DE102007045377A8 - Optische Bearbeitung in selektiver Tiefe - Google Patents

Optische Bearbeitung in selektiver Tiefe Download PDF

Info

Publication number
DE102007045377A8
DE102007045377A8 DE102007045377A DE102007045377A DE102007045377A8 DE 102007045377 A8 DE102007045377 A8 DE 102007045377A8 DE 102007045377 A DE102007045377 A DE 102007045377A DE 102007045377 A DE102007045377 A DE 102007045377A DE 102007045377 A8 DE102007045377 A8 DE 102007045377A8
Authority
DE
Germany
Prior art keywords
optical processing
selective depth
selective
depth
optical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
DE102007045377A
Other languages
English (en)
Other versions
DE102007045377A1 (de
Inventor
Woo Sik Palo Alto Yoo
Kitaek Dublin KANG
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
WaferMasters Inc
Original Assignee
WaferMasters Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by WaferMasters Inc filed Critical WaferMasters Inc
Publication of DE102007045377A1 publication Critical patent/DE102007045377A1/de
Publication of DE102007045377A8 publication Critical patent/DE102007045377A8/de
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/0604—Shaping the laser beam, e.g. by masks or multi-focusing by a combination of beams
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/40—Removing material taking account of the properties of the material involved
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50—Working by transmitting the laser beam through or within the workpiece
    • B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Mechanical Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Plasma & Fusion (AREA)
  • Computer Hardware Design (AREA)
  • Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Toxicology (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Laser Beam Processing (AREA)
DE102007045377A 2007-02-27 2007-09-22 Optische Bearbeitung in selektiver Tiefe Ceased DE102007045377A1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/679,633 US20080206897A1 (en) 2007-02-27 2007-02-27 Selective Depth Optical Processing
US11/679,633 2007-02-27

Publications (2)

Publication Number Publication Date
DE102007045377A1 DE102007045377A1 (de) 2008-08-28
DE102007045377A8 true DE102007045377A8 (de) 2008-12-24

Family

ID=39646166

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102007045377A Ceased DE102007045377A1 (de) 2007-02-27 2007-09-22 Optische Bearbeitung in selektiver Tiefe

Country Status (5)

Country Link
US (1) US20080206897A1 (de)
JP (1) JP2008211177A (de)
KR (1) KR20080079573A (de)
DE (1) DE102007045377A1 (de)
NL (1) NL1035031C2 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2913843A4 (de) 2012-10-23 2016-06-29 Fuji Electric Co Ltd Verfahren zur herstellung eines halbleiterbauelements
CN110945028B (zh) 2017-07-10 2023-09-08 国际药物发展生物技术公司 用非岩藻糖基化促凋亡抗cd19抗体与抗cd20抗体或化疗剂联合治疗b细胞恶性肿瘤
FR3095152B1 (fr) * 2019-04-16 2021-12-17 Safran Aircraft Engines Procédé de traitement d’un défaut interne d’une pièce
JP2023536376A (ja) * 2021-07-06 2023-08-25 エーピーエス リサーチ コーポレーション レーザー熱処理装置及びレーザー熱処理方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60216561A (ja) * 1984-04-12 1985-10-30 Fuji Electric Corp Res & Dev Ltd 熱処理方法
JPH05206053A (ja) * 1992-01-30 1993-08-13 Matsushita Electric Ind Co Ltd 結晶損傷除去装置
JPH0541359A (ja) * 1991-08-05 1993-02-19 Nippon Telegr & Teleph Corp <Ntt> イオン衝撃損傷の除去法
US5581346A (en) * 1993-05-10 1996-12-03 Midwest Research Institute System for characterizing semiconductor materials and photovoltaic device
JPH11101624A (ja) * 1997-09-29 1999-04-13 Hitachi Ltd 欠陥評価装置およびその方法並びに半導体の製造方法
US6177984B1 (en) * 1998-01-23 2001-01-23 Providence Health System Video imaging of superficial biological tissue layers using polarized light
JP4250822B2 (ja) * 1999-09-14 2009-04-08 株式会社デンソー 炭化珪素半導体装置の製造方法
TWI520269B (zh) * 2002-12-03 2016-02-01 Hamamatsu Photonics Kk Cutting method of semiconductor substrate
JP4408361B2 (ja) * 2003-09-26 2010-02-03 株式会社ディスコ ウエーハの分割方法
US7098155B2 (en) * 2003-09-29 2006-08-29 Ultratech, Inc. Laser thermal annealing of lightly doped silicon substrates
JP4251054B2 (ja) * 2003-10-01 2009-04-08 株式会社デンソー 半導体装置の製造方法
TWI297521B (en) * 2004-01-22 2008-06-01 Ultratech Inc Laser thermal annealing of lightly doped silicon substrates
US8148211B2 (en) * 2004-06-18 2012-04-03 Electro Scientific Industries, Inc. Semiconductor structure processing using multiple laser beam spots spaced on-axis delivered simultaneously
JP5078239B2 (ja) * 2004-06-18 2012-11-21 株式会社半導体エネルギー研究所 レーザ照射方法及びレーザ照射装置、並びに非単結晶を結晶化する方法及び半導体装置を作製する方法
JP2006295068A (ja) * 2005-04-14 2006-10-26 Sony Corp 照射装置
US7599048B2 (en) * 2007-02-09 2009-10-06 Wafermasters, Inc. Optical emission spectroscopy process monitoring and material characterization

Also Published As

Publication number Publication date
US20080206897A1 (en) 2008-08-28
NL1035031A1 (nl) 2008-08-28
KR20080079573A (ko) 2008-09-01
JP2008211177A (ja) 2008-09-11
DE102007045377A1 (de) 2008-08-28
NL1035031C2 (nl) 2011-03-28

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Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
8196 Reprint of faulty title page (publication) german patentblatt: part 1a6
OP8 Request for examination as to paragraph 44 patent law
8131 Rejection