DE102006061167A1 - Optoelektronisches Halbleiterbauelement - Google Patents

Optoelektronisches Halbleiterbauelement Download PDF

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Publication number
DE102006061167A1
DE102006061167A1 DE102006061167A DE102006061167A DE102006061167A1 DE 102006061167 A1 DE102006061167 A1 DE 102006061167A1 DE 102006061167 A DE102006061167 A DE 102006061167A DE 102006061167 A DE102006061167 A DE 102006061167A DE 102006061167 A1 DE102006061167 A1 DE 102006061167A1
Authority
DE
Germany
Prior art keywords
optoelectronic semiconductor
layer
semiconductor component
component according
intermediate layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE102006061167A
Other languages
German (de)
English (en)
Inventor
Volker Dr. Härle
Matthias Dr. Sabathil
Uwe Dr. Strauss
Christoph Dr. Eichler
Stephan Dr. Miller
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Priority to DE102006061167A priority Critical patent/DE102006061167A1/de
Priority to TW096114217A priority patent/TWI354381B/zh
Priority to US12/298,703 priority patent/US8093607B2/en
Priority to EP07722298A priority patent/EP2011161A2/de
Priority to CN2007800147038A priority patent/CN101443923B/zh
Priority to KR1020087028644A priority patent/KR101370257B1/ko
Priority to PCT/DE2007/000740 priority patent/WO2007121739A2/de
Priority to JP2009506911A priority patent/JP5623074B2/ja
Publication of DE102006061167A1 publication Critical patent/DE102006061167A1/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/862—Resonant cavity structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/835—Reflective materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/882—Scattering means

Landscapes

  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)
  • Light Receiving Elements (AREA)
  • Photovoltaic Devices (AREA)
DE102006061167A 2006-04-25 2006-12-22 Optoelektronisches Halbleiterbauelement Withdrawn DE102006061167A1 (de)

Priority Applications (8)

Application Number Priority Date Filing Date Title
DE102006061167A DE102006061167A1 (de) 2006-04-25 2006-12-22 Optoelektronisches Halbleiterbauelement
TW096114217A TWI354381B (en) 2006-04-25 2007-04-23 Opto-electronic semiconductor component
US12/298,703 US8093607B2 (en) 2006-04-25 2007-04-25 Optoelectronic semiconductor component
EP07722298A EP2011161A2 (de) 2006-04-25 2007-04-25 Optoelektronisches halbleiterbauelement
CN2007800147038A CN101443923B (zh) 2006-04-25 2007-04-25 光电半导体元件
KR1020087028644A KR101370257B1 (ko) 2006-04-25 2007-04-25 광전자 반도체 소자
PCT/DE2007/000740 WO2007121739A2 (de) 2006-04-25 2007-04-25 Optoelektronisches halbleiterbauelement
JP2009506911A JP5623074B2 (ja) 2006-04-25 2007-04-25 光電子半導体部品

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
DE102006019109 2006-04-25
DE102006019109.9 2006-04-25
DE102006030252 2006-06-30
DE102006030252.4 2006-06-30
DE102006061167A DE102006061167A1 (de) 2006-04-25 2006-12-22 Optoelektronisches Halbleiterbauelement

Publications (1)

Publication Number Publication Date
DE102006061167A1 true DE102006061167A1 (de) 2007-12-20

Family

ID=38461180

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102006061167A Withdrawn DE102006061167A1 (de) 2006-04-25 2006-12-22 Optoelektronisches Halbleiterbauelement

Country Status (8)

Country Link
US (1) US8093607B2 (https=)
EP (1) EP2011161A2 (https=)
JP (1) JP5623074B2 (https=)
KR (1) KR101370257B1 (https=)
CN (1) CN101443923B (https=)
DE (1) DE102006061167A1 (https=)
TW (1) TWI354381B (https=)
WO (1) WO2007121739A2 (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102008019268A1 (de) * 2008-02-29 2009-09-03 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements
WO2010036602A1 (en) * 2008-09-26 2010-04-01 S.O.I.Tec Silicon On Insulator Technologies Method of forming a composite laser substrate

