DE102008005344A1 - Strahlungsemittierendes Bauelement - Google Patents

Strahlungsemittierendes Bauelement Download PDF

Info

Publication number
DE102008005344A1
DE102008005344A1 DE102008005344A DE102008005344A DE102008005344A1 DE 102008005344 A1 DE102008005344 A1 DE 102008005344A1 DE 102008005344 A DE102008005344 A DE 102008005344A DE 102008005344 A DE102008005344 A DE 102008005344A DE 102008005344 A1 DE102008005344 A1 DE 102008005344A1
Authority
DE
Germany
Prior art keywords
radiation
emitting component
layer
layer stack
semiconductor layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE102008005344A
Other languages
German (de)
English (en)
Inventor
Stefan GRÖTSCH
Jan Marfeld
Jörg Erich SORG
Moritz Dr. Engl
Steffen Dr. Köhler
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Priority to DE102008005344A priority Critical patent/DE102008005344A1/de
Priority to TW097131452A priority patent/TW200915624A/zh
Priority to TW101124292A priority patent/TWI473297B/zh
Priority to CN2008801079846A priority patent/CN101803048B/zh
Priority to EP08801255.4A priority patent/EP2198464B1/de
Priority to CN201110340389.0A priority patent/CN102347417B/zh
Priority to PCT/DE2008/001448 priority patent/WO2009036731A2/de
Priority to JP2010525192A priority patent/JP5362727B2/ja
Priority to US12/677,320 priority patent/US8373186B2/en
Priority to KR1020097025704A priority patent/KR101460388B1/ko
Publication of DE102008005344A1 publication Critical patent/DE102008005344A1/de
Priority to US13/711,662 priority patent/US8963181B2/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses

Landscapes

  • Led Device Packages (AREA)
  • Led Devices (AREA)
DE102008005344A 2007-09-21 2008-01-21 Strahlungsemittierendes Bauelement Withdrawn DE102008005344A1 (de)

Priority Applications (11)

Application Number Priority Date Filing Date Title
DE102008005344A DE102008005344A1 (de) 2007-09-21 2008-01-21 Strahlungsemittierendes Bauelement
TW097131452A TW200915624A (en) 2007-09-21 2008-08-18 Radiation-emitting component
TW101124292A TWI473297B (zh) 2007-09-21 2008-08-18 輻射發射組件
CN201110340389.0A CN102347417B (zh) 2007-09-21 2008-08-28 发射辐射的器件
EP08801255.4A EP2198464B1 (de) 2007-09-21 2008-08-28 Strahlungsemittierendes bauelement
CN2008801079846A CN101803048B (zh) 2007-09-21 2008-08-28 发射辐射的器件
PCT/DE2008/001448 WO2009036731A2 (de) 2007-09-21 2008-08-28 Strahlungsemittierendes bauelement
JP2010525192A JP5362727B2 (ja) 2007-09-21 2008-08-28 放射放出コンポーネント
US12/677,320 US8373186B2 (en) 2007-09-21 2008-08-28 Radiation-emitting component
KR1020097025704A KR101460388B1 (ko) 2007-09-21 2008-08-28 복사 방출 소자
US13/711,662 US8963181B2 (en) 2007-09-21 2012-12-12 Radiation-emitting component

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102007045087 2007-09-21
DE102007045087.9 2007-09-21
DE102008005344A DE102008005344A1 (de) 2007-09-21 2008-01-21 Strahlungsemittierendes Bauelement

Publications (1)

Publication Number Publication Date
DE102008005344A1 true DE102008005344A1 (de) 2009-04-02

Family

ID=40384494

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102008005344A Withdrawn DE102008005344A1 (de) 2007-09-21 2008-01-21 Strahlungsemittierendes Bauelement

Country Status (8)

Country Link
US (2) US8373186B2 (https=)
EP (1) EP2198464B1 (https=)
JP (1) JP5362727B2 (https=)
KR (1) KR101460388B1 (https=)
CN (2) CN101803048B (https=)
DE (1) DE102008005344A1 (https=)
TW (2) TW200915624A (https=)
WO (1) WO2009036731A2 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102012100788A1 (de) * 2012-01-31 2013-08-01 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement mit Konverterelement

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103633223B (zh) * 2013-11-13 2016-08-17 苏州热驰光电科技有限公司 高光透玻璃基板led照明装置及其制备方法
WO2016079658A1 (en) * 2014-11-18 2016-05-26 Industries Yifei Wang Inc. Led module, methods of manufacturing same and luminaire integrating same
US20220223771A1 (en) * 2019-05-14 2022-07-14 Osram Opto Semiconductors Gmbh Optoelectronic component, pixels, display assembly, and method
KR20240133228A (ko) * 2023-02-28 2024-09-04 삼성전자주식회사 반도체 발광 소자
CN116344707A (zh) * 2023-03-20 2023-06-27 华灿光电（浙江）有限公司 改善发光亮度的发光二极管及其制备方法
CN120214069B (zh) * 2025-05-23 2025-08-22 上海聚跃检测技术有限公司 一种半导体晶圆表面的芯片检测方法及系统

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6455878B1 (en) * 2001-05-15 2002-09-24 Lumileds Lighting U.S., Llc Semiconductor LED flip-chip having low refractive index underfill
US20030025212A1 (en) * 2001-05-09 2003-02-06 Bhat Jerome Chandra Semiconductor LED flip-chip with high reflectivity dielectric coating on the mesa
US20060071223A1 (en) * 2004-09-30 2006-04-06 Markus Richter Light-emitting diode chip comprising a converter layer and method of making a light-emitting diode chip comprising a converter layer
WO2006040704A1 (en) * 2004-10-12 2006-04-20 Philips Intellectual Property & Standards Gmbh Electroluminescent light source
US20060145172A1 (en) * 2004-12-30 2006-07-06 Jung-Chieh Su Light emitting diode with a quasi-omnidirectional reflector

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11145519A (ja) 1997-09-02 1999-05-28 Toshiba Corp 半導体発光素子、半導体発光装置および画像表示装置
EP2270875B1 (de) * 2000-04-26 2018-01-10 OSRAM Opto Semiconductors GmbH Strahlungsmittierendes Halbleiterbauelement und dessen Herstellungsverfahren
US20020017652A1 (en) * 2000-08-08 2002-02-14 Stefan Illek Semiconductor chip for optoelectronics
US7075112B2 (en) * 2001-01-31 2006-07-11 Gentex Corporation High power radiation emitter device and heat dissipating package for electronic components
JP4834198B2 (ja) 2002-12-25 2011-12-14 独立行政法人科学技術振興機構 発光素子装置、受光素子装置、光学装置、フッ化物結晶
US7087936B2 (en) * 2003-04-30 2006-08-08 Cree, Inc. Methods of forming light-emitting devices having an antireflective layer that has a graded index of refraction
FR2861853B1 (fr) 2003-10-30 2006-02-24 Soitec Silicon On Insulator Substrat avec adaptation d'indice
JP2005157313A (ja) * 2003-10-30 2005-06-16 Arisawa Mfg Co Ltd リアプロジェクションディスプレイ用スクリーン
TW200602585A (en) 2004-03-16 2006-01-16 Koninkl Philips Electronics Nv High brightness illumination device with incoherent solid state light source
JP2006093602A (ja) * 2004-09-27 2006-04-06 Toyoda Gosei Co Ltd 発光素子
DE102004047640A1 (de) * 2004-09-30 2006-04-13 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Gehäuse für ein optoelektronisches Bauelement
US7341878B2 (en) * 2005-03-14 2008-03-11 Philips Lumileds Lighting Company, Llc Wavelength-converted semiconductor light emitting device
JP2006261540A (ja) 2005-03-18 2006-09-28 Stanley Electric Co Ltd 発光デバイス
JP4996101B2 (ja) * 2006-02-02 2012-08-08 新光電気工業株式会社 半導体装置及び半導体装置の製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030025212A1 (en) * 2001-05-09 2003-02-06 Bhat Jerome Chandra Semiconductor LED flip-chip with high reflectivity dielectric coating on the mesa
US6455878B1 (en) * 2001-05-15 2002-09-24 Lumileds Lighting U.S., Llc Semiconductor LED flip-chip having low refractive index underfill
US20060071223A1 (en) * 2004-09-30 2006-04-06 Markus Richter Light-emitting diode chip comprising a converter layer and method of making a light-emitting diode chip comprising a converter layer
WO2006040704A1 (en) * 2004-10-12 2006-04-20 Philips Intellectual Property & Standards Gmbh Electroluminescent light source
US20060145172A1 (en) * 2004-12-30 2006-07-06 Jung-Chieh Su Light emitting diode with a quasi-omnidirectional reflector

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102012100788A1 (de) * 2012-01-31 2013-08-01 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement mit Konverterelement

Also Published As

Publication number Publication date
JP2010539715A (ja) 2010-12-16
US8373186B2 (en) 2013-02-12
KR20100055357A (ko) 2010-05-26
JP5362727B2 (ja) 2013-12-11
US20130146919A1 (en) 2013-06-13
TWI473297B (zh) 2015-02-11
CN102347417A (zh) 2012-02-08
CN101803048A (zh) 2010-08-11
CN102347417B (zh) 2014-10-01
US20100207148A1 (en) 2010-08-19
EP2198464A2 (de) 2010-06-23
WO2009036731A3 (de) 2009-05-28
WO2009036731A2 (de) 2009-03-26
US8963181B2 (en) 2015-02-24
TW201242078A (en) 2012-10-16
TW200915624A (en) 2009-04-01
KR101460388B1 (ko) 2014-11-10
EP2198464B1 (de) 2016-11-16
CN101803048B (zh) 2011-12-21

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OM8 Search report available as to paragraph 43 lit. 1 sentence 1 patent law
R012 Request for examination validly filed
R012 Request for examination validly filed

Effective date: 20141202

R016 Response to examination communication
R119 Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee