DE10134187B4 - Cooling device for semiconductor modules - Google Patents
Cooling device for semiconductor modules Download PDFInfo
- Publication number
- DE10134187B4 DE10134187B4 DE2001134187 DE10134187A DE10134187B4 DE 10134187 B4 DE10134187 B4 DE 10134187B4 DE 2001134187 DE2001134187 DE 2001134187 DE 10134187 A DE10134187 A DE 10134187A DE 10134187 B4 DE10134187 B4 DE 10134187B4
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- Germany
- Prior art keywords
- cooling device
- cooling
- power semiconductor
- elements
- semiconductor module
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3677—Wire-like or pin-like cooling fins or heat sinks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
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- H—ELECTRICITY
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
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- H—ELECTRICITY
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
- H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/85399—Material
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- H—ELECTRICITY
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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- H—ELECTRICITY
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01068—Erbium [Er]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
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- H—ELECTRICITY
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
Abstract
Kühleinrichtung (4) für Leistungshalbleitermodule (1) bestehend aus einem Gehäuse, Anschlusselementen, einem keramischen Substrat (10) mit auf dessen erster Hauptfläche angeordneten metallkaschierten und strukturierten Flächen (11) sowie einer auf seiner zweiten Hauptfläche angeordneten vollflächigen Metallkaschierung (12) und auf der metallkaschierten Fläche (11) befindlichen, löttechnisch (13) aufgebachten, zum Teil mittels Bondverbindungen (15) mit metallkaschierten Flächen (11) verbundenen, Bauelementen (14), wobei die Kühleinrichtung aus zweidimensional, matrixartig in mindestens zwei Reihen und mindestens zwei Spalten angeordneten Einzelkühlelementen (3) besteht wobei jedes Einzelkühlelement thermisch mit der vollflächigen Metallkaschierung (12) der zweiten Hauptfläche des zu kühlenden Leistungshalbleitermoduls (1) verbunden ist.cooling device (4) for Power semiconductor modules (1) consisting of a housing, connecting elements, a ceramic substrate (10) arranged on the first major surface metal-clad and structured surfaces (11) and one on his second main surface arranged full-surface Metal lamination (12) and on the metal-clad surface (11) located, soldering (13) set up, partly by means of bonds (15) with metal-laminated surfaces (11) connected, components (14), wherein the cooling device of two-dimensional, matrix-like in at least two rows and at least two columns arranged individual cooling elements (3) wherein each individual cooling element is thermal with the full-surface Metallkaschierung (12) of the second major surface of the cooled Power semiconductor module (1) is connected.
Description
Die Erfindung beschreibt eine Kühleinrichtung zur Kühlung von Halbleitermodulen der Leistungsklasse. Auf Grund der geringen Flächenausdehnung bei gleichzeitig hoher Stromtragfähigkeit moderner Leistungshalbleiterbauelemente ist eine effiziente und über die gesamte Lebensdauer gleichbleibend effiziente Kühlung dieser Halbleiterbauelemente bzw. von daraus aufgebauten Leistungshalbleitermodulen unerlässlich. Eine Verringerung der Kühlleistung geht in den meisten Fällen mit einem Ausfall oder doch zumindest mit einer deutlich verminderten Leistungsfähigkeit der Bauelemente bzw. der Module einher. Aus diesem Grund muss der Kühleinrichtung sowie deren thermischen Anschluss an die zu kühlenden Bauelemente bzw. Module besondere Aufmerksamkeit gewidmet werden.The Invention describes a cooling device for cooling of semiconductor modules of the performance class. Due to the low surface area with simultaneously high current carrying capacity of modern power semiconductor components is an efficient and over the whole lifetime consistent efficient cooling of this Semiconductor devices or constructed of power semiconductor modules essential. A reduction in cooling capacity works in most cases with a failure or at least with a significantly reduced capacity associated with the components or the modules. For this reason, the must cooling device as well as their thermal connection to the components or modules to be cooled be given special attention.
Zu
kühlende
Leistungshalbleitermodule sind nach dem Stand der Technik aufgebaut
auf keramischen Substraten wie sie beispielsweise nach der
((Stand der Technik und seine Nachteile))((Prior art and its disadvantages))
Beispiele
für moderne
Leistungshalbleitermodule mit entsprechend hohen Anforderungen an die
dafür benötigten Kühleinrichtungen
finden sich beispielhaft in der
Eine
Kühleinrichtung
nach dem aktuellen Stand der Technik, wie er beispielsweise in der
Beispielsweise
in der
Allen dem bisher genannten Stand der Technik zuordenbaren Kühleinrichtungen ist gemeinsam, dass der thermische Kontakt zwischen der Kühleinrichtung und dem zu kühlenden Bauelement bzw. Modul über den flächig ausgedehnten Grundkörper der Kühleinrichtung hergestellt wird. Zur Verbindung werden sowohl stoffbündige als auch stoffschlüssige Verfahren angewandt.all The previously mentioned prior art allocatable cooling devices is common that the thermal contact between the cooling device and to be cooled Component or module over the area extended body of the cooling device will be produced. The connection will be both flush and also cohesive methods applied.
