DE102004016131A1 - Herstellung von Metalloxid-Nanoteilchen hoher Kristallinität und hoher Reinheit - Google Patents

Herstellung von Metalloxid-Nanoteilchen hoher Kristallinität und hoher Reinheit Download PDF

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Publication number
DE102004016131A1
DE102004016131A1 DE200410016131 DE102004016131A DE102004016131A1 DE 102004016131 A1 DE102004016131 A1 DE 102004016131A1 DE 200410016131 DE200410016131 DE 200410016131 DE 102004016131 A DE102004016131 A DE 102004016131A DE 102004016131 A1 DE102004016131 A1 DE 102004016131A1
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Prior art keywords
metal oxide
oxide nanoparticles
preparation
high purity
high crystallinity
Prior art date
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Withdrawn
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DE200410016131
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English (en)
Inventor
Markus Antonietti
Markus Niederberger
Nicola Pinna
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Max Planck Gesellschaft zur Foerderung der Wissenschaften eV
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Max Planck Gesellschaft zur Foerderung der Wissenschaften eV
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Priority to DE200410016131 priority Critical patent/DE102004016131A1/de
Priority to PCT/EP2005/003379 priority patent/WO2005095278A1/de
Publication of DE102004016131A1 publication Critical patent/DE102004016131A1/de
Withdrawn legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G35/00—Compounds of tantalum
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G1/00—Methods of preparing compounds of metals not covered by subclasses C01B, C01C, C01D, or C01F, in general
    • C01G1/02—Oxides
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G15/00—Compounds of gallium, indium or thallium
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G19/00—Compounds of tin
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G27/00—Compounds of hafnium
    • C01G27/02—Oxides
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G31/00—Compounds of vanadium
    • C01G31/02—Oxides
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G33/00—Compounds of niobium
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G49/00—Compounds of iron
    • C01G49/02—Oxides; Hydroxides
    • C01G49/08—Ferroso-ferric oxide [Fe3O4]
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
    • C01P2002/72—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by d-values or two theta-values, e.g. as X-ray diagram
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/80—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70
    • C01P2002/82—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70 by IR- or Raman-data
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/01—Particle morphology depicted by an image
    • C01P2004/03—Particle morphology depicted by an image obtained by SEM
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/01—Particle morphology depicted by an image
    • C01P2004/04—Particle morphology depicted by an image obtained by TEM, STEM, STM or AFM
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/20—Particle morphology extending in two dimensions, e.g. plate-like
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/30—Particle morphology extending in three dimensions
    • C01P2004/32—Spheres
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/51—Particles with a specific particle size distribution
    • C01P2004/52—Particles with a specific particle size distribution highly monodisperse size distribution
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C01P2004/64—Nanometer sized, i.e. from 1-100 nanometer
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/80—Compositional purity

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Composite Materials (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Oxygen, Ozone, And Oxides In General (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)

Abstract

Die Erfindung betrifft ein Verfahren zur Herstellung von Metalloxid-Nanoteilchen, insbesondere halbleitenden Metalloxid-Nanoteilchen, die mit dem erfindungsgemäßen Verfahren erhältlichen Metalloxid-Nanoteilchen sowie deren Verwendung insbesondere im Bereich der Elektronik oder Elektrooptik. Mit dem erfindungsgemäßen Verfahren können insbesondere Produkte mit hoher Kristallinität und Reinheit erhalten werden, welche keinerlei Heteroatome enthalten.
DE200410016131 2004-04-01 2004-04-01 Herstellung von Metalloxid-Nanoteilchen hoher Kristallinität und hoher Reinheit Withdrawn DE102004016131A1 (de)

Priority Applications (2)

Application Number Priority Date Filing Date Title
DE200410016131 DE102004016131A1 (de) 2004-04-01 2004-04-01 Herstellung von Metalloxid-Nanoteilchen hoher Kristallinität und hoher Reinheit
PCT/EP2005/003379 WO2005095278A1 (de) 2004-04-01 2005-03-31 Herstellung von metalloxid-nanoteilchen hoher kristallinität und hoher reinheit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE200410016131 DE102004016131A1 (de) 2004-04-01 2004-04-01 Herstellung von Metalloxid-Nanoteilchen hoher Kristallinität und hoher Reinheit

Publications (1)

Publication Number Publication Date
DE102004016131A1 true DE102004016131A1 (de) 2005-10-20

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DE200410016131 Withdrawn DE102004016131A1 (de) 2004-04-01 2004-04-01 Herstellung von Metalloxid-Nanoteilchen hoher Kristallinität und hoher Reinheit

Country Status (2)

Country Link
DE (1) DE102004016131A1 (de)
WO (1) WO2005095278A1 (de)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7791923B2 (en) 2006-01-09 2010-09-07 Samsung Electronics Co., Ltd. Multi-state resistive memory element, multi-bit resistive memory cell, operating method thereof, and data processing system using the memory element
WO2011020685A1 (de) 2009-08-17 2011-02-24 Siemens Aktiengesellschaft Dielektrische schutzschicht für eine selbstorganisierende monolage (sam)
US9079164B2 (en) 2012-03-26 2015-07-14 Brigham Young University Single reaction synthesis of texturized catalysts
US9114378B2 (en) 2012-03-26 2015-08-25 Brigham Young University Iron and cobalt based fischer-tropsch pre-catalysts and catalysts
US9289750B2 (en) 2013-03-09 2016-03-22 Brigham Young University Method of making highly porous, stable aluminum oxides doped with silicon

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100415651C (zh) * 2005-12-08 2008-09-03 华东理工大学 一种纳米氧化锡的制备方法
CN100386844C (zh) * 2006-03-08 2008-05-07 浙江理工大学 一种二氧化锡量子点的制备方法
EP2488452A1 (de) 2009-10-13 2012-08-22 Justus-Liebig-Universität Gießen Redispergierbare metalloxidnanopartikel und verfahren zu ihrer herstellung
DE102014218355B4 (de) 2014-09-12 2018-08-02 Helmholtz-Zentrum Dresden - Rossendorf E.V. Verfahren zur Herstellung oberflächenhydrophilisierter Metalloxid-Nanopartikel
DK3265430T3 (da) * 2015-03-02 2019-08-26 Basf Se Anvendelse af krystallinske tantaloxidpartikler som pinningcenter i superleder

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10323816A1 (de) * 2003-05-23 2004-12-09 Basf Ag Verfahren zur Herstellung von Mischoxiden mit mittleren Durchmessern kleiner als 10 Nanometer
DE10329626A1 (de) * 2003-06-25 2005-01-20 Itn Nanovation Gmbh Mischmetalloxide und ihre Verwendung in CO2-Sensoren
DE10338465A1 (de) * 2003-08-21 2005-03-17 MAX-PLANCK-Gesellschaft zur Förderung der Wissenschaften e.V. Herstellung von Perovskit-Teilchen
US7169375B2 (en) * 2003-08-29 2007-01-30 General Electric Company Metal oxide nanoparticles, methods of making, and methods of use

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7791923B2 (en) 2006-01-09 2010-09-07 Samsung Electronics Co., Ltd. Multi-state resistive memory element, multi-bit resistive memory cell, operating method thereof, and data processing system using the memory element
WO2011020685A1 (de) 2009-08-17 2011-02-24 Siemens Aktiengesellschaft Dielektrische schutzschicht für eine selbstorganisierende monolage (sam)
DE102009037691A1 (de) 2009-08-17 2011-03-03 Siemens Aktiengesellschaft Dielektrische Schutzschicht für eine selbstorganisierende Monolage (SAM)
US8945297B2 (en) 2009-08-17 2015-02-03 Siemens Aktiengesellschaft Dielectric protective layer for a self-organizing monolayer (SAM)
US9079164B2 (en) 2012-03-26 2015-07-14 Brigham Young University Single reaction synthesis of texturized catalysts
US9114378B2 (en) 2012-03-26 2015-08-25 Brigham Young University Iron and cobalt based fischer-tropsch pre-catalysts and catalysts
US9289750B2 (en) 2013-03-09 2016-03-22 Brigham Young University Method of making highly porous, stable aluminum oxides doped with silicon

Also Published As

Publication number Publication date
WO2005095278A1 (de) 2005-10-13

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