DE1005644B - Temperature compensation transistor - Google Patents

Temperature compensation transistor

Info

Publication number
DE1005644B
DE1005644B DEP15031A DEP0015031A DE1005644B DE 1005644 B DE1005644 B DE 1005644B DE P15031 A DEP15031 A DE P15031A DE P0015031 A DEP0015031 A DE P0015031A DE 1005644 B DE1005644 B DE 1005644B
Authority
DE
Germany
Prior art keywords
thermistor
transistor
temperature compensation
temperature
compensation transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DEP15031A
Other languages
German (de)
Inventor
Dr-Ing Max Strutt
Dipl-Ing Gustav Guanella
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Patelhold Patenverwertungs and Elektro-Holding AG
Original Assignee
Patelhold Patenverwertungs and Elektro-Holding AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Patelhold Patenverwertungs and Elektro-Holding AG filed Critical Patelhold Patenverwertungs and Elektro-Holding AG
Publication of DE1005644B publication Critical patent/DE1005644B/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
    • H03F1/302—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in bipolar transistor amplifiers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/345—Arrangements for heating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Description

Transistor mit Temperaturkompensation Es ist bekannt, daß die elektrischen Eigenschaften eines Transistors stark von der Temperatur abhängig sind, welcher der Transistor ausgesetzt ist. Die Erfindung bezweckt, mit geringem Aufwand, insbesondere ohne Verwendung von Thermostaten, die auf einen Transistor einwirkenden Temperaturschwankungen zu verringern. Gemäß der Erfindung steht deshalb der Transistors mit einem Heißleiter in Wärmekontakt, und der Heißleiter liegt in Reihe mit einem verhältnismäßig großen, temperaturunabhängigen Vorwiderstand an einer konstanten Spannungsquelle zwecks Vergrößerung der im Heißleiter erzeugten Heizleistung mit abnehmender Umgebungstemperatur. Ein Heißleiter wird deshalb verwendet, da dessen elektrischer Widerstand mit steigender Temperatur abnimmt. Im Hinblick darauf, mit abnehmender Umgebungstemperatur die im Heißleiter V, der im Wärmekontakt mit dem Transistor T steht, umgesetzte Leistung zu vergrößern, wird dieser gemäß Fig. 1 über den verhältnismäßig großen temperaturunabhängigen Widerstand R aus der Stromquelle B von konstanter Spannung gespeist.Transistor with temperature compensation It is known that the electrical Properties of a transistor are highly dependent on the temperature, which the transistor is exposed. The invention aims, with little effort, in particular without the use of thermostats, the temperature fluctuations acting on a transistor to reduce. According to the invention, the transistor is therefore provided with a thermistor in thermal contact, and the thermistor is in series with a relatively large, temperature-independent series resistor at a constant voltage source for the purpose of The heat output generated in the thermistor increases as the ambient temperature decreases. A thermistor is used because its electrical resistance increases with it Temperature decreases. In view of this, as the ambient temperature decreases, the in the thermistor V, which is in thermal contact with the transistor T, converted power to increase, this is shown in FIG. 1 on the relatively large temperature-independent Resistor R fed from power source B by constant voltage.

Wenn zufolge der Bauart des Heißleiters dessen Verwendung als Heizwiderstand unzweckmäßig erscheint, kann gemäß Fig. 2 ein besonderer Heizwiderstand H, der im Wärmekontakt mit dem Transistor 7' liegt, vorgesehen werden, zu welchem der Heißleiter V parallel geschaltet ist.If, according to the design of the thermistor, its use as a heating resistor appears inexpedient, a special heating resistor H, which is shown in FIG Thermal contact with the transistor 7 'is provided, to which the thermistor V is connected in parallel.

Zufolge der Abwesenheit von Schaltkontakten sind Lebensdauer und Betriebssicherheit der vorliegenden Einrichtung sehr hoch.As a result of the absence of switching contacts, service life and operational reliability are increased the present facility is very high.

Claims (2)

PATENTANSPRÜCHE: 1. Transistor mit Temperaturkompensation, dadurch gekennzeichnet, daß der Transistor mit einem Heißleiter in Wärmekontakt steht und der Heißleiter in Reihe mit einem verhältnismäßig großen, temperaturunabhängigen Vorwiderstand an einer konstanten Spannungsquelle liegt zwecks Vergrößerung der im Heißleiter erzeugten Heizleistung mit abnehmender Umgebungstemperatur. PATENT CLAIMS: 1. Transistor with temperature compensation, thereby characterized in that the transistor is in thermal contact with a thermistor and the thermistor in series with a relatively large, temperature-independent Series resistor is connected to a constant voltage source for the purpose of increasing the Heating output generated in the thermistor with decreasing ambient temperature. 2. Transistor nach Anspruch 1, dadurch gekennzeichnet, daß an Stelle des Heißleiters ein Heizwiderstand geschaltet ist, dem ein Heizleiter parallel liegt.2. transistor according to claim 1, characterized in that instead of the thermistor a heating resistor is connected, which is parallel to a heating conductor.
DEP15031A 1955-10-14 1955-10-22 Temperature compensation transistor Pending DE1005644B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH1005644X 1955-10-14

Publications (1)

Publication Number Publication Date
DE1005644B true DE1005644B (en) 1957-04-04

Family

ID=4552233

Family Applications (1)

Application Number Title Priority Date Filing Date
DEP15031A Pending DE1005644B (en) 1955-10-14 1955-10-22 Temperature compensation transistor

Country Status (1)

Country Link
DE (1) DE1005644B (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1073631B (en) * 1957-10-16 1960-01-21 LICENTIA Patent-Verwaltuntrs-G.m.b.H., Frankfurt/M Device for monitoring the temperature of an electrical semiconductor arrangement
DE1074159B (en) * 1957-09-13 1960-01-28 LICENTIA Patent-Verwaltungs-G.m.b.H., Frankfurt/M Device for monitoring the temperature of an electrical semiconductor arrangement
DE1193611B (en) * 1960-08-20 1965-05-26 Siemens Ag Installation in a converter system with semiconductor rectifier elements for protection against strong temperature-related alternating strength loads

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1074159B (en) * 1957-09-13 1960-01-28 LICENTIA Patent-Verwaltungs-G.m.b.H., Frankfurt/M Device for monitoring the temperature of an electrical semiconductor arrangement
DE1073631B (en) * 1957-10-16 1960-01-21 LICENTIA Patent-Verwaltuntrs-G.m.b.H., Frankfurt/M Device for monitoring the temperature of an electrical semiconductor arrangement
DE1193611B (en) * 1960-08-20 1965-05-26 Siemens Ag Installation in a converter system with semiconductor rectifier elements for protection against strong temperature-related alternating strength loads

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