Zu den stoffschlüssigen Verfahren zählt als das bekannteste das Löten des Grundkörpers auf das zu kühlenden Bauelement bzw. Modul. Die stoffschlüssige Aufbautechnologie weist im wesentlichen zwei Nachteile auf:
- 1. Großflächige Lötverbindungen
wie sie speziell bei Halbleitermodulen notwendig sind, sind technologisch
schwer beherrschbar. Eine homogene, lunkerfreie Lötung großer Flächen ist
nur mittels aufwendiger Verfahren wie sie beispielhaft in der
DE 199 11 887 C1 - 2. Der thermische Ausdehnungskoeffizient von keramischen Substraten liegt bei Werten von kleiner 8 × 10–6/K. Dem gegenüber steht der thermische Ausdehnungskoeffizient von typischen metallischen Kühleinrichtungen bei 17 bis 26 × 10–6/K. Dies führt skalierend mit der Ausdehnung der stoffschlüssigen Verbindung zu zunehmenden Problemen während des Betriebs, da bei Leistungshalbleitermodulen je nach Anwendung Temperaturänderungen von bis zu 150K auftreten. Diese Temperaturänderungen in Verbindung mit den unterschiedlichen thermischen Ausdehnungskoeffizienten führen über die Lebensdauer eines Bauelements bzw. Moduls zu einer lokalen oder vollständigen Zerstörung der stoffschlüssigen Verbindung. Dies wiederum führt zu einer Reduzierung der übertragbaren Wärmelast. Die hieraus folgende Erhöhung der Temperatur der Halbleiterbauelemente führt zu einer reduzierten Leistungsfähigkeit oder zum vorzeitigen Ausfall.
- 1. Large-area solder joints as they are necessary especially for semiconductor modules are technologically difficult to control. Homogeneous, void-free soldering of large surfaces is only possible by means of complex processes as exemplified in US Pat
DE 199 11 887 C1 - 2. The thermal expansion coefficient of ceramic substrates is less than 8 × 10 -6 / K. On the other hand, the thermal expansion coefficient of typical metallic cooling devices is 17 to 26 × 10 -6 / K. This leads to increasing problems during operation as the expansion of the bonded connection increases, since with power semiconductor modules temperature changes of up to 150 K occur depending on the application. These temperature changes in conjunction with the different thermal expansion coefficients lead over the life of a component or module to a local or complete destruction of the cohesive connection. This in turn leads to a reduction of the transferable heat load. The consequent increase in the temperature of the semiconductor devices results in reduced performance or premature failure.
Zu
den stoffbündigen
Verfahren zählt
beispielhaft die Druckkontaktierung eines Leistungshalbleitermoduls
mit der Kühleinrichtung,
wie sie in der
Für Leistungshalbleitermodule
ist eine weitere Ausgestaltung von Kühleinrichtungen beispielsweise
aus der
Bekannt
sind weiterhin, beispielhaft aus der
Die vorliegende Erfindung hat die Aufgabe, eine Kühleinrichtung zur Verwendung verschiedener Kühlmedien vorzustellen, die eine effiziente Kühlung von Leistungshhalbleiterbauelementen sowie anderen Bauelementen als Bestandteilen von Leistungshalbleitermodulen gewährleistet, wobei stoffschlüssige wie auch stoffbündige Verbindungstechniken eingesetzt werden können, wobei auf großflächige stoffschlüssige Verbindungen verzichtet werden kannThe The present invention has the object of a cooling device for use different cooling media to present the efficient cooling of power semiconductor devices and other components as components of power semiconductor modules guaranteed being cohesive as well as flush joining techniques can be used being on large-area cohesive connections can be waived
((Lösung der Aufgabe))((Solution of the task))
Die Aufgabe wird gelöst durch die Maßnahmen des Anspruchs 1. Weitere vorteilhafte Ausgestaltungen sind in den Unteransprüchen genannt.The Task is solved through the measures of claim 1. Further advantageous embodiments are in the dependent claims called.
Der Grundgedanke der Erfindung ist, bei einer Kühleinrichtung auf einen gemeinsamen großflächigen Grundkörper, auf dem mehrere Kühlelemente angeordnet sind und der räumlich zwischen dem zu kühlenden Bauelement bzw. Modul und den einzelnen Kühlelementen angeordnet ist, zu verzichten.Of the The basic idea of the invention is, in the case of a cooling device, to a common one large body, on the plurality of cooling elements arranged are and the spatially between the one to be cooled Component or module and the individual cooling elements is arranged, to renounce.
Die Wärmeableitung von einem Leistungshalbleitermodul erfolgt über einzelne Kühlelemente, die ihrerseits aus einem Grundkörper und einer fingerartigen Fortsetzung bestehen, wobei der Grundkörper keine größere laterale Ausdehnung als die fingerartige Fortsetzung aufweisen muss. Diese einzelnen Kühlelemente sind matrixartig in Reihen und Spalten an der zu kühlenden Oberfläche angeordnet. Falls es durch die Verwendung eines beispielsweise flüssigen Kühlmediums oder die Aufbautechnologie gefordert ist, können alle oder nur Gruppen von einzelnen Kühlelementen mit jeweils einem weiteren Teilkörper, der sich auf der dem zu kühlenden Bauelement oder Modul abgewandten Seiten der Kühlelemente befindet, verbunden sein. Die nicht dem zu kühlenden Bauelement oder Modul zugewandten Oberflächen der einzelnen Kühlelementen können glatte oder zur besseren Wärmeableitung beliebig strukturierte Oberflächen aufweisen.The heat dissipation from a power semiconductor module via individual cooling elements, the in turn, from a basic body and a finger-like continuation, wherein the main body no larger lateral Expansion must have as the finger-like continuation. These individual cooling elements are matrix-like in rows and columns at the to be cooled surface arranged. If it is due to the use of an example liquid cooling medium or the assembly technology is required, all or only groups of individual cooling elements each with a further part body, which is on the one to be cooled Component or module opposite sides of the cooling elements is connected be. The not to be cooled Component or module facing surfaces of the individual cooling elements can be smooth or for better heat dissipation arbitrarily structured surfaces exhibit.
Spezielle
Ausgestaltungen der erfinderischen Lösung werden an Hand der
Die
einzelnen Kühlelemente
sind matrixartig, das heißt
in Reihen und Spalten mit jeweils gleichem Abstand der einzelnen
Kühlelemente
zueinander angeordnet. Jedes Kühlelement
Die
einzelnen Kühlelemente
Die
einzelnen Kühlelemente
- • als Kühlmedium
eine Flüssigkeit
verwendet wird und durch den Teilkörper
33 ein geschlossener Kühlmittelkreislauf erreicht werden kann; und/oder - • als
Verbindung zwischen dem DCB- Substrat
1 und dem Kühlelement4 eine Druckkontaktierung verwendet wird. Hierbei ist es vorteilhaft das Kühlelement4 in größeren Einheiten von Kühlelementen3 mit dem DCB- Substrat1 zu verbinden. In diesem Fall würde das Lot20 durch ein wärmeleitendes Medium ersetzt werden können.
- • A liquid is used as the cooling medium and through the part body
33 a closed coolant circuit can be achieved; and or - • as a connection between the DCB substrate
1 and the cooling element4 a pressure contact is used. In this case, it is advantageous the cooling element4 in larger units of cooling elements3 with the DCB substrate1 connect to. In this case, the lot would20 can be replaced by a thermally conductive medium.
Die
vorgestellte erfinderische Kühleinrichtung
Bei stoffschlüssigen Verbindungen
sind nur kleinflächige
Verbindungsflächen
vorhanden. Daher werden die Auswirkungen thermischer Ausdehnungseffekte vermindert
oder vollständig
verhindert.The presented inventive cooling device
In cohesive connections only small-area connecting surfaces are present. Therefore, the effects of thermal expansion effects are reduced or completely prevented.
Bei stoffbündigen sowie stoffschlüssigen Verbindungen wird die Wärme dezidiert an den Stellen abgeleitet, an denen sie auftritt.at material flush as well as cohesive connections gets the heat decidedly deduced at the places where it occurs.
Es können beliebige gasförmige oder flüssige Kühlmedien verwendet werden.It can any gaseous or liquid cooling media be used.