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DE102006007293B4 (de) * 2006-01-31 2023-04-06 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zum Herstellen eines Quasi-Substratwafers und ein unter Verwendung eines solchen Quasi-Substratwafers hergestellter Halbleiterkörper
KR100872717B1 (ko) * 2007-06-22 2008-12-05 엘지이노텍 주식회사 발광 소자 및 그 제조방법
US9461201B2 (en) 2007-11-14 2016-10-04 Cree, Inc. Light emitting diode dielectric mirror
US7915629B2 (en) * 2008-12-08 2011-03-29 Cree, Inc. Composite high reflectivity layer
DE102009036621B4 (de) 2009-08-07 2023-12-21 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Halbleiterbauteil
US9362459B2 (en) 2009-09-02 2016-06-07 United States Department Of Energy High reflectivity mirrors and method for making same
US9435493B2 (en) 2009-10-27 2016-09-06 Cree, Inc. Hybrid reflector system for lighting device
US9105824B2 (en) 2010-04-09 2015-08-11 Cree, Inc. High reflective board or substrate for LEDs
US9012938B2 (en) 2010-04-09 2015-04-21 Cree, Inc. High reflective substrate of light emitting devices with improved light output
US10243121B2 (en) 2011-06-24 2019-03-26 Cree, Inc. High voltage monolithic LED chip with improved reliability
US9728676B2 (en) 2011-06-24 2017-08-08 Cree, Inc. High voltage monolithic LED chip
TWI535077B (zh) 2012-05-24 2016-05-21 台達電子工業股份有限公司 發光單元及其發光模組
KR102091831B1 (ko) * 2013-01-08 2020-03-20 서울반도체 주식회사 발광 다이오드 및 그 제조방법
US10658546B2 (en) 2015-01-21 2020-05-19 Cree, Inc. High efficiency LEDs and methods of manufacturing
US10693038B2 (en) * 2017-11-22 2020-06-23 Epistar Corporation Semiconductor device

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DE19640594B4 (de) * 1996-10-01 2016-08-04 Osram Gmbh Bauelement
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US6700692B2 (en) * 1997-04-02 2004-03-02 Gentex Corporation Electrochromic rearview mirror assembly incorporating a display/signal light
US6150239A (en) * 1997-05-31 2000-11-21 Max Planck Society Method for the transfer of thin layers monocrystalline material onto a desirable substrate
EP0905797B1 (de) 1997-09-29 2010-02-10 OSRAM Opto Semiconductors GmbH Halbleiterlichtquelle und Verfahren zu ihrer Herstellung
JP3346735B2 (ja) * 1998-03-03 2002-11-18 日亜化学工業株式会社 窒化物半導体発光素子及びその製造方法
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US6320206B1 (en) 1999-02-05 2001-11-20 Lumileds Lighting, U.S., Llc Light emitting devices having wafer bonded aluminum gallium indium nitride structures and mirror stacks
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JP3719047B2 (ja) * 1999-06-07 2005-11-24 日亜化学工業株式会社 窒化物半導体素子
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KR20110042249A (ko) * 2003-06-04 2011-04-25 유명철 수직 구조 화합물 반도체 디바이스의 제조 방법
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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102008019268A1 (de) * 2008-02-29 2009-09-03 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements
US8711893B2 (en) 2008-02-29 2014-04-29 Osram Opto Semiconductors Gmbh Optoelectronic component and method for producing an optoelectronic component
WO2010036602A1 (en) * 2008-09-26 2010-04-01 S.O.I.Tec Silicon On Insulator Technologies Method of forming a composite laser substrate
US8692260B2 (en) 2008-09-26 2014-04-08 Soitec Method of forming a composite laser substrate

Also Published As

Publication number Publication date
KR20080112410A (ko) 2008-12-24
CN101443923A (zh) 2009-05-27
JP5623074B2 (ja) 2014-11-12
US20090309113A1 (en) 2009-12-17
CN101443923B (zh) 2010-12-08
TWI354381B (en) 2011-12-11
WO2007121739A3 (de) 2008-03-13
WO2007121739A2 (de) 2007-11-01
TW200746479A (en) 2007-12-16
JP2009534859A (ja) 2009-09-24
EP2011161A2 (de) 2009-01-07
US8093607B2 (en) 2012-01-10
KR101370257B1 (ko) 2014-03-05

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R119 Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee