DE102004015526A1 - Logischer Datenblock, magnetischer Direktzugriffsspeicher, Speichermodul, Computersystem und Verfahren - Google Patents

Logischer Datenblock, magnetischer Direktzugriffsspeicher, Speichermodul, Computersystem und Verfahren Download PDF

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Publication number
DE102004015526A1
DE102004015526A1 DE102004015526A DE102004015526A DE102004015526A1 DE 102004015526 A1 DE102004015526 A1 DE 102004015526A1 DE 102004015526 A DE102004015526 A DE 102004015526A DE 102004015526 A DE102004015526 A DE 102004015526A DE 102004015526 A1 DE102004015526 A1 DE 102004015526A1
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DE
Germany
Prior art keywords
data block
logical data
computer system
random access
memory module
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
DE102004015526A
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English (en)
Inventor
Kenneth K Smith
Frederick A Perner
Richard L Hilton
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Hewlett Packard Development Co LP
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hewlett Packard Development Co LP filed Critical Hewlett Packard Development Co LP
Publication of DE102004015526A1 publication Critical patent/DE102004015526A1/de
Ceased legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect

Abstract

Es ist ein logischer Datenblock in einem MRAM offenbart. Der logische Datenblock weist magnetische Speicherzellen auf, die an Schnittpunkten von Schwerachsenerzeugungsleitern und einem Leichtachsenerzeugungsleiter gebildet sind. Der logische Datenblock kann ferner größenmäßig durch einen vorgewählten blockbasierten Fehlerkorrekturcode konfiguriert sein. Ein magnetisches Speichermodul und ein Computersystem, das einen MRAM umfaßt, der einen logischen Datenblock gemäß Ausführungsbeispielen der vorliegenden Erfindung aufweist, sind ebenfalls offenbart. Zusätzlich ist ein Verfahrensausführungsbeispiel zum Reduzieren von Halbauswahlschreibfehlern innerhalb eines MRAM offenbart.
DE102004015526A 2003-08-05 2004-03-30 Logischer Datenblock, magnetischer Direktzugriffsspeicher, Speichermodul, Computersystem und Verfahren Ceased DE102004015526A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/635,150 US7240275B2 (en) 2003-08-05 2003-08-05 Logical data block, magnetic random access memory, memory module, computer system and method

Publications (1)

Publication Number Publication Date
DE102004015526A1 true DE102004015526A1 (de) 2005-03-10

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DE102004015526A Ceased DE102004015526A1 (de) 2003-08-05 2004-03-30 Logischer Datenblock, magnetischer Direktzugriffsspeicher, Speichermodul, Computersystem und Verfahren

Country Status (4)

Country Link
US (1) US7240275B2 (de)
JP (1) JP2005056556A (de)
DE (1) DE102004015526A1 (de)
TW (1) TWI325592B (de)

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WO2007046349A1 (ja) * 2005-10-18 2007-04-26 Nec Corporation Ｍｒａｍ、及びその動作方法
JP4905839B2 (ja) * 2005-10-18 2012-03-28 日本電気株式会社 Ｍｒａｍの動作方法
WO2008133087A1 (ja) * 2007-04-17 2008-11-06 Nec Corporation 半導体記憶装置及びその動作方法
US8370714B2 (en) * 2010-01-08 2013-02-05 International Business Machines Corporation Reference cells for spin torque based memory device
KR102025340B1 (ko) 2012-11-27 2019-09-25 삼성전자 주식회사 불휘발성 메모리를 포함하는 반도체 메모리 장치, 이를 포함하는 캐쉬 메모리 및 컴퓨터 시스템
US9106260B2 (en) * 2012-12-19 2015-08-11 Advanced Micro Devices, Inc. Parity data management for a memory architecture
US10536281B2 (en) * 2014-07-30 2020-01-14 University Of South Florida Magnetic memory physically unclonable functions

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US5640343A (en) * 1996-03-18 1997-06-17 International Business Machines Corporation Magnetic memory array using magnetic tunnel junction devices in the memory cells
JP3184129B2 (ja) * 1997-09-29 2001-07-09 甲府日本電気株式会社 記憶装置
US6104633A (en) * 1998-02-10 2000-08-15 International Business Machines Corporation Intentional asymmetry imposed during fabrication and/or access of magnetic tunnel junction devices
US6097625A (en) * 1998-07-16 2000-08-01 International Business Machines Corporation Magnetic random access memory (MRAM) array with magnetic tunnel junction (MTJ) cells and remote diodes
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Also Published As

Publication number Publication date
TWI325592B (en) 2010-06-01
JP2005056556A (ja) 2005-03-03
US7240275B2 (en) 2007-07-03
TW200506936A (en) 2005-02-16
US20050030799A1 (en) 2005-02-10

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OP8 Request for examination as to paragraph 44 patent law
8127 New person/name/address of the applicant

Owner name: SAMSUNG ELECTRONICS CO., LTD., SUWON, KYONGGI, KR

8131 Rejection