Claims (11)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE2001134187 DE10134187B4 (en) | 2001-07-13 | 2001-07-13 | Cooling device for semiconductor modules |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE2001134187 DE10134187B4 (en) | 2001-07-13 | 2001-07-13 | Cooling device for semiconductor modules |
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Publication Number | Publication Date |
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DE10134187A1 DE10134187A1 (en) | 2003-01-30 |
DE10134187B4 true DE10134187B4 (en) | 2006-09-14 |
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DE2001134187 Revoked DE10134187B4 (en) | 2001-07-13 | 2001-07-13 | Cooling device for semiconductor modules |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102007019885A1 (en) | 2007-04-27 | 2008-11-06 | Wieland-Werke Ag | heatsink |
DE102009029476A1 (en) * | 2009-09-15 | 2011-03-31 | Lisa Dräxlmaier GmbH | Electronic device for switching currents and manufacturing method for the same |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007294891A (en) * | 2006-03-30 | 2007-11-08 | Dowa Metaltech Kk | Heat sink |
FR2956558B1 (en) * | 2010-02-18 | 2016-07-01 | Airbus Operations Sas | ELECTRONIC MODULE WITH ENHANCED THERMAL DISSIPATION |
DE102010029869A1 (en) * | 2010-06-09 | 2011-12-15 | Zf Friedrichshafen Ag | Cooling device for power electronics, has pin-fin array extending from foot point of base body, and pins continuously tapered from proximate end to distal end of foot point in cone form or truncated cone form |
WO2014173419A1 (en) * | 2013-04-23 | 2014-10-30 | Alexiou & Tryde Holding Aps | Heat sink having a cooling structure with decreasing structure density |
DE102016208919A1 (en) * | 2016-05-24 | 2017-11-30 | Robert Bosch Gmbh | Heat sink for cooling electronic components |
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US3744120A (en) * | 1972-04-20 | 1973-07-10 | Gen Electric | Direct bonding of metals with a metal-gas eutectic |
US4541004A (en) * | 1982-11-24 | 1985-09-10 | Burroughs Corporation | Aerodynamically enhanced heat sink |
EP0219657A2 (en) * | 1985-10-16 | 1987-04-29 | International Business Machines Corporation | Composite heat transfer device with pins having wings alternately oriented for up-down flow |
JPH0637218A (en) * | 1992-07-20 | 1994-02-10 | Fujitsu Ltd | Semiconductor device |
DE4418611A1 (en) * | 1993-07-30 | 1995-02-02 | Fujitsu Ltd | Semiconductor element cooling device |
EP0597254B1 (en) * | 1992-11-07 | 1997-05-07 | EXPORT-CONTOR Aussenhandelsgesellschaft mbH | Device with power semiconductor components |
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DE19911887C1 (en) * | 1999-03-17 | 2000-12-21 | Asscon Systech Elektronik Gmbh | Process for reflow soldering in a vapor phase vacuum soldering system |
DE10127947C1 (en) * | 2001-08-22 | 2002-10-17 | Semikron Elektronik Gmbh | Circuit device for power semiconductor module has intermediate circuit board with DC and AC terminals coupled to conductor paths of substrate incorporated in base body |
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2001
- 2001-07-13 DE DE2001134187 patent/DE10134187B4/en not_active Revoked
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DE19630173A1 (en) * | 1996-07-26 | 1998-01-29 | Semikron Elektronik Gmbh | Semiconductor power module for current rectifier |
DE19806978A1 (en) * | 1998-02-19 | 1999-08-26 | Behr Gmbh & Co | Convection cooled heat sink for electronic components |
DE19853750A1 (en) * | 1998-08-04 | 2000-02-17 | Schulz Harder Juergen | Heat sink device for electrical or electronic component, circuit or module |
DE19852933A1 (en) * | 1998-11-17 | 2000-05-18 | Joachim Glueck | Heat sink device for semiconductor elements or electric motor has extruded lightweight metal base profile provided with projecting spaced cooling ribs |
DE19911887C1 (en) * | 1999-03-17 | 2000-12-21 | Asscon Systech Elektronik Gmbh | Process for reflow soldering in a vapor phase vacuum soldering system |
DE10127947C1 (en) * | 2001-08-22 | 2002-10-17 | Semikron Elektronik Gmbh | Circuit device for power semiconductor module has intermediate circuit board with DC and AC terminals coupled to conductor paths of substrate incorporated in base body |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102007019885A1 (en) | 2007-04-27 | 2008-11-06 | Wieland-Werke Ag | heatsink |
WO2008135164A1 (en) | 2007-04-27 | 2008-11-13 | Wieland-Werke Ag | Cooling body |
DE102009029476A1 (en) * | 2009-09-15 | 2011-03-31 | Lisa Dräxlmaier GmbH | Electronic device for switching currents and manufacturing method for the same |
DE102009029476B4 (en) * | 2009-09-15 | 2012-11-08 | Lisa Dräxlmaier GmbH | Electronic device for switching currents and manufacturing method for the same |
US8837150B2 (en) | 2009-09-15 | 2014-09-16 | Lisa Dräxlmaier GmbH | Electronic device for switching currents and method for producing the same |
Also Published As
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DE10134187A1 (en) | 2003-01-30 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
OP8 | Request for examination as to paragraph 44 patent law | ||
8127 | New person/name/address of the applicant |
Owner name: SEMIKRON ELEKTRONIK GMBH & CO. KG, 90431 NUERNBERG, |
|
8363 | Opposition against the patent | ||
8331 | Complete revocation |