfahren zur Herstellung eines Halbleiterbauelementes, insbesondere einer Solarzelle, mit einer lokal geöffneten Dielektrikumschicht sowie entsprechendes Halbleiterbauelement Download PDFInfo
- Publication number
- DE102009018112B3 DE102009018112B3 DE102009018112A DE102009018112A DE102009018112B3 DE 102009018112 B3 DE102009018112 B3 DE 102009018112B3 DE 102009018112 A DE102009018112 A DE 102009018112A DE 102009018112 A DE102009018112 A DE 102009018112A DE 102009018112 B3 DE102009018112 B3 DE 102009018112B3
- Authority
- DE
- Germany
- Prior art keywords
- layer
- amorphous silicon
- silicon substrate
- laser light
- dielectric layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 26
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 20
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 74
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 58
- 239000010703 silicon Substances 0.000 claims abstract description 58
- 239000000758 substrate Substances 0.000 claims abstract description 57
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 56
- 238000002679 ablation Methods 0.000 claims abstract description 31
- 238000000034 method Methods 0.000 claims abstract description 21
- 230000001678 irradiating effect Effects 0.000 claims abstract 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 21
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 21
- 238000010521 absorption reaction Methods 0.000 claims description 8
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 7
- 229910052739 hydrogen Inorganic materials 0.000 claims description 7
- 239000001257 hydrogen Substances 0.000 claims description 7
- 238000000137 annealing Methods 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 3
- 230000008020 evaporation Effects 0.000 abstract description 4
- 238000001704 evaporation Methods 0.000 abstract description 4
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 238000002161 passivation Methods 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000010292 electrical insulation Methods 0.000 description 2
- 150000003376 silicon Chemical class 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- 238000005496 tempering Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- 230000002745 absorbent Effects 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000009172 bursting Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000009738 saturating Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000002966 varnish Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/361—Removing material for deburring or mechanical trimming
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/40—Removing material taking account of the properties of the material involved
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/16—Composite materials, e.g. fibre reinforced
- B23K2103/166—Multilayered materials
- B23K2103/172—Multilayered materials wherein at least one of the layers is non-metallic
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Energy (AREA)
- Sustainable Development (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
- Drying Of Semiconductors (AREA)
- Laser Beam Processing (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102009018112A DE102009018112B3 (de) | 2009-04-20 | 2009-04-20 | Verfahren zur Herstellung eines Halbleiterbauelementes, insbesondere einer Solarzelle, mit einer lokal geöffneten Dielektrikumschicht sowie entsprechendes Halbleiterbauelement |
| CN2010800176371A CN102405528A (zh) | 2009-04-20 | 2010-04-20 | 一种用于制备具有局部开口的电介质层的半导体装置特别是太阳能电池的方法以及相应的半导体装置 |
| PCT/EP2010/055210 WO2010122028A2 (fr) | 2009-04-20 | 2010-04-20 | Procédé de fabrication d'un dispositif à semi-conducteurs, en particulier d'une cellule solaire, avec une couche diélectrique localement ouverte ainsi que dispositif à semi-conducteurs correspondant |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102009018112A DE102009018112B3 (de) | 2009-04-20 | 2009-04-20 | Verfahren zur Herstellung eines Halbleiterbauelementes, insbesondere einer Solarzelle, mit einer lokal geöffneten Dielektrikumschicht sowie entsprechendes Halbleiterbauelement |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE102009018112B3 true DE102009018112B3 (de) | 2010-12-16 |
Family
ID=43011529
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE102009018112A Expired - Fee Related DE102009018112B3 (de) | 2009-04-20 | 2009-04-20 | Verfahren zur Herstellung eines Halbleiterbauelementes, insbesondere einer Solarzelle, mit einer lokal geöffneten Dielektrikumschicht sowie entsprechendes Halbleiterbauelement |
Country Status (3)
| Country | Link |
|---|---|
| CN (1) | CN102405528A (fr) |
| DE (1) | DE102009018112B3 (fr) |
| WO (1) | WO2010122028A2 (fr) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2012092537A2 (fr) | 2010-12-30 | 2012-07-05 | Solexel, Inc. | Procédés de traitement au laser pour cellules solaires photovoltaïques |
| EP2903030A1 (fr) * | 2014-01-29 | 2015-08-05 | LG Electronics Inc. | Cellule solaire et son procédé de fabrication |
| US9236510B2 (en) | 2004-11-30 | 2016-01-12 | Solexel, Inc. | Patterning of silicon oxide layers using pulsed laser ablation |
| US9419165B2 (en) | 2006-10-09 | 2016-08-16 | Solexel, Inc. | Laser processing for high-efficiency thin crystalline silicon solar cell fabrication |
| US9455362B2 (en) | 2007-10-06 | 2016-09-27 | Solexel, Inc. | Laser irradiation aluminum doping for monocrystalline silicon substrates |
| US9508886B2 (en) | 2007-10-06 | 2016-11-29 | Solexel, Inc. | Method for making a crystalline silicon solar cell substrate utilizing flat top laser beam |
| US9583651B2 (en) | 2011-12-26 | 2017-02-28 | Solexel, Inc. | Systems and methods for enhanced light trapping in solar cells |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2013068471A1 (fr) | 2011-11-09 | 2013-05-16 | Institutt For Energiteknikk | Procédé et appareil pour l'ablation d'un diélectrique d'un substrat semi-conducteur |
| CN113690183B (zh) * | 2021-07-06 | 2024-06-25 | 华为数字能源技术有限公司 | 晶圆的减薄方法 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0536431A1 (fr) * | 1991-10-07 | 1993-04-14 | Siemens Aktiengesellschaft | Méthode pour travailler un dispositif à film mince par laser |
| DE19915666A1 (de) * | 1999-04-07 | 2000-10-19 | Fraunhofer Ges Forschung | Verfahren und Vorrichtung zur selektiven Kontaktierung von Solarzellen |
| DE102006042617A1 (de) * | 2006-09-05 | 2007-09-13 | Maximilian Scherff | Lokale Heterostrukturkontakte |
| US20070295399A1 (en) * | 2005-12-16 | 2007-12-27 | Bp Corporation North America Inc. | Back-Contact Photovoltaic Cells |
| US7517709B1 (en) * | 2007-11-16 | 2009-04-14 | Applied Materials, Inc. | Method of forming backside point contact structures for silicon solar cells |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| AUPP699698A0 (en) * | 1998-11-06 | 1998-12-03 | Pacific Solar Pty Limited | Indirect laser patterning of resist |
| US20070137692A1 (en) * | 2005-12-16 | 2007-06-21 | Bp Corporation North America Inc. | Back-Contact Photovoltaic Cells |
| WO2010033744A2 (fr) * | 2008-09-19 | 2010-03-25 | Applied Materials, Inc. | Procédés de fabrication d’un émetteur présentant le profil dopant désiré |
-
2009
- 2009-04-20 DE DE102009018112A patent/DE102009018112B3/de not_active Expired - Fee Related
-
2010
- 2010-04-20 WO PCT/EP2010/055210 patent/WO2010122028A2/fr active Application Filing
- 2010-04-20 CN CN2010800176371A patent/CN102405528A/zh active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0536431A1 (fr) * | 1991-10-07 | 1993-04-14 | Siemens Aktiengesellschaft | Méthode pour travailler un dispositif à film mince par laser |
| DE19915666A1 (de) * | 1999-04-07 | 2000-10-19 | Fraunhofer Ges Forschung | Verfahren und Vorrichtung zur selektiven Kontaktierung von Solarzellen |
| US20070295399A1 (en) * | 2005-12-16 | 2007-12-27 | Bp Corporation North America Inc. | Back-Contact Photovoltaic Cells |
| DE102006042617A1 (de) * | 2006-09-05 | 2007-09-13 | Maximilian Scherff | Lokale Heterostrukturkontakte |
| US7517709B1 (en) * | 2007-11-16 | 2009-04-14 | Applied Materials, Inc. | Method of forming backside point contact structures for silicon solar cells |
Non-Patent Citations (1)
| Title |
|---|
| Plagwitz, H. u.a.: Low-Temperature Formation of Local Al Contacts to a-Si:H-passivated Si Wafers. In: Progress in Photovoltaics: Research and Applications, 2004, Vol. 12, No. 1, 47-54, ISSN 1062-7995 * |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9236510B2 (en) | 2004-11-30 | 2016-01-12 | Solexel, Inc. | Patterning of silicon oxide layers using pulsed laser ablation |
| US9419165B2 (en) | 2006-10-09 | 2016-08-16 | Solexel, Inc. | Laser processing for high-efficiency thin crystalline silicon solar cell fabrication |
| US9455362B2 (en) | 2007-10-06 | 2016-09-27 | Solexel, Inc. | Laser irradiation aluminum doping for monocrystalline silicon substrates |
| US9508886B2 (en) | 2007-10-06 | 2016-11-29 | Solexel, Inc. | Method for making a crystalline silicon solar cell substrate utilizing flat top laser beam |
| WO2012092537A2 (fr) | 2010-12-30 | 2012-07-05 | Solexel, Inc. | Procédés de traitement au laser pour cellules solaires photovoltaïques |
| EP2659518A2 (fr) * | 2010-12-30 | 2013-11-06 | Solexel, Inc. | Procédés de traitement au laser pour cellules solaires photovoltaïques |
| EP2659518A4 (fr) * | 2010-12-30 | 2014-09-24 | Solexel Inc | Procédés de traitement au laser pour cellules solaires photovoltaïques |
| US9583651B2 (en) | 2011-12-26 | 2017-02-28 | Solexel, Inc. | Systems and methods for enhanced light trapping in solar cells |
| EP2903030A1 (fr) * | 2014-01-29 | 2015-08-05 | LG Electronics Inc. | Cellule solaire et son procédé de fabrication |
| US10847663B2 (en) | 2014-01-29 | 2020-11-24 | Lg Electronics Inc. | Solar cell and method for manufacturing the same |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2010122028A2 (fr) | 2010-10-28 |
| WO2010122028A3 (fr) | 2011-09-22 |
| CN102405528A (zh) | 2012-04-04 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition | ||
| R020 | Patent grant now final |
Effective date: 20110316 |
|
| R082 | Change of representative |
Representative=s name: QIP PATENTANWAELTE, DR. KUEHN & PARTNER MBB, DE |
|
| R119 | Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee | ||
| R119 | Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee |
Effective date: 20141101 |