DD137640A1 - Mehrschichthalbleiterbauelement - Google Patents
MehrschichthalbleiterbauelementInfo
- Publication number
- DD137640A1 DD137640A1 DD20700678A DD20700678A DD137640A1 DD 137640 A1 DD137640 A1 DD 137640A1 DD 20700678 A DD20700678 A DD 20700678A DD 20700678 A DD20700678 A DD 20700678A DD 137640 A1 DD137640 A1 DD 137640A1
- Authority
- DD
- German Democratic Republic
- Prior art keywords
- semiconductor element
- layer semiconductor
- layer
- semiconductor
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
- H01L29/0839—Cathode regions of thyristors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/7428—Thyristor-type devices, e.g. having four-zone regenerative action having an amplifying gate structure, e.g. cascade (Darlington) configuration
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CS512777A CS192827B1 (en) | 1977-08-02 | 1977-08-02 | Multilayer semiconductor element |
Publications (1)
Publication Number | Publication Date |
---|---|
DD137640A1 true DD137640A1 (de) | 1979-09-12 |
Family
ID=5395547
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DD20700678A DD137640A1 (de) | 1977-08-02 | 1978-07-28 | Mehrschichthalbleiterbauelement |
Country Status (3)
Country | Link |
---|---|
CS (1) | CS192827B1 (de) |
DD (1) | DD137640A1 (de) |
DE (1) | DE2833917A1 (de) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2683946B1 (fr) * | 1991-11-15 | 1997-05-09 | Sgs Thomson Microelectronics | Composant semiconducteur de protection contre des surtensions. |
DE102017130330B3 (de) * | 2017-12-18 | 2019-02-14 | Semikron Elektronik Gmbh & Co. Kg | Thyristor mit einem Halbleiterkörper |
-
1977
- 1977-08-02 CS CS512777A patent/CS192827B1/cs unknown
-
1978
- 1978-07-28 DD DD20700678A patent/DD137640A1/de not_active IP Right Cessation
- 1978-08-02 DE DE19782833917 patent/DE2833917A1/de not_active Ceased
Also Published As
Publication number | Publication date |
---|---|
CS192827B1 (en) | 1979-09-17 |
DE2833917A1 (de) | 1979-02-15 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ENJ | Ceased due to non-payment of renewal fee |