DE10194625T1 - Vorrichtung zum Züchten eines Kristalls - Google Patents

Vorrichtung zum Züchten eines Kristalls

Info

Publication number
DE10194625T1
DE10194625T1 DE10194625T DE10194625T DE10194625T1 DE 10194625 T1 DE10194625 T1 DE 10194625T1 DE 10194625 T DE10194625 T DE 10194625T DE 10194625 T DE10194625 T DE 10194625T DE 10194625 T1 DE10194625 T1 DE 10194625T1
Authority
DE
Germany
Prior art keywords
growing
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE10194625T
Other languages
English (en)
Other versions
DE10194625B3 (de
Inventor
Takayuki Kubo
Fumio Kawahigashi
Hiroshi Asano
Naohiro Takaoka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumco Corp
Original Assignee
Sumitomo Mitsubishi Silicon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Mitsubishi Silicon Corp filed Critical Sumitomo Mitsubishi Silicon Corp
Publication of DE10194625T1 publication Critical patent/DE10194625T1/de
Application granted granted Critical
Publication of DE10194625B3 publication Critical patent/DE10194625B3/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/206—Controlling or regulating the thermal history of growing the ingot
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1072—Seed pulling including details of means providing product movement [e.g., shaft guides, servo means]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
    • Y10T117/1088—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone including heating or cooling details

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
DE10194625.2T 2000-10-10 2001-10-05 Vorrichtung zum Züchten eines Kristalls Expired - Fee Related DE10194625B3 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2000309107A JP3587155B2 (ja) 2000-10-10 2000-10-10 結晶成長装置
JP2000-309107 2000-10-10
PCT/JP2001/008810 WO2002031234A1 (fr) 2000-10-10 2001-10-05 Appareil de croissance de cristal

Publications (2)

Publication Number Publication Date
DE10194625T1 true DE10194625T1 (de) 2002-12-05
DE10194625B3 DE10194625B3 (de) 2015-12-10

Family

ID=18789322

Family Applications (1)

Application Number Title Priority Date Filing Date
DE10194625.2T Expired - Fee Related DE10194625B3 (de) 2000-10-10 2001-10-05 Vorrichtung zum Züchten eines Kristalls

Country Status (5)

Country Link
US (1) US6764547B2 (de)
JP (1) JP3587155B2 (de)
KR (1) KR100499435B1 (de)
DE (1) DE10194625B3 (de)
WO (1) WO2002031234A1 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005162599A (ja) 2003-12-03 2005-06-23 Siltron Inc 均一なベイカンシ欠陥を有するシリコン単結晶インゴット、シリコンウエハ、シリコン単結晶インゴットの製造装置、及びシリコン単結晶インゴットの製造方法
JP5018609B2 (ja) 2008-04-08 2012-09-05 株式会社Ｓｕｍｃｏ 単結晶引上げ装置
DE112009001202T5 (de) 2008-05-20 2011-06-22 Shin-Etsu Handotai Co., Ltd. Einkristallherstellungsvorrichtung
TWI567253B (zh) * 2015-10-07 2017-01-21 環球晶圓股份有限公司 長晶裝置
CN110106547B (zh) * 2019-06-25 2022-07-15 宁夏盾源聚芯半导体科技股份有限公司 提高直拉单晶拉速的装置
CN111876824A (zh) * 2020-07-23 2020-11-03 上海汉虹精密机械有限公司 单晶炉主腔室上部导热系统及其控制方法
JP7115592B1 (ja) 2021-05-28 2022-08-09 信越半導体株式会社 単結晶製造装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2939601B2 (ja) * 1992-01-29 1999-08-25 コマツ電子金属株式会社 単結晶製造装置
DE19503357A1 (de) * 1995-02-02 1996-08-08 Wacker Siltronic Halbleitermat Vorrichtung zur Herstellung eines Einkristalls
JPH08333189A (ja) * 1995-06-02 1996-12-17 Sumitomo Metal Ind Ltd 結晶引き上げ装置
JP4195738B2 (ja) * 1998-04-08 2008-12-10 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 単結晶製造装置
JP2001240492A (ja) * 2000-02-29 2001-09-04 Komatsu Electronic Metals Co Ltd リチャージ・追いチャージを円滑に行うｃｚ法単結晶引上げ装置
US6482263B1 (en) * 2000-10-06 2002-11-19 Memc Electronic Materials, Inc. Heat shield assembly for crystal pulling apparatus
US6579362B2 (en) * 2001-03-23 2003-06-17 Memc Electronic Materials, Inc. Heat shield assembly for crystal puller

Also Published As

Publication number Publication date
JP2002121096A (ja) 2002-04-23
US20030051661A1 (en) 2003-03-20
KR20020070312A (ko) 2002-09-05
KR100499435B1 (ko) 2005-07-05
DE10194625B3 (de) 2015-12-10
JP3587155B2 (ja) 2004-11-10
WO2002031234A1 (fr) 2002-04-18
US6764547B2 (en) 2004-07-20

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Legal Events

Date Code Title Description
R016 Response to examination communication
R018 Grant decision by examination section/examining division
R020 Patent grant now final
R119 Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee