DD132693A1 - Leseverstaerker fuer integrierte speichereinrichtungen - Google Patents

Leseverstaerker fuer integrierte speichereinrichtungen

Info

Publication number
DD132693A1
DD132693A1 DD7700200424A DD20042477A DD132693A1 DD 132693 A1 DD132693 A1 DD 132693A1 DD 7700200424 A DD7700200424 A DD 7700200424A DD 20042477 A DD20042477 A DD 20042477A DD 132693 A1 DD132693 A1 DD 132693A1
Authority
DD
German Democratic Republic
Prior art keywords
reader
storage devices
integrated storage
integrated
devices
Prior art date
Application number
DD7700200424A
Other languages
English (en)
Inventor
Jury V Minkov
Vladimir I Solomonenko
Original Assignee
Minkov Jurij V
Vladimir I Solomonenko
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Minkov Jurij V, Vladimir I Solomonenko filed Critical Minkov Jurij V
Publication of DD132693A1 publication Critical patent/DD132693A1/de

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356—Bistable circuits
DD7700200424A 1976-08-05 1977-08-03 Leseverstaerker fuer integrierte speichereinrichtungen DD132693A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SU762393457A SU928405A1 (ru) 1976-08-05 1976-08-05 Усилитель считывани дл интегрального запоминающего устройства

Publications (1)

Publication Number Publication Date
DD132693A1 true DD132693A1 (de) 1978-10-18

Family

ID=20673110

Family Applications (1)

Application Number Title Priority Date Filing Date
DD7700200424A DD132693A1 (de) 1976-08-05 1977-08-03 Leseverstaerker fuer integrierte speichereinrichtungen

Country Status (8)

Country Link
US (1) US4166225A (de)
JP (1) JPS5330837A (de)
DD (1) DD132693A1 (de)
DE (1) DE2734987C3 (de)
FR (1) FR2392542A1 (de)
GB (1) GB1550316A (de)
NL (1) NL175236C (de)
SU (1) SU928405A1 (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53120238A (en) * 1977-03-29 1978-10-20 Mitsubishi Electric Corp Semiconductor amplifier
CH619329A5 (de) * 1977-07-15 1980-09-15 Sodeco Compteurs De Geneve
JPS5457921A (en) * 1977-10-18 1979-05-10 Fujitsu Ltd Sense amplifier circuit
JPS59169B2 (ja) * 1977-10-25 1984-01-05 三菱電機株式会社 フリップフロップ回路
FR2412982A1 (fr) * 1977-12-23 1979-07-20 Signetics Corp Circuit amplificateur pour lire et rafraichir de l'information
DE2824727A1 (de) * 1978-06-06 1979-12-13 Ibm Deutschland Schaltung zum nachladen der ausgangsknoten von feldeffekt-transistorschaltungen
US4286178A (en) * 1978-06-12 1981-08-25 Texas Instruments Incorporated Sense amplifier with dual parallel driver transistors in MOS random access memory
WO1980001965A1 (en) * 1979-03-13 1980-09-18 Ncr Co Static volatile/non-volatile ram system
JPS6045499B2 (ja) * 1980-04-15 1985-10-09 富士通株式会社 半導体記憶装置
US4521703A (en) * 1982-08-30 1985-06-04 Rca Corporation High speed sense amplifier
US4589020A (en) * 1982-11-22 1986-05-13 Olympus Optical Co., Ltd. TV video data input apparatus
DE3680064D1 (de) * 1985-10-09 1991-08-08 Nec Corp Differenzverstaerker-schaltungsanordnung.

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3795898A (en) * 1972-11-03 1974-03-05 Advanced Memory Syst Random access read/write semiconductor memory
US3838295A (en) * 1973-02-05 1974-09-24 Lockheed Electronics Co Ratioless mos sense amplifier
US3959781A (en) * 1974-11-04 1976-05-25 Intel Corporation Semiconductor random access memory
JPS51128236A (en) * 1975-04-30 1976-11-09 Nec Corp A memory circuit
US4031522A (en) * 1975-07-10 1977-06-21 Burroughs Corporation Ultra high sensitivity sense amplifier for memories employing single transistor cells
US4061999A (en) * 1975-12-29 1977-12-06 Mostek Corporation Dynamic random access memory system
US4039861A (en) * 1976-02-09 1977-08-02 International Business Machines Corporation Cross-coupled charge transfer sense amplifier circuits
US4069475A (en) * 1976-04-15 1978-01-17 National Semiconductor Corporation MOS Dynamic random access memory having an improved sense and restore circuit
US4081701A (en) * 1976-06-01 1978-03-28 Texas Instruments Incorporated High speed sense amplifier for MOS random access memory

Also Published As

Publication number Publication date
FR2392542A1 (fr) 1978-12-22
NL175236C (nl) 1984-10-01
NL175236B (nl) 1984-05-01
NL7708627A (nl) 1978-02-07
FR2392542B1 (de) 1980-02-22
SU928405A1 (ru) 1982-05-15
GB1550316A (en) 1979-08-08
DE2734987B2 (de) 1979-01-25
DE2734987C3 (de) 1981-05-07
JPS5330837A (en) 1978-03-23
DE2734987A1 (de) 1978-02-09
US4166225A (en) 1979-08-28

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